TW498424B - An electron device manufacturing method, a pattern forming method, and a photomask used for those methods - Google Patents
An electron device manufacturing method, a pattern forming method, and a photomask used for those methods Download PDFInfo
- Publication number
- TW498424B TW498424B TW090105984A TW90105984A TW498424B TW 498424 B TW498424 B TW 498424B TW 090105984 A TW090105984 A TW 090105984A TW 90105984 A TW90105984 A TW 90105984A TW 498424 B TW498424 B TW 498424B
- Authority
- TW
- Taiwan
- Prior art keywords
- film
- light
- pattern
- shielding
- photomask
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 100
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 86
- 230000010363 phase shift Effects 0.000 claims abstract description 77
- 229910052755 nonmetal Inorganic materials 0.000 claims abstract description 6
- 229920002120 photoresistant polymer Polymers 0.000 claims description 151
- 229910052751 metal Inorganic materials 0.000 claims description 92
- 239000002184 metal Substances 0.000 claims description 92
- 239000000758 substrate Substances 0.000 claims description 76
- 238000011049 filling Methods 0.000 claims description 54
- 230000002079 cooperative effect Effects 0.000 claims description 16
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- 229920005989 resin Polymers 0.000 claims description 15
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- 229920000767 polyaniline Polymers 0.000 claims description 7
- 229920001568 phenolic resin Polymers 0.000 claims description 5
- KXGFMDJXCMQABM-UHFFFAOYSA-N 2-methoxy-6-methylphenol Chemical compound [CH]OC1=CC=CC([CH])=C1O KXGFMDJXCMQABM-UHFFFAOYSA-N 0.000 claims description 4
- 239000000203 mixture Substances 0.000 claims description 3
- PAYRUJLWNCNPSJ-UHFFFAOYSA-N Aniline Chemical compound NC1=CC=CC=C1 PAYRUJLWNCNPSJ-UHFFFAOYSA-N 0.000 claims 2
- 238000012856 packing Methods 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 abstract description 58
- 238000005516 engineering process Methods 0.000 abstract description 28
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- 239000011651 chromium Substances 0.000 description 24
- 239000011521 glass Substances 0.000 description 24
- 238000007689 inspection Methods 0.000 description 23
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 23
- 235000012431 wafers Nutrition 0.000 description 23
- 238000011161 development Methods 0.000 description 20
- 230000018109 developmental process Effects 0.000 description 20
- 238000000576 coating method Methods 0.000 description 15
- 238000001514 detection method Methods 0.000 description 15
- 238000006073 displacement reaction Methods 0.000 description 15
- 238000010438 heat treatment Methods 0.000 description 15
- 230000015572 biosynthetic process Effects 0.000 description 13
- 239000011248 coating agent Substances 0.000 description 13
- 239000010409 thin film Substances 0.000 description 13
- 238000012545 processing Methods 0.000 description 11
- 239000010453 quartz Substances 0.000 description 10
- 238000010894 electron beam technology Methods 0.000 description 9
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- JFALSRSLKYAFGM-UHFFFAOYSA-N uranium(0) Chemical compound [U] JFALSRSLKYAFGM-UHFFFAOYSA-N 0.000 description 8
- 238000004458 analytical method Methods 0.000 description 7
- 238000012937 correction Methods 0.000 description 7
- 239000004922 lacquer Substances 0.000 description 7
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N phenol group Chemical group C1(=CC=CC=C1)O ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 7
