TW497368B - Method of reducing plasma-induced damage - Google Patents

Method of reducing plasma-induced damage Download PDF

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Publication number
TW497368B
TW497368B TW090119559A TW90119559A TW497368B TW 497368 B TW497368 B TW 497368B TW 090119559 A TW090119559 A TW 090119559A TW 90119559 A TW90119559 A TW 90119559A TW 497368 B TW497368 B TW 497368B
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TW
Taiwan
Prior art keywords
patent application
item
scope
power
plasma
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Application number
TW090119559A
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English (en)
Chinese (zh)
Inventor
Francimar Campana-Schmitt
Carsten Schimanke
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Applied Materials Inc
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Publication of TW497368B publication Critical patent/TW497368B/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6336—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6339—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/668—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials
    • H10P14/6681—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si
    • H10P14/6684—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound comprising silicon and oxygen
    • H10P14/6686—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound comprising silicon and oxygen the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/69215—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/6922—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Formation Of Insulating Films (AREA)
  • Chemical Vapour Deposition (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
TW090119559A 2000-09-26 2001-08-09 Method of reducing plasma-induced damage TW497368B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US09/670,483 US6521302B1 (en) 2000-09-26 2000-09-26 Method of reducing plasma-induced damage

Publications (1)

Publication Number Publication Date
TW497368B true TW497368B (en) 2002-08-01

Family

ID=24690572

Family Applications (1)

Application Number Title Priority Date Filing Date
TW090119559A TW497368B (en) 2000-09-26 2001-08-09 Method of reducing plasma-induced damage

Country Status (5)

Country Link
US (1) US6521302B1 (https=)
EP (1) EP1191569A3 (https=)
JP (2) JP5084080B2 (https=)
KR (1) KR100885350B1 (https=)
TW (1) TW497368B (https=)

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US20040010319A1 (en) * 1998-04-14 2004-01-15 Osteoimplant Technology Inc. Intrinsic stability in a total hip stem
US6911403B2 (en) 2003-08-20 2005-06-28 Applied Materials, Inc. Methods of reducing plasma-induced damage for advanced plasma CVD dielectrics
US20050106888A1 (en) * 2003-11-14 2005-05-19 Taiwan Semiconductor Manufacturing Co. Method of in-situ damage removal - post O2 dry process
US7030041B2 (en) * 2004-03-15 2006-04-18 Applied Materials Inc. Adhesion improvement for low k dielectrics
US7115508B2 (en) * 2004-04-02 2006-10-03 Applied-Materials, Inc. Oxide-like seasoning for dielectric low k films
US7112541B2 (en) * 2004-05-06 2006-09-26 Applied Materials, Inc. In-situ oxide capping after CVD low k deposition
US7404986B2 (en) * 2004-05-07 2008-07-29 United Technologies Corporation Multi-component deposition
US7094442B2 (en) * 2004-07-13 2006-08-22 Applied Materials, Inc. Methods for the reduction and elimination of particulate contamination with CVD of amorphous carbon
US20070286965A1 (en) * 2006-06-08 2007-12-13 Martin Jay Seamons Methods for the reduction and elimination of particulate contamination with cvd of amorphous carbon
US7259111B2 (en) * 2005-01-19 2007-08-21 Applied Materials, Inc. Interface engineering to improve adhesion between low k stacks
US7189658B2 (en) * 2005-05-04 2007-03-13 Applied Materials, Inc. Strengthening the interface between dielectric layers and barrier layers with an oxide layer of varying composition profile
US7273823B2 (en) * 2005-06-03 2007-09-25 Applied Materials, Inc. Situ oxide cap layer development
JP4678688B2 (ja) * 2006-02-27 2011-04-27 次世代半導体材料技術研究組合 プラズマ処理終了方法
US20080008842A1 (en) * 2006-07-07 2008-01-10 Applied Materials, Inc. Method for plasma processing
US7297376B1 (en) 2006-07-07 2007-11-20 Applied Materials, Inc. Method to reduce gas-phase reactions in a PECVD process with silicon and organic precursors to deposit defect-free initial layers
US20080254233A1 (en) * 2007-04-10 2008-10-16 Kwangduk Douglas Lee Plasma-induced charge damage control for plasma enhanced chemical vapor deposition processes
US20080302652A1 (en) * 2007-06-06 2008-12-11 Mks Instruments, Inc. Particle Reduction Through Gas and Plasma Source Control
US7951695B2 (en) * 2008-05-22 2011-05-31 Freescale Semiconductor, Inc. Method for reducing plasma discharge damage during processing
US8815329B2 (en) * 2008-12-05 2014-08-26 Advanced Energy Industries, Inc. Delivered energy compensation during plasma processing
KR101049971B1 (ko) * 2010-04-08 2011-07-15 강원대학교산학협력단 살균 및 세정능을 갖춘 대기압 플라즈마 표면처리장치
US8329575B2 (en) * 2010-12-22 2012-12-11 Applied Materials, Inc. Fabrication of through-silicon vias on silicon wafers
US20140049162A1 (en) * 2012-08-15 2014-02-20 George Thomas Defect reduction in plasma processing
US20140367043A1 (en) * 2013-06-17 2014-12-18 Applied Materials, Inc. Method for fast and repeatable plasma ignition and tuning in plasma chambers
US10199388B2 (en) * 2015-08-27 2019-02-05 Applied Mateerials, Inc. VNAND tensile thick TEOS oxide
JP7544726B2 (ja) * 2019-02-13 2024-09-03 ラム リサーチ コーポレーション 半導体処理における異常プラズマ事象の検出および軽減
WO2021101993A1 (en) 2019-11-21 2021-05-27 Lam Research Corporation Detection and location of anomalous plasma events in fabrication chambers

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JPS63102318A (ja) * 1986-10-20 1988-05-07 Tokyo Electron Ltd プラズマエツチング方法
JP2890494B2 (ja) * 1989-07-11 1999-05-17 セイコーエプソン株式会社 プラズマ薄膜の製造方法
JP3118913B2 (ja) * 1991-10-30 2000-12-18 ソニー株式会社 半導体装置の製造方法
JP3211391B2 (ja) * 1992-07-29 2001-09-25 松下電器産業株式会社 ドライエッチング方法
US5271972A (en) * 1992-08-17 1993-12-21 Applied Materials, Inc. Method for depositing ozone/TEOS silicon oxide films of reduced surface sensitivity
JPH06326058A (ja) * 1993-03-16 1994-11-25 Sanyo Electric Co Ltd 半導体基板の処理方法
JPH1027792A (ja) * 1996-07-11 1998-01-27 Miyazaki Oki Electric Co Ltd 半導体装置の製造方法
US6054379A (en) 1998-02-11 2000-04-25 Applied Materials, Inc. Method of depositing a low k dielectric with organo silane
US6159871A (en) 1998-05-29 2000-12-12 Dow Corning Corporation Method for producing hydrogenated silicon oxycarbide films having low dielectric constant
JP3235095B2 (ja) * 1998-12-25 2001-12-04 日本電気株式会社 シリコン酸化膜の成膜方法

Also Published As

Publication number Publication date
KR20020024788A (ko) 2002-04-01
KR100885350B1 (ko) 2009-02-26
JP2002176047A (ja) 2002-06-21
EP1191569A2 (en) 2002-03-27
US6521302B1 (en) 2003-02-18
JP5501413B2 (ja) 2014-05-21
JP5084080B2 (ja) 2012-11-28
EP1191569A3 (en) 2005-02-09
JP2013038419A (ja) 2013-02-21

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