CN109863594B - 具有颗粒粗糙化表面的封装半导体装置 - Google Patents

具有颗粒粗糙化表面的封装半导体装置 Download PDF

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CN109863594B
CN109863594B CN201780065757.0A CN201780065757A CN109863594B CN 109863594 B CN109863594 B CN 109863594B CN 201780065757 A CN201780065757 A CN 201780065757A CN 109863594 B CN109863594 B CN 109863594B
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semiconductor device
packaged semiconductor
lead frame
particles
polymer
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CN109863594A (zh
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维卡斯·古普塔
丹尼尔·勇·林
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Texas Instruments Inc
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Texas Instruments Inc
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Abstract

一种封装半导体装置(200)，其具有在引线框架(203)的一部分上的颗粒粗糙化表面(202)，所述颗粒粗糙化表面能改进模制化合物(112)与所述引线框架(203)之间的粘附性。一种封装半导体装置(200)，其具有在引线框架(203)的一部分上的颗粒粗糙化表面(202)，所述颗粒粗糙化表面能改进模制化合物(112)与所述引线框架(203)之间的粘附性，所述封装半导体装置还具有回焊壁(210)，所述回焊壁环绕将半导体装置(110)耦接到所述引线框架(203)的焊接点(208)的一部分。一种封装半导体装置(200)，其具有回焊壁(210)，所述回焊壁环绕将半导体装置(110)耦接到引线框架(203)的焊接点(208)的一部分。

Description

具有颗粒粗糙化表面的封装半导体装置
技术领域
本公开涉及封装半导体装置领域。更具体地，本公开涉及模制化合物与引线框架之间具有改进的粘附性的封装半导体装置。
发明内容
以下呈现简化概述，以便提供对本公开的一或多个方面的基本理解。此概述并非本公开的广泛概述，并且既不旨在标识本公开的关键或重要元素，也不旨在描绘其范围。实际上，概述的主要目的是以简化形式呈现本公开的一些概念，作为稍后呈现的更详细描述的序言。
一种封装半导体装置，其在引线框架的具有模制化合物的一部分上具有颗粒粗糙化表面。一种封装半导体装置，其在引线框架的具有模制化合物的一部分上具有颗粒粗糙化表面，所述封装半导体装置还具有回焊壁，所述回焊壁环绕焊接点的将半导体装置耦接到所述引线框架的一部分。所述颗粒粗糙化表面可以有助于所述模制化合物与所述引线框架之间的粘附性。
一种封装半导体装置，其具有引线框架和半导体装置。焊接点耦接在所述引线框架与所述半导体装置上的端子之间。回焊壁在所述引线框架的一部分上并且与所述焊接点接触。模制化合物覆盖所述半导体装置、所述引线框架、所述焊接点和所述回焊壁的部分。
附图说明
图1A是封装半导体装置的横截面。
图1B是图1A的封装半导体装置中的引线框架的顶视图。
图2A和2B是具有引线框架的封装半导体装置的横截面，所述引线框架具有回焊壁和颗粒粗糙化表面区域。
图3A和3B是回焊壁的视图。
图4是具有回焊壁和颗粒粗糙化表面的引线框架的顶视图。
图5A和5B是引线框架和半导体装置的横截面视图，示出半导体装置与引线框架的附接。
