KR100534220B1 - Ｒｏｍ 데이터를 유지하는 강유전체 메모리 장치 - Google Patents

Ｒｏｍ 데이터를 유지하는 강유전체 메모리 장치 Download PDF

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Publication number
KR100534220B1
KR100534220B1 KR10-2000-0006465A KR20000006465A KR100534220B1 KR 100534220 B1 KR100534220 B1 KR 100534220B1 KR 20000006465 A KR20000006465 A KR 20000006465A KR 100534220 B1 KR100534220 B1 KR 100534220B1
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KR
South Korea
Prior art keywords
data
memory cell
ferroelectric capacitor
ferroelectric
bit line
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR10-2000-0006465A
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English (en)
Korean (ko)
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KR20000062547A (ko
Inventor
가또다쓰오
Original Assignee
후지쯔 가부시끼가이샤
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Application filed by 후지쯔 가부시끼가이샤 filed Critical 후지쯔 가부시끼가이샤
Publication of KR20000062547A publication Critical patent/KR20000062547A/ko
Application granted granted Critical
Publication of KR100534220B1 publication Critical patent/KR100534220B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C14/00—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
  • Semiconductor Memories (AREA)
KR10-2000-0006465A 1999-03-17 2000-02-11 Ｒｏｍ 데이터를 유지하는 강유전체 메모리 장치 Expired - Fee Related KR100534220B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP11072639A JP2000268581A (ja) 1999-03-17 1999-03-17 Ｒｏｍデータを保持する強誘電体メモリ装置
JP99-72639 1999-03-17

Publications (2)

Publication Number Publication Date
KR20000062547A KR20000062547A (ko) 2000-10-25
KR100534220B1 true KR100534220B1 (ko) 2005-12-08

Family

ID=13495169

Family Applications (1)

Application Number Title Priority Date Filing Date
KR10-2000-0006465A Expired - Fee Related KR100534220B1 (ko) 1999-03-17 2000-02-11 Ｒｏｍ 데이터를 유지하는 강유전체 메모리 장치

Country Status (6)

Country Link
US (1) US6229730B1 (enExample)
EP (1) EP1037213B1 (enExample)
JP (1) JP2000268581A (enExample)
KR (1) KR100534220B1 (enExample)
DE (1) DE60021939T2 (enExample)
TW (1) TW466487B (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3971536B2 (ja) * 1999-09-14 2007-09-05 松下電器産業株式会社 強誘電体メモリ装置
US20030025649A1 (en) * 2000-09-08 2003-02-06 Wynne Willson Peter David Image projection apparatus
JP4233205B2 (ja) * 2000-09-28 2009-03-04 シャープ株式会社 リセット装置、半導体集積回路装置および半導体記憶装置
DE10058965B4 (de) * 2000-11-28 2007-10-11 Infineon Technologies Ag RAM-Speicher
JP2003233984A (ja) * 2001-12-04 2003-08-22 Sanyo Electric Co Ltd メモリ装置
JP2003263886A (ja) * 2002-03-08 2003-09-19 Fujitsu Ltd ビット線容量を最適化できる強誘電体メモリ
US6804140B2 (en) * 2002-04-17 2004-10-12 Macronix International Co., Ltd. Capacitance sensing method of reading a ferroelectric RAM
US6590798B1 (en) * 2002-05-08 2003-07-08 Texas Instruments Incorporated Apparatus and methods for imprint reduction for ferroelectric memory cell
JP6777369B2 (ja) 2016-08-31 2020-10-28 マイクロン テクノロジー，インク． 強誘電体メモリを含み、強誘電体メモリを動作するための装置及び方法
EP3507806B1 (en) 2016-08-31 2022-01-19 Micron Technology, Inc. Apparatuses and methods including ferroelectric memory and for accessing ferroelectric memory
KR102227270B1 (ko) * 2016-08-31 2021-03-15 마이크론 테크놀로지, 인크. 강유전 메모리 셀
WO2018044510A1 (en) 2016-08-31 2018-03-08 Micron Technology, Inc. Apparatuses and methods including two transistor-one capacitor memory and for accessing same
US10867675B2 (en) 2017-07-13 2020-12-15 Micron Technology, Inc. Apparatuses and methods for memory including ferroelectric memory cells and dielectric memory cells

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5086412A (en) * 1990-11-21 1992-02-04 National Semiconductor Corporation Sense amplifier and method for ferroelectric memory
TW378323B (en) * 1994-09-22 2000-01-01 Matsushita Electric Industrial Co Ltd Ferroelectric memory device
DE69615457T2 (de) 1995-06-14 2002-05-29 Motorola, Inc. Datenspeicherelement und Datenwiederherstellungsverfahren
TW322578B (enExample) * 1996-03-18 1997-12-11 Matsushita Electron Co Ltd
DE69736080T2 (de) * 1996-03-25 2006-10-19 Matsushita Electric Industrial Co., Ltd., Kadoma Ferroelekrische Speicheranordnung
US5818771A (en) * 1996-09-30 1998-10-06 Hitachi, Ltd. Semiconductor memory device
JP3933736B2 (ja) * 1996-12-09 2007-06-20 ローム株式会社 強誘電体コンデンサを備えた半導体装置
JPH10270654A (ja) * 1997-03-27 1998-10-09 Toshiba Corp 半導体記憶装置
JP3727157B2 (ja) * 1997-11-19 2005-12-14 Ｎｅｃエレクトロニクス株式会社 半導体記憶装置及びその試験方法

Also Published As

Publication number Publication date
EP1037213A2 (en) 2000-09-20
KR20000062547A (ko) 2000-10-25
JP2000268581A (ja) 2000-09-29
TW466487B (en) 2001-12-01
EP1037213A3 (en) 2001-01-17
EP1037213B1 (en) 2005-08-17
DE60021939T2 (de) 2006-03-30
US6229730B1 (en) 2001-05-08
DE60021939D1 (de) 2005-09-22

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