TW392288B - Thermally stable dielectric coatings - Google Patents

Thermally stable dielectric coatings Download PDF

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TW392288B
TW392288B TW087108334A TW87108334A TW392288B TW 392288 B TW392288 B TW 392288B TW 087108334 A TW087108334 A TW 087108334A TW 87108334 A TW87108334 A TW 87108334A TW 392288 B TW392288 B TW 392288B
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coating
thickness
resin
patent application
layer
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Jeffrey Nicholas Bremmer
Kyuha Chung
Chandan Kumar Saha
Michael J Spaulding
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Dow Corning
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    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/312—Organic layers, e.g. photoresist
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    • B05D3/00—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
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Description

kl B7 五、發明説明（i ) 本發明係關於製造耐熱性介電塗層之方法，含由氫梦倍 半氧燒樹脂（H-樹脂）厚1.25至2.25 的第一塗層與含二氧 化石夕（Si〇2)厚至少1〇〇 nm的第二塗層。經發現當厚度至少 '1〇〇 nm的二氧化矽塗層塗在H_樹脂層外時該塗層在其後熱 處理中能抗碎裂。於是合宜製造耐熱介電塗層。 技術上已知中階介電與鈍化在半導體裝置上之有限厚度 多層塗層之製作法。在美國專利5，145,723内所述流行方法 下H-樹脂吐絲於半導體裝置上，脱除一切溶劑在該裝置上 產生一H-樹脂膜。此膜隨後經將半導體裝置置於加熱板 (l5〇°C至35〇。〇上加熱軟化使h-樹脂流動，最後在斗⑼^至 450 C烘爐内加熱使膜熟化。不過此法僅有效製造有薄層 (<1·2 //ιη)Η-樹脂陶瓷之不裂塗層。此薄層不充分覆蓋金屬 層，故必須在孩Η-樹脂陶瓷上塗敷一厚層si〇2製成適當的 中階介電。 美國專利4,756,977内發表由樹脂在集體電路上製造多 層塗層I另一種方法。根據此專利一第一層係由裝置上塗 敷H-樹脂的溶劑溶液製成，然後脱除溶劑，加熱至15〇。(：與 1000 C間溫度使塗層陶瓷化。由1977方法製得之H_樹脂基 塗層厚度3,000至5,000埃（03至〇5 隨後在沁樹脂塗層 上塗敷一鈍化塗層。此鈍化塗層可係Si，siN，Sic或sicN。 希望自Η-樹脂製造較厚塗層以適當覆蓋敷金屬作用。但 用現行加工法製造厚塗層時其中含不合要求的破裂。 技術上已知熟化Η-樹脂的其他方法；但此等方法並不提 示或建議如何便行製作U5 以上的厚塗層。舉例，美國 -4-
私紙張尺度適用中國國家標準（CNS ;|裝------訂------線 (請先閱讀背面之；k意事項寫本頁) 丨、 經濟部中央標準局員工消費合作社印製 經濟部中央標準局員工消費合作社印製 Μ 五、發明説明（ 專利5,380,567 ’ 5,370,904及5,370,903提出在惰性氣氛内熟 化H-樹脂。美國專利5,38〇,567透露H_樹脂在惰性氣氛内於 500 C至1000 c之溫度熟化（塗層厚度〇 2 。美國專利 5,370,904提供一種方法以製作厚二氧化矽膜其中方法包括 在表面上作一H-樹脂膜，然後在惰性氣氛内於自25〇;>c至 5〇〇°c溫度將膜加熱直到二氧化矽產物内siH含量達到原來 H-樹脂（塗覆厚度1(M 2S "m)内含量之g 8〇%。