TW497332B - High voltage switch circuit and semiconductor memory device provided with the same - Google Patents

High voltage switch circuit and semiconductor memory device provided with the same Download PDF

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Publication number
TW497332B
TW497332B TW090100497A TW90100497A TW497332B TW 497332 B TW497332 B TW 497332B TW 090100497 A TW090100497 A TW 090100497A TW 90100497 A TW90100497 A TW 90100497A TW 497332 B TW497332 B TW 497332B
Authority
TW
Taiwan
Prior art keywords
voltage
transistor
circuit
node
signal
Prior art date
Application number
TW090100497A
Other languages
English (en)
Chinese (zh)
Inventor
Shinji Kawai
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Application granted granted Critical
Publication of TW497332B publication Critical patent/TW497332B/zh

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/145—Applications of charge pumps; Boosted voltage circuits; Clamp circuits therefor
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/30—Power supply circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/08—Word line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, for word lines

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Read Only Memory (AREA)
  • Electronic Switches (AREA)
  • Logic Circuits (AREA)
  • Dram (AREA)
TW090100497A 2000-05-12 2001-01-10 High voltage switch circuit and semiconductor memory device provided with the same TW497332B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000140357A JP2001319490A (ja) 2000-05-12 2000-05-12 高電圧スイッチ回路および当該高電圧スイッチ回路を備える半導体記憶装置

Publications (1)

Publication Number Publication Date
TW497332B true TW497332B (en) 2002-08-01

Family

ID=18647667

Family Applications (1)

Application Number Title Priority Date Filing Date
TW090100497A TW497332B (en) 2000-05-12 2001-01-10 High voltage switch circuit and semiconductor memory device provided with the same

Country Status (4)

Country Link
US (1) US6411554B1 (enExample)
JP (1) JP2001319490A (enExample)
KR (1) KR100386188B1 (enExample)
TW (1) TW497332B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI615846B (zh) * 2014-04-17 2018-02-21 愛思開海力士有限公司 高電壓開關電路及包括其之非揮發性記憶體

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JP3603769B2 (ja) * 2000-09-06 2004-12-22 セイコーエプソン株式会社 レベルシフト回路及びそれを用いた半導体装置
AU2003277555A1 (en) * 2002-11-06 2004-06-07 Nec Corporation Level conversion circuit
US7006389B2 (en) * 2003-12-12 2006-02-28 Micron Technology, Inc. Voltage translator for multiple voltage operations
US7061298B2 (en) * 2003-08-22 2006-06-13 Idaho Research Foundation, Inc. High voltage to low voltage level shifter
US7151400B2 (en) * 2004-07-13 2006-12-19 Taiwan Semiconductor Manufacturing Company, Ltd. Boost-biased level shifter
KR100699852B1 (ko) * 2005-07-14 2007-03-27 삼성전자주식회사 Ｈｐｍｏｓ를 이용한 불휘발성 메모리 장치의 워드라인디코더
JP4199765B2 (ja) * 2005-12-02 2008-12-17 マイクロン テクノロジー，インコーポレイテッド 高電圧スイッチング回路
US7599231B2 (en) * 2006-10-11 2009-10-06 Atmel Corporation Adaptive regulator for idle state in a charge pump circuit of a memory device
US7605633B2 (en) * 2007-03-20 2009-10-20 Kabushiki Kaisha Toshiba Level shift circuit which improved the blake down voltage
GB2467183B (en) * 2009-01-27 2013-08-07 Innovision Res & Tech Plc Apparatus for use in near field rf communicators
JP2009163874A (ja) * 2009-04-20 2009-07-23 Renesas Technology Corp 半導体装置
JP5045730B2 (ja) * 2009-11-02 2012-10-10 富士通セミコンダクター株式会社 レベル変換回路
JP5686701B2 (ja) * 2011-08-11 2015-03-18 新日本無線株式会社 正負電圧論理出力回路およびこれを用いた高周波スイッチ回路
US20130328851A1 (en) * 2012-06-08 2013-12-12 Apple Inc. Ground noise propagation reduction for an electronic device
KR102072767B1 (ko) 2013-11-21 2020-02-03 삼성전자주식회사 고전압 스위치 및 그것을 포함하는 불휘발성 메모리 장치
US9991225B2 (en) 2015-06-23 2018-06-05 Texas Instruments Incorporated High voltage device with multi-electrode control
US10033361B2 (en) * 2015-12-28 2018-07-24 Semiconductor Energy Laboratory Co., Ltd. Level-shift circuit, driver IC, and electronic device
WO2023080433A1 (ko) * 2021-11-04 2023-05-11 서울대학교산학협력단 커런트 미러 회로 및 이를 포함하는 뉴로모픽 장치
EP4496222B1 (en) * 2023-07-21 2025-12-31 STMicroelectronics International N.V. HIGH VOLTAGE SWITCHING CIRCUIT AND CORRESPONDING OPERATING METHOD

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5243236A (en) * 1991-12-31 1993-09-07 Intel Corporation High voltage CMOS switch with protection against diffusion to well reverse junction breakdown
FR2693327B1 (fr) * 1992-07-06 1994-08-26 Sgs Thomson Microelectronics Circuit de commutation de haute tension.
US5399928A (en) * 1993-05-28 1995-03-21 Macronix International Co., Ltd. Negative voltage generator for flash EPROM design
US5619150A (en) * 1995-07-07 1997-04-08 Micron Quantum Devices, Inc. Switch for minimizing transistor exposure to high voltage
JP3662326B2 (ja) * 1996-01-09 2005-06-22 株式会社ルネサステクノロジ レベル変換回路
JPH09261037A (ja) 1996-03-18 1997-10-03 Fujitsu Ltd 半導体論理回路
US5736869A (en) * 1996-05-16 1998-04-07 Lsi Logic Corporation Output driver with level shifting and voltage protection

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI615846B (zh) * 2014-04-17 2018-02-21 愛思開海力士有限公司 高電壓開關電路及包括其之非揮發性記憶體

Also Published As

Publication number Publication date
KR20010104198A (ko) 2001-11-24
US6411554B1 (en) 2002-06-25
JP2001319490A (ja) 2001-11-16
KR100386188B1 (ko) 2003-06-02

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GD4A Issue of patent certificate for granted invention patent
MM4A Annulment or lapse of patent due to non-payment of fees