图6是具有颗粒粗糙化表面的引线框架的横截面视图
图7A和7B是引线框架的横截面视图，在所述引线框架的底侧上具有印刷电路板焊盘。
图8A、8B和8C是具有根据实施例形成的回焊壁的引线框架的横截面视图。
图9A、9B和9C是具有颗粒粗糙化表面、回焊壁和在底侧上形成的印刷电路板焊盘的封装半导体装置的横截面视图。
图10是示出具有在引线框架的顶侧上的颗粒粗糙化表面和焊盘且具有在封装半导体装置的底侧上的印刷电路板焊盘的封装半导体装置的横截面视图。
图11A至11C是示出使用喷墨印刷形成颗粒粗糙化表面和回焊壁的主要制造步骤的横截面视图。
图12A和12B是示出使用喷墨印刷在引线框架的底侧上形成印刷电路板焊盘的主要制造步骤的横截面视图。
图13A至13C是示出使用丝网印刷形成颗粒粗糙化表面和回焊壁的主要制造步骤的横截面视图。
图14A和14B是示出使用丝网印刷在引线框架的底侧上形成印刷电路板焊盘的主要制造步骤的横截面。
具体实施方式
参考附图来描述本公开的实施例。各图未按比例绘制，且各图仅提供来说明本公开。下文参考用于说明的实例应用来描述实施例的若干方面。应理解，阐述了许多具体细节、关系和方法以提供对本公开的理解。然而，相关领域的技术人员应容易认识到，可以在没有一或多个具体细节的情况下或利用其它方法实践本公开。在其它情况下，未详细展示众所周知的结构或操作以避免混淆本公开。实施例不受所示出的动作或事件的排序限制，因为一些动作可以按不同的顺序发生和/或与其它动作或事件同时发生。此外，并非所有示出的动作或事件都是实现方法所必需的。
图1A中以横截面示出封装半导体装置100。半导体装置110可以是任何半导体装置，例如集成电路、晶体管或二极管。半导体装置110附接到引线框架105，并且由模制化合物112覆盖以形成封装半导体装置100。半导体装置封装可以是任何封装形式，例如双列直插式封装(DIP)、四边扁平无引脚(QFN)封装或倒装芯片小外形晶体管(FCSOT)封装或径向封装。图1B示出封装半导体装置100中的引线框架105的顶视图。引线框架105由多个引线102组成，在所述引线上形成焊盘104。半导体装置110通过焊接点107粘结到引线框架105，所述焊接点形成于连接到半导体装置110上的输入/输出盘的金属柱108与焊盘104之间。引线框架105中具有焊盘104的引线102的数目可以根据安装半导体装置110所需的焊接点107的数目而变化。
另一实施例将引线框架的焊盘104直接连接到半导体装置上的输入/输出页。
图1A中引线框架105的横截面是沿着跨越图1B顶视图的短划线。
在图1A的封装半导体装置100的横截面中，焊盘104由焊料容易使其湿润的材料制成。焊接点107形成于焊盘104与金属柱108之间，所述金属柱连接到半导体装置109的输入/输出(I/O)端子。金属柱108通常由导电材料制成，例如铜、金或焊料。此组合件的部分由模制化合物112覆盖以形成封装半导体装置100。当模制化合物112由于粘附性差而从引线框架105分层时，可能发生封装半导体装置110的可靠性失效。为了改进引线框架105的表面的粘附部分，可以使用例如湿式化学蚀刻来粗糙化。
如上所述，半导体装置110安装在引线框架105的第一侧(顶侧)上。印刷电路板(PCB)焊盘106可以形成于引线框架105的第二侧(底侧)上，以便于将封装半导体装置100焊接到下层PCB上的引线。
引线框架105的顶侧上的焊盘104和引线框架105的底侧上的PCB焊盘106通常通过在制造引线框架105期间使用掩模工艺电镀例如涂覆钯的镍等可焊金属而以额外的成本形成。
图2A和2B示出具有半导体装置110的封装半导体装置200的横截面，所述半导体装置通过焊接点208附接到引线框架203。部分或完全围绕焊接点208的回焊壁210在焊接点208形成期间限制焊料的侧向回焊，并因此形成较高的焊接点208。焊接点208在引线框架203与连接到上层半导体装置110上的输入/输出(I/O)端子的铜柱108之间形成电连接。通过将含颗粒的聚合物材料粘结到引线框架203的表面，形成邻近引线框架203的表面上的回焊壁210形成的颗粒粗糙化表面202。引线框架203、回焊壁210、焊接点208、铜柱108、颗粒粗糙化表面202以及半导体装置110的组合件由模制化合物112覆盖以形成封装半导体装置200。
