JP7353794B2 - 半導体装置、その製造方法、及びモジュール - Google Patents
半導体装置、その製造方法、及びモジュール Download PDFInfo
- Publication number
- JP7353794B2 JP7353794B2 JP2019090478A JP2019090478A JP7353794B2 JP 7353794 B2 JP7353794 B2 JP 7353794B2 JP 2019090478 A JP2019090478 A JP 2019090478A JP 2019090478 A JP2019090478 A JP 2019090478A JP 7353794 B2 JP7353794 B2 JP 7353794B2
- Authority
- JP
- Japan
- Prior art keywords
- opening
- lead frame
- semiconductor device
- metal layer
- pillar
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000004065 semiconductor Substances 0.000 title claims description 87
- 238000004519 manufacturing process Methods 0.000 title claims description 17
- 229910052751 metal Inorganic materials 0.000 claims description 78
- 239000002184 metal Substances 0.000 claims description 78
- 229920005989 resin Polymers 0.000 claims description 51
- 239000011347 resin Substances 0.000 claims description 51
- 238000007788 roughening Methods 0.000 claims description 24
- 238000000034 method Methods 0.000 claims description 22
- 239000000758 substrate Substances 0.000 claims description 21
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 10
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 9
- 229910052802 copper Inorganic materials 0.000 claims description 9
- 239000010949 copper Substances 0.000 claims description 9
- 229910052759 nickel Inorganic materials 0.000 claims description 5
- 239000007788 liquid Substances 0.000 claims description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 2
- 229910052718 tin Inorganic materials 0.000 claims description 2
- 239000011135 tin Substances 0.000 claims description 2
- 238000005304 joining Methods 0.000 claims 1
- 239000010410 layer Substances 0.000 description 103
- 229910000679 solder Inorganic materials 0.000 description 18
- 238000010586 diagram Methods 0.000 description 8
- 230000001681 protective effect Effects 0.000 description 8
- 229910000881 Cu alloy Inorganic materials 0.000 description 4
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 4
- 230000007547 defect Effects 0.000 description 4
- 230000003746 surface roughness Effects 0.000 description 4
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000011229 interlayer Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000011800 void material Substances 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 238000010248 power generation Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 229920001187 thermosetting polymer Polymers 0.000 description 2
- 229910001316 Ag alloy Inorganic materials 0.000 description 1
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 229910000640 Fe alloy Inorganic materials 0.000 description 1
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910001297 Zn alloy Inorganic materials 0.000 description 1
- 229910001093 Zr alloy Inorganic materials 0.000 description 1
- QCEUXSAXTBNJGO-UHFFFAOYSA-N [Ag].[Sn] Chemical compound [Ag].[Sn] QCEUXSAXTBNJGO-UHFFFAOYSA-N 0.000 description 1
- WZKOTKLBZAKWFH-UHFFFAOYSA-N [Zn].[Cu].[Sn].[Cr] Chemical compound [Zn].[Cu].[Sn].[Cr] WZKOTKLBZAKWFH-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000007767 bonding agent Substances 0.000 description 1
- 238000000748 compression moulding Methods 0.000 description 1
- IYRDVAUFQZOLSB-UHFFFAOYSA-N copper iron Chemical compound [Fe].[Cu] IYRDVAUFQZOLSB-UHFFFAOYSA-N 0.000 description 1
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical class [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 description 1
