TW417310B - A semiconductor position detector - Google Patents
A semiconductor position detector Download PDFInfo
- Publication number
- TW417310B TW417310B TW088110895A TW88110895A TW417310B TW 417310 B TW417310 B TW 417310B TW 088110895 A TW088110895 A TW 088110895A TW 88110895 A TW88110895 A TW 88110895A TW 417310 B TW417310 B TW 417310B
- Authority
- TW
- Taiwan
- Prior art keywords
- semiconductor
- position detector
- conductive layer
- layer
- semiconductor position
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 163
- 238000011049 filling Methods 0.000 claims description 10
- 239000012535 impurity Substances 0.000 claims description 9
- 238000009413 insulation Methods 0.000 claims description 2
- 238000012856 packing Methods 0.000 claims 1
- 239000000523 sample Substances 0.000 claims 1
- 230000035945 sensitivity Effects 0.000 abstract description 6
- 239000010410 layer Substances 0.000 description 140
- 239000000758 substrate Substances 0.000 description 25
- 238000000605 extraction Methods 0.000 description 22
- 108091006146 Channels Proteins 0.000 description 12
- 238000001514 detection method Methods 0.000 description 11
- 230000005611 electricity Effects 0.000 description 10
- 239000004020 conductor Substances 0.000 description 9
- 230000002079 cooperative effect Effects 0.000 description 9
- 238000007689 inspection Methods 0.000 description 7
- NIHNNTQXNPWCJQ-UHFFFAOYSA-N fluorene Chemical compound C1=CC=C2CC3=CC=CC=C3C2=C1 NIHNNTQXNPWCJQ-UHFFFAOYSA-N 0.000 description 6
- 238000000926 separation method Methods 0.000 description 6
- 238000009434 installation Methods 0.000 description 4
- 239000012528 membrane Substances 0.000 description 4
- 230000000875 corresponding effect Effects 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 238000002161 passivation Methods 0.000 description 3
- 229910000679 solder Inorganic materials 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 235000018185 Betula X alpestris Nutrition 0.000 description 1
- 235000018212 Betula X uliginosa Nutrition 0.000 description 1
- 101100046831 Drosophila melanogaster Tpst gene Proteins 0.000 description 1
- 108010075750 P-Type Calcium Channels Proteins 0.000 description 1
- 235000014443 Pyrus communis Nutrition 0.000 description 1
- 239000008186 active pharmaceutical agent Substances 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 230000008451 emotion Effects 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 230000016507 interphase Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 108091008695 photoreceptors Proteins 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/95—Circuit arrangements
- H10F77/953—Circuit arrangements for devices having potential barriers
- H10F77/957—Circuit arrangements for devices having potential barriers for position-sensitive photodetectors, e.g. lateral-effect photodiodes or quadrant photodiodes
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
- Length Measuring Devices By Optical Means (AREA)
- Light Receiving Elements (AREA)
- Measurement Of Optical Distance (AREA)
- Focusing (AREA)
- Automatic Focus Adjustment (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18464398 | 1998-06-30 | ||
| JP07200599A JP4220058B2 (ja) | 1998-06-30 | 1999-03-17 | 半導体位置検出器 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW417310B true TW417310B (en) | 2001-01-01 |
Family
ID=26413134
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW088110895A TW417310B (en) | 1998-06-30 | 1999-06-28 | A semiconductor position detector |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US6459109B2 (enExample) |
| EP (1) | EP1113504A4 (enExample) |
| JP (1) | JP4220058B2 (enExample) |
| KR (1) | KR100564348B1 (enExample) |
| CN (1) | CN100356588C (enExample) |
| AU (1) | AU4290199A (enExample) |
| TW (1) | TW417310B (enExample) |
| WO (1) | WO2000001018A1 (enExample) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001068724A (ja) * | 1999-08-25 | 2001-03-16 | Hamamatsu Photonics Kk | 測距装置 |
| US8144156B1 (en) * | 2003-12-31 | 2012-03-27 | Zii Labs Inc. Ltd. | Sequencer with async SIMD array |
| US7768085B2 (en) | 2005-10-11 | 2010-08-03 | Icemos Technology Ltd. | Photodetector array using isolation diffusions as crosstalk inhibitors between adjacent photodiodes |
| USD554084S1 (en) * | 2005-10-31 | 2007-10-30 | Kabushiki Kaisha Toshiba | Portion of a semiconductor apparatus mounting-position accuracy measurement jig |
| DE102006013461B3 (de) | 2006-03-23 | 2007-11-15 | Prüftechnik Dieter Busch AG | Photodetektoranordnung, Messanordnung mit einer Photodetektoranordnung und Verfahren zum Betrieb einer Messanordnung |