图4示出引线框架203的顶视图。引线框架203由具有颗粒粗糙化表面202的多个引线205组成。在引线205上邻近颗粒粗糙化表面202还可以形成回焊壁210。
颗粒粗糙化表面202可以是含颗粒的聚合物材料，其喷墨印刷或丝网印刷到引线框架203的邻近焊接点208的表面的一部分上。聚合物材料可以是聚酰亚胺或环氧树脂。在一个实例中，颗粒粗糙化表面202包含具有聚合物材料的油墨残余物。油墨残余物是响应于从喷墨打印机印刷具有聚合物材料的油墨而形成，其随后经过固化以形成具有聚合物材料的油墨残余物。形成颗粒粗糙化表面202的颗粒通常是非金属的，以避免形成短路。颗粒大小可以在纳米到微米的范围内。与用于喷墨可印刷油墨相比，较大大小的颗粒可用于丝网印刷浆料。颗粒可以规则地成形，例如球形或椭圆形，或者可以具有不规则的形状。
颗粒粗糙化表面202提供模制化合物112与引线框架203之间改进的粘附性。改进的粘附性显著减少或消除封装半导体装置200因模制化合物112与引线框架203分层而导致的失效。
如图3A和3B所示，回焊壁210可以完全围绕焊接点208，或可以将焊料回焊限制在至少两侧上。当形成焊接点208时，焊料壁210的内表面214限制焊料的横向流动，从而形成较高的焊接点208。较高的焊接点208增大了半导体装置210与引线框架203之间的距离215。由于半导体装置110与其所附接的下层引线框架203之间的热膨胀不匹配(热膨胀系数(CTE)不匹配)，距离的增大减小了焊接点208上的应力。在某些情况下，特别是极端温度下，热膨胀不匹配会导致焊接点失效。
回焊壁210可以由例如聚酰亚胺、聚酯或环氧树脂的聚合物材料形成，或者可以由包含非金属或金属颗粒的聚合物材料形成。嵌入聚合物中的颗粒增强了回焊壁210。当颗粒由可焊金属形成时，焊接点208中的焊料可以粘结到颗粒上并增加焊接点208的强度。更强的焊接点208可以减少焊接点208由于机械力或热应力而导致的失效率。可焊金属可以是例如铜、银、金、铂、镍、钯、黄铜或其合金的金属，其在回焊期间容易被熔融焊料润湿。
图3A和3B示出实例回焊壁210的透视图。回焊壁具有厚度219。虽然图3A和3B中描绘了圆形和矩形的回焊壁210，但是也可以使用其它形状，例如椭圆形、八边形、正方形以及其它形状。如图3A所示，回焊壁210可以圆形形状完全围绕焊接点，或如图3B所示，可以将焊接点208限制在矩形的四侧上。图2A和2B中的回焊壁210的横截面是沿着图3A和3B中的短划线2A和2B截取的。
图5A和5B是示出在半导体装置110与引线框架203之间形成焊接点的横截面。如图5A所示，将从半导体装置110上的I/O向下突出的铜柱108顶部上的焊料盖111置于回焊壁210内侧，随后使焊料回焊并在铜柱108与引线框架203的表面之间形成焊接点208。在如图5B所示的第一替代过程中，可以首先用焊膏113填充回焊壁210之间的空腔，并使铜柱108的顶部与焊膏113接触，随后使焊膏113回焊并形成焊接点208。在第二替代过程中，可以用焊膏113填充回焊壁210之间的空腔，并使具有焊料盖111的铜柱108与焊膏113接触，随后使焊膏113回焊并形成焊接点208。
选择焊料盖111中焊料的体积或回焊壁210之间的空腔内部的焊膏113的体积，使得焊接点208至少与焊料壁210一样高。优选地，选择焊料111、113的体积，使得焊接点的高度超过焊料壁的高度。可以通过增加回焊壁210的高度来增加焊接点208的高度。增加焊接点208的高度可以改进焊接点的可靠性。
可以使用喷墨印刷将含颗粒的油墨分配到引线框架603的表面上来形成图6中的颗粒粗糙化表面202。油墨可以由分散于例如聚酰亚胺或环氧树脂的树脂604中的颗粒605组成。在将油墨分配到表面上之后，可以在约80℃至300℃的温度下热固化油墨以驱除溶剂，从而形成颗粒粗糙化表面202。
替代地，可以使用丝网印刷将丝网印刷浆料施加到引线框架603的表面上。丝网印刷浆料可以由分散于例如聚酰亚胺或环氧树脂的树脂604中的颗粒203形成。在将丝网印刷浆料分配到表面上之后，可以在约180℃至300℃的温度下热固化丝网印刷浆料以驱除溶剂，从而形成颗粒粗糙化表面202。
