TW497257B - Nonvolatile memory device and manufacturing method therefor - Google Patents

Nonvolatile memory device and manufacturing method therefor Download PDF

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Publication number
TW497257B
TW497257B TW088111380A TW88111380A TW497257B TW 497257 B TW497257 B TW 497257B TW 088111380 A TW088111380 A TW 088111380A TW 88111380 A TW88111380 A TW 88111380A TW 497257 B TW497257 B TW 497257B
Authority
TW
Taiwan
Prior art keywords
source
line
region
plug
contact hole
Prior art date
Application number
TW088111380A
Other languages
English (en)
Chinese (zh)
Inventor
Jong-Han Kim
Jeong-Hyuk Choi
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Application granted granted Critical
Publication of TW497257B publication Critical patent/TW497257B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region

Landscapes

  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
TW088111380A 1998-07-11 1999-07-05 Nonvolatile memory device and manufacturing method therefor TW497257B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019980028036A KR100297938B1 (ko) 1998-07-11 1998-07-11 비휘발성메모리장치및그제조방법

Publications (1)

Publication Number Publication Date
TW497257B true TW497257B (en) 2002-08-01

Family

ID=19543881

Family Applications (1)

Application Number Title Priority Date Filing Date
TW088111380A TW497257B (en) 1998-07-11 1999-07-05 Nonvolatile memory device and manufacturing method therefor

Country Status (3)

Country Link
JP (1) JP2000040755A (ko)
KR (1) KR100297938B1 (ko)
TW (1) TW497257B (ko)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100357185B1 (ko) * 2000-02-03 2002-10-19 주식회사 하이닉스반도체 비휘발성 메모리소자 및 그의 제조방법
US6770923B2 (en) * 2001-03-20 2004-08-03 Freescale Semiconductor, Inc. High K dielectric film
KR100763100B1 (ko) * 2001-12-15 2007-10-04 주식회사 하이닉스반도체 플래쉬 소자의 소오스 라인 형성 방법
KR100604875B1 (ko) * 2004-06-29 2006-07-31 삼성전자주식회사 스트랩 영역을 갖는 비휘발성 반도체 메모리 소자 및 그제조방법
JP5041394B2 (ja) * 2006-01-16 2012-10-03 ルネサスエレクトロニクス株式会社 半導体記憶装置
KR100751680B1 (ko) * 2006-09-29 2007-08-23 주식회사 하이닉스반도체 플래시 메모리 소자
JP5175889B2 (ja) * 2010-03-26 2013-04-03 株式会社東芝 不揮発性半導体記憶装置およびその製造方法

Also Published As

Publication number Publication date
KR100297938B1 (ko) 2001-10-26
JP2000040755A (ja) 2000-02-08
KR20000008293A (ko) 2000-02-07

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