JP4220058B2 - 半導体位置検出器 - Google Patents

半導体位置検出器 Download PDF

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Publication number
JP4220058B2
JP4220058B2 JP07200599A JP7200599A JP4220058B2 JP 4220058 B2 JP4220058 B2 JP 4220058B2 JP 07200599 A JP07200599 A JP 07200599A JP 7200599 A JP7200599 A JP 7200599A JP 4220058 B2 JP4220058 B2 JP 4220058B2
Authority
JP
Japan
Prior art keywords
semiconductor
conductive layer
position detector
semiconductor position
insulating film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP07200599A
Other languages
English (en)
Japanese (ja)
Other versions
JP2000082840A (ja
JP2000082840A5 (enExample
Inventor
辰夫 竹下
正之 榊原
浩二 野田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hamamatsu Photonics KK
Original Assignee
Hamamatsu Photonics KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to JP07200599A priority Critical patent/JP4220058B2/ja
Application filed by Hamamatsu Photonics KK filed Critical Hamamatsu Photonics KK
Priority to AU42901/99A priority patent/AU4290199A/en
Priority to EP99957665A priority patent/EP1113504A4/en
Priority to TW088110895A priority patent/TW417310B/zh
Priority to PCT/JP1999/003445 priority patent/WO2000001018A1/ja
Priority to CNB998081493A priority patent/CN100356588C/zh
Priority to KR1020007015059A priority patent/KR100564348B1/ko
Publication of JP2000082840A publication Critical patent/JP2000082840A/ja
Priority to US09/749,736 priority patent/US6459109B2/en
Publication of JP2000082840A5 publication Critical patent/JP2000082840A5/ja
Application granted granted Critical
Publication of JP4220058B2 publication Critical patent/JP4220058B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/95—Circuit arrangements
    • H10F77/953—Circuit arrangements for devices having potential barriers
    • H10F77/957—Circuit arrangements for devices having potential barriers for position-sensitive photodetectors, e.g. lateral-effect photodiodes or quadrant photodiodes

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Light Receiving Elements (AREA)
  • Measurement Of Optical Distance (AREA)
  • Focusing (AREA)
  • Automatic Focus Adjustment (AREA)
JP07200599A 1998-06-30 1999-03-17 半導体位置検出器 Expired - Fee Related JP4220058B2 (ja)

Priority Applications (8)

Application Number Priority Date Filing Date Title
JP07200599A JP4220058B2 (ja) 1998-06-30 1999-03-17 半導体位置検出器
EP99957665A EP1113504A4 (en) 1998-06-30 1999-06-28 SEMICONDUCTOR LOCATOR
TW088110895A TW417310B (en) 1998-06-30 1999-06-28 A semiconductor position detector
PCT/JP1999/003445 WO2000001018A1 (en) 1998-06-30 1999-06-28 Semiconductor position sensor
AU42901/99A AU4290199A (en) 1998-06-30 1999-06-28 Semiconductor position sensor
CNB998081493A CN100356588C (zh) 1998-06-30 1999-06-28 半导体位置探测器
KR1020007015059A KR100564348B1 (ko) 1998-06-30 1999-06-28 반도체 위치 검출기
US09/749,736 US6459109B2 (en) 1998-06-30 2000-12-28 Semiconductor position sensor

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP18464398 1998-06-30
JP10-184643 1998-06-30
JP07200599A JP4220058B2 (ja) 1998-06-30 1999-03-17 半導体位置検出器

Publications (3)

Publication Number Publication Date
JP2000082840A JP2000082840A (ja) 2000-03-21
JP2000082840A5 JP2000082840A5 (enExample) 2006-02-23
JP4220058B2 true JP4220058B2 (ja) 2009-02-04

Family

ID=26413134

Family Applications (1)

Application Number Title Priority Date Filing Date
JP07200599A Expired - Fee Related JP4220058B2 (ja) 1998-06-30 1999-03-17 半導体位置検出器

Country Status (8)

