TW417310B - A semiconductor position detector - Google Patents

A semiconductor position detector Download PDF

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Publication number
TW417310B
TW417310B TW088110895A TW88110895A TW417310B TW 417310 B TW417310 B TW 417310B TW 088110895 A TW088110895 A TW 088110895A TW 88110895 A TW88110895 A TW 88110895A TW 417310 B TW417310 B TW 417310B
Authority
TW
Taiwan
Prior art keywords
semiconductor
position detector
conductive layer
layer
semiconductor position
Prior art date
Application number
TW088110895A
Other languages
English (en)
Chinese (zh)
Inventor
Tatsuo Takeshita
Kouji Noda
Masayuki Sakakibara
Original Assignee
Hamamatsu Photonics Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hamamatsu Photonics Kk filed Critical Hamamatsu Photonics Kk
Application granted granted Critical
Publication of TW417310B publication Critical patent/TW417310B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/95—Circuit arrangements
    • H10F77/953—Circuit arrangements for devices having potential barriers
    • H10F77/957—Circuit arrangements for devices having potential barriers for position-sensitive photodetectors, e.g. lateral-effect photodiodes or quadrant photodiodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices

Landscapes

  • Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Light Receiving Elements (AREA)
  • Measurement Of Optical Distance (AREA)
  • Focusing (AREA)
  • Automatic Focus Adjustment (AREA)
TW088110895A 1998-06-30 1999-06-28 A semiconductor position detector TW417310B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP18464398 1998-06-30
JP07200599A JP4220058B2 (ja) 1998-06-30 1999-03-17 半導体位置検出器

Publications (1)

Publication Number Publication Date
TW417310B true TW417310B (en) 2001-01-01

Family

ID=26413134

Family Applications (1)

Application Number Title Priority Date Filing Date
TW088110895A TW417310B (en) 1998-06-30 1999-06-28 A semiconductor position detector

Country Status (8)

Country Link
US (1) US6459109B2 (enExample)
EP (1) EP1113504A4 (enExample)
JP (1) JP4220058B2 (enExample)
KR (1) KR100564348B1 (enExample)
CN (1) CN100356588C (enExample)
AU (1) AU4290199A (enExample)
TW (1) TW417310B (enExample)
WO (1) WO2000001018A1 (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001068724A (ja) * 1999-08-25 2001-03-16 Hamamatsu Photonics Kk 測距装置
US8144156B1 (en) * 2003-12-31 2012-03-27 Zii Labs Inc. Ltd. Sequencer with async SIMD array
US7768085B2 (en) 2005-10-11 2010-08-03 Icemos Technology Ltd. Photodetector array using isolation diffusions as crosstalk inhibitors between adjacent photodiodes
USD554084S1 (en) * 2005-10-31 2007-10-30 Kabushiki Kaisha Toshiba Portion of a semiconductor apparatus mounting-position accuracy measurement jig
DE102006013461B3 (de) 2006-03-23 2007-11-15 Prüftechnik Dieter Busch AG Photodetektoranordnung, Messanordnung mit einer Photodetektoranordnung und Verfahren zum Betrieb einer Messanordnung
DE102006013460B3 (de) 2006-03-23 2007-11-08 Prüftechnik Dieter Busch AG Photodetektoranordnung, Messanordnung mit einer Photodetektoranordnung und Verfahren zum Betrieb einer Messanordnung
PL2155248T3 (pl) 2007-04-12 2015-12-31 Brigham & Womens Hospital Inc Celowanie w ABCB5 w terapii nowotworowej
US7605361B2 (en) * 2007-07-09 2009-10-20 Denso Corporation Fuel property detection device
AU2009214439B2 (en) * 2008-02-14 2014-09-25 Solventum Intellectual Properties Company Devices and methods for treatment of damaged tissue
CN112838021B (zh) * 2020-12-31 2023-07-18 杭州广立微电子股份有限公司 一种判断器件与切断层相对位置的方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL8501489A (nl) * 1985-05-24 1986-12-16 Philips Nv Positie-gevoelige stralingsdetector.
DE3728691A1 (de) * 1986-08-28 1988-03-10 Nissan Motor Lichtempfindlicher positionssensor
JPH0783134B2 (ja) * 1987-07-31 1995-09-06 松下電子工業株式会社 光電変換装置
JP2658175B2 (ja) * 1988-05-16 1997-09-30 日産自動車株式会社 半導体位置センサ
JP2717839B2 (ja) * 1989-03-20 1998-02-25 松下電子工業株式会社 光半導体装置
US4887140A (en) * 1989-04-27 1989-12-12 Board Of Regents, The Univ. Of Texas System Clover design lateral effect position-sensitive device
JPH0766983B2 (ja) * 1990-04-27 1995-07-19 新日本製鐵株式会社 光位置検出用半導体装置
JPH0513808A (ja) * 1990-12-18 1993-01-22 Hamamatsu Photonics Kk 二次元光位置検出素子
JP2931122B2 (ja) * 1991-04-11 1999-08-09 浜松ホトニクス株式会社 一次元光位置検出素子
US5561287A (en) * 1994-09-30 1996-10-01 Board Of Regents Of The University Of Colorado Dual photodetector for determining peak intensity of pixels in an array using a winner take all photodiode intensity circuit and a lateral effect transistor pad position circuit
JPH1012856A (ja) * 1996-06-27 1998-01-16 Olympus Optical Co Ltd 位置検知センサ

Also Published As

Publication number Publication date
CN1308776A (zh) 2001-08-15
KR100564348B1 (ko) 2006-03-27
WO2000001018A1 (en) 2000-01-06
US6459109B2 (en) 2002-10-01
US20010001499A1 (en) 2001-05-24
AU4290199A (en) 2000-01-17
JP4220058B2 (ja) 2009-02-04
KR20010071693A (ko) 2001-07-31
EP1113504A1 (en) 2001-07-04
EP1113504A4 (en) 2003-09-03
CN100356588C (zh) 2007-12-19
JP2000082840A (ja) 2000-03-21

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MM4A Annulment or lapse of patent due to non-payment of fees