如图7A和7B所示，可以在引线框架703的底侧上形成PCB焊盘702和705。图7A示出使用焊膏704形成的PCB焊盘702。图9A所示的是封装半导体装置900，其具有使用焊膏704在封装半导体装置900的底侧上形成的PCB焊盘702。图7B示出使用其中分散有可焊颗粒708的焊膏704在引线框架703的底侧上形成的PCB焊盘705。图9B所示的是封装半导体装置901，其具有使用其中分散有可焊颗粒708的焊膏704在其底侧上形成的PCB焊盘705。可焊颗粒708可以由例如银、金、铂、镍、钯、黄铜或其合金的金属形成。可焊颗粒708能增强引线框架703的底侧上的PCB焊盘705与印刷电路板上的电引线之间形成的焊接点。使用喷墨印刷或丝网印刷在引线框架903的底侧上形成PCB焊盘702和705消除了在引线框架903的制造期间电镀这些焊盘的昂贵步骤。
图8A、8B和8C示出几个回焊侧壁810的选项。图8A示出由例如聚酰亚胺、环氧树脂或聚酯的聚合物材料802组成的回焊侧壁810。图9A所示的是封装半导体装置900，其具有由聚合物材料802组成的回焊侧壁810。图8B示出由分散于聚合物材料802中的可焊颗粒804组成的回焊侧壁810。图9B示出封装半导体装置901，其具有由分散于聚合物材料802中的可焊颗粒804组成的回焊侧壁810。图8C示出由分散于聚合物材料802中的可焊颗粒804组成的回焊侧壁810。在引线框架903的表面上于回焊壁810之间形成由分散于助焊剂811中的可焊颗粒809组成的焊盘806。图9C示出封装半导体装置905，其具有由分散于聚合物材料802中的可焊颗粒804组成的回焊侧壁810，且具有在引线框架903的表面上于回焊壁810之间的由分散于助焊剂811中的可焊颗粒809组成的焊盘806。在一个实例中，在表面上沉积分散于助焊剂811中的可焊颗粒804，随后附接焊接点208。
如图10所示，可以在半导体装置110所安装于的引线框架903的顶侧上形成焊盘910以形成封装半导体装置907。可以使用与用于在引线框架903的底侧上形成PCB焊盘702和705的相同材料和过程形成这些顶侧的焊盘910。
在图11A至11C和图13A至13C中以横截面描述了用于形成颗粒粗糙化表面区域202和回焊壁810的主要步骤。
图11A至11C示出使用喷墨印刷在引线框架903上形成回焊壁809和颗粒粗糙化表面202的第一方法。
在图11A中，使用喷墨打印机174将回焊壁809印刷到引线框架903的表面上。
图11B示出使用喷墨打印机176在引线框架903上沉积颗粒粗糙化表面162。油墨可以与用于印刷回焊壁810的油墨相同或其可以是不同的油墨。
图11C示出在约80℃至300℃的温度下烧结以形成颗粒粗糙化表面202并形成回焊壁810之后的结构。
图13A至13C示出使用丝网印刷在引线框架903上形成颗粒粗糙化表面202和回焊壁810的第二方法。
在图13A中，将第一漏印板180放置在引线框架903的表面上，并且向待形成颗粒粗糙化表面202的区域施加浆料182。在施加第一浆料182之后移除第一漏印板180。
在图13B中，将第二漏印板184放置在引线框架903的表面上，并且向待形成回焊壁810的区域施加第二浆料186。在施加第二浆料184之后移除第二漏印板184。
图13C示出在约80℃至300℃的温度下烧结浆料以形成回焊壁810和颗粒粗糙化表面202之后的引线框架903。
图13A至13C所示的方法使得回焊壁810和颗粒粗糙化表面202能形成有不同的厚度并且能使用不同的浆料形成。替代地，可以使用具有用于回焊壁810和颗粒粗糙化表面202两者的开口的一个漏印板。在此情况下，可以使用相同的浆料形成回焊壁810和颗粒粗糙化表面202两者。可以使用此方法以降低制造成本。
在图12A和12B以及图14A和14B中以横截面描述了用于在引线框架903的背侧上形成PCB焊盘705的主要步骤。
图12A和12B示出使用喷墨印刷在引线框架903的底侧上形成PCB焊盘705的步骤。如图12A所示，使用喷墨打印机178印刷PCB焊盘701。图12B示出在约80℃至300℃的温度下烧结油墨以驱除溶剂并固化油墨树脂之后的PCB焊盘705。
图14A和14B示出使用丝网印刷在引线框架903的背侧上形成PCB焊盘705。
在图14A中，将漏印板190应用于引线框架903的底侧，所述漏印板具有将形成PCB焊盘705的开口。在施加浆料704之后移除漏印板190。
