TW511163B - Manufacturing method of semiconductor device - Google Patents

Manufacturing method of semiconductor device Download PDF

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Publication number
TW511163B
TW511163B TW090119543A TW90119543A TW511163B TW 511163 B TW511163 B TW 511163B TW 090119543 A TW090119543 A TW 090119543A TW 90119543 A TW90119543 A TW 90119543A TW 511163 B TW511163 B TW 511163B
Authority
TW
Taiwan
Prior art keywords
semiconductor device
manufacturing
insulating film
gas
etching
Prior art date
Application number
TW090119543A
Other languages
English (en)
Chinese (zh)
Inventor
Nobuyuki Negishi
Masaru Izawa
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Application granted granted Critical
Publication of TW511163B publication Critical patent/TW511163B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
    • H01L21/02063—Cleaning during device manufacture during, before or after processing of insulating layers the processing being the formation of vias or contact holes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76897—Formation of self-aligned vias or contact plugs, i.e. involving a lithographically uncritical step
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Drying Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
TW090119543A 2001-07-11 2001-08-09 Manufacturing method of semiconductor device TW511163B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001210149A JP2003023000A (ja) 2001-07-11 2001-07-11 半導体装置の製造方法

Publications (1)

Publication Number Publication Date
TW511163B true TW511163B (en) 2002-11-21

Family

ID=19045667

Family Applications (1)

Application Number Title Priority Date Filing Date
TW090119543A TW511163B (en) 2001-07-11 2001-08-09 Manufacturing method of semiconductor device

Country Status (4)

Country Link
US (1) US6645870B2 (enExample)
JP (1) JP2003023000A (enExample)
KR (1) KR100762524B1 (enExample)
TW (1) TW511163B (enExample)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6483736B2 (en) 1998-11-16 2002-11-19 Matrix Semiconductor, Inc. Vertically stacked field programmable nonvolatile memory and method of fabrication
US8575719B2 (en) 2000-04-28 2013-11-05 Sandisk 3D Llc Silicon nitride antifuse for use in diode-antifuse memory arrays
US6951823B2 (en) * 2001-05-14 2005-10-04 Axcelis Technologies, Inc. Plasma ashing process
US20040108573A1 (en) * 2002-03-13 2004-06-10 Matrix Semiconductor, Inc. Use in semiconductor devices of dielectric antifuses grown on silicide
DE10226603A1 (de) * 2002-06-14 2004-01-08 Infineon Technologies Ag Verfahren zum Strukturieren einer Siliziumschicht sowie dessen Verwendung zur Herstellung einer integrierten Halbleiterschaltung
JP2006351887A (ja) * 2005-06-17 2006-12-28 Hitachi High-Technologies Corp プラズマ処理装置
US7700492B2 (en) * 2005-06-22 2010-04-20 Tokyo Electron Limited Plasma etching method and apparatus, control program and computer-readable storage medium storing the control program
JP5179219B2 (ja) * 2008-02-20 2013-04-10 東京エレクトロン株式会社 付着物除去方法及び基板処理方法
KR20100046909A (ko) * 2008-10-28 2010-05-07 주성엔지니어링(주) 정전 흡착 장치와 그의 제조방법
KR101496149B1 (ko) * 2008-12-08 2015-02-26 삼성전자주식회사 결정질 실리콘 제조 방법
JP4968861B2 (ja) 2009-03-19 2012-07-04 東京エレクトロン株式会社 基板のエッチング方法及びシステム
JP2010272758A (ja) * 2009-05-22 2010-12-02 Hitachi High-Technologies Corp 被エッチング材のプラズマエッチング方法
JP2012114156A (ja) * 2010-11-22 2012-06-14 Ulvac Japan Ltd 圧電素子の製造方法
JP2013125796A (ja) * 2011-12-13 2013-06-24 Hitachi High-Technologies Corp プラズマ処理方法および装置
WO2014092856A1 (en) * 2012-12-14 2014-06-19 The Penn State Research Foundation Ultra-high speed anisotropic reactive ion etching
US10002744B2 (en) * 2013-12-17 2018-06-19 Tokyo Electron Limited System and method for controlling plasma density
US10395896B2 (en) 2017-03-03 2019-08-27 Applied Materials, Inc. Method and apparatus for ion energy distribution manipulation for plasma processing chambers that allows ion energy boosting through amplitude modulation
JP2019050305A (ja) * 2017-09-11 2019-03-28 東芝メモリ株式会社 プラズマエッチング方法、及び、半導体装置の製造方法
US11195923B2 (en) * 2018-12-21 2021-12-07 Applied Materials, Inc. Method of fabricating a semiconductor device having reduced contact resistance
US10593518B1 (en) * 2019-02-08 2020-03-17 Applied Materials, Inc. Methods and apparatus for etching semiconductor structures

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5292393A (en) 1986-12-19 1994-03-08 Applied Materials, Inc. Multichamber integrated process system
JPH04286115A (ja) 1991-03-15 1992-10-12 Fujitsu Ltd 半導体装置の製造方法
US6036878A (en) * 1996-02-02 2000-03-14 Applied Materials, Inc. Low density high frequency process for a parallel-plate electrode plasma reactor having an inductive antenna
JPH11145282A (ja) * 1997-11-06 1999-05-28 Nec Corp エッチング方法
JPH11251294A (ja) * 1998-02-27 1999-09-17 Sony Corp 半導体装置の製造方法

Also Published As

Publication number Publication date
KR20030006872A (ko) 2003-01-23
JP2003023000A (ja) 2003-01-24
US20030013313A1 (en) 2003-01-16
US6645870B2 (en) 2003-11-11
KR100762524B1 (ko) 2007-10-01

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