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- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 3
- 238000002835 absorbance Methods 0.000 description 3
- 229910052804 chromium Inorganic materials 0.000 description 3
- 239000002131 composite material Substances 0.000 description 3
- 230000000875 corresponding effect Effects 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 229910052736 halogen Inorganic materials 0.000 description 3
- 150000002367 halogens Chemical class 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- VZSRBBMJRBPUNF-UHFFFAOYSA-N 2-(2,3-dihydro-1H-inden-2-ylamino)-N-[3-oxo-3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propyl]pyrimidine-5-carboxamide Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)C(=O)NCCC(N1CC2=C(CC1)NN=N2)=O VZSRBBMJRBPUNF-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
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- 150000001875 compounds Chemical class 0.000 description 2
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- 238000006731 degradation reaction Methods 0.000 description 2
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- 238000013461 design Methods 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
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- 230000007246 mechanism Effects 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 238000012552 review Methods 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910016006 MoSi Inorganic materials 0.000 description 1
- AFCARXCZXQIEQB-UHFFFAOYSA-N N-[3-oxo-3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propyl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C(CCNC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)N1CC2=C(CC1)NN=N2 AFCARXCZXQIEQB-UHFFFAOYSA-N 0.000 description 1
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000000149 argon plasma sintering Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 229910000423 chromium oxide Inorganic materials 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
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- 125000000524 functional group Chemical group 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
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- -1 or A1 Substances 0.000 description 1
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- 239000002887 superconductor Substances 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- HLLICFJUWSZHRJ-UHFFFAOYSA-N tioxidazole Chemical compound CCCOC1=CC=C2N=C(NC(=O)OC)SC2=C1 HLLICFJUWSZHRJ-UHFFFAOYSA-N 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
- G03F1/30—Alternating PSM, e.g. Levenson-Shibuya PSM; Preparation thereof
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000128944A JP3749083B2 (ja) | 2000-04-25 | 2000-04-25 | 電子装置の製造方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW498424B true TW498424B (en) | 2002-08-11 |
Family
ID=18638298
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW090105984A TW498424B (en) | 2000-04-25 | 2001-03-14 | An electron device manufacturing method, a pattern forming method, and a photomask used for those methods |
Country Status (4)
| Country | Link |
|---|---|
| US (2) | US6653052B2 (enExample) |
| JP (1) | JP3749083B2 (enExample) |
| KR (1) | KR100749077B1 (enExample) |
| TW (1) | TW498424B (enExample) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI478210B (zh) * | 2011-07-01 | 2015-03-21 | Univ Nat Cheng Kung | 光罩 |