- XTYUEDCPRIMJNG-UHFFFAOYSA-N copper zirconium Chemical compound [Cu].[Zr] XTYUEDCPRIMJNG-UHFFFAOYSA-N 0.000 description 1
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000006355 external stress Effects 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 229910001195 gallium oxide Inorganic materials 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
- 238000005488 sandblasting Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 238000001721 transfer moulding Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49861—Lead-frames fixed on or encapsulated in insulating substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3142—Sealing arrangements between parts, e.g. adhesion promotors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
- H01L21/485—Adaptation of interconnections, e.g. engineering charges, repair techniques
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49866—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers characterised by the materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16245—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Lead Frames For Integrated Circuits (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Description
本実施の形態に係る半導体装置内のリードフレームの製造方法の一例について説明する。まず、図6(a)に示すように、金属板13を用意する。金属板13の上下にレジストマスク17aをパターン形成し、レジストマスク17aをマスクとしてエッチング等により金属板13に開口部を形成する。その後、図6(b)に示すように、レジストマスク17aを除去し、開口部が形成された金属板がリードフレーム20となる。金属板13の材料は、例えば、上記に示すリードフレームの材料を用いることができる。金属板13の厚さは、例えば、100~200μm程度とすることができる。
リードフレーム20上に半導体基板10やピラー55等を含む構造体が設けられた半導体装置の製造方法について説明する。
図11は、本実施の形態の一態様の半導体装置を備えたモジュールのレイアウト図である。モジュール内の半導体装置(半導体チップ74)は、リードフレーム20、ピラー55を備えている。
本実施の形態の一態様の半導体装置を備えるパッケージについて、図14を用いて説明する。図14(a)は、本実施の形態の一態様の半導体装置を備えるパッケージの斜視図であり、図14(b)は、当該パッケージの底面図である。
実施の形態の一態様の半導体装置を備えるモジュールやパッケージは、例えば、スマートフォン、タブレット端末、パソコン、ウェアラブル端末、データ端末、バーコードスキャナ、バッテリー充電器、監視カメラ、ガス警報器、医療機器、ヘルスケア機器、ロボット等の産業機器、カーナビゲーション、エンジンコントロールユニット、電動パワーステアリング、車載カメラモジュール等の車載機器、TV、ホームシアター、オーディオ等のAV機器、エアコン、冷蔵庫、炊飯器、ドライヤー等の家電製品等、様々な用途において用いることができる。実施の形態の一態様の半導体装置を備えることで不良を低減した高信頼性を確保した上記機器・製品を提供することができる。
上記のように、いくつかの実施の形態について記載したが、開示の一部をなす論述及び図面は例示的なものであり、限定するものであると理解すべきではない。この開示から当業者には様々な代替実施の形態、実施例及び運用技術が明らかとなろう。このように、本実施の形態は、ここでは記載していない様々な実施の形態等を含む。
Claims (9)
- 第1開口部、および前記第1開口部の上方に形成された第2開口部を備えるリードフレームと、
前記第1開口部に充填される樹脂と、
半導体素子と、
前記リードフレームと前記半導体素子とを電気的に接続し、複数の金属層を有するピラーと、
を備え、
前記第2開口部の幅は、前記第1開口部の幅よりも小さく、
前記第1開口部及び前記第2開口部のそれぞれが、丸みを帯びた側壁面を有し、
前記ピラーの一端が前記リードフレームに面し、前記ピラーの他端が前記半導体素子に面しており、
断面視において、前記複数の金属層の一の外側の両側端部が、それぞれ前記ピラーの一端に向けて前記金属層の中心領域よりも突出し、かつ、丸みを帯びた形状を有し、
前記金属層の底面が、前記金属層の両側端部の間に形成され、
前記金属層の両側端部の表面は、断面において、前記底面に近づくほど急峻になるように形成されている、半導体装置。 - 前記第2開口部の深さは、前記第1開口部よりも浅い、請求項1に記載の半導体装置。
- 前記第2開口部は、前記第1開口部よりも前記リードフレームの外端部に近い、請求項2に記載の半導体装置。
- 前記半導体装置の外端部は、前記第2開口部で囲まれている、請求項1~3のいずれか1項に記載の半導体装置。
- 前記ピラーは、銅、ニッケル、錫、及び銀からなる群から選択される少なくとも1種類を含む、請求項1~4のいずれか1項に記載の半導体装置。
- 請求項1~5のいずれか1項に記載の半導体装置を備えるモジュール。
- 請求項1~5のいずれか1項に記載の半導体装置の製造方法であって、
前記リードフレームに粗化処理を行う工程と、
前記半導体素子を備える半導体基板上に前記ピラーを形成する工程と、
前記リードフレームに前記ピラーを接合する工程と、
樹脂を前記第1開口部に充填する工程と、を有する半導体装置の製造方法。 - 前記粗化処理は、前記第1開口部の側壁面及び前記第2開口部の側壁面に対して行う、請求項7に記載の半導体装置の製造方法。
- 前記粗化処理は、粗化液を塗布する方法、又は粗化液に浸漬する方法により行う、請求項7又は8に記載の半導体装置の製造方法。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2019090478A JP7353794B2 (ja) | 2019-05-13 | 2019-05-13 | 半導体装置、その製造方法、及びモジュール |
US16/867,266 US11652040B2 (en) | 2019-05-13 | 2020-05-05 | Semiconductor device, method of manufacturing semiconductor device, and module |
US18/295,111 US20230238317A1 (en) | 2019-05-13 | 2023-04-03 | Semiconductor device, method of manufacturing semiconductor device, and module |
