TW508757B - Semiconductor integrated circuit device and process for manufacturing the same - Google Patents

Semiconductor integrated circuit device and process for manufacturing the same Download PDF

Info

Publication number
TW508757B
TW508757B TW090100268A TW90100268A TW508757B TW 508757 B TW508757 B TW 508757B TW 090100268 A TW090100268 A TW 090100268A TW 90100268 A TW90100268 A TW 90100268A TW 508757 B TW508757 B TW 508757B
Authority
TW
Taiwan
Prior art keywords
insulating film
film
aforementioned
integrated circuit
semiconductor integrated
Prior art date
Application number
TW090100268A
Other languages
English (en)
Chinese (zh)
Inventor
Satoru Yamada
Kiyonori Oyu
Takafumi Tokunaga
Hiroyuki Enomoto
Toshihiro Sekiguchi
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=18541062&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=TW508757(B) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Application granted granted Critical
Publication of TW508757B publication Critical patent/TW508757B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/48—Data lines or contacts therefor
    • H10B12/485—Bit line contacts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
    • H10B12/0335—Making a connection between the transistor and the capacitor, e.g. plug
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
    • H10B12/315—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor with the capacitor higher than a bit line
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/48—Data lines or contacts therefor
    • H10B12/488—Word lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes
    • H10D1/711—Electrodes having non-planar surfaces, e.g. formed by texturisation
    • H10D1/716—Electrodes having non-planar surfaces, e.g. formed by texturisation having vertical extensions
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/906—Dram with capacitor electrodes used for accessing, e.g. bit line is capacitor plate

Landscapes

  • Semiconductor Memories (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
TW090100268A 2000-01-21 2001-01-05 Semiconductor integrated circuit device and process for manufacturing the same TW508757B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000013476A JP3645463B2 (ja) 2000-01-21 2000-01-21 半導体集積回路装置

Publications (1)

Publication Number Publication Date
TW508757B true TW508757B (en) 2002-11-01

Family

ID=18541062

Family Applications (1)

Application Number Title Priority Date Filing Date
TW090100268A TW508757B (en) 2000-01-21 2001-01-05 Semiconductor integrated circuit device and process for manufacturing the same

Country Status (4)

Country Link
US (2) US6555861B2 (enExample)
JP (1) JP3645463B2 (enExample)
KR (1) KR100737200B1 (enExample)
TW (1) TW508757B (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002217383A (ja) * 2001-01-12 2002-08-02 Hitachi Ltd 半導体集積回路装置の製造方法および半導体集積回路装置
JP4528504B2 (ja) * 2003-08-22 2010-08-18 ルネサスエレクトロニクス株式会社 半導体装置とその製造方法
KR100809597B1 (ko) * 2006-04-06 2008-03-04 삼성전자주식회사 미세 패턴 형성 방법 및 이를 이용한 반도체 메모리 장치의형성 방법
JP2008021809A (ja) * 2006-07-12 2008-01-31 Elpida Memory Inc 半導体装置およびその製造方法
KR100891329B1 (ko) * 2007-01-26 2009-03-31 삼성전자주식회사 반도체 소자 및 그 제조 방법
JP2010287853A (ja) * 2009-06-15 2010-12-24 Elpida Memory Inc 半導体装置及びその製造方法
US8487369B2 (en) * 2009-10-30 2013-07-16 Hynix Semiconductor Inc. Semiconductor device with buried gates and buried bit lines and method for fabricating the same
JP2011216526A (ja) * 2010-03-31 2011-10-27 Renesas Electronics Corp 半導体装置の製造方法、及び半導体装置
JP2012134395A (ja) * 2010-12-22 2012-07-12 Elpida Memory Inc 半導体装置および半導体装置の製造方法
US20160322473A1 (en) * 2015-04-30 2016-11-03 Taiwan Semiconductor Manufacturing Company, Ltd. Buffer Layer on Gate and Methods of Forming the Same
CN116133436A (zh) * 2021-11-12 2023-05-16 联华电子股份有限公司 半导体元件及其制作方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07106437A (ja) 1993-10-01 1995-04-21 Hitachi Ltd 半導体記憶装置
JP3203118B2 (ja) 1993-12-27 2001-08-27 三洋電機株式会社 非水電解液二次電池
JPH08204144A (ja) 1995-01-24 1996-08-09 Hitachi Ltd 半導体集積回路装置およびその製造方法
JP2953404B2 (ja) * 1995-12-08 1999-09-27 ソニー株式会社 半導体装置及びその製造方法
JPH1027906A (ja) * 1996-07-09 1998-01-27 Nippon Steel Corp 半導体装置の製造方法
JPH1032245A (ja) * 1996-07-17 1998-02-03 Toshiba Corp 半導体装置の製造方法
JP3869089B2 (ja) * 1996-11-14 2007-01-17 株式会社日立製作所 半導体集積回路装置の製造方法
JPH10335652A (ja) * 1997-05-30 1998-12-18 Hitachi Ltd 半導体集積回路装置の製造方法
JP3701469B2 (ja) * 1998-06-12 2005-09-28 株式会社ルネサステクノロジ 半導体集積回路装置の製造方法
JP2000013476A (ja) 1998-06-24 2000-01-14 Matsushita Electric Ind Co Ltd 電話装置

