TW498424B - An electron device manufacturing method, a pattern forming method, and a photomask used for those methods - Google Patents

An electron device manufacturing method, a pattern forming method, and a photomask used for those methods Download PDF

Info

Publication number
TW498424B
TW498424B TW090105984A TW90105984A TW498424B TW 498424 B TW498424 B TW 498424B TW 090105984 A TW090105984 A TW 090105984A TW 90105984 A TW90105984 A TW 90105984A TW 498424 B TW498424 B TW 498424B
Authority
TW
Taiwan
Prior art keywords
film
light
pattern
shielding
photomask
Prior art date
Application number
TW090105984A
Other languages
English (en)
Chinese (zh)
Inventor
Toshihiko Tanaka
Norio Hasegawa
Hiroshi Shiraishi
Hidetoshi Satoh
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Application granted granted Critical
Publication of TW498424B publication Critical patent/TW498424B/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/30—Alternating PSM, e.g. Levenson-Shibuya PSM; Preparation thereof

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
TW090105984A 2000-04-25 2001-03-14 An electron device manufacturing method, a pattern forming method, and a photomask used for those methods TW498424B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000128944A JP3749083B2 (ja) 2000-04-25 2000-04-25 電子装置の製造方法

Publications (1)

Publication Number Publication Date
TW498424B true TW498424B (en) 2002-08-11

Family

ID=18638298

Family Applications (1)

Application Number Title Priority Date Filing Date
TW090105984A TW498424B (en) 2000-04-25 2001-03-14 An electron device manufacturing method, a pattern forming method, and a photomask used for those methods

Country Status (4)

Country Link
US (2) US6653052B2 (https=)
JP (1) JP3749083B2 (https=)
KR (1) KR100749077B1 (https=)
TW (1) TW498424B (https=)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI477893B (zh) * 2011-07-06 2015-03-21 國立成功大學 光罩之製造方法
TWI478210B (zh) * 2011-07-01 2015-03-21 Univ Nat Cheng Kung 光罩
TWI700548B (zh) * 2015-07-17 2020-08-01 日商凸版印刷股份有限公司 金屬遮罩基材及金屬遮罩基材的管理方法
TWI709006B (zh) * 2014-04-01 2020-11-01 日商尼康股份有限公司 圖案描繪裝置及圖案描繪方法

