KR100749077B1 - 전자장치의 제조방법, 패턴형성방법 및 이들을 이용한포토마스크 - Google Patents

전자장치의 제조방법, 패턴형성방법 및 이들을 이용한포토마스크 Download PDF

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Publication number
KR100749077B1
KR100749077B1 KR1020010013227A KR20010013227A KR100749077B1 KR 100749077 B1 KR100749077 B1 KR 100749077B1 KR 1020010013227 A KR1020010013227 A KR 1020010013227A KR 20010013227 A KR20010013227 A KR 20010013227A KR 100749077 B1 KR100749077 B1 KR 100749077B1
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South Korea
Prior art keywords
film
pattern
mask
phase shift
light shielding
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Korean (ko)
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KR20010098405A (ko
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타나카토시히코
하세가와노리오
시라이시히로시
사토오히데토시
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가부시키가이샤 히타치세이사쿠쇼
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/30—Alternating PSM, e.g. Levenson-Shibuya PSM; Preparation thereof

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
KR1020010013227A 2000-04-25 2001-03-14 전자장치의 제조방법, 패턴형성방법 및 이들을 이용한포토마스크 Expired - Fee Related KR100749077B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2000-128944 2000-04-25
JP2000128944A JP3749083B2 (ja) 2000-04-25 2000-04-25 電子装置の製造方法

Publications (2)

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KR20010098405A KR20010098405A (ko) 2001-11-08
KR100749077B1 true KR100749077B1 (ko) 2007-08-13

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US (2) US6653052B2 (enExample)
JP (1) JP3749083B2 (enExample)
KR (1) KR100749077B1 (enExample)
TW (1) TW498424B (enExample)

