TW449881B - Semiconductor device - Google Patents

Semiconductor device Download PDF

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Publication number
TW449881B
TW449881B TW089103071A TW89103071A TW449881B TW 449881 B TW449881 B TW 449881B TW 089103071 A TW089103071 A TW 089103071A TW 89103071 A TW89103071 A TW 89103071A TW 449881 B TW449881 B TW 449881B
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TW
Taiwan
Prior art keywords
gap
wiring substrate
semiconductor element
semiconductor device
average
Prior art date
Application number
TW089103071A
Other languages
English (en)
Inventor
Hideo Aoki
Original Assignee
Toshiba Corp
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Publication date
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Application granted granted Critical
Publication of TW449881B publication Critical patent/TW449881B/zh

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    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
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    • H01L2924/351—Thermal stress

Description

經濟部智慧財產局員工消費合作社印製 4 49 88» A7 _B7_ 五、發明說明（I ) 〔發明領域〕 本發明係有關半導體裝置，尤其有關配線基板與半導 體元件間之樹脂密封層之生產力高之半導體裝置° 〔相關技術之說明 習知|因應半導體裝置之小型化及薄型化之要求，進 行半導體晶片（裸晶片）之浮片晶片（flip Chip )連接》 浮片晶片連接，係將半導體晶片對於配線基板面朝下（ face down )(將電極終端區域（bump )形成面朝下）搭載 ，安裝於電極終端區域之金，銲錫等之球狀之突起電極（ 以下，稱爲凸塊（bump ))，押壓於配線基板之連接終端 區域加以加熱，將銲錫等回銲（reflow )接合之方法，較 線結合（wire bonding)之連接相較，優於封裝密度。 像這樣實施浮片晶片連接之半導體裝置，係起因於矽 等半導體晶片與配線基板（例如，玻璃布環氧樹脂浸滲基 板）之熱膨脹率之不同之應力|會施加於半導體晶片與配 線基板之接合手段之凸塊，所以具有會損及接合部可靠性 之問題。 因此，結束銲錫等回銲之後，如第9圖所示，在半導 體晶片1 1與配線基板1 2之間隙部，將如摻混塡充材（ filler )之環氧樹脂之液狀樹脂材料1 3利用毛細管作用加 以注入，塡充，進行稱爲向下塡充（under fill )之樹脂密 封層之形成。藉此樹脂密封層，不僅可緩和此配線基板 1 2與半導體晶片1 1間之熱膨脹率差異起因之熱應力， 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） -4- --,---------裝--------訂----------線！ (請先閱讀背面之注意事項再填寫本頁) A7 4 49 8 8 1 ____B7_ 五、發明說明？) 並且，進行浮片晶片連接部之補強及機械性保護。