TW492172B - Method for making semiconductor device - Google Patents

Method for making semiconductor device Download PDF

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Publication number
TW492172B
TW492172B TW090109250A TW90109250A TW492172B TW 492172 B TW492172 B TW 492172B TW 090109250 A TW090109250 A TW 090109250A TW 90109250 A TW90109250 A TW 90109250A TW 492172 B TW492172 B TW 492172B
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TW
Taiwan
Prior art keywords
semiconductor device
semiconductor
substrate
manufacturing
adhesive sheet
Prior art date
Application number
TW090109250A
Other languages
English (en)
Inventor
Koji Iketani
Original Assignee
Sanyo Electric Co
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Filing date
Publication date
Application filed by Sanyo Electric Co filed Critical Sanyo Electric Co
Application granted granted Critical
Publication of TW492172B publication Critical patent/TW492172B/zh

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    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901—Structure
    • H01L2924/1904—Component type
    • H01L2924/19043—Component type being a resistor

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Description

^172 ^172 經濟部智慧財產局員工消費合作社印製 A7 —_____B7 ____ — 五、發明說明（1 ) [發明所屬之技術領域] 本發明係有關一種半導體裝置之製造方法，尤指以減 夕¥線、縮小封裝體之外形、減少其安裝面積，可使成本 大幅度降低之半導體裝置之製造方法。 [習知之技術] 於半導體裝置之製造中，將經由晶圓切割（dicing)分離 之半導體晶片，固定於引線框架上，由於模具藉由以模具 之樹知之/主入之傳送模塑法（trasfer molding)，密封固定於 引線框架上之半導體晶片後，進行將被密封之半導體晶片 分離到各個半導體裝置之工序。該引線框架是使用長方型 或疋環狀之框架，只要進行一次的封裝工程，可同時封裝 數個半導體裝置。 第15圖係表示形成於晶圓上之半導體晶片的檢查工 序。在此工序中，判定形成於晶圓上每一個半導體晶片之 良與不良。首先，確認晶圓之位置，然後探針14會依晶片 尺寸被分送，與各半導體晶片丨之電極墊接觸。於此狀態 中’將先前已被程式化之輸入信號波形從輸入電極塾輸 入’ 一定之信號波形會從輸出端子輸出，測試器會讀出此 信號波形，判定其良與不良。