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DE60306438T2 (de) * 2002-03-25 2007-01-04 Asml Masktools B.V. Verfahren und Vorrichtung zur Zerlegung von Halbleiter-Bauelementmustern in Phasen- und Chromregionen für chromfreie Phasenlithographie
JP3988873B2 (ja) * 2002-08-22 2007-10-10 富士通株式会社 半導体装置の製造方法
TWI286663B (en) * 2003-06-30 2007-09-11 Hoya Corp Method for manufacturing gray tone mask, and gray tone mask
JP2005203579A (ja) * 2004-01-16 2005-07-28 Chi Mei Electronics Corp 配線抵抗を低減したアレイ基板およびその製造方法
JP2005257962A (ja) * 2004-03-11 2005-09-22 Semiconductor Leading Edge Technologies Inc 位相シフトマスク及び位相シフトマスクの製造方法
US7449284B2 (en) * 2004-05-11 2008-11-11 Miradia Inc. Method and structure for fabricating mechanical mirror structures using backside alignment techniques
JP2005352180A (ja) * 2004-06-10 2005-12-22 Renesas Technology Corp 半導体装置の製造方法
JP4758427B2 (ja) * 2004-07-21 2011-08-31 ケーエルエー−テンカー コーポレイション シミュレーション・プログラムのための入力生成、あるいは、レチクルのシミュレート画像生成のためのコンピュータに実装された方法
JP4587806B2 (ja) * 2004-12-27 2010-11-24 Ｈｏｙａ株式会社 ハーフトーン型位相シフトマスクブランク及びハーフトーン型位相シフトマスク
JP2006201538A (ja) * 2005-01-21 2006-08-03 Seiko Epson Corp マスク、マスクの製造方法、パターン形成方法、配線パターン形成方法
JP2006229147A (ja) * 2005-02-21 2006-08-31 Toshiba Corp 半導体装置のレイアウト最適化方法、フォトマスクの製造方法、半導体装置の製造方法およびプログラム
TW200641517A (en) * 2005-05-19 2006-12-01 Promos Technologies Inc Levenson phase shifting mask and method for preparing the same and method for preparing a semiconductor device using the same
DE102005030122A1 (de) * 2005-06-28 2007-01-04 Infineon Technologies Ag Photolithographische Maske und Verfahren zum Bilden eines Musters auf der Maske
KR20120128155A (ko) * 2005-08-12 2012-11-26 캄브리오스 테크놀로지즈 코포레이션 나노와이어 기반의 투명 도전체
TWI269937B (en) * 2005-10-13 2007-01-01 Promos Technologies Inc Phase shifting mask and method for preparing the same and method for preparing a semiconductor device using the same
JP2007286427A (ja) 2006-04-18 2007-11-01 Sony Corp マスクパターン生成方法
JP2007298856A (ja) * 2006-05-02 2007-11-15 Sii Nanotechnology Inc 半導体マスク修正装置及び半導体マスク修正方法
EP1978408B1 (en) * 2007-03-29 2011-10-12 FUJIFILM Corporation Negative resist composition and pattern forming method using the same
US8318536B2 (en) * 2007-12-31 2012-11-27 Intel Corporation Utilizing aperture with phase shift feature in forming microvias
US8243878B2 (en) 2010-01-07 2012-08-14 Jordan Valley Semiconductors Ltd. High-resolution X-ray diffraction measurement with enhanced sensitivity
US8687766B2 (en) * 2010-07-13 2014-04-01 Jordan Valley Semiconductors Ltd. Enhancing accuracy of fast high-resolution X-ray diffractometry
JP5365651B2 (ja) * 2011-02-28 2013-12-11 信越化学工業株式会社 化学増幅ネガ型レジスト組成物及びパターン形成方法
TWI478210B (zh) * 2011-07-01 2015-03-21 Univ Nat Cheng Kung 光罩
TWI477893B (zh) * 2011-07-06 2015-03-21 Univ Nat Cheng Kung 光罩之製造方法
JP2014124757A (ja) * 2012-12-27 2014-07-07 Mitsuboshi Diamond Industrial Co Ltd 加工装置
CN110554561B (zh) * 2013-01-15 2023-03-21 Hoya株式会社 掩膜板坯料、相移掩膜板及半导体器件的制造方法
US9589880B2 (en) * 2013-10-09 2017-03-07 Infineon Technologies Ag Method for processing a wafer and wafer structure
TWI684836B (zh) * 2014-04-01 2020-02-11 日商尼康股份有限公司 圖案描繪裝置
KR101810824B1 (ko) * 2015-07-17 2017-12-19 도판 인사츠 가부시키가이샤 메탈 마스크 기재, 메탈 마스크 기재의 관리 방법, 메탈 마스크, 및, 메탈 마스크의 제조 방법
JP6271780B2 (ja) * 2017-02-01 2018-01-31 Hoya株式会社 マスクブランク、位相シフトマスクおよび半導体デバイスの製造方法
JP6991739B2 (ja) * 2017-05-12 2022-01-13 キヤノン株式会社 半導体装置の製造方法
KR102337235B1 (ko) * 2019-08-05 2021-12-09 주식회사 포트로닉스 천안 하프톤 위상반전마스크 및 그 제조 방법
US12485420B2 (en) * 2021-06-03 2025-12-02 Verily Life Sciences Llc Systems and methods for multi-junction particle sorting in injection-molded articles
CN119310679B (zh) * 2024-12-12 2025-04-08 度亘核芯光电技术(苏州)有限公司 脊波导制备方法、脊波导以及激光器

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KR100189741B1 (ko) * 1996-07-19 1999-06-01 구본준 위상반전마스크 및 그의 제조방법
KR100283836B1 (ko) * 1996-08-22 2001-04-02 니시무로 타이죠 반도체장치의 제조방법 및 노광용 마스크

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JP3749083B2 (ja) 2006-02-22
KR20010098405A (ko) 2001-11-08
TW498424B (en) 2002-08-11
US20010033995A1 (en) 2001-10-25
US6750000B2 (en) 2004-06-15
JP2001305714A (ja) 2001-11-02
US6653052B2 (en) 2003-11-25
US20040043307A1 (en) 2004-03-04

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