美國專利 5,370,903爲厚二氧化矽之另—製法，其中方法包括在表面 上作一㈣脂膜，然後將該膜在混合氣氛團％體積A) 中以自250 C至500。。溫度加熱以迄二氧化矽製品内siH達 到起始Η·樹脂（塗層厚度1剔·1〇細）的SiH含量之謂％。 此外美國專利5,059,448結合利用快速熱處理製造ι _以 :(〇.13至0.945㈣)之塗層。，憎中&樹脂膜曝露於高強度 輻射於50C至1000X：溫度迅速加 加填料於H-樹脂亦曾製得動：戶，备a # ;塗層。但因填料存在與填 科對塗層性質之影響，此等塗 „ 宁1層不必项作中階介電。舉例 ，美國專利5,458,912主張一種在雷子费 層在該裝置上塗敷一本石夕m裝置上作防回火的塗 敷σ矽石則身與填料之塗層；隨後於一 足以化此梦石前身成—本於 身成。矽石的陶瓷底質之溫度加埶。 所製塗層具厚度20至48 Am。 … 兹意外發現熟化條件（時間 „ ,,L 度與银境）經控制時可自 树如順利製得厚度1.25 以上的血 、入 m ^ Ατχ ^ 的，·、、破衣不洛塗層。亦發 見田在Η-树脂塗層上塗敷至少ι η & 塗〜 子之一氧化矽層時所產 …曝露於其後熱處理時保持無破裂。
、："訂 鎳----- (請先Μ讀背面之注意事項导4寫本夏) • - - -I 1 . 經濟部中央標準局員工消費合作社印製 kl B7 五、發明説明（3 ) 本發明係關一種熱安定性多層塗層之製法及用以製得之 塗層。此多層塗層含一厚1.25至2.25 yin由H-樹脂製造之第 一塗層與一含二氧化石夕（Si02)至少厚100 nm的第二塗層。 第一塗層之製法包括在底質上塗敷一無填料的H-樹脂組 合物，然後將該樹脂於150°C至500°C溫度加熱足夠時期製 成厚1.25 至2.25 之無破裂塗層。第二塗層係在第一 塗層上澱積至少厚1 〇〇 nm之二氧化矽較佳經PECVD製得。 此多層塗層曝露於其後熱處理時異常安定（保持無破裂）。 本發明係關一種熱安定性多層塗層之製法及其所製的塗 層。多層塗層適用於任何底質如金屬或陶瓷，但在電子基 底上特別有效。"熱安定性"係謂塗層於曝露其後熱處理（溫 度S 450°C )時包括熟化處理（多達4循環）與退火（02與八 二者）不發展裂破。所謂"電子基底"意指製造半導體組件 包括焦平面陣列、光電子裝置、光電伏打電池、光學裝置 、電晶體類裝置、3-D裝置、絕緣體上矽裝置，及超晶格 裝置等。 文内所製多層塗層可於實施任何敷金屬法之前塗敷於晶 片。亦可塗敷於敷金屬法上作中階介電或塗敷作頂部鈍化 塗層以完成集體電路製作。 此外，電子基底能裸露（即無鈍化作用）或者能有初步鈍 化。此項初步'純化典型係陶堯塗料如沙石、氮化欢、碳化 矽、氧氮化矽、氧碳化矽、PSG、BPSG及其他，經CVD、 PVD、PECVD或溶膠-凝膠方式澱積。其初步鈍化及澱積方 法爲技術上所知。較佳電子基底有厚度達3 00 nm、較佳30 一 6- 本纸張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） --------U衣------1T------1 - (請先閱讀背面之I意事項各4寫本頁) 五、發明説明（4 ) —- nm至300 rnn碎石组成之初步鈍化層。 本發明多層塗層〈第—層係將-含H·樹脂的無填料组合 物塗敷在基嚴上製得。此樹脂含HSi(QH)x(OR)yC)z/2式單位 组成的氫化石夕氧燒樹脂，其中絲係獨立有機基或一取代 的有機基，當經氧原子連接至石夕時形成—能水解的取代基 ，x=0至2，y=〇至2，2=1至3，x+y+z=3。尺之實例包括燒基 如甲、乙、丙及丁基；芳基如苯基；及缔煙基如缔丙或乙 烯基。此等樹月旨可係本質上充分縮合的⑽i〇w丄其中係8 或更大或者可僅部分水解（即含多少si0R)&/或部分縮合（即 含夕少Si-OH)。雖非由此結構代表，此等樹脂亦可含少數（ 例如少於1〇%)之矽原子有隨意〇或2氫原子連接其上或少數 Sic键由於有關其形成或處理之多種因數。 以上H-樹脂及其製法爲技術上所知。舉例，美國專利 3,615,272表tf —種幾乎完全縮合的H_樹脂（可含多達ι〇〇_ 300 PPm矽烷醇）的製法，包括在苯磺酸水合物水解介質内 水解一氯矽烷，随後用水或硫酸水液洗滌所得樹脂。同樣 美國專利5,010，159提供另一方法包括在芳基磺酸水合物水 解A貝内水解氫化石夕氧規形成樹脂，然後與一中性用劑接 觸。 八他風化碎乳娱^樹脂諸如經美國專利4，"9,397與 5,210,160説明者，其由—虎氧基或醯氧基矽燒在酸性、醇 土水解介貝内水解產生者；其在Jp_As 59_178749, 及63-1 07122中説明者；或任何其他同等氫化矽氧烷亦能在 此適當作用。 讀 先 閱 讀 背 之 注— 意 事 項 i 裝