| DE102006013460B3 (de) | 2006-03-23 | 2007-11-08 | Prüftechnik Dieter Busch AG | Photodetektoranordnung, Messanordnung mit einer Photodetektoranordnung und Verfahren zum Betrieb einer Messanordnung |
| PT2644205T (pt) | 2007-04-12 | 2018-10-19 | Brigham & Womens Hospital Inc | Direcionamento a abcb5 para tratamento oncológico |
| US7605361B2 (en) * | 2007-07-09 | 2009-10-20 | Denso Corporation | Fuel property detection device |
| CA3001382C (en) * | 2008-02-14 | 2020-10-27 | Spiracur Inc. | Devices and methods for treatment of damaged tissue |
| CN112838021B (zh) * | 2020-12-31 | 2023-07-18 | 杭州广立微电子股份有限公司 | 一种判断器件与切断层相对位置的方法 |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL8501489A (nl) * | 1985-05-24 | 1986-12-16 | Philips Nv | Positie-gevoelige stralingsdetector. |
| DE3728691A1 (de) * | 1986-08-28 | 1988-03-10 | Nissan Motor | Lichtempfindlicher positionssensor |
| JPH0783134B2 (ja) * | 1987-07-31 | 1995-09-06 | 松下電子工業株式会社 | 光電変換装置 |
| JP2658175B2 (ja) * | 1988-05-16 | 1997-09-30 | 日産自動車株式会社 | 半導体位置センサ |
| JP2717839B2 (ja) * | 1989-03-20 | 1998-02-25 | 松下電子工業株式会社 | 光半導体装置 |
| US4887140A (en) * | 1989-04-27 | 1989-12-12 | Board Of Regents, The Univ. Of Texas System | Clover design lateral effect position-sensitive device |
| JPH0766983B2 (ja) * | 1990-04-27 | 1995-07-19 | 新日本製鐵株式会社 | 光位置検出用半導体装置 |
| JPH0513808A (ja) * | 1990-12-18 | 1993-01-22 | Hamamatsu Photonics Kk | 二次元光位置検出素子 |
| JP2931122B2 (ja) * | 1991-04-11 | 1999-08-09 | 浜松ホトニクス株式会社 | 一次元光位置検出素子 |
| US5561287A (en) * | 1994-09-30 | 1996-10-01 | Board Of Regents Of The University Of Colorado | Dual photodetector for determining peak intensity of pixels in an array using a winner take all photodiode intensity circuit and a lateral effect transistor pad position circuit |
| JPH1012856A (ja) * | 1996-06-27 | 1998-01-16 | Olympus Optical Co Ltd | 位置検知センサ |
-
1999
- 1999-03-17 JP JP07200599A patent/JP4220058B2/ja not_active Expired - Fee Related
- 1999-06-28 AU AU42901/99A patent/AU4290199A/en not_active Abandoned
- 1999-06-28 TW TW088110895A patent/TW417310B/zh not_active IP Right Cessation
- 1999-06-28 WO PCT/JP1999/003445 patent/WO2000001018A1/ja not_active Ceased
- 1999-06-28 EP EP99957665A patent/EP1113504A4/en not_active Ceased
- 1999-06-28 CN CNB998081493A patent/CN100356588C/zh not_active Expired - Fee Related
- 1999-06-28 KR KR1020007015059A patent/KR100564348B1/ko not_active Expired - Fee Related
-
2000
- 2000-12-28 US US09/749,736 patent/US6459109B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| CN100356588C (zh) | 2007-12-19 |
| KR100564348B1 (ko) | 2006-03-27 |
| JP2000082840A (ja) | 2000-03-21 |
| US6459109B2 (en) | 2002-10-01 |
| AU4290199A (en) | 2000-01-17 |
| EP1113504A4 (en) | 2003-09-03 |
| US20010001499A1 (en) | 2001-05-24 |
| KR20010071693A (ko) | 2001-07-31 |
| JP4220058B2 (ja) | 2009-02-04 |
| CN1308776A (zh) | 2001-08-15 |
| WO2000001018A1 (en) | 2000-01-06 |
| EP1113504A1 (en) | 2001-07-04 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TW417310B (en) | A semiconductor position detector | |
| US4885620A (en) | Semiconductor element | |
| TWI459545B (zh) | 具減少耦合量的高填入因數感測器 | |
| US20060011999A1 (en) | Magnetic field sensor comprising a hall element | |
| CN102141630A (zh) | 放射线检测器 | |
| CN111009539A (zh) | 图像传感器装置 | |
| US12163992B2 (en) | Charge detection sensor and potential measurement system | |
| US11009529B2 (en) | Semiconductor circuits, devices and methods | |
| TW201308583A (zh) | 畫素陣列基板及檢測模組 | |
| EP0118568A1 (en) | Semiconductor image pickup device | |
| JPS5928072B2 (ja) | 輻射線感知装置 | |
| JP2002111008A (ja) | 薄膜トランジスタアレー | |
| US20070222016A1 (en) | Photodetector arrangement, measurement arrangement with a photodetector arrangement and process for operating a measurement arrangement | |
| JP2013145180A (ja) | 放射線検出器，放射線検出装置及びそれらの動作方法 | |
| CN107807318A (zh) | 一种电子元器件测试夹具 | |
| JPH04313279A (ja) | 一次元光位置検出素子 | |
| JP3687777B2 (ja) | 半導体装置およびその検査方法 | |
| US4185293A (en) | Opto-electronic sensing apparatus and method | |
| TW385552B (en) | Semiconductor position detection apparatus | |
| JP2003535476A (ja) | 位置検出用光検出器 | |
| CN116960135A (zh) | 直接型电子探测器 | |
| JP5202331B2 (ja) | 可視光検知半導体放射線検出器 | |
| JP4197775B2 (ja) | 半導体位置検出器 | |
| JP4180708B2 (ja) | 半導体位置検出器 | |
| JP2023173690A (ja) | イメージセンサ |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GD4A | Issue of patent certificate for granted invention patent | ||
| MM4A | Annulment or lapse of patent due to non-payment of fees |