JP2023149958A JP2023165032A (ja) | 2019-05-13 | 2023-09-15 | 半導体装置、その製造方法、及びモジュール |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2019090478A JP7353794B2 (ja) | 2019-05-13 | 2019-05-13 | 半導体装置、その製造方法、及びモジュール |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2023149958A Division JP2023165032A (ja) | 2019-05-13 | 2023-09-15 | 半導体装置、その製造方法、及びモジュール |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2020188083A JP2020188083A (ja) | 2020-11-19 |
JP7353794B2 true JP7353794B2 (ja) | 2023-10-02 |
Family
ID=73221057
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2019090478A Active JP7353794B2 (ja) | 2019-05-13 | 2019-05-13 | 半導体装置、その製造方法、及びモジュール |
JP2023149958A Pending JP2023165032A (ja) | 2019-05-13 | 2023-09-15 | 半導体装置、その製造方法、及びモジュール |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2023149958A Pending JP2023165032A (ja) | 2019-05-13 | 2023-09-15 | 半導体装置、その製造方法、及びモジュール |
Country Status (2)
Country | Link |
---|---|
US (2) | US11652040B2 (ja) |
JP (2) | JP7353794B2 (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102019115369A1 (de) * | 2019-06-06 | 2020-12-10 | Infineon Technologies Ag | Verfahren zur herstellung eines halbleiter-flip-chip-package |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1999067821A1 (en) | 1998-06-24 | 1999-12-29 | Amkor Technology, Inc. | Plastic integrated circuit package and method and leadframe for making the package |
US20090309201A1 (en) | 2008-06-11 | 2009-12-17 | Nec Electronics Corporation | Lead frame, semiconductor device, method for manufacturing lead frame and method for manufacturing semiconductor device |
JP2011233821A (ja) | 2010-04-30 | 2011-11-17 | Nichia Chem Ind Ltd | 発光装置および発光装置の製造方法 |
JP2013058739A (ja) | 2011-08-17 | 2013-03-28 | Dainippon Printing Co Ltd | 光半導体装置用リードフレーム、樹脂付き光半導体装置用リードフレーム、光半導体装置、および、光半導体装置用リードフレームの製造方法 |
JP2016105432A (ja) | 2014-12-01 | 2016-06-09 | Shマテリアル株式会社 | リードフレームの製造方法 |
US20180190577A1 (en) | 2016-12-30 | 2018-07-05 | Texas Instruments Incorporated | Packaged semiconductor device with a particle roughened surface |
WO2019060496A1 (en) | 2017-09-20 | 2019-03-28 | Texas Instruments Incorporated | ALLOY DIFFUSION BARRIER LAYER |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5784260A (en) * | 1996-05-29 | 1998-07-21 | International Business Machines Corporation | Structure for constraining the flow of encapsulant applied to an I/C chip on a substrate |
US6812552B2 (en) * | 2002-04-29 | 2004-11-02 | Advanced Interconnect Technologies Limited | Partially patterned lead frames and methods of making and using the same in semiconductor packaging |
US6794738B2 (en) * | 2002-09-23 | 2004-09-21 | Texas Instruments Incorporated | Leadframe-to-plastic lock for IC package |
US8008756B2 (en) * | 2006-06-14 | 2011-08-30 | Panasonic Corporation | Heat dissipating wiring board and method for manufacturing same |
JP2017212290A (ja) | 2016-05-24 | 2017-11-30 | Shマテリアル株式会社 | 光半導体装置用リードフレーム、樹脂付きリードフレーム及び光半導体装置、並びにそれらの製造方法 |
JP6985072B2 (ja) | 2017-09-06 | 2021-12-22 | 新光電気工業株式会社 | リードフレーム及びその製造方法 |
-
2019
- 2019-05-13 JP JP2019090478A patent/JP7353794B2/ja active Active
-
2020
- 2020-05-05 US US16/867,266 patent/US11652040B2/en active Active
-
2023
- 2023-04-03 US US18/295,111 patent/US20230238317A1/en active Pending
- 2023-09-15 JP JP2023149958A patent/JP2023165032A/ja active Pending
Patent Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1999067821A1 (en) | 1998-06-24 | 1999-12-29 | Amkor Technology, Inc. | Plastic integrated circuit package and method and leadframe for making the package |