於此，被判定為不良之半導 體晶片1，會被加標記（marking)在半導體晶片1固定於引 線框架之時，辨視用之照像機會辨視被標記之不良半導體 晶片1，並將其挑除。 第16圖表示傳送模塑工序。於傳送模塑工序中，藉由 晶粒結合及引線搭接，將固定有半導體晶片1之引線框架 本紙張尺度適用中國國家標準（CNS)A4規格⑵Q χ 297公爱）' ----------- 1 312545 -----------I 裝---- (請先閱讀背面之注意事項再填寫本頁) 訂---- Φ 492172 A7 ____BZ__ 五、發明說明（2 ) 2’設置於以上下模具3A、3B所形成之模槽*之内部，於 模槽4内注人環氧樹脂，進行半導體晶片丨之封裝。於施 (請先閱讀背面之注意事項再填寫本頁) 以此傳送模塑工序後，在每一個半導俨 夂作耳干令體日日片1切斷引線框 架2以製造個別之半導體裝置。（例 、彳即㈡本特開平05-1294 73 號）。 此時，如第17圖所示，在模具35的表面上，設置有 多數個模槽4a至4f，及用以注入樹脂的樹脂源$和流道 (runner)6 ’和用以由流道6向各模槽4a至4f注入樹脂之 鬧門7。這些全部為設於模具3B表面的溝。若為長方=之 引線框架，則在一個引線框架上搭載例如1〇個半導體晶片 1，且對應此標準框，設置10個模槽4、1〇個閘門7及ι 條流道6。然後，於模具3表面設置例如2〇個引線框架分 的模槽4。 經濟部智慧財產局員工消費合作社印製 第1 8圖係表示由前述傳送模塑法所製成之半導體穿 置。以晶體管等元件所形成之半導體晶片1係以銲料等之 堪材9,固定安裝於引線框架之島部（island)8上，半導體 曰曰片1之電極塾及導線1 〇係以鋼線1 1相接，半導體晶片 1之周邊部分係由與前述模槽之形狀一致的樹脂12所覆 蓋，而在樹脂12之外部，導出導線端子1〇之前端部分。 繼之’形成於晶圓上之半導體晶片1係以前述之製造 方法’形成個別之半導體裝置，此等半導體裝置之電氣特 性（hfe等級別）係以測試器加以測定判別。此時，如第j 5 圖之說明，在晶圓檢查工序中之晶圓狀態下，對照未正確 測定之項目或是製品規袼，以更嚴密之測定項目，來進行 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 2 312545 u 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明說明（3 檢查。然後，於此半導體裝置之電氣性特性的測定，判定 工序中所有的半導體皆會朝向一定之方向，半導體裝置會 逐一被檢查。經此工序後，被判定為良品之半導體裝置， 經捲帶（taping)後出貨。 [發明所欲解決的問題] 由以往之傳送模塑法製造個別的半導體裝置之方法， 在其傳送模塑後，由於在各個半導體裝置分離且分散，因 此使各半導體裝置全部朝一定之方向，以個別進行電氣特 性（hfe等級別）之測定。然後，依判定之結果，半導體裝置 會依其特性被分類’然後再依其類別實施捲帶，因此，會 產生費時與費工序之缺點。 此外，依半導體裝置之電氣特性的測定，判定工序所 被判定電氣特性之半導體裝置，如未一次依阶等級加以 ，分而分接時，就必須準備複數個捲帶線。因此，不能簡 單地形成捲▼裝置，不僅產生佔用較多作業空間的缺點， 也產生以多等級判定優良半導體裝置有所限度的缺點。 [解決問題之方法] 本發明係鑑於前述各項缺失而開發者，其特徵在：將 半導體晶片固定在具有複數個搭载部之基板的各搭載部， 以共同之樹脂層I蓋固定於前述各搭載部上之各前述半導 體晶片後，使前述樹脂層抵接且將前述基板貼在黏著薄 板，由於是在貼附於前述黏著薄板之狀態下進行切割及測 定，所以不會在個別之半導體裝置分離，可在以黏著薄板 一體支持的狀態下進行測定。 ‘紙張尺度適用中國國家標準（CNS)A4規格⑵G X 297公爱）— 312545 I n ϋ i-ϋ 1_1 ϋ ·ϋ ϋ a— i ϋ I · ·ϋ H 1 ·ϋ ί an .1 、 n ϋ ϋ ϋ H (請先閱讀背面之注意事項再填寫本頁) 4 492172 A7 經濟部智慧財產局員工消費合作社印製 五、發明說明（4 ) 又，本發明之特徵在··將半導體晶片固定在具有複數 個搭載部之基板的各搭載部上，以共同之樹月旨層覆蓋固定 於前述各搭載部上之各前述半導體晶片後，使前述樹脂層 抵接且將前職板貼在黏㈣板，由於是在貼附於前述^ 著薄板之狀態下進行切割及測定，且將貼附於前述黏著薄 板之半導體裝置，直接收容於輸送帶(career tape)令，所以 到收容於輸送帶為止，不會在個別之半導體裝置分離，可 在以黏著薄板一體支持之狀態下進行作業。 