WO2010086642A3 - Apparatus for use in near field rf communicators - Google Patents

Apparatus for use in near field rf communicators Download PDF

Info

Publication number
WO2010086642A3
WO2010086642A3 PCT/GB2010/050106 GB2010050106W WO2010086642A3 WO 2010086642 A3 WO2010086642 A3 WO 2010086642A3 GB 2010050106 W GB2010050106 W GB 2010050106W WO 2010086642 A3 WO2010086642 A3 WO 2010086642A3
Authority
WO
WIPO (PCT)
Prior art keywords
voltage
transitions
voltage level
programming
communicators
Prior art date
Application number
PCT/GB2010/050106
Other languages
French (fr)
Other versions
WO2010086642A2 (en
Inventor
Alastair Leffley
Original Assignee
Innovision Research & Technology Plc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Innovision Research & Technology Plc filed Critical Innovision Research & Technology Plc
Publication of WO2010086642A2 publication Critical patent/WO2010086642A2/en
Publication of WO2010086642A3 publication Critical patent/WO2010086642A3/en

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/12—Programming voltage switching circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/10—Modifications for increasing the maximum permissible switched voltage
    • H03K17/102—Modifications for increasing the maximum permissible switched voltage in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/0175—Coupling arrangements; Interface arrangements
    • H03K19/0185—Coupling arrangements; Interface arrangements using field effect transistors only
    • H03K19/018507—Interface arrangements
    • H03K19/018521—Interface arrangements of complementary type, e.g. CMOS
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/0175—Coupling arrangements; Interface arrangements
    • H03K19/0185—Coupling arrangements; Interface arrangements using field effect transistors only
    • H03K19/018507—Interface arrangements
    • H03K19/01855—Interface arrangements synchronous, i.e. using clock signals
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
    • H03K3/356—Bistable circuits
    • H03K3/356104—Bistable circuits using complementary field-effect transistors
    • H03K3/356113—Bistable circuits using complementary field-effect transistors using additional transistors in the input circuit

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Control Of Indicators Other Than Cathode Ray Tubes (AREA)
  • Logic Circuits (AREA)

Abstract

A voltage level shifter has a supply voltage coupling to couple to a supply voltage having a reset voltage level and a programming voltage level, a control voltage input to couple to a control voltage having first and second voltage levels (a and ã), and an output. The relative timing of transitions between first and second control voltage levels (a and ã) and transitions between the reset and programming voltage levels is controlled so that the voltage level shifter is not exposed to the programming voltage level during control voltage transitions.
PCT/GB2010/050106 2009-01-27 2010-01-25 Apparatus for use in near field rf communicators WO2010086642A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB0901313.7A GB2467183B (en) 2009-01-27 2009-01-27 Apparatus for use in near field rf communicators
GB0901313.7 2009-01-27

Publications (2)

Publication Number Publication Date
WO2010086642A2 WO2010086642A2 (en) 2010-08-05
WO2010086642A3 true WO2010086642A3 (en) 2010-11-18

Family

ID=40469143

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/GB2010/050106 WO2010086642A2 (en) 2009-01-27 2010-01-25 Apparatus for use in near field rf communicators

Country Status (2)

Country Link
GB (1) GB2467183B (en)
WO (1) WO2010086642A2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104410403B (en) * 2014-12-09 2017-10-03 复旦大学 Twin voltage sub-threshold level converter

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6133756A (en) * 1998-03-13 2000-10-17 Nec Corporation Output buffer control circuit
US6433582B2 (en) * 1997-02-25 2002-08-13 Sharp Kabushiki Kaisha Voltage level shifter circuit
US20050237099A1 (en) * 2004-04-21 2005-10-27 Fujitsu Limited Level conversion circuit

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001319490A (en) * 2000-05-12 2001-11-16 Mitsubishi Electric Corp High voltage switch circuit, and semiconductor memory provided with high voltage switch circuit
JP3548535B2 (en) * 2001-01-24 2004-07-28 Ｎｅｃエレクトロニクス株式会社 Semiconductor circuit

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6433582B2 (en) * 1997-02-25 2002-08-13 Sharp Kabushiki Kaisha Voltage level shifter circuit
US6133756A (en) * 1998-03-13 2000-10-17 Nec Corporation Output buffer control circuit
US20050237099A1 (en) * 2004-04-21 2005-10-27 Fujitsu Limited Level conversion circuit

Also Published As

Publication number Publication date
GB2467183A (en) 2010-07-28
GB2467183B (en) 2013-08-07
WO2010086642A2 (en) 2010-08-05
GB0901313D0 (en) 2009-03-11

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