按’圖 中符號1 1 a ，係半導體晶片1 1之電極終端區域’ 1 2 a係表示配線基板1 2之配線層及連接終端區域’ 1 4係表示銲錫凸塊。符號1 5係朝下塡充用之液狀樹脂 材料1 3滴落，供給所用之分配器（despenser)。 然而，於習知之半導體裝置，係相當於銲錫凸塊1 4 高度之半導體晶片1 1與配線基板1 2間隙之大小（尺寸 )，爲與銲錫凸塊14之配設（連接）節距無關，因設定 有滿足連接製程或可靠性之要求，所以，花費於液狀樹脂 材料1 3之注入，塡充作業之許多時間。尤其，半導體晶 片1 1大小（面積）大，並且銲錫凸塊1 4之配設節距 2 5 0 /zm以下之精細裝置，到塡充結束爲止具有需要許 多時間之問題。 爲了提高液狀樹脂材料1 3之注入，塡充速度*雖然 可考慮到加熱樹脂材料以降低流動黏度之方法，但是依加 熱溫度，若經過一定時間時就會開始樹脂之硬化反應。並 且，由硬化反應之開始，樹脂材料之塡充速度會明顯地降 低，有時會發生塡充沒有完成之情形。 〔發明槪要〕 本發明係欲解決像這種問題所發明者，其目的係提供 一種半導體晶片與配線基板之浮片晶片連接部之可靠性高 ，並且朝下塡充形成所需之樹脂材料之塡充可在短時間結 束之半導體裝置。 本紙張尺度適用_國國家標準（CNS)A4規格（210 X 297公釐） ； 裝--------訂---------線 (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作杜印製 經濟部智慧財產局員工消費合作社印製 4 49 881 Α7 _____ Β7 五、發明說明（3 ) 本發明係一種半導體裝置，其特徵爲備有：在絕緣基 板之至少一方之主面形成配線層及連接端子之配線基板， 與在此配線基板之上述主面成面朝下所搭載之半導體元件 ，與在上述半導體元件之電極端子形成面配設複數列，連 接上述半導體元件與上述配線基板之凸塊，與塡充於上述 半導體元件與上述配線基板之間隙部之樹脂密封層，將上 述半導體元件與上述配線基板之間隙大小之平均（平均間 隙）視爲Η，上述凸塊之配設節距之平均（平均節距）視 爲Ρ，將上述間隙大小之偏差視爲D時|具有以下式（1 )所表示之平均間隙Η。 P/4-D/2 客 HSP/4 + D/ 2...... (1) 將本發明之半導體裝置之構造，於第1圖以模式表示 ，分別表示半導體元件與配線基板之間隙大小Η 〇，及凸 塊之配設節距Ρ0。於此圖，符號1係凸塊，2係半導體 元件（晶片），3係配線基板，4係表示樹脂密封層。 於本發明，作爲凸塊1係使用由Pb — Sn係，Sn -Ag系，Sn— Ag~Cu等之銲錫所成之凸塊。這些 凸塊1係在半導體元件2之電極終端區域形成面配設成複 數列（2列以上），但是|尤其區域狀，亦即配設成形成 配設領域（area )之半導體裝置時，縮短樹脂材料之塡充 時間之效果爲大。又，這種凸塊1之配設節距P 〇係成爲 6 0〜2 5 Ομιη較佳。若凸塊1之配設節距P0超過 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） -0 - .-- ------------訂--------I <請先閱讀背面之注意事項再填寫本頁) 449 88 經濟部智慧財產局員工消費合作社印製 Α7 Β7 五、發明說明（4 ) 2 5 Ο μιη時，幾乎沒有縮短塡充時間之效果，又配設節 距Ρ 0爲未滿6 0 時，具有製造上之界限而有困難。 並且，作爲配線基板3，係在如玻璃布樹脂浸滲基板 之絕緣基板之至少一方主面（單面或兩面），可使用由銅 ，銅系合金，鎳系合金等所形成之配線層及連接用終端區 域之基板。 於本發明之半導體裝置，將配線基板3與半導體元件 2間隙之大小平均（平均間隙）Η，藉設定於上述（1 ) 式所示範圍|就可將朝下塡充形成所需之樹脂材料之塡充 作業，儘量在短時間結束，提高生產力。 按，凸塊1之配設節距係通常並非整個配設面爲一定 ，因依位置而節距相異，所以Ρ係表示配設節距之平均値 (平均節距）。並且，此平均節距Ρ，係如第2圖所示， 可視成沿著樹脂材料之塡充方向配設之凸塊列間之間隔 Pi之平均値。（Ρ=ΣΡ;/Ν，但是，Ν係凸塊數） ο 又，半導體元件2與配線基板3之間隙（尺寸），係 具有由於配線基板3之翹反，各個凸塊1之高度偏差，構 成半導體裝置之各零件之稱這些之偏差起因之偏差D(= 間隙最大値Η a X _間隙最小値H m , η )。所以，也考慮 此偏差D，就平均間隙値Η設定下式。 