GB2467183B - Apparatus for use in near field rf communicators - Google Patents

Apparatus for use in near field rf communicators

Info

Publication number
GB2467183B
GB2467183B GB0901313.7A GB0901313A GB2467183B GB 2467183 B GB2467183 B GB 2467183B GB 0901313 A GB0901313 A GB 0901313A GB 2467183 B GB2467183 B GB 2467183B
Authority
GB
United Kingdom
Prior art keywords
communicators
near field
field
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
GB0901313.7A
Other versions
GB2467183A (en
GB0901313D0 (en
Inventor
Alastair Leffley
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Broadcom Innovision Ltd
Original Assignee
Innovision Research and Technology PLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Innovision Research and Technology PLC filed Critical Innovision Research and Technology PLC
Priority to GB0901313.7A priority Critical patent/GB2467183B/en
Publication of GB0901313D0 publication Critical patent/GB0901313D0/en
Priority to PCT/GB2010/050106 priority patent/WO2010086642A2/en
Publication of GB2467183A publication Critical patent/GB2467183A/en
Application granted granted Critical
Publication of GB2467183B publication Critical patent/GB2467183B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/12—Programming voltage switching circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/10—Modifications for increasing the maximum permissible switched voltage
    • H03K17/102—Modifications for increasing the maximum permissible switched voltage in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/0175—Coupling arrangements; Interface arrangements
    • H03K19/0185—Coupling arrangements; Interface arrangements using field effect transistors only
    • H03K19/018507—Interface arrangements
    • H03K19/018521—Interface arrangements of complementary type, e.g. CMOS
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/0175—Coupling arrangements; Interface arrangements
    • H03K19/0185—Coupling arrangements; Interface arrangements using field effect transistors only
    • H03K19/018507—Interface arrangements
    • H03K19/01855—Interface arrangements synchronous, i.e. using clock signals
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
    • H03K3/356—Bistable circuits
    • H03K3/356104—Bistable circuits using complementary field-effect transistors
    • H03K3/356113—Bistable circuits using complementary field-effect transistors using additional transistors in the input circuit

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Control Of Indicators Other Than Cathode Ray Tubes (AREA)
  • Logic Circuits (AREA)
GB0901313.7A 2009-01-27 2009-01-27 Apparatus for use in near field rf communicators Active GB2467183B (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
GB0901313.7A GB2467183B (en) 2009-01-27 2009-01-27 Apparatus for use in near field rf communicators
PCT/GB2010/050106 WO2010086642A2 (en) 2009-01-27 2010-01-25 Apparatus for use in near field rf communicators

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB0901313.7A GB2467183B (en) 2009-01-27 2009-01-27 Apparatus for use in near field rf communicators

Publications (3)

Publication Number Publication Date
GB0901313D0 GB0901313D0 (en) 2009-03-11
GB2467183A GB2467183A (en) 2010-07-28
GB2467183B true GB2467183B (en) 2013-08-07

Family

ID=40469143

Family Applications (1)

Application Number Title Priority Date Filing Date
GB0901313.7A Active GB2467183B (en) 2009-01-27 2009-01-27 Apparatus for use in near field rf communicators

Country Status (2)

Country Link
GB (1) GB2467183B (en)
WO (1) WO2010086642A2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104410403B (en) * 2014-12-09 2017-10-03 复旦大学 Twin voltage sub-threshold level converter

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6411554B1 (en) * 2000-05-12 2002-06-25 Mitsubishi Denki Kabushiki Kaisha High voltage switch circuit having transistors and semiconductor memory device provided with the same
US6646918B2 (en) * 2001-01-24 2003-11-11 Nec Electronics Corporation Semiconductor level shifter circuit

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3676018B2 (en) * 1997-02-25 2005-07-27 シャープ株式会社 Voltage level shifter circuit
JP3138680B2 (en) * 1998-03-13 2001-02-26 日本電気アイシーマイコンシステム株式会社 Output buffer control circuit
JP4421365B2 (en) * 2004-04-21 2010-02-24 富士通マイクロエレクトロニクス株式会社 Level conversion circuit

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6411554B1 (en) * 2000-05-12 2002-06-25 Mitsubishi Denki Kabushiki Kaisha High voltage switch circuit having transistors and semiconductor memory device provided with the same
US6646918B2 (en) * 2001-01-24 2003-11-11 Nec Electronics Corporation Semiconductor level shifter circuit

Also Published As

Publication number Publication date
GB2467183A (en) 2010-07-28
WO2010086642A2 (en) 2010-08-05
GB0901313D0 (en) 2009-03-11
WO2010086642A3 (en) 2010-11-18

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Legal Events

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732E Amendments to the register in respect of changes of name or changes affecting rights (sect. 32/1977)

Free format text: REGISTERED BETWEEN 20171005 AND 20171011