再者，其特徵在：不僅可判別前述各個半導體裝置之 電氣特性之優良與否，而且可以判斷其良品之等級。此外， 形成於前述基板上之全部的半導體以，制形成於前述 基板之位置’電氣特性之等級等作為資料而加以儲存且選 擇性收集於捲帶時所需電氣性特性之半導體裝置，並加以 捲帶。 [發明之實施形態] 以下詳細說明本發明之實施形態。 本發明之第1工序係如第！圖至第3圖所示，準備具 有複數個搭載部之基板。 ^ 首先，如第丨圖所示，準備對應於一個半導體裝置之 搭載部20，以及複數個例如將100個個體以i〇rx ι〇列 配置之大型基板21。此基板21是以陶瓷或是玻璃環氧等 製成之絕緣基板，將基板一片或是數片相疊合，其合計厚 度為200至2150#m時，其板厚即可維持於製造工序中2 機械性強度。 ;裝 (請先閱讀背面之注意事項再填寫本頁) • n n 1 ----訂---- 羲· 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公爱） 4 312545 濟 部 智 慧 財 產 局 消 費 合 5 五、發明說明（5 ) 基板21上之各搭載部20的表面上’形成有以鎢等金 屬焊油之印刷及金的電解鍍金所成之導電圖案。另外，基 板21之背面側’形成有作為外部連接電極用之電極圖案: 第2圖（A)為形成於基板21表面之導電圖案的俯視 圖’第2圖（B)為基板21的剖視圖。 以虛線所圍之各搭載部2G，例如呈長邊i Gmmx短邊 〇.8_之矩形，將此矩形以20之間隔縱橫配 置。前述之間隔係後述工序中之切割線24。導電圖案在各 ，20内形成島㈣及導線部％，此等圖案在各搭載 :20内皆為同一形狀。島部25為搭載半導體晶片之處， ，電部26為半導體晶片之電極墊與線路相連接之處。從島 部25係有兩條第i連結部27以連續之圖案而延長。此線 之寬度比島部25窄，例如以〇.lmn之寬度而延長。第} 連結部27係越過切割線24而與相鄰之搭載❹的導線部 26連結。從導線部26係有各個第2連結部28在盥第^連 =平行之方向而延伸，越過切割線24與所相鄰之搭 =2〇之導線部24連結。第2連結部以更與圍繞於搭載 # 20群周圍之共通連結部29連結。藉由第^第2連结 部27、28之延伸，可共通電性連接各搭载部2〇之島部μ 此是為了於進行金等電解鍍金時，作為共通 參照第2圖(B)，絕緣基板21之各個搭載部2〇上設女 ==貫穿孔3°之内部埋設有嫣等導電材料。而且 _對應各貫穿孔30 ’於其背面側形成外部電極3卜 1本紙張尺度適財關家^^NS)A4規格（21G χ 297公髮^- 312545
I /2 A7 經濟部智慧財產局員工消費合作社印製 五、發明說明（6 ) 第3圖為從背面側觀察基板2 1表示外部電極3丨a至 31d圖案的俯視圖。此等外部電極31a、31b ' 3le、3 $ 從搭栽部20之邊緣後退0 05至0.1mm左右，且各 立之w电 且以各自獨 立圖案而形成。雖然如此，藉由各貫穿孔30與共通連結 ^9作電性連結。藉此，以導電圖案作為_側電極之電二 鍍金法，可於全部的導電圖案上，形成鍛金層。另外，也 ^以線寬較窄之及第2的連結部27、28橫斷切割線 定半=9:Γ2工序係如第4圖所示，於各搭載部上固 牛導體日日片，並進行引線搭接。 7成鍍金之基板21的每—搭載部2G上，對半導體 日日母、進仃晶粒黏接及引線搭接。半導體晶片33係藉由 銀焊油等接黏劑固定於島部2 ; 導體…… 島丨25之表面，且以鋼線34與半 =…電極塾與導線部3一相連接。半導體 日曰片33疋形成有兩極晶體管、動力Μ_Ετ等3端子之 =:。搭載兩極性元件之情況下，連接於島部Μ之外 之外部電二/b'為集電極引線’連接續於各導線部26 之外邛電極31c、31d是為基礎發射電極。 