JP2002519848A (ja) | 1998-06-24 | 2002-07-02 | アムコール・テクノロジー・インコーポレイテッド | 集積回路プラスチックパッケージ及びその形成方法、並びにそのパッケージを形成するためのリードフレーム |
US20090309201A1 (en) | 2008-06-11 | 2009-12-17 | Nec Electronics Corporation | Lead frame, semiconductor device, method for manufacturing lead frame and method for manufacturing semiconductor device |
JP2009302209A (ja) | 2008-06-11 | 2009-12-24 | Nec Electronics Corp | リードフレーム、半導体装置、リードフレームの製造方法および半導体装置の製造方法 |
JP2011233821A (ja) | 2010-04-30 | 2011-11-17 | Nichia Chem Ind Ltd | 発光装置および発光装置の製造方法 |
JP2013058739A (ja) | 2011-08-17 | 2013-03-28 | Dainippon Printing Co Ltd | 光半導体装置用リードフレーム、樹脂付き光半導体装置用リードフレーム、光半導体装置、および、光半導体装置用リードフレームの製造方法 |
JP2016105432A (ja) | 2014-12-01 | 2016-06-09 | Shマテリアル株式会社 | リードフレームの製造方法 |
US20180190577A1 (en) | 2016-12-30 | 2018-07-05 | Texas Instruments Incorporated | Packaged semiconductor device with a particle roughened surface |
WO2019060496A1 (en) | 2017-09-20 | 2019-03-28 | Texas Instruments Incorporated | ALLOY DIFFUSION BARRIER LAYER |
JP2020534695A (ja) | 2017-09-20 | 2020-11-26 | 日本テキサス・インスツルメンツ合同会社 | 合金拡散障壁層 |
Also Published As
Publication number | Publication date |
---|---|
US20230238317A1 (en) | 2023-07-27 |
US20200365505A1 (en) | 2020-11-19 |
US11652040B2 (en) | 2023-05-16 |
JP2020188083A (ja) | 2020-11-19 |
JP2023165032A (ja) | 2023-11-14 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US7879653B2 (en) | Leadless semiconductor package with electroplated layer embedded in encapsulant and the method for manufacturing the same | |
US8659151B2 (en) | Semiconductor device and manufacturing method thereof | |
US20090127682A1 (en) | Chip package structure and method of fabricating the same | |
US7459778B2 (en) | Chip on board leadframe for semiconductor components having area array | |
US8350369B2 (en) | High power semiconductor package | |
KR101208332B1 (ko) | 반도체 패키지용 클립 구조 및 이를 이용한 반도체 패키지 | |
JP5227501B2 (ja) | スタックダイパッケージ及びそれを製造する方法 | |
US7834469B2 (en) | Stacked type chip package structure including a chip package and a chip that are stacked on a lead frame | |
US20090278243A1 (en) | Stacked type chip package structure and method for fabricating the same | |
KR20060121823A (ko) | 가역 리드리스 패키지, 및 이를 제조 및 사용하기 위한방법 | |
TWI455269B (zh) | 晶片封裝結構及其製作方法 | |
JP2008103685A (ja) | 半導体装置及びその製造方法 | |
JP2006516832A (ja) | 薄い多重半導体ダイ・パッケージ | |
JP5358089B2 (ja) | 半導体装置 | |
JP2023165032A (ja) | 半導体装置、その製造方法、及びモジュール | |
JP2003174131A (ja) | 樹脂封止型半導体装置及びその製造方法 | |
US7768104B2 (en) | Apparatus and method for series connection of two die or chips in single electronics package | |
US6818999B2 (en) | Semiconductor device having multiple semiconductor chips in a single package | |
US11538734B2 (en) | Power semiconductor package with highly reliable chip topside | |
JP2010087403A (ja) | 半導体装置 | |
JP2007116030A (ja) | 半導体装置とそれを用いた半導体パッケージ | |
TWI559470B (zh) | 無基板的半導體封裝結構及其製造方法 | |
TWI820690B (zh) | 功率模組及其製造方法 | |
CN111564379A (zh) | 芯片的封装方法及芯片结构 | |
CN116759397A (zh) | 一种芯片封装结构及其制备方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20220422 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20230228 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20230314 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20230428 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20230822 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20230920 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 7353794 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |