TW426580B - In-situ monitoring of linear substrate polishing operations - Google Patents
In-situ monitoring of linear substrate polishing operations Download PDFInfo
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- TW426580B TW426580B TW089100288A TW89100288A TW426580B TW 426580 B TW426580 B TW 426580B TW 089100288 A TW089100288 A TW 089100288A TW 89100288 A TW89100288 A TW 89100288A TW 426580 B TW426580 B TW 426580B
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- substrate
- polishing
- sheet
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- 239000000758 substrate Substances 0.000 title claims abstract description 96
- 238000005498 polishing Methods 0.000 title claims abstract description 77
- 238000012544 monitoring process Methods 0.000 title claims abstract description 32
- 238000011065 in-situ storage Methods 0.000 title 1
- 238000000034 method Methods 0.000 claims abstract description 24
- 230000007246 mechanism Effects 0.000 claims abstract description 7
- 238000001514 detection method Methods 0.000 claims description 13
- 239000000463 material Substances 0.000 claims description 12
- 230000002079 cooperative effect Effects 0.000 claims 2
- PCTMTFRHKVHKIS-BMFZQQSSSA-N (1s,3r,4e,6e,8e,10e,12e,14e,16e,18s,19r,20r,21s,25r,27r,30r,31r,33s,35r,37s,38r)-3-[(2r,3s,4s,5s,6r)-4-amino-3,5-dihydroxy-6-methyloxan-2-yl]oxy-19,25,27,30,31,33,35,37-octahydroxy-18,20,21-trimethyl-23-oxo-22,39-dioxabicyclo[33.3.1]nonatriaconta-4,6,8,10 Chemical compound C1C=C2C[C@@H](OS(O)(=O)=O)CC[C@]2(C)[C@@H]2[C@@H]1[C@@H]1CC[C@H]([C@H](C)CCCC(C)C)[C@@]1(C)CC2.O[C@H]1[C@@H](N)[C@H](O)[C@@H](C)O[C@H]1O[C@H]1/C=C/C=C/C=C/C=C/C=C/C=C/C=C/[C@H](C)[C@@H](O)[C@@H](C)[C@H](C)OC(=O)C[C@H](O)C[C@H](O)CC[C@@H](O)[C@H](O)C[C@H](O)C[C@](O)(C[C@H](O)[C@H]2C(O)=O)O[C@H]2C1 PCTMTFRHKVHKIS-BMFZQQSSSA-N 0.000 claims 1
- 238000004898 kneading Methods 0.000 claims 1
- 230000000737 periodic effect Effects 0.000 claims 1
- 239000012780 transparent material Substances 0.000 claims 1
- 239000010410 layer Substances 0.000 description 7
- 230000008569 process Effects 0.000 description 7
- 239000000126 substance Substances 0.000 description 6
