JP3749083B2 - 電子装置の製造方法 - Google Patents

電子装置の製造方法 Download PDF

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Publication number
JP3749083B2
JP3749083B2 JP2000128944A JP2000128944A JP3749083B2 JP 3749083 B2 JP3749083 B2 JP 3749083B2 JP 2000128944 A JP2000128944 A JP 2000128944A JP 2000128944 A JP2000128944 A JP 2000128944A JP 3749083 B2 JP3749083 B2 JP 3749083B2
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JP
Japan
Prior art keywords
pattern
film
mask
light
shifter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2000128944A
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English (en)
Japanese (ja)
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JP2001305714A (ja
JP2001305714A5 (https=
Inventor
稔彦 田中
昇雄 長谷川
洋 白石
秀寿 佐藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Renesas Technology Corp
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Renesas Technology Corp
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Filing date
Publication date
Application filed by Renesas Technology Corp filed Critical Renesas Technology Corp
Priority to JP2000128944A priority Critical patent/JP3749083B2/ja
Priority to KR1020010013227A priority patent/KR100749077B1/ko
Priority to TW090105984A priority patent/TW498424B/zh
Priority to US09/810,194 priority patent/US6653052B2/en
Publication of JP2001305714A publication Critical patent/JP2001305714A/ja
Priority to US10/671,666 priority patent/US6750000B2/en
Publication of JP2001305714A5 publication Critical patent/JP2001305714A5/ja
Application granted granted Critical
Publication of JP3749083B2 publication Critical patent/JP3749083B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/30—Alternating PSM, e.g. Levenson-Shibuya PSM; Preparation thereof

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2000128944A 2000-04-25 2000-04-25 電子装置の製造方法 Expired - Fee Related JP3749083B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2000128944A JP3749083B2 (ja) 2000-04-25 2000-04-25 電子装置の製造方法
KR1020010013227A KR100749077B1 (ko) 2000-04-25 2001-03-14 전자장치의 제조방법, 패턴형성방법 및 이들을 이용한포토마스크
TW090105984A TW498424B (en) 2000-04-25 2001-03-14 An electron device manufacturing method, a pattern forming method, and a photomask used for those methods
US09/810,194 US6653052B2 (en) 2000-04-25 2001-03-19 Electron device manufacturing method, a pattern forming method, and a photomask used for those methods
US10/671,666 US6750000B2 (en) 2000-04-25 2003-09-29 Electron device manufacturing method, a pattern forming method, and a photomask used for those methods

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000128944A JP3749083B2 (ja) 2000-04-25 2000-04-25 電子装置の製造方法

Publications (3)

Publication Number Publication Date
JP2001305714A JP2001305714A (ja) 2001-11-02
JP2001305714A5 JP2001305714A5 (https=) 2004-12-16
JP3749083B2 true JP3749083B2 (ja) 2006-02-22

Family

ID=18638298

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000128944A Expired - Fee Related JP3749083B2 (ja) 2000-04-25 2000-04-25 電子装置の製造方法

Country Status (4)

Country Link
US (2) US6653052B2 (https=)
JP (1) JP3749083B2 (https=)
KR (1) KR100749077B1 (https=)
TW (1) TW498424B (https=)