Also Published As

Publication number Publication date
US20030183941A1 (en) 2003-10-02
JP3645463B2 (ja) 2005-05-11
JP2001203337A (ja) 2001-07-27
US6791137B2 (en) 2004-09-14
KR100737200B1 (ko) 2007-07-10
US20020043680A1 (en) 2002-04-18
KR20010076421A (ko) 2001-08-11
US6555861B2 (en) 2003-04-29

Similar Documents

Publication Publication Date Title
TW410464B (en) Semiconductor device having both memory and logic circuit and its manufacture
US11195840B2 (en) Method and structures pertaining to improved ferroelectric random-access memory (FeRAM)
KR100375428B1 (ko) 반도체기억장치 및 그 제조방법
TW508798B (en) Semiconductor integrated circuit device and its manufacturing method
TW517381B (en) Semiconductor device and its manufacturing method
US7375389B2 (en) Semiconductor device having a capacitor-under-bitline structure and method of manufacturing the same
JPWO1997019468A1 (ja) 半導体記憶装置およびその製造方法
US6335241B1 (en) Semiconductor device and manufacturing method thereof
TW512519B (en) Semiconductor integrated circuit device and the method of producing the same
KR20000023051A (ko) 반도체집적회로장치의 제조방법
JP2000101048A (ja) コンデンサ及びコンデンサの作製方法
TW508757B (en) Semiconductor integrated circuit device and process for manufacturing the same
US7781820B2 (en) Semiconductor memory device and method of manufacturing the same
TW531849B (en) Memory-logic semiconductor device
KR20020052945A (ko) 반도체 장치 및 그 제조 방법
JP4053702B2 (ja) 半導体記憶装置及びその製造方法
US6573553B2 (en) Semiconductor device and method for fabricating the same
US6964899B2 (en) Semiconductor device and method of manufacturing the same
US6146937A (en) Method of forming a DRAM device utilizing a sacrificial doped oxide layer
JPH09232542A (ja) 半導体装置およびその製造方法
US7226837B2 (en) Semiconductor device and method for fabricating the same
JP3895099B2 (ja) 半導体装置及びその製造方法
JP2001068648A (ja) 半導体装置及びその製造方法
US20050186743A1 (en) Method for manufacturing semiconductor device
JP4394177B2 (ja) 半導体装置及びその製造方法

Legal Events

Date Code Title Description
GD4A Issue of patent certificate for granted invention patent
MK4A Expiration of patent term of an invention patent