- 230000005540 biological transmission Effects 0.000 description 3
- 238000013461 design Methods 0.000 description 3
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- 229920002635 polyurethane Polymers 0.000 description 3
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- 230000008859 change Effects 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 239000002002 slurry Substances 0.000 description 2
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- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910000420 cerium oxide Inorganic materials 0.000 description 1
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- 239000002344 surface layer Substances 0.000 description 1
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Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/005—Control means for lapping machines or devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B21/00—Machines or devices using grinding or polishing belts; Accessories therefor
- B24B21/04—Machines or devices using grinding or polishing belts; Accessories therefor for grinding plane surfaces
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
- B24B49/02—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation according to the instantaneous size and required size of the workpiece acted upon, the measuring or gauging being continuous or intermittent
- B24B49/04—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation according to the instantaneous size and required size of the workpiece acted upon, the measuring or gauging being continuous or intermittent involving measurement of the workpiece at the place of grinding during grinding operation
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
- B24B49/12—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation involving optical means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Polishing Bodies And Polishing Tools (AREA)
Description
ν 4.26 6 Β 〇 a? Β7 五、發明説明() 相關申諸案: 本申請案係與以下數項申請案有關,即[代理人編號 3486/342001 ]於 1 999年2月4日所提出的美國申請案 "Apparatus and Methods for Chemical Mechanical Polishing with an Advanceable Polishing Sheet";中請號 08/60 5,769,提出於 1996 年 2 月 22 日:申請號 08/4 13,982, 提出於1995年3月28日;申請號09/184,775,提出於199 8 年11月2日;申請號08/689,930,提出於1996年8月26 曰;申請號08/568,188,提出於1995年12月5曰;申請 號08/725,607,提出於1996年10月3曰;及一專利號為 5,846,8 82的美國專利。在此將上述之專利申請案__併入, 以利參考之用α 發明领珐: 本發明係與線性研磨有關,更特定說來,本發明係關 於同步監測之線性基板研磨的設備與方法。 發明背景: 研磨動作的同步監測是有必要的。例如,在化學機械 研磨動作當中,因為研磨速率會隨時間改變1所以決定基 板層何時被研磨至一終點有其必要性。化學機械研磨是一 種利用研磨墊及研磨漿將一基板表面平坦化至一相當均 勻程度的一種方法,其中基板通常都支搏在一可旋轉承載 頭之上、並由_可移動之研磨墊壓住以進行研磨,其中研 第2頁 本紙張尺度遴用中國國家標隼(CNS ) Α4規格(210X2M公釐) (請先閱讀背面之注意.事項再填寫本頁) -- 訂 經濟部智慧財產局®工消費合作社印製 經濟部智慧財凌局員工消費合作社印製 .4 26 5 8 0 A7 __-__—iZ__一 五、發明説明() 磨塾·一般都包含一研磨薄片,另在研磨整上可以加入一研 磨化學溶液(漿)’以輔助研磨過程之造行》 發明目的及概述: 本發明之特徵在於一基板研磨之設計(設備及方法)1 其中一研磨薄片的一研磨表面由一驅動裝置沿一大致為 線性方向將之驅動,一基板之一表面由一研磨頭使之靠住 該研磨薄片的該研磨表面,—監控系統則透過該研磨薄片 探測該基板3 各實施例可包含一或更多個以下特徵。 在一實施例中’監控系統至少包含一光源,用以產生 光’並將該光導經該研磨薄片至該基板;_偵測器,用以 偵測該基板反射回來的光。本實施例中,該研磨薄片包含 至少對於該光源所生的光為半透明的一區域,該研磨薄片 可由至少對於該光源所生的光為半透明的材料所製成。易 研磨薄片可由對於該光源所生的光大致為透明的 材料所製成,且該研磨薄片可包含一至少對於該光源所產 生疋光為半透明的分立區域’該分立區域大致延伸在該研 磨薄片之整個長度上’或也可只延伸在該研磨薄片之部份 長度上。 在另—實施例中,該研磨薄片之該研磨表面至少包含 複數個技影表面特性區(projecting surface features),各表 寺區之間以大致相等之間隔隔開,其中表面特性區的 透光性必須是足夠的,以利監控系統探測該基板。換言 適用中®i"^iYCNS ) A4规格(210 X 297公釐) ' ' - (锖先閱讀背面之注意事項再填寫本頁) i -β 4^6580
--1---;--I--士衣-- (請先閲讀背面之注意事項再填寫本頁) 之’鄰近之表面特性區在該研磨表面上除了 一探測區域外 具有相當均等的間隔,且在此探測區域內相鄰表面特性區 之間的間隔較該研磨表面其它地方的間隔為大,以使該監 控系統能探測該墓板。 監控系統可以配合該研磨頭及該驅動機械裝置以週 期性地探測該基板,一旋轉機械裝置則可在一平面上相對 於該基板旋轉該線性驅動機械裝置。 其它之特徵及優點在閱讀過以下之詳細說明、圖示及 專利申請範圍後將會變得更加明顯。 凰_^簡軍纷afl : 訂 第1 A及I B圖分別為一線性基板研磨設備之立體圖及側面 剖視圖,其中該設備包含一用以同步監控研磨過程 之系统; 第2圖為第1 a及1 B圖之線性基板研磨設備之部份側面剖 視圖; 第3A圖為一線性基板研磨設備之側面剖視圖,其中該設 備包含一具有一透光區域的線性研磨薄片; 經濟部智慧財產局員工消費合作社印製 第3B圖為一線性研磨薄片之俯瞰示意圖,其中該薄片在 其長度方向上具有一長型光穿透區; 第3 C圖為一線性研磨薄片之俯瞰示意圖,其中該薄片上 具有各分立存在的光穿透區; 第4A及4B圖為線性基板研磨設備之部份侧面劓視圖,其 中該設備包含不同的線性研磨薄片,且每一該線性 第4頁 本紙張又度適用中國國家標準(CNS ) A4現格(2丨0X297公瘦} 426580 A7 B7 五、發明説明( 研磨薄片具有複數個表面研磨特性區 圖號#照說明: 10 設 備 12 研 磨 頭 14 研 磨 薄 片 16 研 磨 表 面 18 機 械 裝 置 20 線 性 方 向 22 監 測 系 統 24 基 板 支 撐器 26 柄 袖 28 軸 30 雙 箭 頭 3 1 雙 箭 頭 32 基 板 36 滾 輪 38 滾 輪 40 背 層 板 42 視 窗 50 雷射 光 束 52 反 射 光 束 60 分 立 區 域 62 分 立 區 域 64 分 立 區 域 70 投 影 表 面特性區 -----:----:衣------、玎 (請先閲讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消f合作社印製 @明詳細說明: 首先請參閱第1A及1 B圖’其中—線 瓦r生基板研磨設備 10包含一研磨頭12;—具有一研廢类而 ^听敁表面1 6的研磨薄片 14 ; 一線性驅動機械裝置18,其可沿大致五迠ω 崎深性之方向 20驅動表面1 6 ;及一監控系統22 » 研磨頭12包含一基板支撐器24,耦八 σ王 柄φΑ 26, 用以相對於軸28旋轉基板支撐器24,而其4丄 而基板支撐器24 也可以沿縱軸方向(雙箭頭3 0及3 1所指夕士人。 