TW474031B - Semiconductor light emitting device - Google Patents

Semiconductor light emitting device Download PDF

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Publication number
TW474031B
TW474031B TW089122991A TW89122991A TW474031B TW 474031 B TW474031 B TW 474031B TW 089122991 A TW089122991 A TW 089122991A TW 89122991 A TW89122991 A TW 89122991A TW 474031 B TW474031 B TW 474031B
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Taiwan
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light
semiconductor light
emitting device
resin mold
emitting
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TW089122991A
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Takashi Ueda
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Rohm Co Ltd
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Priority claimed from JP31110199A external-priority patent/JP2001135862A/ja
Priority claimed from JP31109999A external-priority patent/JP2001135858A/ja
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Publication of TW474031B publication Critical patent/TW474031B/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/54—Encapsulations having a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
    • H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3025—Electromagnetic shielding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H01L33/60—Reflective elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Optical Transform (AREA)
  • Led Device Packages (AREA)

Description

474031 A7 五、發明說明（1 ) 【發明所屬技術領域】 本發明係有關一種要求有高分解能之絶 σ 馬is的發光部 且相對抵價之半導體發光裝置。 【習知之技術】 使用光學裝置的光電編碼器，眾所周4 有檢測物體移 動速度的線性編碼器與檢測轉動角度的旋轉編碼哭 、 種光電編碼器用的光學裝置為例’有在發光部：J如：： 二極管(LED)之半導體發光裝置，而在受光部則使 電二極管之半導體受光裝置之情況。 第10圖係表示前述LED之一例的概略正視圖。第 圖中，1係LED元件，2、3係一對導腳端子，4係金屬線。 =led元件側電極la與金屬線4相連接，並利用 銲線讓金屬線4電性連接於導腳端子3。 、此外’在未圖示之LED元件！的電極u的相反側形 成電極，該電極係以晶粒黏接（diebGnding)而電性連接於 導腳端子2。5係由透光性樹脂構成的塑模部，將LED夭 件1與金屬線4密封。如此，形成編碼器用之。舍 LED20之構造係用以使紅外線發光。 第η圖係將第1〇圖構成之LED2〇當作線性編碼器使 用之例的說明圖。第u圖中，1〇係使用透鏡的光學系， U係形成有多數裂縫a至N之矩形測定板，12係使用如 先電二極管之受光元件的受光部，13係信號線，14係信號 處理部。 ,_ eD20係作為面光源以發揮作用，並從LED2〇發光面 本紙—適用 1 (請先閱讀背面之注意事項再填寫本頁) 311976 474031 A7 __B7 五、發明說明（/ 碼器的發光部且相對低價之半導體發光裝置。 【發明之概述】 本發明之上述目的，係藉由在半導體發光裝置設置： 半導體發光元件；將前述半導體發光元件密封之透光性樹 月曰J模口 P，以及將別述半導體發光元件發出的輸出光轉換 為線狀光源射出之變換機構等以達成。 、 此外别述變換機構係構成具傷裂縫的遮光體，俾使 將通過前述裂縫的輪出光射出為佳。 又，刖述變換機構係以配設於前述半導體發光元件的 發光面且具備裂缝的遮光體，而前述樹脂塑模部則與前述 半導體發光元件同時密封前述遮光體為佳。 再者别述遮光體係以具有裂縫的金屬板為佳。 此外，别述金屬板以從前述樹脂塑模部導出，且沿著 前述樹脂塑模部的外表面折曲為佳。 ^另外，前述變換機構係以由遮光性樹脂構成的樹脂塑 模部所構成，而前述樹脂塑模部係在係相當於前述半導體 發光元件的發光面的領域中具備裂缝，俾使介由前述裂缝 將前述半導體發光元件的光導出為m，前述半導體 發光元件表面係以透光性樹脂覆蓋為特徵。 