| TWI477893B (zh) * | 2011-07-06 | 2015-03-21 | Univ Nat Cheng Kung | 光罩之製造方法 |
| TWI700548B (zh) * | 2015-07-17 | 2020-08-01 | 日商凸版印刷股份有限公司 | 金屬遮罩基材及金屬遮罩基材的管理方法 |
| TWI709006B (zh) * | 2014-04-01 | 2020-11-01 | 日商尼康股份有限公司 | 圖案描繪裝置及圖案描繪方法 |
Families Citing this family (34)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6547139B1 (en) * | 1998-07-10 | 2003-04-15 | Welch Allyn Data Collection, Inc. | Method and apparatus for extending operating range of bar code scanner |
| TW541605B (en) * | 2000-07-07 | 2003-07-11 | Hitachi Ltd | Fabrication method of semiconductor integrated circuit device |
| US20030014146A1 (en) * | 2001-07-12 | 2003-01-16 | Kabushiki Kaisha Toshiba | Dangerous process/pattern detection system and method, danger detection program, and semiconductor device manufacturing method |
| JP3929307B2 (ja) * | 2001-12-28 | 2007-06-13 | 株式会社ルネサステクノロジ | 水性アルカリ可溶性樹脂および感光性樹脂組成物 |
| US6851103B2 (en) * | 2002-03-25 | 2005-02-01 | Asml Masktools, B.V. | Method and apparatus for decomposing semiconductor device patterns into phase and chrome regions for chromeless phase lithography |
| JP3988873B2 (ja) * | 2002-08-22 | 2007-10-10 | 富士通株式会社 | 半導体装置の製造方法 |
| TWI286663B (en) * | 2003-06-30 | 2007-09-11 | Hoya Corp | Method for manufacturing gray tone mask, and gray tone mask |
| JP2005203579A (ja) * | 2004-01-16 | 2005-07-28 | Chi Mei Electronics Corp | 配線抵抗を低減したアレイ基板およびその製造方法 |
| JP2005257962A (ja) * | 2004-03-11 | 2005-09-22 | Semiconductor Leading Edge Technologies Inc | 位相シフトマスク及び位相シフトマスクの製造方法 |
| US7449284B2 (en) * | 2004-05-11 | 2008-11-11 | Miradia Inc. | Method and structure for fabricating mechanical mirror structures using backside alignment techniques |
| JP2005352180A (ja) * | 2004-06-10 | 2005-12-22 | Renesas Technology Corp | 半導体装置の製造方法 |
| US7788629B2 (en) * | 2004-07-21 | 2010-08-31 | Kla-Tencor Technologies Corp. | Systems configured to perform a non-contact method for determining a property of a specimen |
| JP4587806B2 (ja) * | 2004-12-27 | 2010-11-24 | Ｈｏｙａ株式会社 | ハーフトーン型位相シフトマスクブランク及びハーフトーン型位相シフトマスク |
| JP2006201538A (ja) * | 2005-01-21 | 2006-08-03 | Seiko Epson Corp | マスク、マスクの製造方法、パターン形成方法、配線パターン形成方法 |
| JP2006229147A (ja) * | 2005-02-21 | 2006-08-31 | Toshiba Corp | 半導体装置のレイアウト最適化方法、フォトマスクの製造方法、半導体装置の製造方法およびプログラム |
| TW200641517A (en) * | 2005-05-19 | 2006-12-01 | Promos Technologies Inc | Levenson phase shifting mask and method for preparing the same and method for preparing a semiconductor device using the same |
| DE102005030122A1 (de) * | 2005-06-28 | 2007-01-04 | Infineon Technologies Ag | Photolithographische Maske und Verfahren zum Bilden eines Musters auf der Maske |
| JP5546763B2 (ja) * | 2005-08-12 | 2014-07-09 | カンブリオス テクノロジーズ コーポレイション | ナノワイヤに基づく透明導電体 |
| TWI269937B (en) * | 2005-10-13 | 2007-01-01 | Promos Technologies Inc | Phase shifting mask and method for preparing the same and method for preparing a semiconductor device using the same |
| JP2007286427A (ja) | 2006-04-18 | 2007-11-01 | Sony Corp | マスクパターン生成方法 |
| JP2007298856A (ja) * | 2006-05-02 | 2007-11-15 | Sii Nanotechnology Inc | 半導体マスク修正装置及び半導体マスク修正方法 |
| EP1978408B1 (en) * | 2007-03-29 | 2011-10-12 | FUJIFILM Corporation | Negative resist composition and pattern forming method using the same |
| US8318536B2 (en) * | 2007-12-31 | 2012-11-27 | Intel Corporation | Utilizing aperture with phase shift feature in forming microvias |
| US8243878B2 (en) | 2010-01-07 | 2012-08-14 | Jordan Valley Semiconductors Ltd. | High-resolution X-ray diffraction measurement with enhanced sensitivity |
