JP3645463B2 - 半導体集積回路装置 - Google Patents

半導体集積回路装置 Download PDF

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Publication number
JP3645463B2
JP3645463B2 JP2000013476A JP2000013476A JP3645463B2 JP 3645463 B2 JP3645463 B2 JP 3645463B2 JP 2000013476 A JP2000013476 A JP 2000013476A JP 2000013476 A JP2000013476 A JP 2000013476A JP 3645463 B2 JP3645463 B2 JP 3645463B2
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JP
Japan
Prior art keywords
film
insulating film
silicon oxide
gate electrode
contact hole
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2000013476A
Other languages
English (en)
Japanese (ja)
Other versions
JP2001203337A5 (enExample
JP2001203337A (ja
Inventor
悟 山田
静憲 大湯
尚文 徳永
裕之 榎本
敏宏 関口
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=18541062&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=JP3645463(B2) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Priority to JP2000013476A priority Critical patent/JP3645463B2/ja
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to TW090100268A priority patent/TW508757B/zh
Priority to KR1020010003400A priority patent/KR100737200B1/ko
Priority to US09/765,574 priority patent/US6555861B2/en
Publication of JP2001203337A publication Critical patent/JP2001203337A/ja
Priority to US10/396,339 priority patent/US6791137B2/en
Publication of JP2001203337A5 publication Critical patent/JP2001203337A5/ja
Publication of JP3645463B2 publication Critical patent/JP3645463B2/ja
Application granted granted Critical
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/48—Data lines or contacts therefor
    • H10B12/485—Bit line contacts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
    • H10B12/0335—Making a connection between the transistor and the capacitor, e.g. plug
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
    • H10B12/315—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor with the capacitor higher than a bit line
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/48—Data lines or contacts therefor
    • H10B12/488—Word lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes
    • H10D1/711—Electrodes having non-planar surfaces, e.g. formed by texturisation
    • H10D1/716—Electrodes having non-planar surfaces, e.g. formed by texturisation having vertical extensions
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/906—Dram with capacitor electrodes used for accessing, e.g. bit line is capacitor plate

Landscapes

  • Semiconductor Memories (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP2000013476A 2000-01-21 2000-01-21 半導体集積回路装置 Expired - Fee Related JP3645463B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2000013476A JP3645463B2 (ja) 2000-01-21 2000-01-21 半導体集積回路装置
TW090100268A TW508757B (en) 2000-01-21 2001-01-05 Semiconductor integrated circuit device and process for manufacturing the same
KR1020010003400A KR100737200B1 (ko) 2000-01-21 2001-01-20 반도체 집적 회로 장치
US09/765,574 US6555861B2 (en) 2000-01-21 2001-01-22 Semiconductor integrated circuit device and process for manufacturing the same
US10/396,339 US6791137B2 (en) 2000-01-21 2003-03-26 Semiconductor integrated circuit device and process for manufacturing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000013476A JP3645463B2 (ja) 2000-01-21 2000-01-21 半導体集積回路装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2004367664A Division JP4215711B2 (ja) 2004-12-20 2004-12-20 半導体集積回路装置およびその製造方法

Publications (3)

Publication Number Publication Date
JP2001203337A JP2001203337A (ja) 2001-07-27
JP2001203337A5 JP2001203337A5 (enExample) 2005-02-03
JP3645463B2 true JP3645463B2 (ja) 2005-05-11

Family

ID=18541062

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000013476A Expired - Fee Related JP3645463B2 (ja) 2000-01-21 2000-01-21 半導体集積回路装置

Country Status (4)

Country Link
US (2) US6555861B2 (enExample)
JP (1) JP3645463B2 (enExample)
KR (1) KR100737200B1 (enExample)
TW (1) TW508757B (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002217383A (ja) * 2001-01-12 2002-08-02 Hitachi Ltd 半導体集積回路装置の製造方法および半導体集積回路装置
JP4528504B2 (ja) * 2003-08-22 2010-08-18 ルネサスエレクトロニクス株式会社 半導体装置とその製造方法
KR100809597B1 (ko) * 2006-04-06 2008-03-04 삼성전자주식회사 미세 패턴 형성 방법 및 이를 이용한 반도체 메모리 장치의형성 방법
JP2008021809A (ja) * 2006-07-12 2008-01-31 Elpida Memory Inc 半導体装置およびその製造方法
KR100891329B1 (ko) * 2007-01-26 2009-03-31 삼성전자주식회사 반도체 소자 및 그 제조 방법
JP2010287853A (ja) * 2009-06-15 2010-12-24 Elpida Memory Inc 半導体装置及びその製造方法
US8487369B2 (en) * 2009-10-30 2013-07-16 Hynix Semiconductor Inc. Semiconductor device with buried gates and buried bit lines and method for fabricating the same
JP2011216526A (ja) * 2010-03-31 2011-10-27 Renesas Electronics Corp 半導体装置の製造方法、及び半導体装置
JP2012134395A (ja) * 2010-12-22 2012-07-12 Elpida Memory Inc 半導体装置および半導体装置の製造方法
US20160322473A1 (en) * 2015-04-30 2016-11-03 Taiwan Semiconductor Manufacturing Company, Ltd. Buffer Layer on Gate and Methods of Forming the Same
CN116133436A (zh) * 2021-11-12 2023-05-16 联华电子股份有限公司 半导体元件及其制作方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07106437A (ja) 1993-10-01 1995-04-21 Hitachi Ltd 半導体記憶装置
JP3203118B2 (ja) 1993-12-27 2001-08-27 三洋電機株式会社 非水電解液二次電池
JPH08204144A (ja) 1995-01-24 1996-08-09 Hitachi Ltd 半導体集積回路装置およびその製造方法
JP2953404B2 (ja) * 1995-12-08 1999-09-27 ソニー株式会社 半導体装置及びその製造方法
JPH1027906A (ja) * 1996-07-09 1998-01-27 Nippon Steel Corp 半導体装置の製造方法
JPH1032245A (ja) * 1996-07-17 1998-02-03 Toshiba Corp 半導体装置の製造方法
JP3869089B2 (ja) * 1996-11-14 2007-01-17 株式会社日立製作所 半導体集積回路装置の製造方法
JPH10335652A (ja) * 1997-05-30 1998-12-18 Hitachi Ltd 半導体集積回路装置の製造方法
JP3701469B2 (ja) * 1998-06-12 2005-09-28 株式会社ルネサステクノロジ 半導体集積回路装置の製造方法
JP2000013476A (ja) 1998-06-24 2000-01-14 Matsushita Electric Ind Co Ltd 電話装置

Also Published As

Publication number Publication date
TW508757B (en) 2002-11-01
US20030183941A1 (en) 2003-10-02
JP2001203337A (ja) 2001-07-27
US6791137B2 (en) 2004-09-14
KR100737200B1 (ko) 2007-07-10
US20020043680A1 (en) 2002-04-18
KR20010076421A (ko) 2001-08-11
US6555861B2 (en) 2003-04-29

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