茲就導出上述（1 )式之過程表示於下。 如上述朝下塡充用之液狀樹脂材料，係在半導體元件 與配線基板之間隙部利用毛細管作用注入，塡充，所以， 本紙張尺度適用令國國家標準（CNS)A4規格（210* 297公釐） ；--------裝--------訂---------線 (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 4 498 8 1 Α„ Αί I--- B7 五、發明說明自) 樹脂材料之塡充所花之時間，係依存於間隙大小，凸塊之 配設（連接）節距，所塡充部分之長度，樹脂材料之流動 性（黏度），樹脂材料之接面張力等。 亦即，因係屬於毛細管作用之塡充，所以，若增大（ 寬廣）間隙大小時，流動阻力就變小，塡充速度變快而可 縮短塡充所需之時間。同樣地，若凸塊徑相同時，凸塊之 配設節距變大時，由於凸塊之流動阻力就變小，塡充所需 之時間會變短。若將凸塊之配設節距變成一定時，凸塊徑 變小時，流動阻力就變小，塡充速度就變快。 第3圖係表示配線基板之電極終端區域徑A與間隙大 小Η之關係之圖表。此圖表係將凸塊徑定爲1 2 5 ( 亦即，凸塊體積爲一定），改變終端區域徑A時之間隙大 小Η之實測値爲依據製作。從此圖，即使是相同凸塊徑， 若將凸塊徑變小時，曉得可將凸塊高度變高，亦即可增大 間隙之大小Η。 但是，半導體元件及配線基板之電極終端區域徑A， 係由於製造程序上之問題，及對於連接部之應力集中，電 流密度增大引起之遷移（migration )等具有可靠性之問題 ，太小時並非佳，在現況下，終端區域徑A之實用性最小 値係成爲100/zm程度。 第4圖係表示終端區域徑A爲1 〇 0 /zm時|改變凸 塊之銲錫量，凸塊徑B與間隙之大小Η實際測定之結果之 圖表。從此圖就可淸楚，若欲增大間隙之大小Η時，也不 得不增大凸塊徑Β。 -----：---I----裝--------訂---------線！ (請先閱讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） -8- 經濟部智慧財產局員工消費合作社印製 449881 _______B7____ 五、發明說明p ) 並且’間隙之大小Η與凸塊徑B，係從流動阻力之立 場具相反之因素，若依據液狀樹脂材料之流動解析之結果 ，在間隙之大小Η與凸塊徑Β，存在有因應凸塊之配設節 距Ρ之最佳値。 於第5圖表示考慮實驗及毛細管力與流動阻力均衡之 流動解析之結果。從此圖，就曉得在液狀樹脂材料之塡充 時間存在有最小値，塡充時間變成最小之間隙大小（最佳 間隙）Η，爲凸塊之配設節距ρ之1/4 (Η=Ρ/4) 。並且’此比例關係爲由解析及實驗之結果曉得，不由樹 脂材料之物性或塡充溫度就可成立。 並且，間隙之大小及凸塊之配設節距，位於一定範圍 時，將間隙之大小Η作爲平均値，將配設節距Ρ，沿著樹 脂材料之塡充方向所配設之凸塊列之間隙平均値，也可成 立上述之關係。 但是，以上所說明者，係半導體元件與配線基板之任 一，假定爲完全平坦之板狀體時之考察，實際上，爲半導 體元件與配線基板之各個存在有若干翹反。又，銲錫凸塊 ，係具有起因於製造程序之高度偏差，並且，由於製造程 度或材料等，因終端區域徑，半導體元件翹反量，配線基 板翹反量也會發生偏差，半導體元件與配線基板之間隙大 小，係在某幅度上將在上下搖動。在此上下搖動之幅度之 偏差量D，雖然依各個情形而異，但是通常係成爲1 〇〜 2 Ο V m。 因此，在配線基板半導體元件爲浮片晶片連接之半導 本紙張尺度適用中國國家標準（CNS)A4規格（2】0 X 297公釐） -9^ I I I I I ----it---------線 (請先閱讀背面之注音？事項再填寫本頁) 449 8 8 經濟部智慧財產局員工消費合作社印製 Α7 Β7 五、發明說明f ) 體裝置，相當於凸塊高度之半導體元件與配線基板之間隙 大小之平均（平均間隙）Η，藉成爲如下， P/4-D/2SH 客 P/4 + D/ 2 可將對於間隙部之樹脂材料之塡充在短時間完成，可形成 良好之朝下塡充。並且，將連接部之可靠性高之半導體裝 置，以高生產力並且低成本獲得。 又，若提高溫度時，在樹脂之硬化前，樹脂材料之黏 度會降低，所以，可縮短塡充所需之時間。於本發明之半 導體裝置，因塡充所需之時間會變極短，所以，在樹脂開 始硬化之前就可完成塡充。因此，也可提高溫度塡充，並 且，也可達成提高生產力。 