Families Citing this family (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6547139B1 (en) * 1998-07-10 2003-04-15 Welch Allyn Data Collection, Inc. Method and apparatus for extending operating range of bar code scanner
TW541605B (en) * 2000-07-07 2003-07-11 Hitachi Ltd Fabrication method of semiconductor integrated circuit device
US20030014146A1 (en) * 2001-07-12 2003-01-16 Kabushiki Kaisha Toshiba Dangerous process/pattern detection system and method, danger detection program, and semiconductor device manufacturing method
JP3929307B2 (ja) * 2001-12-28 2007-06-13 株式会社ルネサステクノロジ 水性アルカリ可溶性樹脂および感光性樹脂組成物
KR100566151B1 (ko) * 2002-03-25 2006-03-31 에이에스엠엘 마스크툴즈 비.브이. 무크롬 상 리소그래피를 이용하여 상 및 크롬영역으로반도체디바이스패턴을 분해하는 방법 및 장치
JP3988873B2 (ja) * 2002-08-22 2007-10-10 富士通株式会社 半導体装置の製造方法
TWI286663B (en) * 2003-06-30 2007-09-11 Hoya Corp Method for manufacturing gray tone mask, and gray tone mask
JP2005203579A (ja) * 2004-01-16 2005-07-28 Chi Mei Electronics Corp 配線抵抗を低減したアレイ基板およびその製造方法
JP2005257962A (ja) * 2004-03-11 2005-09-22 Semiconductor Leading Edge Technologies Inc 位相シフトマスク及び位相シフトマスクの製造方法
US7449284B2 (en) * 2004-05-11 2008-11-11 Miradia Inc. Method and structure for fabricating mechanical mirror structures using backside alignment techniques
JP2005352180A (ja) * 2004-06-10 2005-12-22 Renesas Technology Corp 半導体装置の製造方法
JP4758427B2 (ja) * 2004-07-21 2011-08-31 ケーエルエー−テンカー コーポレイション シミュレーション・プログラムのための入力生成、あるいは、レチクルのシミュレート画像生成のためのコンピュータに実装された方法
JP4587806B2 (ja) * 2004-12-27 2010-11-24 Ｈｏｙａ株式会社 ハーフトーン型位相シフトマスクブランク及びハーフトーン型位相シフトマスク
JP2006201538A (ja) * 2005-01-21 2006-08-03 Seiko Epson Corp マスク、マスクの製造方法、パターン形成方法、配線パターン形成方法
JP2006229147A (ja) * 2005-02-21 2006-08-31 Toshiba Corp 半導体装置のレイアウト最適化方法、フォトマスクの製造方法、半導体装置の製造方法およびプログラム
TW200641517A (en) * 2005-05-19 2006-12-01 Promos Technologies Inc Levenson phase shifting mask and method for preparing the same and method for preparing a semiconductor device using the same
DE102005030122A1 (de) * 2005-06-28 2007-01-04 Infineon Technologies Ag Photolithographische Maske und Verfahren zum Bilden eines Musters auf der Maske
SG150514A1 (en) * 2005-08-12 2009-03-30 Cambrios Technologies Corp Nanowires-based transparent conductors
TWI269937B (en) * 2005-10-13 2007-01-01 Promos Technologies Inc Phase shifting mask and method for preparing the same and method for preparing a semiconductor device using the same
JP2007286427A (ja) 2006-04-18 2007-11-01 Sony Corp マスクパターン生成方法
JP2007298856A (ja) * 2006-05-02 2007-11-15 Sii Nanotechnology Inc 半導体マスク修正装置及び半導体マスク修正方法
US20080241745A1 (en) * 2007-03-29 2008-10-02 Fujifilm Corporation Negative resist composition and pattern forming method using the same
US8318536B2 (en) * 2007-12-31 2012-11-27 Intel Corporation Utilizing aperture with phase shift feature in forming microvias
US8243878B2 (en) 2010-01-07 2012-08-14 Jordan Valley Semiconductors Ltd. High-resolution X-ray diffraction measurement with enhanced sensitivity
US8687766B2 (en) * 2010-07-13 2014-04-01 Jordan Valley Semiconductors Ltd. Enhancing accuracy of fast high-resolution X-ray diffractometry
JP5365651B2 (ja) * 2011-02-28 2013-12-11 信越化学工業株式会社 化学増幅ネガ型レジスト組成物及びパターン形成方法
JP2014124757A (ja) * 2012-12-27 2014-07-07 Mitsuboshi Diamond Industrial Co Ltd 加工装置
KR102166222B1 (ko) * 2013-01-15 2020-10-15 호야 가부시키가이샤 마스크 블랭크, 위상 시프트 마스크 및 이들의 제조 방법
US9589880B2 (en) * 2013-10-09 2017-03-07 Infineon Technologies Ag Method for processing a wafer and wafer structure
JP6271780B2 (ja) * 2017-02-01 2018-01-31 Hoya株式会社 マスクブランク、位相シフトマスクおよび半導体デバイスの製造方法
JP6991739B2 (ja) * 2017-05-12 2022-01-13 キヤノン株式会社 半導体装置の製造方法
KR102337235B1 (ko) * 2019-08-05 2021-12-09 주식회사 포트로닉스 천안 하프톤 위상반전마스크 및 그 제조 방법
US12485420B2 (en) * 2021-06-03 2025-12-02 Verily Life Sciences Llc Systems and methods for multi-junction particle sorting in injection-molded articles
CN119310679B (zh) * 2024-12-12 2025-04-08 度亘核芯光电技术(苏州)有限公司 脊波导制备方法、脊波导以及激光器