图14B示出在约80℃至300℃的温度下烧结浆料192以在引线框架903的底侧上形成PCB焊盘705之后的引线框架903。
在各种实例实施例中，以相对意义使用例如顶部、底部等的术语来描述各种组件的位置关系。这些术语参考附图中所示的组件的位置使用，而不是参考重力场的绝对意义。例如，即使封装半导体装置以相对于图中所示的位置倒置的位置放置，引线框架105的顶侧仍然可以适当地称为引线框架的顶侧。
虽然上文已经描述了本公开的各种实施例，但是应理解，它们仅以实例的方式呈现，而不是限制。在不脱离本公开的精神或范围的情况下，可以根据本文的公开内容对所公开的实施例进行许多改变。因此，本公开的广度和范围不应受任何上述实施例的限制。实际上，应根据所附权利要求书和其等同物来限定本公开的范围。

Claims (20)

1.一种封装半导体装置，其包括：
引线框架；
半导体装置；
焊接点，其耦接在所述引线框架与所述半导体装置上的端子之间；
颗粒粗糙化表面，其在所述引线框架的表面的一部分上并且由含第一颗粒的第一聚合物组成；以及
模制化合物，其覆盖所述半导体装置、所述引线框架和所述颗粒粗糙化表面的部分。
2.根据权利要求1所述的封装半导体装置，其中所述第一聚合物选自由聚酰亚胺、环氧树脂和聚酯聚合物组成的群组。
3.根据权利要求1所述的封装半导体装置，其中所述第一颗粒是非金属颗粒。
4.根据权利要求1所述的封装半导体装置，其中所述颗粒粗糙化表面覆盖所述引线框架的所述表面的邻近所述焊接点的部分。
5.根据权利要求1所述的封装半导体装置，其包括：
环绕所述焊接点的回焊壁，其中所述回焊壁是选自由聚酰亚胺、环氧树脂和聚酯组成的群组的第二聚合物。
6.根据权利要求5所述的封装半导体装置，其中所述回焊壁在所述焊接点的至少两个相对侧上环绕所述焊接点。
7.根据权利要求5所述的封装半导体装置，其中所述回焊壁完全环绕所述焊接点。
8.根据权利要求5所述的封装半导体装置，其包括含第二颗粒的第二聚合物。
9.根据权利要求5所述的封装半导体装置，其中所述焊接点的高度至少与所述回焊壁的高度一样高。
10.根据权利要求1所述的封装半导体装置，其包括在所述封装半导体装置的底侧上的印刷电路板焊盘。
11.根据权利要求10所述的封装半导体装置，其中所述印刷电路板焊盘是焊膏。
12.根据权利要求10所述的封装半导体装置，其中所述印刷电路板焊盘是含可焊颗粒的焊膏，所述可焊颗粒由选自由银、铜、镍、钯、铂、锡、金及其合金组成的群组的金属形成。
13.根据权利要求1所述的封装半导体装置，其进一步包括耦接在所述焊接点与所述端子之间的金属柱。
14.一种封装半导体装置，其包括：
引线框架；
半导体装置；
焊接点，其耦接在所述引线框架与所述半导体装置上的端子之间；
颗粒粗糙化表面，其在所述引线框架的表面的一部分上，由含第一颗粒的第一聚合物组成；
回焊壁，其围绕所述焊接点并且由含第二颗粒的第二聚合物组成；以及
模制化合物，其覆盖所述半导体装置、所述引线框架、所述回焊壁和所述颗粒粗糙化表面的部分。
15.根据权利要求14所述的封装半导体装置，其中所述第一聚合物和所述第二聚合物选自由聚酰亚胺、环氧树脂和聚酯聚合物组成的群组。
16.根据权利要求14所述的封装半导体装置，其中所述第一聚合物和所述第二聚合物选自由聚酰亚胺、环氧树脂和聚酯聚合物组成的群组，并且其中所述第一和第二颗粒是非金属颗粒。
17.根据权利要求14所述的封装半导体装置，其中所述第一聚合物和所述第二聚合物是相同的聚合物，并且其中所述第一颗粒和所述第二颗粒是相同的非金属颗粒。
18.根据权利要求14所述的封装半导体装置，其中所述第一聚合物和所述第二聚合物选自由聚酰亚胺、环氧树脂和聚酯聚合物组成的群组，并且其中所述第一颗粒是非金属颗粒，并且其中所述第二颗粒是由选自由银、铜、镍、钯、铂、锡、金及其合金组成的群组的可焊金属组成的金属颗粒。
19.根据权利要求14所述的封装半导体装置，其中所述回焊壁环绕所述焊接点的至少两个相对侧。
20.根据权利要求14所述的封装半导体装置，其包括在所述封装半导体装置的底侧上由焊膏组成的印刷电路板焊盘。
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