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TW541605B (en) * 2000-07-07 2003-07-11 Hitachi Ltd Fabrication method of semiconductor integrated circuit device
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KR100566151B1 (ko) * 2002-03-25 2006-03-31 에이에스엠엘 마스크툴즈 비.브이. 무크롬 상 리소그래피를 이용하여 상 및 크롬영역으로반도체디바이스패턴을 분해하는 방법 및 장치
JP3988873B2 (ja) * 2002-08-22 2007-10-10 富士通株式会社 半導体装置の製造方法
TWI286663B (en) * 2003-06-30 2007-09-11 Hoya Corp Method for manufacturing gray tone mask, and gray tone mask
JP2005203579A (ja) * 2004-01-16 2005-07-28 Chi Mei Electronics Corp 配線抵抗を低減したアレイ基板およびその製造方法
JP2005257962A (ja) * 2004-03-11 2005-09-22 Semiconductor Leading Edge Technologies Inc 位相シフトマスク及び位相シフトマスクの製造方法
US7449284B2 (en) * 2004-05-11 2008-11-11 Miradia Inc. Method and structure for fabricating mechanical mirror structures using backside alignment techniques
JP2005352180A (ja) * 2004-06-10 2005-12-22 Renesas Technology Corp 半導体装置の製造方法
JP4758427B2 (ja) * 2004-07-21 2011-08-31 ケーエルエー−テンカー コーポレイション シミュレーション・プログラムのための入力生成、あるいは、レチクルのシミュレート画像生成のためのコンピュータに実装された方法
JP4587806B2 (ja) * 2004-12-27 2010-11-24 Ｈｏｙａ株式会社 ハーフトーン型位相シフトマスクブランク及びハーフトーン型位相シフトマスク
JP2006201538A (ja) * 2005-01-21 2006-08-03 Seiko Epson Corp マスク、マスクの製造方法、パターン形成方法、配線パターン形成方法
JP2006229147A (ja) * 2005-02-21 2006-08-31 Toshiba Corp 半導体装置のレイアウト最適化方法、フォトマスクの製造方法、半導体装置の製造方法およびプログラム
TW200641517A (en) * 2005-05-19 2006-12-01 Promos Technologies Inc Levenson phase shifting mask and method for preparing the same and method for preparing a semiconductor device using the same
DE102005030122A1 (de) * 2005-06-28 2007-01-04 Infineon Technologies Ag Photolithographische Maske und Verfahren zum Bilden eines Musters auf der Maske
SG150514A1 (en) * 2005-08-12 2009-03-30 Cambrios Technologies Corp Nanowires-based transparent conductors
TWI269937B (en) * 2005-10-13 2007-01-01 Promos Technologies Inc Phase shifting mask and method for preparing the same and method for preparing a semiconductor device using the same
JP2007286427A (ja) 2006-04-18 2007-11-01 Sony Corp マスクパターン生成方法
JP2007298856A (ja) * 2006-05-02 2007-11-15 Sii Nanotechnology Inc 半導体マスク修正装置及び半導体マスク修正方法
US20080241745A1 (en) * 2007-03-29 2008-10-02 Fujifilm Corporation Negative resist composition and pattern forming method using the same
US8318536B2 (en) * 2007-12-31 2012-11-27 Intel Corporation Utilizing aperture with phase shift feature in forming microvias
US8243878B2 (en) 2010-01-07 2012-08-14 Jordan Valley Semiconductors Ltd. High-resolution X-ray diffraction measurement with enhanced sensitivity
US8687766B2 (en) * 2010-07-13 2014-04-01 Jordan Valley Semiconductors Ltd. Enhancing accuracy of fast high-resolution X-ray diffractometry
JP5365651B2 (ja) * 2011-02-28 2013-12-11 信越化学工業株式会社 化学増幅ネガ型レジスト組成物及びパターン形成方法
TWI478210B (zh) * 2011-07-01 2015-03-21 Univ Nat Cheng Kung 光罩
TWI477893B (zh) * 2011-07-06 2015-03-21 國立成功大學 光罩之製造方法
JP2014124757A (ja) * 2012-12-27 2014-07-07 Mitsuboshi Diamond Industrial Co Ltd 加工装置
KR102166222B1 (ko) * 2013-01-15 2020-10-15 호야 가부시키가이샤 마스크 블랭크, 위상 시프트 마스크 및 이들의 제조 방법
US9589880B2 (en) * 2013-10-09 2017-03-07 Infineon Technologies Ag Method for processing a wafer and wafer structure
TWI674484B (zh) * 2014-04-01 2019-10-11 日商尼康股份有限公司 基板處理方法
WO2017013904A1 (ja) * 2015-07-17 2017-01-26 凸版印刷株式会社 メタルマスク基材、メタルマスク基材の管理方法、メタルマスク、および、メタルマスクの製造方法
JP6271780B2 (ja) * 2017-02-01 2018-01-31 Hoya株式会社 マスクブランク、位相シフトマスクおよび半導体デバイスの製造方法
JP6991739B2 (ja) * 2017-05-12 2022-01-13 キヤノン株式会社 半導体装置の製造方法
KR102337235B1 (ko) * 2019-08-05 2021-12-09 주식회사 포트로닉스 천안 하프톤 위상반전마스크 및 그 제조 방법
US12485420B2 (en) * 2021-06-03 2025-12-02 Verily Life Sciences Llc Systems and methods for multi-junction particle sorting in injection-molded articles
CN119310679B (zh) * 2024-12-12 2025-04-08 度亘核芯光电技术(苏州)有限公司 脊波导制备方法、脊波导以及激光器

Family Cites Families (10)

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DE3374452D1 (en) 1982-04-05 1987-12-17 Ibm Method of increasing the image resolution of a transmitting mask and improved masks for performing the method
KR100249726B1 (ko) * 1992-04-08 2000-03-15 기타지마 요시토시 위상쉬프트포토마스크
JPH05289307A (ja) 1992-04-13 1993-11-05 Matsushita Electric Ind Co Ltd レチクルおよびレチクル製造方法
US5547787A (en) * 1992-04-22 1996-08-20 Kabushiki Kaisha Toshiba Exposure mask, exposure mask substrate, method for fabricating the same, and method for forming pattern based on exposure mask
US5631109A (en) * 1992-07-17 1997-05-20 Kabushiki Kaisha Toshiba Exposure mask comprising transparent and translucent phase shift patterns
US5348826A (en) * 1992-08-21 1994-09-20 Intel Corporation Reticle with structurally identical inverted phase-shifted features
US5472814A (en) * 1994-11-17 1995-12-05 International Business Machines Corporation Orthogonally separated phase shifted and unphase shifted mask patterns for image improvement
JPH09211837A (ja) 1996-01-30 1997-08-15 Sanyo Electric Co Ltd 位相シフトマスク及びその製造方法
KR100189741B1 (ko) * 1996-07-19 1999-06-01 구본준 위상반전마스크 및 그의 제조방법
JPH1064788A (ja) * 1996-08-22 1998-03-06 Toshiba Corp 半導体装置の製造方法と露光用マスク

Also Published As

Publication number Publication date
US6653052B2 (en) 2003-11-25
US20010033995A1 (en) 2001-10-25
KR100749077B1 (ko) 2007-08-13
JP2001305714A (ja) 2001-11-02
US20040043307A1 (en) 2004-03-04
TW498424B (en) 2002-08-11
US6750000B2 (en) 2004-06-15
KR20010098405A (ko) 2001-11-08

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