JPS62124761A - ポンデイング用アルミニウム線 - Google Patents

ポンデイング用アルミニウム線

Info

Publication number
JPS62124761A
JPS62124761A JP60263995A JP26399585A JPS62124761A JP S62124761 A JPS62124761 A JP S62124761A JP 60263995 A JP60263995 A JP 60263995A JP 26399585 A JP26399585 A JP 26399585A JP S62124761 A JPS62124761 A JP S62124761A
Authority
JP
Japan
Prior art keywords
bonding
wire
aluminum
aluminum wire
substance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP60263995A
Other languages
English (en)
Inventor
Takuya Komoda
卓哉 菰田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Electric Works Co Ltd
Original Assignee
Matsushita Electric Works Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Works Ltd filed Critical Matsushita Electric Works Ltd
Priority to JP60263995A priority Critical patent/JPS62124761A/ja
Publication of JPS62124761A publication Critical patent/JPS62124761A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/43—Manufacturing methods
    • H01L2224/438—Post-treatment of the connector
    • H01L2224/4382—Applying permanent coating, e.g. in-situ coating
    • H01L2224/43825—Plating, e.g. electroplating, electroless plating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124—Aluminium (Al) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554—Coating
    • H01L2224/45565—Single coating layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554—Coating
    • H01L2224/45599—Material
    • H01L2224/456—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45601—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • H01L2224/45616—Lead (Pb) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554—Coating
    • H01L2224/45599—Material
    • H01L2224/456—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45644—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/4901—Structure
    • H01L2224/4903—Connectors having different sizes, e.g. different diameters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01078—Platinum [Pt]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Other Surface Treatments For Metallic Materials (AREA)
  • Wire Bonding (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。

Description

【発明の詳細な説明】 〔技術分野〕 本発明は、ＩＣ，ＬＳＩ、　　トランジスタ等のボンデ
ィング線に関するものである。
〔背景技術〕
従来、パワーデバイス、例えばトランジスタ、ＭＯＳ　
　ＦＥＴ等のボンディングには、アルミニウム線が用い
られてきた。これは、大電流を流すため、太線が必要と
なり、金線ではコストアップになるからということと、
金線ボンディングは通常チップを３００℃以上に加熱す
るが、パワーデバイスは、ハンダでグイボンドされてい
るため、高温ハンダを用いても、ボンディング中にチッ
プがずれたりする危険性があるため、常温でできるアル
ミニウム線が好まれている。
しかし、封脂したアルミニウム線ボンディングしたデバ
イスが故障したとき、Ｘ線等により、ボンディング状態
をみようとしても、アルミニウムは放射線に対してはほ
とんど透過させてしまうため、封止しである樹脂をとか
さないと、中が見られなかった。また、樹層をとかして
も、この際、ボンディングしていたアルミニウム線がは
ずれたり、とけてしまったりすることがあり、これが、
ボンディング時におこったものなのか、その後の開封の
時におこったものなのかを特定できない問題を有してい
た。
〔発明の目的〕
本発明は、かかる欠点に鑑みてなされたものであり、そ
の目的とするところは、不良解析の際Ｘ線を用いて、そ
のデバイスのボンディング状態がみられるボンディング
用アルミニウム線を提供することである。
〔発明の開示〕
この発明の要旨とするところは、アルミニウム細線（１
）の表面に放射線不透物質（２）を被覆したことを特徴
とするボンディング用アルミニウム線である。
以下図示せる実施例に基づいて説明する。
第１図に示すのはアルミニウム細線（１）の表面に放射
線不透物質（２）として金、鉛等をメッキ等により塗布
により被覆せしめたボンディング用アルミニウム線であ
る。
第２図に示すのはアルミニウム細線（１）の表面に金、
鉛等の細粉を、ポリイミド樹脂等の樹脂系接着剤に分散
させて放射線不透物質（２）として塗布により被覆せし
めた例である。
第３図に示すのはアルミニウム細線（１）の表面に金、
鉛等のより細い細線を螺装被覆した例である。
〔発明の効果〕
本発明のボンディング用アルミニウム線を使用すれば、
放射線不透物質を被覆しているので、ポンディング後封
止されたデバイスの不良解析にＸ線を用いる場合ボンデ
ィングされたアルミニウム線がみえ解析力が大幅にアッ
プする。さらに工程上、封止後すぐにＸ線検査工程を入
れることにより、工程上で良、不良の判定ができ、工程
品質保証の飛躍的な向上が期待できる。そしてアルミニ
ウム細線が基材となっているためパワーデバイスに対す
る使用性能は好ましいものである。
【図面の簡単な説明】
第１図乃至第３図は各に本発明の一実施例を示・す。 （１）・・・アルミニウム線、（２）・・・放射線不透
物質。

Claims (7)

    【特許請求の範囲】
  1. （１）アルミニウム細線の表面に、放射線不透物質を被
    覆したことを特徴とするボンディング用アルミニウム線
    。
  2. （２）放射線不透物質は金であることを特徴とする第１
    項記載のボンディング用アルミニウム線。
  3. （３）放射線不透物質は鉛であることを特徴とする第１
    項記載のボンディング用アルミニウム線。
  4. （４）金を細粉にして塗布することを特徴とする第２項
    記載のボンディング用アルミニウム線。
  5. （５）鉛を細粉にして塗布することを特徴とする第３項
    記載のボンディング用アルミニウム線。
  6. （６）アルミニウム線に放射線不透物質でできた細線と
    をねじりあわせてなる第１項記載のボンディング用アル
    ミニウム線。
  7. （７）放射線不透物質でできた細線とは、金線若しくは
    鉛線又は銅線であることを特徴とするボンディング用ア
    ルミニウム線。
JP60263995A 1985-11-25 1985-11-25 ポンデイング用アルミニウム線 Pending JPS62124761A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60263995A JPS62124761A (ja) 1985-11-25 1985-11-25 ポンデイング用アルミニウム線

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60263995A JPS62124761A (ja) 1985-11-25 1985-11-25 ポンデイング用アルミニウム線

Publications (1)

Publication Number Publication Date
JPS62124761A true JPS62124761A (ja) 1987-06-06

Family

ID=17397080

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60263995A Pending JPS62124761A (ja) 1985-11-25 1985-11-25 ポンデイング用アルミニウム線

Country Status (1)

Country Link
JP (1) JPS62124761A (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007138535A1 (en) * 2006-05-25 2007-12-06 Nxp B.V. Method and system for composite bond wires
CN113584355A (zh) * 2021-08-03 2021-11-02 上杭县紫金佳博电子新材料科技有限公司 一种键合用铝基合金母线及其制备方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007138535A1 (en) * 2006-05-25 2007-12-06 Nxp B.V. Method and system for composite bond wires
US8134073B2 (en) 2006-05-25 2012-03-13 Taiwan Semiconductor Manufacturing Company, Ltd. Method and system for composite bond wires
CN113584355A (zh) * 2021-08-03 2021-11-02 上杭县紫金佳博电子新材料科技有限公司 一种键合用铝基合金母线及其制备方法

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