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3374452D1 (en) 1982-04-05 1987-12-17 Ibm Method of increasing the image resolution of a transmitting mask and improved masks for performing the method
KR100249726B1 (ko) * 1992-04-08 2000-03-15 기타지마 요시토시 위상쉬프트포토마스크
JPH05289307A (ja) 1992-04-13 1993-11-05 Matsushita Electric Ind Co Ltd レチクルおよびレチクル製造方法
US5547787A (en) * 1992-04-22 1996-08-20 Kabushiki Kaisha Toshiba Exposure mask, exposure mask substrate, method for fabricating the same, and method for forming pattern based on exposure mask
US5631109A (en) * 1992-07-17 1997-05-20 Kabushiki Kaisha Toshiba Exposure mask comprising transparent and translucent phase shift patterns
US5348826A (en) * 1992-08-21 1994-09-20 Intel Corporation Reticle with structurally identical inverted phase-shifted features
US5472814A (en) * 1994-11-17 1995-12-05 International Business Machines Corporation Orthogonally separated phase shifted and unphase shifted mask patterns for image improvement
JPH09211837A (ja) 1996-01-30 1997-08-15 Sanyo Electric Co Ltd 位相シフトマスク及びその製造方法
KR100189741B1 (ko) * 1996-07-19 1999-06-01 구본준 위상반전마스크 및 그의 제조방법
JPH1064788A (ja) * 1996-08-22 1998-03-06 Toshiba Corp 半導体装置の製造方法と露光用マスク

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI478210B (zh) * 2011-07-01 2015-03-21 Univ Nat Cheng Kung 光罩
TWI477893B (zh) * 2011-07-06 2015-03-21 國立成功大學 光罩之製造方法
TWI709006B (zh) * 2014-04-01 2020-11-01 日商尼康股份有限公司 圖案描繪裝置及圖案描繪方法
TWI700548B (zh) * 2015-07-17 2020-08-01 日商凸版印刷股份有限公司 金屬遮罩基材及金屬遮罩基材的管理方法

Also Published As

Publication number Publication date
US6653052B2 (en) 2003-11-25
JP3749083B2 (ja) 2006-02-22
US20010033995A1 (en) 2001-10-25
KR100749077B1 (ko) 2007-08-13
JP2001305714A (ja) 2001-11-02
US20040043307A1 (en) 2004-03-04
US6750000B2 (en) 2004-06-15
KR20010098405A (ko) 2001-11-08

Similar Documents

Publication Publication Date Title
TW498424B (en) An electron device manufacturing method, a pattern forming method, and a photomask used for those methods
CN100507713C (zh) 光掩模及其制造方法和使用光掩模的半导体装置制造方法
US5362591A (en) Mask having a phase shifter and method of manufacturing same
TW497165B (en) Method for manufacturing semiconductor integrated circuit device, optical mask used therefor, method for manufacturing the same, and mask blanks used therefor
US7855035B2 (en) Exposure mask, manufacturing method of electronic device, and checking method of exposure mask
TWI262546B (en) Manufacturing method of mask and manufacturing method of semiconductor integrated circuit device
JPH0950116A (ja) フォトマスク及びその製造方法並びにそのフォトマスクを用いた露光方法
TWI622849B (zh) 光罩、光罩組、光罩之製造方法、及顯示裝置之製造方法
JP2009058877A (ja) フォトマスク及びそれを用いたパターン形成方法
KR0184277B1 (ko) 위상시프터를 갖는 마스크와 그 제조방법 및 그 마스크를 사용한 패턴형성방법
US5902717A (en) Method of fabricating semiconductor device using half-tone phase shift mask
KR20110001804A (ko) 오버레이 버니어 패턴을 이용한 하부 단차 변화 측정 방법
KR101080008B1 (ko) 하드마스크용 원판 및 이를 이용한 하드마스크 제조방법
US7498105B2 (en) Method for checking phase shift angle of phase shift mask, lithography process and phase shift mask
JPH06324475A (ja) レチクル
JP2850879B2 (ja) 半導体素子のワード線製造方法
JP2007019307A (ja) 半導体ウエーハのおける位置精度検証用マークの形成方法、及びアライメント用マークの形成方法
KR100870347B1 (ko) 이미지 소자의 제조 방법
JP3422054B2 (ja) 光学マスクおよびその製造方法
JPH10198018A (ja) 減衰型位相シフトマスクおよびその製造方法
KR100669559B1 (ko) 콘택홀용 위상반전마스크
KR100593473B1 (ko) 반도체 장치의 오버레이 버니어 형성 방법
KR970009821B1 (ko) 반도체소자의 제조방법
KR20090001076A (ko) 오버레이 버니어 형성 방법 및 오버레이 측정 방법
KR20020040236A (ko) 위상반전 마스크 및 그 제조방법

Legal Events

Date Code Title Description
GD4A Issue of patent certificate for granted invention patent
MM4A Annulment or lapse of patent due to non-payment of fees