| US8687766B2 (en) | 2010-07-13 | 2014-04-01 | Jordan Valley Semiconductors Ltd. | Enhancing accuracy of fast high-resolution X-ray diffractometry |
| JP5365651B2 (ja) * | 2011-02-28 | 2013-12-11 | 信越化学工業株式会社 | 化学増幅ネガ型レジスト組成物及びパターン形成方法 |
| JP2014124757A (ja) * | 2012-12-27 | 2014-07-07 | Mitsuboshi Diamond Industrial Co Ltd | 加工装置 |
| CN110673435B (zh) * | 2013-01-15 | 2023-04-21 | Hoya株式会社 | 掩膜板坯料、相移掩膜板及半导体器件的制造方法 |
| US9589880B2 (en) * | 2013-10-09 | 2017-03-07 | Infineon Technologies Ag | Method for processing a wafer and wafer structure |
| JP6271780B2 (ja) * | 2017-02-01 | 2018-01-31 | Hoya株式会社 | マスクブランク、位相シフトマスクおよび半導体デバイスの製造方法 |
| JP6991739B2 (ja) * | 2017-05-12 | 2022-01-13 | キヤノン株式会社 | 半導体装置の製造方法 |
| KR102337235B1 (ko) * | 2019-08-05 | 2021-12-09 | 주식회사 포트로닉스 천안 | 하프톤 위상반전마스크 및 그 제조 방법 |
| US12485420B2 (en) * | 2021-06-03 | 2025-12-02 | Verily Life Sciences Llc | Systems and methods for multi-junction particle sorting in injection-molded articles |
| CN119310679B (zh) * | 2024-12-12 | 2025-04-08 | 度亘核芯光电技术(苏州)有限公司 | 脊波导制备方法、脊波导以及激光器 |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3374452D1 (en) | 1982-04-05 | 1987-12-17 | Ibm | Method of increasing the image resolution of a transmitting mask and improved masks for performing the method |
| KR100249726B1 (ko) * | 1992-04-08 | 2000-03-15 | 기타지마 요시토시 | 위상쉬프트포토마스크 |
| JPH05289307A (ja) | 1992-04-13 | 1993-11-05 | Matsushita Electric Ind Co Ltd | レチクルおよびレチクル製造方法 |
| KR0131192B1 (en) * | 1992-04-22 | 1998-04-14 | Toshiba Corp | Exposed mask, fabrication method of exposed mask substrate and patterning method based on exposed mask |
| US5631109A (en) * | 1992-07-17 | 1997-05-20 | Kabushiki Kaisha Toshiba | Exposure mask comprising transparent and translucent phase shift patterns |
| US5348826A (en) * | 1992-08-21 | 1994-09-20 | Intel Corporation | Reticle with structurally identical inverted phase-shifted features |
| US5472814A (en) * | 1994-11-17 | 1995-12-05 | International Business Machines Corporation | Orthogonally separated phase shifted and unphase shifted mask patterns for image improvement |
| JPH09211837A (ja) | 1996-01-30 | 1997-08-15 | Sanyo Electric Co Ltd | 位相シフトマスク及びその製造方法 |
| KR100189741B1 (ko) * | 1996-07-19 | 1999-06-01 | 구본준 | 위상반전마스크 및 그의 제조방법 |
| JPH1064788A (ja) * | 1996-08-22 | 1998-03-06 | Toshiba Corp | 半導体装置の製造方法と露光用マスク |
-
2000
- 2000-04-25 JP JP2000128944A patent/JP3749083B2/ja not_active Expired - Fee Related
-
2001
- 2001-03-14 TW TW090105984A patent/TW498424B/zh not_active IP Right Cessation
- 2001-03-14 KR KR1020010013227A patent/KR100749077B1/ko not_active Expired - Fee Related
- 2001-03-19 US US09/810,194 patent/US6653052B2/en not_active Expired - Lifetime
-
2003
- 2003-09-29 US US10/671,666 patent/US6750000B2/en not_active Expired - Lifetime
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI478210B (zh) * | 2011-07-01 | 2015-03-21 | Univ Nat Cheng Kung | 光罩 |
| TWI477893B (zh) * | 2011-07-06 | 2015-03-21 | Univ Nat Cheng Kung | 光罩之製造方法 |
| TWI709006B (zh) * | 2014-04-01 | 2020-11-01 | 日商尼康股份有限公司 | 圖案描繪裝置及圖案描繪方法 |
| TWI700548B (zh) * | 2015-07-17 | 2020-08-01 | 日商凸版印刷股份有限公司 | 金屬遮罩基材及金屬遮罩基材的管理方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20010098405A (ko) | 2001-11-08 |
| KR100749077B1 (ko) | 2007-08-13 |
| US20040043307A1 (en) | 2004-03-04 |
| JP2001305714A (ja) | 2001-11-02 |
| US20010033995A1 (en) | 2001-10-25 |
| US6750000B2 (en) | 2004-06-15 |
| JP3749083B2 (ja) | 2006-02-22 |
| US6653052B2 (en) | 2003-11-25 |
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