尤其，凸塊之平均節距Ρ爲2 5 Ο Mm以下時，凸塊 之流動阻力將增大，塡充時間會明顯地增大。因此，若沒 有將間隙大小之設定成爲最佳時，對於半導體裝置之生產 力帶來重大障礙，但是，藉適用本發明所設定之平均間隙 Η，工業上可得到許多價値。 〔較佳實施例之詳細說明〕 茲就本發明之較佳實施例說明如下。 第6圖係將本發明之半導體裝置之第1實施例剖面地 表示者，第7圖係於此實施例表示凸塊之配設狀態之半導 體晶片之平面圖。 本纸張尺度適用中國國家標準（CNS)A4規格（210 x 297公釐） ---.--------^----I-----------^ I . ί請先閱讀背面之注意事項再填寫本頁) A7 449881 __B7__ 五、發明說明@ ) 於這些圖，符號5係表示矽等之半導體晶片，此半導 體晶片5之電極終端區域5 a形成面，有球狀之銲鍚終端 區域6排列2列所形成'•又，符號7係表示在兩面配線層 及連接於其之連接終端區域7 a所配設之玻璃一環氧配線 基板，在此配線基板7之單面，有半導體晶片5面朝下搭 載，經由此銲錫終端區域6以電氣方式連接。亦即，安裝 於半導體晶片5之電極終端區域5 a上之銲錫終端區域6 爲抵接於配線基板7之連接終端區域7a ，而由銲錫回銲 加以接合。並且，半導體晶片5與配線基板7之間隙部之 大小爲其平均値（平均間隙）Η係成爲滿足下式之數値。 P/4-D^H^P/4+D/2 (式中，P係銲錫凸塊之配設平均（平均節距），D係表 示間隙大小之偏差（=間隙最大値H m a x —間隙最小値 H m i η 0 ) 偏差D係例如，由剖面觀察法等，測定晶片之4角隅 與中心部之5處之凸塊高度，若Hmu爲5 8 ’ 1^1=1爲45^111時，將變成D=13vm。此時，若凸 塊之配設節距P爲2 0 0 //m時，凸塊之設計値亦即所有 凸塊之平均値爲位於56 . 5μιη與43 . 5ym間時’ 決定凸塊銲錫量，或銲錫凸塊徑及基板終端區域徑’靜錫 終端區域高度就可以= 亦即，對於銲錫終端區域6之平均節距P及間隙之偏 本紙張尺度適用令國國家標準（CNS)A4規格（210 X 297公发） (請先閱讀背面之注意事項再填寫本頁} 經濟部智慧財產局員工消費合作杜印製 -11 - I · I n I I I [ I 一5'* * ^ —— — — — — — illllltl — 1« I n — -—If — — — — —— — · 經濟部智慧財產局員工湞費合作社印製 449881 A7 ___B7_ 五、發明說明P ) 差D，能夠滿足上式，設定銲錫終端區域6與配線基板7 之平均間隙Η之最佳範圍，能夠獲得此設定範圍，來設定 銲錫終端區域6之直徑。 又，在配線基板7他方之面，形成有屬於外部連接端 子之外部連接終端區域7 b，此外部連接終端區域7 b與 銲錫終端區域6係經由設於配線基板7之通孔（via hole ) 等之內部配線（省略圖示）所導通。並且，在配線基板7 與半導體晶片5之間配置有銲錫終端區域6之空間部（具 有上述平均間隙Η )，形成有由環氧系樹脂所成之樹脂密 封（朝下塡充）8。在此，樹脂密封（朝下塡充）8之形 成爲將具有0.01〜2Pa·S黏度之液狀樹脂材料， 藉注入，塡充於配線基板7與銲錫終端區域6之間隙部進 行。並且，由此樹脂密封8，半導體晶片5與配線基板7 之實施連接部之機械性保護|及緩和兩者之熱膨脹不同起 因之熱應力。 於構成爲如此之第1實施例之半導體裝置，半導體晶 片5與配線基板7之平均間隙Η >由於成爲滿足P/4 — D/2SHSP/4+D/2(式中Ρ係凸塊之平均節距 ，D係表示間隙部大小之偏差）最佳値，所以，對於配線 基板7與半導體晶片5間隙部之樹脂材料之塡充，可在短 時間完成。因此，可獲得具有朝下塡充之浮片晶片連接部 之可靠性高，高生產力之半導體裝置。 按，於以上之實施例，在半導體晶片5之電極終端區 域5 a形成面，排列銲錫終端區域6所形成構造之半導體 本紙張尺度適用中國國家標準（CNS)A4規格（210 x 297公釐） 一 -----裝--------訂---------線 {請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 4^9 88 ^ A7 B7 五、發明說明（10 ) 裝置做了說明’但是終端區域之排列爲並非限於2列’也 可配設複數列之終端區域。