又别述變換機構係以具有裂縫的晶片輝墊，前述半 導體發光元件與前述晶片鋒墊相對，並使用遮光性絕緣樹 脂以面朝下的方式固定為佳。 而且，刖述半導體發光元件構成從側、面發光為佳。 再者刚述變換機構係以具有安裝於樹脂塑模部外側 1本紙張尺度適財iiii^rs)A4規格⑽x 297公愛 3 311976 474031 A7 -------— _B7____ 五、發明說明（5 ) 成透鏡，且以該透鏡將線光源的光源變換為多數點光 源的光源。由於從該透鏡形成的多數點光源射出平行的輸 . I I I I I I ^^1 I --- (請先閱讀背面之注意事項再填寫本頁) 出光’因此在形成微細的裂縫的測定板移動時，受光部可 以最佳之精密度受光或遮光。因此，本發明的半導體發光 裝置可對應作為要求有高分解能信號處理的編碼器的發光 部。 藉由配设刖述線光源，俾使通過前述透鏡的焦點，而 可獲得更良好的平行光源。 【發明之最佳實施型態】 以下’參照圖示來說明本發明之實施型態。 1 1實施剞能 第1圖係本發明第1實施型態之半導體發光裝置側視 圖’而第2圖係用於該半導體發光裝置之蓋子的展開正視 圖。第2圖中，蓋子50係藉由沖切加工sxjs等薄金屬板 而形成的。 經濟部智慧財產局員工消費合作社印製 5〇a係形成窄幅橫長之裂縫，50b、50c係在上部兩側 所形成的耳片，50d係蓋子本體，50e係腳部。在蓋子本體 50d與兩側的耳片50b、50c之間形成折曲線5〇χ，又，在 蓋子本體50d與腳部50e之間形成折曲線5〇y。 第2圖所示之蓋子50，係以折曲線5〇x、50y折曲， 並覆蓋於LED元件的發光面。第1圖係表示蓋子5〇覆蓋 在LED發光面之狀態的概略側視圖。 係如第1圖所示，該半導體發光裝置·所使用的半導體 發光裝置，係於LED元件lx處設有電極ia以及電極ib， 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 5 311976 474031 A7 五、發明說明（7 ) (請先閱讀背面之注意事項再填寫本頁) 成形。另外，如第3圖所示，該蓋子5〇被樹脂密封後，藉 由彎曲使可覆蓋於樹脂塑模部5的外側面，以形成遮光側 片5 0s亦可。依據此構造，不僅可使光之密閉性良好，也 可提升裂縫50a射出之光的強度。 又，取代藉由沖切加工形成蓋子5〇，且將其折曲覆蓋 於LED元# lx的發光面之方a，而冑由塑膜成型使側面 形成如第1圖所示之形狀亦可。/亦即如第4圖所示，亦可 將设有裂縫50a之蓋子5〇R使用遮光性合成樹脂進行塑模 成型，再與該合成樹脂製之蓋子5〇R同時用透明樹脂而藉 由塑模成型形成。 再且如第5圖所示，藉由焊接以透明樹脂5〇p至少 覆蓋在LED元件lx的發光面附近，另外也可藉由在該外 側進行使用遮光性樹脂之塑模成型，以形成附有裂縫之半 導體發光裝置。此時裂缝5s在相當於金型裂縫的領域形成 突起，該突起也可形成與前述透明樹脂5〇p的外表面抵 接。 一 經 濟 部 智 慧 財 產 局 員 工 消 費 合 作 社 印 製 又，也可以遮光性感光樹脂形成塑模樹脂，並藉由微 影選擇性地除去遮光性感光樹脂以形成裂縫。 此外，除了塑模構造外，也可配 j配°又附在外面的蓋子。 第6圖為本發明其他實施型態之半導體發光裝置的概略側 視圖。在第6圖之例中，將形成裂縫術的蓋子μ覆蓋在 透光性樹脂材構成的塑模部5的輪出先 ®兀耵出面。όΟχ、00y 係蓋子60的折曲部。從LED元件丨鼾 干iX射出的輪出光只通過 _該裂縫60a的部分’而使光束^朝受光部前進。 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公爱） 311976 7 •e ^yjji Α7 五、發明說明（9 ) :見圖’第9圖係正視圖。第8圖中，在半導體發光元件 lc j MM㈣㈣陰極電極In形半導體 的接人Γ科導體le，在n形半導體1e*p形半導體1e 的接合部形成有發光層ld。 背 在LED1的透光性樹脂構成的塑模部5上，與㈣元 :的發光層ld相對向’對於受光元件將射出輸出光的 的^ 透鏡a。利用塑模部5形成 二朝 不同的角度從咖元件1X側面形成的發光 二:朝則方射出的輸出光變換成多數的點光源。從該多數 的點先源形成平疗光束La而朝受光部前進。 訂 由t述敎板llx的移動方向A來觀察，該平行光束 係在透鏡5a的各點中由點光源輸出者。亦即，本發明 光在:模部5形成的透鏡5a形成多數的點光源，與從該 原平行射出的輸出光相對’使形成多數裂缝的測定板 41 移動，形成以受光部遮光、受光的信號，以測定測定 板11X的移動速度。 —如此，由於在發光部形成多數的點光源，故即使在測 疋板llx上形成細微裂縫的情形下，當敎板ιΐχ 朝箭頭Α所示之方向移動時，受光部也可進行良好地受光 或遮光’並以高分解能處理信號。 因而’依照第8圖構造的LED1 ’即使對於要求具 高分解能信號處理的編碼器，也可作為發光部來對應' 示中’從透鏡5a的點光源可形成約q吋單位15〇 數平行輸出光。 本紙張尺度適用中國國豕標準（qsjs)A4規格（2〗〇 X 297公釐 311976 視圖 474031 五、發明說明（U ) 圖為表示本發明其他實施型態之半導體發光裝置 的側視圖。 圖為表示本發明其他實施型態之半導體發光裝置 的側視圖。 钱兀衣1 圖為表示本發明其他實施型態之半導體發光裝置 的側視圖。 第8圖為本發明第二實施型態之半導體發光裝置的側 第9圖為第4圖之正視圖。 第1〇圖為表示以往之半導體發光裝置的正視圖。 第11圖為將半導體發光裝置作為線性編碼器使用之 例的說明圖。 符號之說明 (請先閱讀背面之注意事項再填寫本頁) -裝--------訂i 經濟部智慧財I局員工消費合作社印製 半導體發光裝置（LED) la、lb 電極 lc n形半導體 Id 發光層 le P形半導體 Is 透光性絕緣樹脂 lx LED元件 2、3 導腳端子 4 金屬線 5 樹脂塑模部 5a 透鏡 度適用中國國家標準（CNS)A4規格（210 X 297公釐） 11 311976