Country Link
US (1) US6459109B2 (enExample)
EP (1) EP1113504A4 (enExample)
JP (1) JP4220058B2 (enExample)
KR (1) KR100564348B1 (enExample)
CN (1) CN100356588C (enExample)
AU (1) AU4290199A (enExample)
TW (1) TW417310B (enExample)
WO (1) WO2000001018A1 (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001068724A (ja) * 1999-08-25 2001-03-16 Hamamatsu Photonics Kk 測距装置
US8144156B1 (en) * 2003-12-31 2012-03-27 Zii Labs Inc. Ltd. Sequencer with async SIMD array
US7768085B2 (en) 2005-10-11 2010-08-03 Icemos Technology Ltd. Photodetector array using isolation diffusions as crosstalk inhibitors between adjacent photodiodes
USD554084S1 (en) * 2005-10-31 2007-10-30 Kabushiki Kaisha Toshiba Portion of a semiconductor apparatus mounting-position accuracy measurement jig
DE102006013461B3 (de) 2006-03-23 2007-11-15 Prüftechnik Dieter Busch AG Photodetektoranordnung, Messanordnung mit einer Photodetektoranordnung und Verfahren zum Betrieb einer Messanordnung
DE102006013460B3 (de) 2006-03-23 2007-11-08 Prüftechnik Dieter Busch AG Photodetektoranordnung, Messanordnung mit einer Photodetektoranordnung und Verfahren zum Betrieb einer Messanordnung
PT2644205T (pt) 2007-04-12 2018-10-19 Brigham & Womens Hospital Inc Direcionamento a abcb5 para tratamento oncológico
US7605361B2 (en) * 2007-07-09 2009-10-20 Denso Corporation Fuel property detection device
CA3001382C (en) * 2008-02-14 2020-10-27 Spiracur Inc. Devices and methods for treatment of damaged tissue
CN112838021B (zh) * 2020-12-31 2023-07-18 杭州广立微电子股份有限公司 一种判断器件与切断层相对位置的方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL8501489A (nl) * 1985-05-24 1986-12-16 Philips Nv Positie-gevoelige stralingsdetector.
DE3728691A1 (de) * 1986-08-28 1988-03-10 Nissan Motor Lichtempfindlicher positionssensor
JPH0783134B2 (ja) * 1987-07-31 1995-09-06 松下電子工業株式会社 光電変換装置
JP2658175B2 (ja) * 1988-05-16 1997-09-30 日産自動車株式会社 半導体位置センサ
JP2717839B2 (ja) * 1989-03-20 1998-02-25 松下電子工業株式会社 光半導体装置
US4887140A (en) * 1989-04-27 1989-12-12 Board Of Regents, The Univ. Of Texas System Clover design lateral effect position-sensitive device
JPH0766983B2 (ja) * 1990-04-27 1995-07-19 新日本製鐵株式会社 光位置検出用半導体装置
JPH0513808A (ja) * 1990-12-18 1993-01-22 Hamamatsu Photonics Kk 二次元光位置検出素子
JP2931122B2 (ja) * 1991-04-11 1999-08-09 浜松ホトニクス株式会社 一次元光位置検出素子
US5561287A (en) * 1994-09-30 1996-10-01 Board Of Regents Of The University Of Colorado Dual photodetector for determining peak intensity of pixels in an array using a winner take all photodiode intensity circuit and a lateral effect transistor pad position circuit
JPH1012856A (ja) * 1996-06-27 1998-01-16 Olympus Optical Co Ltd 位置検知センサ

Also Published As

Publication number Publication date
CN100356588C (zh) 2007-12-19
KR100564348B1 (ko) 2006-03-27
JP2000082840A (ja) 2000-03-21
US6459109B2 (en) 2002-10-01
AU4290199A (en) 2000-01-17
EP1113504A4 (en) 2003-09-03
US20010001499A1 (en) 2001-05-24
KR20010071693A (ko) 2001-07-31
CN1308776A (zh) 2001-08-15
WO2000001018A1 (en) 2000-01-06
EP1113504A1 (en) 2001-07-04
TW417310B (en) 2001-01-01

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