並且’凸塊爲配設成區域（ area )多數列之裝置時’縮短樹脂材料之塡充時間之效果 爲大，尤其第8圖所示’終端區域6係配置在半導體晶片 5之電極終端區域形成面之全面（總區域）之裝置時，具 有顯著之效果。 又，作爲配線基板7，係並非限於如玻璃_環氧配線 基板之樹脂系，也可以使用如氧化鋁系或氮化鋁系之陶瓷 系之配線基板。並且，在配線基板之連接終端區域上，也 可以設如銲錫之低熔點金屬之構造，並且，並非將銲錫終 端區域在半導體晶片側也可以形成於配線基板側。 由以上之說明就可淸楚，若依據本發明將對於半導體 元件與配線基板間隙部之樹脂材料之塡充，可在短時間結 束，由樹脂密封層（朝下塡充）緩和熱應力，將浮片晶片 連接部之可靠性高之半導體裝置，以高生產力及低成本獲 得。 又，本發明之半導體裝置，係因樹脂材料之塡充可在 短時間完成，所以，在樹脂開始硬化反應之前，塡充提高 溫度降低黏度之樹脂材料，並且，可達成提升生產力。 圖式之簡單說明 第1圖係將本發明之半導體裝置之構造以模式表示之 圖。 第2圖係於本發明之半導體裝置，爲了說明凸塊之平 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公爱） 13 --------------裝-----.—訂---------線 <請先閲讀背面之注意事項再填寫本頁> 經濟部智慧財產局員工消費合作社印製 449881 ΑΊ _________Β7_______ 五、發明說明（π ) 均節距所用之半導體元件之平面圖。 第3圖係於浮片晶片連接體，表示配線基板之終端區 域徑A與間隙之大小Η之關係之圖表。 第4圖係於浮片晶片連接體，表示凸塊徑β與間隙大 小Η之關係之圖表。 第5圖係於浮片晶片連接體之樹脂材料之填充，半導 體元件與配線基板之間隙大小Η，與塡充時間之關係之圖 表。 第6圖係表示有關本發明之半導體裝置之第1實施例 之剖面圖。 第7圖係於第1實施例，表示終端區域之配設狀態之 半導體晶片之平面圖。 第8圖係於第2實施例，表示終端區域之配設狀態之 半導體晶片之平面圖。 第9圖係將朝下塡充所需之液狀樹脂材料之注入，塡 充方法以模式表示之圖= 主要元件對照表 ---------------裝·-------訂·-------_線 (請先閱讀背面之注*Ϋ項再填寫本頁) 1,6,14 凸塊 5、1 1 半導體晶片 7、1 2、3 配線基板 7 b 外部連接終端區域 11a 電極終端區域 13 液狀樹脂材料 本紙張尺度適用中國國家標準（CNS)A4規格（210 x 297公釐） .14-

Claims (1)

  1. A8 B8 C8 D8 A4988 、申請專利範圍 1 . 一種半導體裝置，其係備有： (請先閱讀背面之注音？事項再填寫本頁) 在絕緣基板之至少一方之主面形成配線層及連接端子 之配線基板，與 在此配線基板之上述主面以面朝下搭載之半導體元件 ，與 上述半導體元件之電極端子彤成面配設成複數列，連 接上述半導體元件與上述配線基板之終端區域，與 上述半導體元件與上述配線基板之間隙部所塡充之樹 脂密封層， 將上述半導體元件與上述配線基板之間隙之大小之平 均（平均間隙）視爲Η，將上述終端區域之配設之配設節 距之平均（平均節距）視爲Ρ，將上述間隙之偏差視 爲D時，具有以（1 )式所表示之平均間隙 P/4-D/2SHSP/4 + D/ 2 經濟部智慧財產局員工消費合作社印製 .2.·. ·如申請專利範圍第1項之半導體裝置，其中上述 終端區域爲配設成區域狀》 3 .如申請專利範圍第1項之半導體裝置，其中上述 終端區域爲銲錫終端區域。 4 .如申請專利範圍第1項之半導體裝置，其中上述 終端區域之配設節距爲沿著構成上述樹脂密封層塡充樹脂 材料方配設之終端區域列間之間隔。 5 .如申請專利範圍第1項之半導體裝置，其中上述 -15- 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） !^ ^49881 篮 1 C8 D8 六、申請專利範圍 終端區域之平均節距爲6 0〜2 5 0 。 經濟部智慧財產局員工消費合作社印製 ---------·*!.! --------訂---------線 (請先閱讀背面之ί£意事項再填寫本頁) -16- 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐）
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