TW429395B - Microchamber - Google Patents

Microchamber

Info

Publication number
TW429395B
TW429395B TW088106766A TW88106766A TW429395B TW 429395 B TW429395 B TW 429395B TW 088106766 A TW088106766 A TW 088106766A TW 88106766 A TW88106766 A TW 88106766A TW 429395 B TW429395 B TW 429395B
Authority
TW
Taiwan
Prior art keywords
substrate
reference member
gas
gas bearing
bearing
Prior art date
Application number
TW088106766A
Other languages
English (en)
Inventor
John E Davison
Kurt H Weiner
Original Assignee
Ultratech Stepper Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ultratech Stepper Inc filed Critical Ultratech Stepper Inc
Application granted granted Critical
Publication of TW429395B publication Critical patent/TW429395B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4409—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber characterised by sealing means
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70866—Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
TW088106766A 1998-05-05 1999-04-27 Microchamber TW429395B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US09/073,057 US5997963A (en) 1998-05-05 1998-05-05 Microchamber

Publications (1)

Publication Number Publication Date
TW429395B true TW429395B (en) 2001-04-11

Family

ID=22111457

Family Applications (1)

Application Number Title Priority Date Filing Date
TW088106766A TW429395B (en) 1998-05-05 1999-04-27 Microchamber

Country Status (6)

Country Link
US (1) US5997963A (zh)
EP (1) EP1082470A4 (zh)
JP (1) JP2002513856A (zh)
KR (1) KR20010071202A (zh)
TW (1) TW429395B (zh)
WO (1) WO1999057331A1 (zh)

Cited By (2)

* Cited by examiner, † Cited by third party
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US7098991B2 (en) 2002-04-09 2006-08-29 Nikon Corporation Exposure method, exposure apparatus, and method for manufacturing device
TWI816340B (zh) * 2021-08-31 2023-09-21 日商信越工程股份有限公司 工件分離裝置及工件分離方法

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JP2001118783A (ja) 1999-10-21 2001-04-27 Nikon Corp 露光方法及び装置、並びにデバイス製造方法
TW480372B (en) 1999-11-05 2002-03-21 Asm Lithography Bv Lithographic projection apparatus, method of manufacturing a device using the apparatus, and device manufactured according to the method
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JP2002158154A (ja) * 2000-11-16 2002-05-31 Canon Inc 露光装置
JP2002158153A (ja) * 2000-11-16 2002-05-31 Canon Inc 露光装置およびペリクル空間内ガス置換方法
JP2002198277A (ja) * 2000-12-22 2002-07-12 Canon Inc 補正装置、露光装置、デバイス製造方法及びデバイス
JP2002208563A (ja) * 2001-01-09 2002-07-26 Ebara Corp 被加工物の加工装置及び加工方法
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US10503084B2 (en) 2002-11-12 2019-12-10 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
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KR101178754B1 (ko) * 2003-04-10 2012-09-07 가부시키가이샤 니콘 액침 리소그래피 장치용 진공 배출을 포함하는 환경 시스템
KR20170064003A (ko) 2003-04-10 2017-06-08 가부시키가이샤 니콘 액침 리소그래피 장치용 운반 영역을 포함하는 환경 시스템
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US7098991B2 (en) 2002-04-09 2006-08-29 Nikon Corporation Exposure method, exposure apparatus, and method for manufacturing device
TWI816340B (zh) * 2021-08-31 2023-09-21 日商信越工程股份有限公司 工件分離裝置及工件分離方法

Also Published As

Publication number Publication date
WO1999057331A1 (en) 1999-11-11
US5997963A (en) 1999-12-07
EP1082470A1 (en) 2001-03-14
KR20010071202A (ko) 2001-07-28
EP1082470A4 (en) 2003-02-05
JP2002513856A (ja) 2002-05-14

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