声霜本發明之第3工序係如第5圖所示，以樹脂 =覆盍基板的上方，將固定於各搭载部之各個半導體晶 片’也以共同之樹脂層覆蓋。 如第5圖⑷所示，從移送於基板21±方之配料機 (disPenser)(未圖示），滴下預 / 枓機 m U m 、 之衣乳糸液體樹脂（結合 的何體晶片 Μ氏張尺度朝t _家鮮（^_4祕 6 312545 f靖先閱讀背面<注意事項再填寫本頁} •裝 ϋ I ϋ 一 θ、I ·ϋ ϋ ·ϋ 羲. 7 A7 __B7 五、發明說明（7 Ϊ ι::主基板21上搭載有100個半導體晶片33的情況 體樹r η 晶片33將會全部—起被覆蓋。前述之液 為使用CV576AN(松下電工製)。所滴下之液 =狀由於其黏黏性較高，具有表面張力之故，其表面 繼之，如第5圖(B)所示，將所滴下之樹脂層，施以 100至200度之數小時的熱處理（硬化），使之硬化後，藉由 磨削其彎曲面’使樹脂層35之表面加工成平坦面。磨削是 使用：割裝置’藉由切割板36將樹脂層35表面以高出基 板-定高度的同一之高度加以磨削。在此工序中，將樹脂 層35之膜厚成形為〇3至i 〇mm。平坦面係在將位於至少 最外侧之半導體晶片33分離成個別半導體裝置時，擴張至 其端部以構成規袼化之封裝尺寸樹脂外形。前述之切割板 係準備各種之厚度’而使用較厚之板，經數次反覆之切削， 使全體形成為平坦面。 另外’於硬化所滴下之樹脂層35之前，將平坦之成形 構件推壓於樹脂層3 5之表面，以形成平坦且水平之面，然 後亦可考慮使之硬化之方法。 繼之’本發明之第4工序係如第6圖所示，使樹脂層 35抵接且將基板21貼在黏著薄板5〇。 如第6圖（A)所示，將基板21翻轉，於樹脂層35之表 面上貼附黏著薄板5〇(例如，商品名稱：UV薄板，RINTEC 公司製造）。因在先前之工序_，施以加工使樹脂層之 表面平坦，且相對於基板2 1表面呈水平之面，所以即使貼 ______ ___ 本紙張尺度適用中國國家標準（CNS)A4規格（21〇 X 297公釐） 312545 裝--------訂------ (請先閱讀背面之注意事項再填寫本頁) Φ 492172 A7 ___B7 五、發明說明（8 於樹脂層35側，基板21也不會傾 之精度。 找斜’可維持其水平垂直 如第6圖（B)所示，於不銹鋼 μ (請先閱讀背面之注咅？事項再填寫本頁) 附黏著薄板50之月邊 ,. %狀金屬框51上貼 <周邊，而在黏著薄柘 設有間隔之ό個基板21。 之中央部分貼有 繼之，本發明之第5工序係如第 背面，在每個搭截邻.^ ^ . 圖所不，從基板之 你m部、切割基板與榭 半導體裝置。 曰曰，而为離在各個 如第7圖所示，在每個搭載部 n A八Μ 4 b π 2υ切斷基板及樹脂層 巧板36%由Λ導體裝置。切斷時係使用切割裝置之切 21 ml石著切割線24同時切割樹脂層35及基板 21，形成在每-個搭載部2G所分割之半導 經濟部智慧財產局員工消費合作社印製 工序中，上述切割板36係在到達切割薄板5。之表二 割，罙度切斷。此時，以切割裝置侧能自動認知從基板21 之背面侧也可觀測之對準記號（例如，形成於基板21周邊 部分之貫穿孔或是鍍金層之一部分），以此為位置基準進行 切割。另外’將電極圖案31a、31b、3U、3id或是島部 25,設計成不會與切割板36接觸之模式。這是由於鍍金層 之切斷性較差，因此以防止產生鍍金層之毛邊為目的。^ 此，與切割板36及鍍金層接觸者，只有以電性導通為目的 之第1及第2之連接部27、28。 312545 如第7圖（B)所示，黏著薄板5〇係將周邊貼附於金屬 框51 ’而貼於黏著薄板上之複數個基板21係認識每一條 切割線24 ’再以切割裝置，根據縱方向之各切割線24而 本紙張尺度適用中國國家標準（CNS)A4規格（21〇 X 297公^8 492172 A7 經濟部智慧財產局員工消費合作社印製 五、發明說明（9 ) 分離，然後，使金屬框51旋轉90度，根據模方向之各切 割線24而分離。藉由切割而分離之半導體裝置，仍然是保 持以黏著劑黏於黏著薄板50之狀態，並未個別分散;離'。、 ^繼之，本發明之第6工序為本發明之特徵的工序。如 第8圖（A)、（B)所示，將進行一體支持於黏著薄板⑽之切 割後之各半導體裝置的特性之測試。 如第8圖所示，使探針5〇碰觸將一體支持於黏著薄板 〇之各半導體裝置的基板21露出於背面側的外部電極 至3 1 d，個別測定各半導體裝置之特性參數等，判定其良 與不良及特性別（hfe等級別）。由於基板21 陶^ 或麵環氧等所成之絕緣基板，考量因製造工序中之= 所f成基板大小之參差不齊或是因以黏著薄板5〇支持之 T產生微小之位置偏移情況，檢測出外部電極3 1 a至 位置之偏移，在修正其偏移位置的同時，以探針W對 外部電極31a至31d進行測定。 ^如第8圖（B)所不，金屬框51貼有複數個基板21，由 口在切剎工序之原有狀態，支持個別之半導體裝置，因此 可不需要判別半導體裝置之正反面及外部電極之射極、基 =—集電極集等種類或方向。此測定於每一基板2!上，依 點、/向 行行依序進行，測定至最末端部後回到原 *八再往下行移動。金屬框5 1僅修正一個半導體裝置尺寸 1的位置之同時，往行方向節距式移動，移動至末端時往 方向私動，再往行方向節距式移動，因此相當簡易且能 大量進行。 +四哪標準（CNS)A4規格⑽ 9 312545 ;裝 (請先閱讀背面之注音心事項再填寫本頁) ----訂--- Φ 492172 A7 經濟部智慧財產局員工消費合作社印製 五、發明說明（10 ) 具體而言，如第9圖（A)及（B)所；^ , 乐 ^所不，認知用照像機54 係使半導體裝置40a進入照像機视野53之中心，以進行位 置認知。此時，除複數個半導體装置4〇a，其周邊之半導 體40b、4〇e等也會同時進入照像機視野53内。然而，此 認知用照像機54之鏡頭施有遮罩，使照像機視野'53之中 心只能容有一個半導體裝置的視野。因此，照像機視野Η 可確實捕捉半導體40a，使位置認知之精確度可提升。特 別是’半導體裝置40之尺寸大小’是形成為小而密集所 以位置之認知若稍有偏差’與周邊半導體裝置進行同時測 定時會產生干擾的情況，所以位置認知之精確度非常重 要。 首先’先認知半導體裝置40c之位置，再加以修正位 置後，以探針探測所接鄰之半導體裝置40b、4〇c、4〇d、 4〇e之電極墊，以測定此等半導體裝置之特性。此時，周 邊之半導體裝置4〇b、4〇d、4〇e之位置認知，被視為容許 範圍内之位置偏移而加以省略，只進行特性之測定，所以 有助於生產性之提高。 繼之，於半導體裝置40b、40c、40d、40e之測定中， 進行下一步驟之測定的半導體裝置40a會檢測出之位置認 知有若干之偏移。修正此位置之偏移，對於包括下一個半 導體裝置40a之鄰接其周邊之數個半導體裝置之電極塾， 以探針52探測、測定這些半導體裝置之特性。此作業於i 列反覆進行完畢後，跳過一列，而於下一列進行同樣之作 業。反覆進行此作業，可測定一個基板21上全部半導體裝 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 10 312545 C請先聞讀背面之涑意事頊存填寫本真) 装 訂--- 492172 經 濟 部 智 慧 財 產 局 消 費 合 作 社 印 製 A7 五、發明說明（11 ) 置40之特性。半導體裝置4〇之測定結果儲存於檢測器之 圮憶體中，此測定結果再轉存於磁片裏作為下一工序使 用〇 在此半導體裝置40特性之測定作業中，認知用照像機 54及探針52之位置是被固定的。然後，由於固定半導體 裝置40之金屬,匡51的移動，而進行此作業。於位置認知 作業中’認知i個半導體裝置4〇之電極墊，再從畫像處理 裝置讀取其距目標位置之偏移量，將此偏移部分存入後， 使下一個半導體裝置40移動。 於此，雖說明認知一個半導體裝置之位置，並對鄰接 此=導體裝置之4個半導體裝置進行特性之測定的情況， 但是並不特定於4個，最多可對10個半導體裴置進行特性 測定，而不需位置之認知。 本發明之標位（mopping)工序係與前述半導體裝置⑽ 之特性（hfe等級別）的測定，判定工程同時進行。 如第10圖（A)所示，在金屬框51内6個基板21貼附 於黏著薄板50。然後，！個基板21中，例如有1〇〇個半導 體裝置40,以10rx 10列之縱橫配置，而在標位工序中， 以測試器判定其特性之半導體裝置4〇係位於金屬框Η内 之那一個基板2丨上，然後形成於基板21内之那一個位置 上’其特性應屬於那一個等級，將此作為資料，儲存於測 定器之記憶體_ 〇 另外’於金屬板内，除了 6個基板21貼附黏著薄 板50外，還貼有條碼61。雖準備有複數個金屬框η，伯 本紙張尺度適用中國國家棵準（CNS)A4規袼咖χ 297公^^ --------- 11 3Ϊ2545 丨 II 丨！！ ！ i !丨丨！訂·！—丨 — (請先閲讀背面之注音？事項再填寫本頁) 492172 A7 B7 五、發明說明（12 ) (請先閱讀背面之注意事項再填寫本頁) 以條碼61分別加以區別。然後，將金屬板5 i内之各基板 21標上號碼，例如上段左端之基板21標為1，下段右端之 基板21標為6。對於形成於基板21内之各個半導體裝置 40也同樣標以號碼，例如上段左端之半導體裝置4〇標為 1，下段右端標為1〇〇。而關於半導體裝置40之特性（hfe 等級別），例如，1為良品且70S hfe<l 10之半導體裝置40， 2為良品且ll〇‘hfe<180之半導體裝置40,3為良品且18〇 -hfe<240之半導體裝置40，4為良品且240$hfe<300之 半導體裝置40, 5、6、7為不良品之半導體裝置4〇等之等 級區別。於此，由於對於不良品之半導體裝置4〇，亦可以 多種等級來判定，因此易於追查其形成不良品之原因。 具體而言，如第11圖所示，將前述之資料製成表儲存 於測試器内。然後在捲帶工程中，利用此資料進行作業。 於本發明之第7工序係如第12圖所示，將以黏著薄板 50 —體支持各個半導體裝置40,直接收容於輸送帶41中。 經 濟 部 智 慧 財 產 局 員 工 消 費 合 作 社 印 製 如第12圖（A)所示，以黏著薄板50 一體支持之測定完 畢的各個半導體裝置40,將識別之良品，藉由吸著夾套5 脫離黏著薄板50，收容於輸送帶41之收容孔。 在本發明中，關於將此半導體裝置4〇，直接收容至輸 送帶41之作業，並不是將所有之半導體裝置切以上度特 性（hfe等級別）區別，而是可選擇具有所需要的特性之=導 體裝置並將其收容。如上所述，此方法 乃凌之特徵是利用第11 圖所示之資料，將貼附於黏著薄板50上 工疋牛導體裝置40， 直接收容於輸送帶中。於收容半導體奘署士 本紙張尺度適用中國國家標準（CNS>A4規格（210 X 297公爱) 寸版装置40時，只選擇收 12 312545 492172 A7 五、發明說明（13 ) 集符合顧客需求的特性之半導體裝置4〇加以收集，因此以 一條作業線即可進行捲帶作業，而不會降低其作業效率。 而被判定為不良品之半導體裝置4〇，必然會被留置於黏著 薄板5 0上，因此可直接廢棄。此結果，可省略以往作業中， 處理不良品之多餘作業。 如第12圖（B)所示，金屬框51上貼有複數個基板21， 因為以切割工序之原有狀態，支持個別之半導體裝置4Q， 所以將其收容至輸送帶4丨時，只需將其移動至需要金屬框 5 1之半導體裝置40處即可，以最小限度的移動即可進行， 既間早且可大量進行。 第13圖（A)為本工序所使用之輸送帶之俯視圖、（b) 為AA線剖視圖、（C)為BB線剖視圖。膠帶本體41其膜厚 為〇·5至l.〇mm，寬度為6至15mm，長度為長達數十拉 之帶狀構件，材料為如互楞紙之紙質。膠帶本體Ο中，於 -定之間隙穿設有貫穿孔42。另外，為了將膠帶本體Ο 以一定間隔輸送’而形成有輸送孔43。貫通孔Ο與輸送 孔43是以模具等施以沖裁（Manking)加卫而形成。膠帶本 體4 1之膜厚及貫通孔42 ^ ^ ^ 具大小疋設計為可收容 所應梱包之電子零件4〇。 膠帶本體41之背面側，貼有透明薄膜狀之第一膠帶 =樣穿孔42之底部。膠帶本體41之表㈣，也 同樣貼有透明薄臈狀之第2膠帶45，以塞住 上部。第2膠帶45以側部附近 如垃人钕 强耆冲46與膠帶本體41 ._接〇。弟1膠帶44也與第2膠帶45於间接 W尺度適用中藏標準:CNS)A4規袼⑵。χ2—_ …’的地方與膠 312545 13 4yzi 經濟部智慧財產局員工消費合作社印製 A7
五、發明說明（U f本體41相接合。前述之接合是從薄臈之上部，藉由以具 有對應於接著部46之加熱部之構件，產生熱壓著而進行， 其兩者皆是以引拉薄膜而成為可剝離之狀態的接合。 取後’第14圖表示依前述之卫序所完成之各個半導體 裝置的立體圖。封獎雜夕 裝體之4個側面，是以樹脂層35及基板 21之切斷面所形成’封裝體之上面是以平坦化後之樹腊層 3的表面所形成，封裝體之下面是以絕緣基板μ之背面 側所形成。 此半導體裝置之長χ寬X高例如為1.0mmx〇.6mmx 〇 mm基板21上方覆蓋有〇 5随左右之樹脂層35，以 在封半導體晶片33。半導體晶片33之厚度約為15〇鋒左 右島^ 25與導線部26會從封褒體之端面向後移，所以 -有第1及第2連接部27、28之切斷部分露出於封裝體側 面0 外部電極31a至31d係以〇 2χ 〇.3nm左右之大小配置 於基板21的4個角隅，對於封裝體外形之中心線，以左右 (上下）對稱之圖案而配置。由於此種對稱之配置，很難判 別電極之極性，所以最好於樹脂層35之表面側形成或印刷 凹部，且刻印表示極性之記號。 以鈾述製造方法形成之半導體裝置，因將多數個元件 聚集一起再以樹脂封裝，所以與個別封裝之情況相比，可 減 > 樹脂材料之浪費，有助於材料成本之減低。另外因不 使用引線框架，故與以往之傳送模塑法相比較，可使封裝 體外形大幅縮小。另外，外部連接用之端子形成於基板21 張尺g中國國家標準㈣“規格⑽χ 297公楚） --------1 —|褒-------""訂— (請先閱讀背面之注意事項再填寫本頁) 312545 14 經濟部智慧財產局員工消費合作社印製 4^2172 五、發明說明（I5 ) 之背面’不突出於封裝體之外形，所以也可使裝置之安裝 面積大幅縮小。 另外’於刚述之製造方法，並不是將黏著薄板50貼附 於基板21側’而是貼附於樹脂層35上而進行切割。例如， 於貼附於基板21上之情況下，剝離元件時，黏著薄板50 之黏著劑會附著至電極圖案川至31d的表面。如果在殘 留此種黏著劑之狀態下，將元件投入自動安裝裝置的話， 會有使於安裝時中的電極圖案川至31(1 化之虞。另外’由於電極圖案3…1(1之表面有= 也會產生弊害，根據本發明，藉中將其貼附於樹脂 層3 5可消除前述之弊害。 再者’將黏著薄板5〇貼附於樹脂層 脂層35之表面加工屮u 丁 稽田將树 ,〇91 成水平且平坦面，可維持與將黏著薄板 、附於基板21側時相同的垂直水平精度。 另外，於前述實施例中已說明密封 4個外部電極之例，但例如於密封2個半導體曰 或是密封積體電路之情況，也可以同樣施^曰曰片的情況 [發明之功效] 依據本發明，第1，以樹脂層覆蓋後 貼附於將月邊目上a M '複數個基板 嫌寸於將周邊貼在金屬框之黏著薄板後，從切割 ▼工序，皆以此狀態進行，所以雖然是微小之 但是仍可實現大量生產之半導體裝置的製造方二體構造， 第2，由於在特定測定中，各個半 被記錄於測試器中，所以於收容至輸送帶時^置之資料會 公爱〉 此貝枓 312545 I——------·-裝--------訂---------蠢 (請先閱讀背面之注咅？事項再填寫本頁) 15 492172 經濟部智慧財產局員工消費合作社印製 ⑻為音 (B)為每 A7 五、發明說明Ο6 ) 可以只選擇所需特性之半導妒龄婆 ^ 千導體叙置，並且將其從黏著薄板 上直接收容於輸送帶41中，t τ因此對量產性有相當之助益， 另外，可實現在捲帶工序中 斤〒之機構形成簡單化之半導體奘 置之製造方法。 策 第3，於黏著薄板上形成 主冲半導體裝置之位置， 因其hfe等級與數量都列入資 』貝科管理，所以可實現以最少 之動作即可進行由黏著薄柘μ金4 專坂上直接收各於輸送帶41的作 業之半導體裝置之製造方法。 第4，由於全部半導體驻要 導體裝置之位置與特性皆列為資料 管理且利用於捲帶工序，所 M w 所以可將+導體裝置之特性（hfe 等級別），區分為多種等級，可眚 尬 ，， 了貝現只以一條作業線，將多 等級之半導體裝置依其特性別此交 行陘別收谷至輸送帶，而不會降低 作業效率之半導體裝置之製造方法。 一 第5’不良品之半導體梦著 菔裒置必然會留置於薄板上， 所以可不需加以區分種別，直接廢棄 ^ J貝現縮紐對於不 良品之多餘工序及時間之製造線。 [圖面之簡單說明] 第1圖為說明本發明製造方法的立體圖。 第2圖（A)為說明本發明製造方法的俯視圖 視圖。 第3圖為說明本發明製造方法的俯視圖。 第4圖為說明本發明製造方法的剖視圖。 第5圖（A)為說明本發明製造方法的剖視圖 視圖。 Μ氏張尺度適用中_家標準（CNS)A4規格⑽X 297公爱） 16 312545 -------1 —I 裝—I----丨訂-------丨· (請先閱讀背面之注咅？事項再填寫本頁) 492172 A7 B7 五、發明說明（Π ) 第6圖（A)為說明本發明製造方法 視圖。 的剖視圖、（B)為俯 視圖 第7圖（A)為說明本發明製造方法的剖視圖、（b)為 俯 第8圖（A)為說明本發明製造方法的剖視圖 視圖。 V )為俯第9圖⑷為說明本發明製造方法的俯視圖視圖。 為剖第10圖為說明本發明製造方法的俯視圖。第11圖為說明本發明製造方法的表。 弟12圖（Α)為說明本發明製造方土 。 个I 表仏万法的剖面圖、⑺）為 視圖 俯 視圖第本發明製造方法的俯視圖， 剖 體圖 第14圖⑷為說明本發明製造方法的立體圖、(B)為立 -1 --------訂---------. (請先閱讀背面之注音？事項再填寫本頁) 經 濟 部 智 慧財 產 局 第15圖為用以說明習知例之俯視圖 第16圖為用以說明習知例之刮視圖 第17圖為用以說明習知例之俯視圖 第18圖為用以說明習知例之剖視圖 [元件符號說明] 1 半導體晶片 3 模具 5 樹脂源 本紙張尺度適用中國國$標準（CNS)A4規格（210 X 297 2、31 線框架 4 模槽 6 流道 297 - 17 312545 492172 A7 B7 五、發明說明（18 ) 經濟部智慧財產局員工消費合作社印製 7 閘門 8 > 25 島部 9 堪材 10 導線 11 - 34 鋼線 12 樹脂 20 搭載部 21 基板 24 切割線 26 - 32a ^ 32b 導線部 27 第1連結部 28 第2連結部 29 共通連結部 30 > 42 貫穿孔 31a、31b 、31c 、 31d 外部電極 33 半導體晶片 35 樹脂層 36 切割板 40a ^ 40b ^ 40c ' 40d ' 40e 半導體裝置 41 輸送帶 43 輸送孔 44 膠帶 50 黏著薄板 51 金屬框 52 探針 53 照相機視野 54 認知用照相機 61 條碼 -裝· 訂----- "14 (請先閱讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 18 312545

Claims (1)

  1. 夂、申請專利範圍 種半導體裝置之製造方法，係將半導體晶片固定在具 有複數個搭載部之基板的各搭載部，以共同之樹脂層覆 蓋固定於前述各搭載部上之各前述半導體晶片後，使前 逑樹脂層抵接且將前述基板貼在黏著薄板，在貼附於前 述黏著薄板之狀態下進行切割及測定，且將貼附於前述 黏著薄板之半導體元件，直接收容於輸送帶，·其特徵在 該半導體裝置之製造方法中，前述半導體元件於測定 後，其各自之位置及特性會列入資料管理，前述半導體 元件會依其特性收容於輸送帶中。 2·如申請專利範圍第1項之半導體裝置之製造方法，其 中，韵述半導體元素係最少以一條輸送線，依其特性收 容於輸送帶中。 3·如申請專利範圍第丨項之半導體裝置之製造方法，其 t，固定前述黏著薄板的周圍之金屬框，各自具有條 碼，以該條碼進行資料管理。 4·如申請專利範圍第1項之半導體裝置之製造方法，其 中’前述黏著薄板上，貼有複數個前述基板，前述半導 體元件之複數資料會被列入管理。 請 先 閱 讀 背 面 之 注 意 I 再 填 寫 本 頁 經濟部智慧財產局員工消費合作社印製 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 19 312545
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