Claims (1)

  1. ^^031 ^^031
    申請專利範圍 1_ I種半導體發光裝置，其係具備：半導體發光元件；將 :述半導體發光元件密封之透光性樹脂塑模部；以及將 (請先閱讀背面之注意事項再填寫本頁) 别逑半導體發光元件發出的輸出光變換為線性光源以 射出之變換機構。 2·如，請專利範圍第！項之半導體發光裝置，其中，前述 變換機構係構成具傷有裂縫之遮光體，俾使通過前述裂 縫的輪出光射出。 如申明專利範圍第丨項之半導體發光裝置，其中，前述 變換機構係配設於前述半導體發光元件的發光面且具 備有裝缝的遮光體，而前述樹脂塑模部與前述半導體發 光元件同時密封前述遮光體。 〜 4·如申請專利範圍第3項之半導體發光裝置，其中，前述 遮光體係具有裂缝的金屬板。 5·如申請專利範圍第4項之半導體發光裝置，其中，前述 金屬板係從前述樹脂塑模部導出，且沿著前述樹脂塑模 部的外表面折曲。 經濟部智慧財產局員工消費合作社印製 6·如申請專利範圍第i項之半導體發光裝置，其中，前述 變換機構係由遮光性樹脂構成的樹脂塑模部所構成，而 前述樹脂塑模部係構成在相當於前述半導體發光元件 的發光面領域具備有裂縫，俾使介由前述裂縫將前述半 導體發光元件的光導出。 7·如申請專利範圍第6項之半導體發光裝置，其中，前述 半導體發光元件表面係用透光性樹脂覆蓋。 8.如申請專利範圍第7項之半導體發光裝置，其中，前述 本紙張尺度適用中國國家標準（CNS)A4規;fi (210 X 297公髮/ 13 311976
TW089122991A 1999-11-01 2000-11-01 Semiconductor light emitting device TW474031B (en)

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JP31110199A JP2001135862A (ja) 1999-11-01 1999-11-01 半導体発光装置
JP31109999A JP2001135858A (ja) 1999-11-01 1999-11-01 半導体発光装置

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WO2001033641A1 (en) 2001-05-10
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