CN100356588C - 半导体位置探测器 - Google Patents

半导体位置探测器 Download PDF

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Publication number
CN100356588C
CN100356588C CNB998081493A CN99808149A CN100356588C CN 100356588 C CN100356588 C CN 100356588C CN B998081493 A CNB998081493 A CN B998081493A CN 99808149 A CN99808149 A CN 99808149A CN 100356588 C CN100356588 C CN 100356588C
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CN
China
Prior art keywords
semiconductor
conductive layer
position sensor
semiconductor position
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CNB998081493A
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English (en)
Chinese (zh)
Other versions
CN1308776A (zh
Inventor
竹下辰夫
榊原正之
野田浩二
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hamamatsu Photonics KK
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Hamamatsu Photonics KK
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Publication date
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Publication of CN1308776A publication Critical patent/CN1308776A/zh
Application granted granted Critical
Publication of CN100356588C publication Critical patent/CN100356588C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/95—Circuit arrangements
    • H10F77/953—Circuit arrangements for devices having potential barriers
    • H10F77/957—Circuit arrangements for devices having potential barriers for position-sensitive photodetectors, e.g. lateral-effect photodiodes or quadrant photodiodes

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Light Receiving Elements (AREA)
  • Measurement Of Optical Distance (AREA)
  • Focusing (AREA)
  • Automatic Focus Adjustment (AREA)
CNB998081493A 1998-06-30 1999-06-28 半导体位置探测器 Expired - Fee Related CN100356588C (zh)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP18464398 1998-06-30
JP184643/1998 1998-06-30
JP184643/98 1998-06-30
JP72005/99 1999-03-17
JP72005/1999 1999-03-17
JP07200599A JP4220058B2 (ja) 1998-06-30 1999-03-17 半導体位置検出器

Publications (2)

Publication Number Publication Date
CN1308776A CN1308776A (zh) 2001-08-15
CN100356588C true CN100356588C (zh) 2007-12-19

Family

ID=26413134

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB998081493A Expired - Fee Related CN100356588C (zh) 1998-06-30 1999-06-28 半导体位置探测器

Country Status (8)

Country Link
US (1) US6459109B2 (enExample)
EP (1) EP1113504A4 (enExample)
JP (1) JP4220058B2 (enExample)
KR (1) KR100564348B1 (enExample)
CN (1) CN100356588C (enExample)
AU (1) AU4290199A (enExample)
TW (1) TW417310B (enExample)
WO (1) WO2000001018A1 (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001068724A (ja) * 1999-08-25 2001-03-16 Hamamatsu Photonics Kk 測距装置
US8144156B1 (en) * 2003-12-31 2012-03-27 Zii Labs Inc. Ltd. Sequencer with async SIMD array
US7768085B2 (en) 2005-10-11 2010-08-03 Icemos Technology Ltd. Photodetector array using isolation diffusions as crosstalk inhibitors between adjacent photodiodes
USD554084S1 (en) * 2005-10-31 2007-10-30 Kabushiki Kaisha Toshiba Portion of a semiconductor apparatus mounting-position accuracy measurement jig
DE102006013461B3 (de) 2006-03-23 2007-11-15 Prüftechnik Dieter Busch AG Photodetektoranordnung, Messanordnung mit einer Photodetektoranordnung und Verfahren zum Betrieb einer Messanordnung
DE102006013460B3 (de) 2006-03-23 2007-11-08 Prüftechnik Dieter Busch AG Photodetektoranordnung, Messanordnung mit einer Photodetektoranordnung und Verfahren zum Betrieb einer Messanordnung
PT2644205T (pt) 2007-04-12 2018-10-19 Brigham & Womens Hospital Inc Direcionamento a abcb5 para tratamento oncológico
US7605361B2 (en) * 2007-07-09 2009-10-20 Denso Corporation Fuel property detection device
CA3001382C (en) * 2008-02-14 2020-10-27 Spiracur Inc. Devices and methods for treatment of damaged tissue
CN112838021B (zh) * 2020-12-31 2023-07-18 杭州广立微电子股份有限公司 一种判断器件与切断层相对位置的方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04313279A (ja) * 1991-04-11 1992-11-05 Hamamatsu Photonics Kk 一次元光位置検出素子
JPH0513808A (ja) * 1990-12-18 1993-01-22 Hamamatsu Photonics Kk 二次元光位置検出素子

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL8501489A (nl) * 1985-05-24 1986-12-16 Philips Nv Positie-gevoelige stralingsdetector.
DE3728691A1 (de) * 1986-08-28 1988-03-10 Nissan Motor Lichtempfindlicher positionssensor
JPH0783134B2 (ja) * 1987-07-31 1995-09-06 松下電子工業株式会社 光電変換装置
JP2658175B2 (ja) * 1988-05-16 1997-09-30 日産自動車株式会社 半導体位置センサ
JP2717839B2 (ja) * 1989-03-20 1998-02-25 松下電子工業株式会社 光半導体装置
US4887140A (en) * 1989-04-27 1989-12-12 Board Of Regents, The Univ. Of Texas System Clover design lateral effect position-sensitive device
JPH0766983B2 (ja) * 1990-04-27 1995-07-19 新日本製鐵株式会社 光位置検出用半導体装置
US5561287A (en) * 1994-09-30 1996-10-01 Board Of Regents Of The University Of Colorado Dual photodetector for determining peak intensity of pixels in an array using a winner take all photodiode intensity circuit and a lateral effect transistor pad position circuit
JPH1012856A (ja) * 1996-06-27 1998-01-16 Olympus Optical Co Ltd 位置検知センサ

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0513808A (ja) * 1990-12-18 1993-01-22 Hamamatsu Photonics Kk 二次元光位置検出素子
JPH04313279A (ja) * 1991-04-11 1992-11-05 Hamamatsu Photonics Kk 一次元光位置検出素子

Also Published As

Publication number Publication date
KR100564348B1 (ko) 2006-03-27
JP2000082840A (ja) 2000-03-21
US6459109B2 (en) 2002-10-01
AU4290199A (en) 2000-01-17
EP1113504A4 (en) 2003-09-03
US20010001499A1 (en) 2001-05-24
KR20010071693A (ko) 2001-07-31
JP4220058B2 (ja) 2009-02-04
CN1308776A (zh) 2001-08-15
WO2000001018A1 (en) 2000-01-06
EP1113504A1 (en) 2001-07-04
TW417310B (en) 2001-01-01

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Granted publication date: 20071219

Termination date: 20130628