TW466487B - Ferroelectric memory device retaining ROM data - Google Patents
Ferroelectric memory device retaining ROM data Download PDFInfo
- Publication number
- TW466487B TW466487B TW089102119A TW89102119A TW466487B TW 466487 B TW466487 B TW 466487B TW 089102119 A TW089102119 A TW 089102119A TW 89102119 A TW89102119 A TW 89102119A TW 466487 B TW466487 B TW 466487B
- Authority
- TW
- Taiwan
- Prior art keywords
- ferroelectric
- data
- capacitor
- bit line
- ferroelectric capacitor
- Prior art date
Links
- 239000003990 capacitor Substances 0.000 claims abstract description 139
- 230000015654 memory Effects 0.000 claims abstract description 93
- 230000010287 polarization Effects 0.000 claims description 52
- 230000005684 electric field Effects 0.000 claims description 23
- 230000002079 cooperative effect Effects 0.000 claims description 8
- 230000000875 corresponding effect Effects 0.000 claims description 2
- 238000009434 installation Methods 0.000 claims description 2
- PCTMTFRHKVHKIS-BMFZQQSSSA-N (1s,3r,4e,6e,8e,10e,12e,14e,16e,18s,19r,20r,21s,25r,27r,30r,31r,33s,35r,37s,38r)-3-[(2r,3s,4s,5s,6r)-4-amino-3,5-dihydroxy-6-methyloxan-2-yl]oxy-19,25,27,30,31,33,35,37-octahydroxy-18,20,21-trimethyl-23-oxo-22,39-dioxabicyclo[33.3.1]nonatriaconta-4,6,8,10 Chemical compound C1C=C2C[C@@H](OS(O)(=O)=O)CC[C@]2(C)[C@@H]2[C@@H]1[C@@H]1CC[C@H]([C@H](C)CCCC(C)C)[C@@]1(C)CC2.O[C@H]1[C@@H](N)[C@H](O)[C@@H](C)O[C@H]1O[C@H]1/C=C/C=C/C=C/C=C/C=C/C=C/C=C/[C@H](C)[C@@H](O)[C@@H](C)[C@H](C)OC(=O)C[C@H](O)C[C@H](O)CC[C@@H](O)[C@H](O)C[C@H](O)C[C@](O)(C[C@H](O)[C@H]2C(O)=O)O[C@H]2C1 PCTMTFRHKVHKIS-BMFZQQSSSA-N 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 abstract description 28
- 238000000034 method Methods 0.000 abstract description 7
- 238000010586 diagram Methods 0.000 description 15
- 230000001419 dependent effect Effects 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 238000011084 recovery Methods 0.000 description 3
- 230000000717 retained effect Effects 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 235000012149 noodles Nutrition 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 208000032544 Cicatrix Diseases 0.000 description 1
- 241000406668 Loxodonta cyclotis Species 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005621 ferroelectricity Effects 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 231100000241 scar Toxicity 0.000 description 1
- 230000037387 scars Effects 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C14/00—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Dram (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11072639A JP2000268581A (ja) | 1999-03-17 | 1999-03-17 | Ｒｏｍデータを保持する強誘電体メモリ装置 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW466487B true TW466487B (en) | 2001-12-01 |
Family
ID=13495169
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW089102119A TW466487B (en) | 1999-03-17 | 2000-02-09 | Ferroelectric memory device retaining ROM data |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US6229730B1 (enExample) |
| EP (1) | EP1037213B1 (enExample) |
| JP (1) | JP2000268581A (enExample) |
| KR (1) | KR100534220B1 (enExample) |
| DE (1) | DE60021939T2 (enExample) |
| TW (1) | TW466487B (enExample) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3971536B2 (ja) * | 1999-09-14 | 2007-09-05 | 松下電器産業株式会社 | 強誘電体メモリ装置 |
| US20030025649A1 (en) * | 2000-09-08 | 2003-02-06 | Wynne Willson Peter David | Image projection apparatus |
| JP4233205B2 (ja) * | 2000-09-28 | 2009-03-04 | シャープ株式会社 | リセット装置、半導体集積回路装置および半導体記憶装置 |
| DE10058965B4 (de) * | 2000-11-28 | 2007-10-11 | Infineon Technologies Ag | RAM-Speicher |
| JP2003233984A (ja) * | 2001-12-04 | 2003-08-22 | Sanyo Electric Co Ltd | メモリ装置 |
| JP2003263886A (ja) * | 2002-03-08 | 2003-09-19 | Fujitsu Ltd | ビット線容量を最適化できる強誘電体メモリ |
| US6804140B2 (en) * | 2002-04-17 | 2004-10-12 | Macronix International Co., Ltd. | Capacitance sensing method of reading a ferroelectric RAM |