【和 < 万向)在研磨薄 第5頁 本紙張尺度適用中國國家標準(CNS ) A4規格(210x 297公釐) 經濟部眢慧財產局員工消費合作社印製 426580 A7 _B7五、發明説明() 片丨4的表面上移動’或也可以沿該兩箭頭所搆成的圓形 或橢圓形路線移動。研磨頭1 2也可以由一懸臂或一充氣 控制支撐臂(未顯示)移開或移進研磨表面1 6。研磨頭1 2 具有一支擇基板32的機械裝置,這在一美國共同申請案 中有其說明,該案名為"SUBSTRATE BELT POLISHER", 其申請號為08/568,188,在此將之併入以供參考。在另一 實施例中’研磨頭1 2可包含一柔性薄片,以提供該基板 32 —支#表面,其中來自柔性紙之反應室壓力會迫使基板 靠住該研磨墊。在美國一共同申請案中有一類似前述之基 板支撐器24的詳細說明,其申請號及名稱分別為 08/745,679 及 I,CARRIER HEAD WITH A FLEXIBLE SHEET FOR A CHEMICAL MECHANICAL POLISHING SYSTEM",在此將之併入以供參考。 線性驅動裝置1 8可在相對於基板3 2大致為線性之方 向驅動研磨薄片14之研磨表面16,亦即線性驅動裝置 能夠在平面上、或沿相對於基板32之瞬間位置之一大致 為直線路徑移動研磨表面1 6上的任何點,其中該平面大 致平行於待研磨之基板3 2。在第1 A及1B圖所指的實掩 例中,線性驅動裝置包含兩滾輪3 6及3 8,它可沿一線性 路徑20將研磨薄片丨4接附至驅動研磨表面1 6,其中研磨 表面1ό可以移動,其移動方式可以為沿一方向移動,咬 可為沿方向20前後漸進移動。滾輪3 6及3 8在其相對於 基板沿一大致為線性方向驅動研磨表面1 6時可以是水平 或垂直向的;在一滾輪之實施例中,滾輪3 6及3 8可以支 ______第 6~ar___ 本紙張尺度顧中國囤家‘(CNS ) 公康) ~ (請先間讀背面之注意事項再填寫本頁) 426580 A7 __B7 五、發明説明() # p平台上’以旋轉滾輪’又因滾輪係成對存在所以 研磨表面16也被同時旋轉,並在相對於基板^之一平面 上被線性驅動,其詳細描述可參考[代理人編號 3486/34200 1]名稱為''Apparatus and Meth〇ds f〇r Chemical
Mechanical PoHshing wUh an Advanceable PoHshing Sheet”的美國申請案。 研磨薄片14可以各種材料製成。例如,一雙層研磨 薄片包含一覆蓋層,其係由一開口穴海棉聚亞胺酯组成 (foamed polyurethane) ’或由具有一凹槽表面之聚亞胺酯 薄片組成;另雙層研磨薄片所包含的背層由胺基甲酸酯萃 取的毛纖維(compressed felt fibers leached witll urthane) 组成。此外’一研磨薄片調節器可用以使研磨表面在研磨 時間内維持研磨表面1 6所應有的條件。 Μ濟部智慧財產局員工消費合作社印製 ··1 ^^1 - I ^^^1 - 1 Γ n I ^^1 4 ,vs (請先閲讀背面之注意事項再填寫本頁) 一背層板40置於研磨薄片14的鄰近處,即置於直接 與研磨頭12掃過研磨表面16之研磨表面區域相對立的位 置’所以研磨薄片就夾在研磨頭12及背層板40之間。研 磨表面16沿線性路徑20移動,背層板4〇支撐研磨薄片 ί 4的底側’所以研磨表面丨6能以大致均勻的力研磨基板 之表面3背層板4 0具有一透明視窗(或只是一個洞,用 以使監測系統22能透過研磨薄片1 4探測基板32,其中視 窗42之用途在於使監測系統22能隨時注意基板之變化, 監測系統則包含一雷射,其雷射探測光束能經由視窗42 及研磨薄片14直抵基板處,此基板32所反射回來之光束 則由一偵測器偵測之。研磨薄片1 4包含一至少相對於監 本紙張尺度通用中國ϋ標準(CNS )八4規^( 210X297公赛) ' 4265β〇 Α7 Β7 五、發明説明( 測系統22產生之光為半透明的區域,故監測系統22得以 了解基板32表面上所移除之材料量,並能決定研磨過程 的終點,這可參考上述提及之共同申請案08M 1 3,982,此 透光經偵測並決定研磨過程終點之詳細說明如後述。 在第2圖所示之實施例中,構成研磨薄片14的材料 必須相對於監測系統22所產生的光為半透明(光能大量穿 透),如聚亞胺酿。實作中,監測系統22產生一雷射光束 50,且至少部份之該雷射光束能穿透視窗42及研磨薄片 14,這部份穿透之雷射光束50將射在基板32之上,而部 份光則會自基板3 2之一或多層膜中反射回來,此反射光 5 2的強度會因在基板3 2上移開層膜而有不同。例如,若 基板之表面層係部份能穿透而部份會反射,那麼光東5 2 就會是由不同表面所生的至少兩道光束,且光東52的強 度將依組成光束之間的相消性或相長性而有所不同,也就 疋說光束52的強度其貫主要是表面膜屠厚度的函數^若 表面膜層已經研磨且其反射性強,光束52的強度就會大 大降低。監測系統2 2在研磨過程中會監測光束5 2的強度 變化,以了解已有多少物質從基板3 2表面除去,並因此 決定研磨過程的終點。基板支撐器24的移動可決定監測 系統22的動作,而使監測系統22週期性地探測基板32。 更特定說來’監測系統22在基板32置於視窗42之上時 就會觸發雷射;換言之,監測系統22在基板32置於视窗 42之上時會打開偵測器上的擋板(shutter)。 在第3A-3C圖所示的另一實施例中,研磨薄片14包 表紙張尺度適用中國圏家標準(CNS ) A4规格(2IOX297公羞) {請先閱讀背面之注意^項再填寫本頁) 訂 經濟部智慧財產局員工消f合作社印製 第8頁 五、 426580 --------發明説明() Α7 Β7 經 濟 部 智 慧 財 產 局 a x. Ά 費 η 社 印 製 含一分立區域ό 〇 ’該分立區域相對於監測系統2 2所產生 的光至少為半透明(光大致能穿透)’其寬度約為lcm。本 實施例特別適用於當研磨薄片14由相對於監測系統22所 產生的先為大致透明之材料所製成的場合中。例如,研磨 薄片丨4可由含添加物的聚亞胺S旨(或具有一開穴結構或凹 槽表面)製成,因為它能讓雷射光束5〇透射過去,而分立 區域60可以由聚亞胺酯製成之。在第3b圖中,一分立區 域62可以延仲在研磨薄片14的整個長度上。在第3C圖 所π的另外一實施例中,一分立區域則只延伸在研磨薄片 Μ的一限定長度内。在該實施例中,監測系統Η在分立 區域64和背層板4〇之视窗42對準位時會週期性地探測 基板32。若有必要,在薄片14之中央部份的長度上可外 加分立區域64。 續請參考第4Α及4Β圖所示的另一實施例,其中研磨 薄片14的研磨表面丨6包含複數個投影表面特性區它 可用以輔助基板32表面的研磨,其中表面特性㊣7〇可以 為複數個溝槽或為均勻的凸出塊津列之排列方式,其可由 與研磨“ 14㈣的材料或其它材料製成,或也可加入 一或多樣之添加物(如氧化铈(Ce〇2)或礬土)於其中。先請 參考第4A圖,表面特性區7〇不會嚴重影響到光束52的 傳輸⑼如表面特性區的密度可以相當低,或表面特性區 川的组成成份能為光| 5〇 & 52戶斤大量穿透)。續請參考 第4B圖,若表面特性區7〇嚴重影響到光束5〇及52的穿 透(例如表面特性區的密度太高,或是每-特性區70對訊 (請先閱讀背面之注意事項再填寫本頁) *?τ ^ *—III -· .—- I . 本紙狀度cNS丨 426580 A7 B7 五、發明説明( 號之干擾程度太嚴重),那麼就必須要在表面之一區诚72 上上移除數列特性圖案,以使監測系統2 2能在不受劇烈 干擾(例如訊號之訊雜比太高)的情況下探測基板3 2 ’其中 遠區域7 2的寬度可為約1 c爪。在本實施例中,數列的特 性區可以從研磨薄片1 4的整個長度區域(例如第3 B圖肀 分立區域62的一區域)上移除,也可以從部份長度區域(例 如第3C圖中之分il區域64的一區域)中移出。 本發明中仍包含其它未列舉的實袍例,即本發明可以 包含其它之線性基板研磨設計。例如,驅動研磨薄片14 之滾輪可以是三個或更多個,另特性區也可以是其它樣 式,如前述引入供參考用之美國共同申請案〇8/568,…中 的特性區設計即為-例。研磨薄片14可以是如第Μ圖之 連續帶狀樣式’或也可以是一線性所磨薄片,它由一馬達 驅動之上舉滾輪自研磨材質之滾輪處鬆開。 除前述實施例外,其它之實施例也I併附Μ 一 專利申請範圍之範疇中》 (请先閱讀背面之法意事項符填窩本霣) 訂 -^. ! 經濟部智慧財產局員工消費合作社印製 第10頁 木紙張尺度適用中國國家標準(CNS ) Α4規格(210Χ297公釐)
Claims (1)
- ;Δ265θ〇 ABCD 夂、申請專利範圍 1. 一種基板研磨設備’該設備至少包含: 一研磨頭,用以維持住一基板,該基板具有一待研 磨之表面: 一研磨薄片,具有一研磨表面; 一驅動機械裝置,用以驅動該研磨薄片之該研磨表 面於一大致為線性的路徑上;及 一監測系統,用以經由該研磨薄片探測該基板》 2.如申請專利範圍第1項所述之基板研磨設備,其中 上述之監測系統至少包含一光源,用以產生光,並 將該光經由該研磨薄片導至該基板;另包含—谓測器, 用以偵測該基板反射回來的光;且 上述之研磨薄片包含一區域,該區域相斜於__· 所產生之光至少為半透明 源 3.如申請專利範圍第2項所述之基板研磨設備,甘 其中上述 之研磨薄片係由相對於該光源產生之光為至小 一半透明 的材料所製成。 (請先閲讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 4 如申請專利範圍第2項所述之基板研磨設備, 丹中 之研磨薄片係由相對於該光源產生之光大致& 人砀透明 材料所製成,且該研磨薄片包含一分立區域, 域相對於該光源產生之光為至少半透明。 上述 减分立 區 本紙張尺度遑用令國國家梂準(CNS ) Α4说格(210Χ297公釐) 426580 C8 D8 六、申請專利範圍 5. 如申請專利範圍第4項所述之基板研磨設備,其中上述 之分立區域大致延伸在該研磨薄片的整個長度上。 (請先閱讀背面之注意事項再填寫本頁) 6. 如申請專利範圍第4項所述之基板研磨設備,其中上述 之分立區域僅延伸在該研磨薄片的部份長度上。 7. 如申請專利範圍第1項所述之基板研磨設備,其中上述 之該研磨薄片的該研磨表面至少包含複數個投影表面 特性區(f e a t u r e s)。 8 .如申請專利範圍第7項所述之基板研磨設備,其中上述 之表面特性區置於該研磨表面上,且各相鄰的特性區之 間的間隔大致相等,且該表面特性區大致為光可穿透 的,以使該監測系統能探測該基板。 經濟部智慧財是局員工消費合作社印製 9.如申請專利範圍第7項所述之基板研磨設備,其中上述 之表面特性區置於該研磨表面上,.且各相鄰的特性區之 間的間隔大致為相等,但在該研磨表面之一探測區上之 相鄰表面特性區之間隔大於該研磨表面之其它地區的 相鄰表面特性區之間隔,以使該監測系統能探測該基 板。 1 0.如申請專利範圍第I項所述之基板研磨設備,其中上述 之監測系統用以配合該研磨頭及該驅動基械裝置,使該 第12頁 本紙張尺度適用中國國家榡準(CNS ) A4規/格(2H)X297公釐) 426580 Α8 08 C8 D8 六、申請專利範圍 兩者能週期性地探測該基板。 1 1. 一種基板研磨設備,其至少包含: 用以固定一基板之裝置,該基板具有一待研磨之表 面; 研磨薄片裝置,其具有一研磨表面,用以研磨該基 板; 驅動機械裝置,用以沿一大致為線性方向驅動該研 磨薄片之該研磨表面;及 基板探測裝置,用以經由該研磨薄片探測該基板。 1 2 · —種基板研磨方法,該方法至少包含下列步驟: 在一大致為線性之方向上,驅動一基板薄片之一研 磨表面: 固定一基板之一表面’使該表面能靠住該研磨薄片 的該研磨表面;及 經由該研磨薄片探測該基板。 13.如申請專利範圍第12項所述之基板研磨方法,其中上 遠之探測基板的方法係利用導引—探測光使之穿透該 研磨薄片,並偵測自該基板反射之光, 1 4.如申請專利範圍第1 3項所述之基板研磨方法,其中上 述之探測光被導引至該研磨薄片的一區域,該區城相對 於該探測光為至少半透明。 第13頁 本紙乐尺度適用中Η國家棋牟(CNS ) A4規格(210x297公羞) (請先閎讀背面之注意事項再填寫本頁) 11Γ 經濟部智慧財Α局員工消費合作社印製 8 83 8 ABCD 426580 六、申請專利範圍 1 5 .如申請專利範圍第13項所述之基板研磨方法,其中 上述之研磨薄片係由相對於該光源產生之光大致透 明的材料製成,且該研磨薄片包含一分立區域,該分立 區域相對於該探測光至少為半透明:且 上述之基板的探測係利用導引該探測光透過該研磨 薄片的該分立區域,並偵測從該基板反射回來並穿透該 分立區域之光為之。 1 6.如申請專利範圍第1 5項所述之基板研磨方法,其中上 述之分立區域大致延伸在該研磨薄片的整個長度上。 1 7 .如令請專利範圍第1 5項所述之基板研磨方法,其中上 述之分立區域僅延伸在該研磨薄片的部份長度上。 18.如申請專利範圍第12項所述之基板研磨方法,其中上 述之研磨薄片的該研磨表面至少包含複數個投影表面 特性區。 1 9.如申請專利範圍第1 8項所述之基板研磨方法,其中上 述之表面特性區位於該研磨表面上,且各相鄰之表面特 性區間的間隔大致相等,其中該表面特性區大致為光可 穿透的。 本紙張尺度逍用中國國家揉率(CNS >A4現格(210X297公釐) (請先閲讀背面之注意事項再填寫本頁) ,17 經濟部智慧財是局工消費合作社印製 (/12〇^8〇 D8 六'申請專利範園 20.如申請專利範圍第1 8項所述之基板研磨方法,其中上 述之表面特性區位於該研磨表面上,且各相鄰之表面特 性區間的間隔大致相等,但該研磨表面上之一探測區内 - 之各鄰近表面特性區之間的間隔大於該研磨薄片之其 它地區之表面特性區的間隔。 2 1 .如申請專利範圍第1 2項所述之基板研磨方法,其中上 述之基板之探測係為週期性的探測方式。 (請先閲讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 第15頁 本紙珉尺度速用中國國家揉隼(CNS) A4规格(2t〇X297公釐)
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JP2000225564A (ja) | 2000-08-15 |
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US6991517B2 (en) | 2006-01-31 |
JP4596587B2 (ja) | 2010-12-08 |
EP1025954A2 (en) | 2000-08-09 |
KR100715083B1 (ko) | 2007-05-07 |
KR20000057876A (ko) | 2000-09-25 |
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