| US6590798B1 (en) * | 2002-05-08 | 2003-07-08 | Texas Instruments Incorporated | Apparatus and methods for imprint reduction for ferroelectric memory cell |
| SG11201901168UA (en) | 2016-08-31 | 2019-03-28 | Micron Technology Inc | Apparatuses and methods including ferroelectric memory and for operating ferroelectric memory |
| EP3507804A4 (en) | 2016-08-31 | 2020-07-15 | Micron Technology, INC. | FERROELECTRIC MEMORY CELLS |
| JP6737953B2 (ja) | 2016-08-31 | 2020-08-12 | マイクロン テクノロジー，インク． | 強誘電体メモリを含む装置および強誘電体メモリにアクセスするための方法 |
| CN109690680B (zh) | 2016-08-31 | 2023-07-21 | 美光科技公司 | 包含二晶体管一电容器的存储器及用于存取所述存储器的设备与方法 |
| US10867675B2 (en) | 2017-07-13 | 2020-12-15 | Micron Technology, Inc. | Apparatuses and methods for memory including ferroelectric memory cells and dielectric memory cells |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5086412A (en) * | 1990-11-21 | 1992-02-04 | National Semiconductor Corporation | Sense amplifier and method for ferroelectric memory |
| TW378323B (en) * | 1994-09-22 | 2000-01-01 | Matsushita Electric Industrial Co Ltd | Ferroelectric memory device |
| EP0749127B1 (en) | 1995-06-14 | 2001-09-26 | Motorola, Inc. | Data storage element and method for restoring data |
| TW322578B (enExample) * | 1996-03-18 | 1997-12-11 | Matsushita Electron Co Ltd | |
| US5969979A (en) * | 1996-03-25 | 1999-10-19 | Matsushita Electronics Corporation | Ferroelectric memory device |
| US5818771A (en) * | 1996-09-30 | 1998-10-06 | Hitachi, Ltd. | Semiconductor memory device |
| JP3933736B2 (ja) * | 1996-12-09 | 2007-06-20 | ローム株式会社 | 強誘電体コンデンサを備えた半導体装置 |
| JPH10270654A (ja) * | 1997-03-27 | 1998-10-09 | Toshiba Corp | 半導体記憶装置 |
| JP3727157B2 (ja) * | 1997-11-19 | 2005-12-14 | Ｎｅｃエレクトロニクス株式会社 | 半導体記憶装置及びその試験方法 |
-
1999
- 1999-03-17 JP JP11072639A patent/JP2000268581A/ja not_active Withdrawn
-
2000
- 2000-02-07 EP EP00300946A patent/EP1037213B1/en not_active Expired - Lifetime
- 2000-02-07 DE DE60021939T patent/DE60021939T2/de not_active Expired - Fee Related
- 2000-02-09 TW TW089102119A patent/TW466487B/zh not_active IP Right Cessation
- 2000-02-11 KR KR10-2000-0006465A patent/KR100534220B1/ko not_active Expired - Fee Related
- 2000-03-15 US US09/526,280 patent/US6229730B1/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| KR20000062547A (ko) | 2000-10-25 |
| DE60021939D1 (de) | 2005-09-22 |
| DE60021939T2 (de) | 2006-03-30 |
| EP1037213A3 (en) | 2001-01-17 |
| EP1037213A2 (en) | 2000-09-20 |
| KR100534220B1 (ko) | 2005-12-08 |
| US6229730B1 (en) | 2001-05-08 |
| JP2000268581A (ja) | 2000-09-29 |
| EP1037213B1 (en) | 2005-08-17 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TW389901B (en) | Ferroelectric random access memory device with reference cell array blocks | |
| TW466487B (en) | Ferroelectric memory device retaining ROM data | |
| US6301145B1 (en) | Ferroelectric memory and method for accessing same | |
| CN1112704C (zh) | 具有改善可靠性的铁电随机存取存储器器件 | |
| JP3848772B2 (ja) | 強誘電体ランダムアクセスメモリ装置及びメモリセルのデータ書込／読出方法 | |
| TW469427B (en) | Memory device having redundancy cells | |
| CN100530420C (zh) | 非易失性无源矩阵器件及其读出方法 | |
| TW416050B (en) | Semiconductor memory device | |
| JP2001319472A (ja) | 半導体記憶装置 | |
| TW419809B (en) | Non-volatile semiconductor memory | |
| TW446943B (en) | Semiconductor memory apparatus and access method for a semiconductor memory apparatus | |
| JP2002032984A (ja) | 強誘電体記憶装置 | |
| TW558721B (en) | Memory device having redundant cells | |
| JP3487753B2 (ja) | 半導体記憶装置 | |
| JP4033624B2 (ja) | 強誘電体メモリ | |
| JP4083173B2 (ja) | 半導体メモリ | |
| JP2006344289A (ja) | 強誘電体記憶装置 | |
| JP2002269973A (ja) | 強誘電体メモリ装置およびその駆動方法 | |
| TW446948B (en) | Non-volatile semiconductor memory device | |
| JP2000011665A (ja) | 強誘電体メモリ | |
| JP4099349B2 (ja) | 強誘電体メモリ | |
| JP3717097B2 (ja) | 強誘電体メモリ | |
| JP3588376B2 (ja) | 強誘電体メモリ | |
| JP2001167571A (ja) | 集積メモリ | |
| JPH09134594A (ja) | 半導体不揮発メモリ |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GD4A | Issue of patent certificate for granted invention patent | ||
| MM4A | Annulment or lapse of patent due to non-payment of fees |