1T 線 經濟部中央標準局員工消費合作社印製 \ -7- 經濟部中央標準局員工消費合作社印製 Λ7 B7 五、發明説明（5 ) 特定分子量部分之上述H-樹脂亦可用於本發明。此等部 分及其製法在美國專利5,063,267與5,416，190内指示。較佳 部分所含材料内至少75%聚合型物類有至少1200之數均分 子量，一更佳部分所含材料内至少有75%聚合型物類有 1 200與100,000間的數均分子量。 H-樹脂可另含一鉑、鍺或銅觸媒以提升該樹脂熟化速率 及深度。一般言之能增溶的任何鉑、铑或銅化合物或鉻合 物在此有效。舉例，得自 Dow Corning Cora, Midland, Mich 之乙醯基醋酮酸鉑、铑觸媒RhCl3[S(CH2CH2CH2CH3)2]3，或 環烷酸銅適宜。此等觸媒通常添加量以Η-樹脂重量基計在5 至1000 ppm銘、錄或銅。此處有效的銘與錢觸媒在美國專 利4,822,697中詳述。 陶瓷氧化物先質亦可與此處H-樹脂組合使用。預期的陶 资氧化物先質包括多種金屬如銘、妓、錯、麵、叙及/或鈒 ，以'及各種非金屬化合物諸如或鱗可溶於溶液者，水解 然後於較低溫熱解形成陶瓷氧化物。 以上陶瓷氧化物先質一般有一或多個能水解的基結合於 上述金屬或非金屬，視金屬之價數而定。此等化合物内所 含能水解基之數目並無嚴限、只要其化合物能溶解或分散 於溶劑。同樣，選擇正確能水解的取代基不嚴格，由於取 代基在系統外隨意被水解或熱解。典型能水解的基爲烷氧 基諸如甲氧、丙氧、丁氧及己氧；醯氧基諸如乙醯氧；經 過氧連接於該金屬或非金屬的其他有機基諸如乙酿基醋酮 酸鹽或胺基等。因此，明確化合物包括四乙醯基醋酮酸锆 一 8- 本紙張尺度適用中國國家標準（CNS ) A4規格（2丨OX 297公釐） --------丨裝-------訂----^---諫 一 * (請先閲讀背面之注意事項具^寫本1) Λ7 B7 五、發明説明（6 ) 一乙酿基醋酮酸鈇，三乙酸基醋酮酸銘，四異丁氧鈇與 Ti[N(CH3)2]4。此處適用的陶瓷氧化物先質經美國專利 4,808,653、5,〇〇8,32〇及5,290,354中指示進—步説明與製造。 陶瓷氧化物先質與H-樹脂组合時通常用量在使最後塗層 含0.1至3〇%重量比的陶瓷氧化物先質。 H-樹脂正常成一溶劑分散液塗敷於基底。溶劑包括任何 能溶解該樹脂生成均勻液態混合物而不影響所製塗層之用 鈉或混合用劑。此等溶劑包括醇類諸如乙醇或異丙醇；芳 烴類諸如苯或曱苯；鏈烷類如正庚烷、十二碳烷或壬烷； 酮類諸如曱基異丁基酮；酯類；二醇醚類及矽氧烷類諸如 裒一甲基^秒氧；k及線形二甲基多硬氧燒（例如六甲基乙石夕 氧烷、八曱基丙矽氧烷及其等混合物）。溶劑含量足夠溶解 H-樹脂至塗敷適宜濃度。溶劑以該樹脂與溶劑之總重量基 計典型含量20至99wt%,較佳自5〇至8〇%，最好在乃至乃 wt%。. H-樹脂之特定塗敷法包括自轉塗覆、沉浸塗覆、噴霧塗 覆、流動塗覆及網印等。較佳塗敷法爲自轉塗覆。用溶劑 時任由基底上所得H-樹脂膜澱積的塗層基底中溶劑蒸發。 於是用任何適當蒸發措施，諸如暴露於周園環境簡單風乾 ，施加減壓或適度加熱（s 5(rc)或在熟化過程的早期階叛 。應汪思用自轉塗覆時儘量減少附加乾燥方法以自轉驅除 溶劑。 基底塗敷後於150Ό至50(rc溫度，較佳2〇〇。(：至4〇〇。(：， 更好300T：至38(rc將H-樹脂膜熟化加熱該膜—定時間成無 本纸張尺lit用悄準（CNS) 請 先 閱 讀 背 之 注- 意 事 項 至裝 1 訂 經濟部中央榡準局員工消費合作社印製 2不溶性塗層。所謂”不溶性塗層"係指塗層本質上不溶 =樹脂自其中殿積生成該膜之溶劑或上述有助於文内塗 放H-樹脂之任何溶劑。”無破細 衣思喷塗層在一光學顯微鏡 下以ιοοοχ放大檢查時不本人~日鈿π a 1 σ人六員目視可見的任何破裂。 此處可用任何方法加熱，例如梏 1 j如使用對流爐、快速熱處理 、加熱板及輻射或微波能，以埶妬 ,^ 热扳車乂佳。用法必須能快速 加熱此膜至所須溫度。 加熱塗層熟化之時期久暫視加熱期間環境、加熱時溫度（ 浸=溫度）、升溫熟m樹職厚度而定。熟化環境内浸 入溫度較高及/或氧濃度較高時熟化時間可較短。塗層典型 加熱自1秒至2小時，較佳自5秒至3〇分鐘。 若塗層在浸入溫度加熱不夠久或加熱太久，將產生破裂 。基本上在設定塗層厚度能產生無破裂塗層之指定浸入溫 度與環境=面有-空窗時間。浸人溫度愈低、&窗口愈大 。溫度升高時此窗π減小。又環境内含氧量增多時此窗降 低。舉例膜厚2 "m之膜於32crc時在惰氣氛（<5〇ppm〇2)内 熟化、熟化空窗爲2分至120分鐘。38〇r時熟化空窗自〇〇1 分至5分鐘。 塗層加熱欠久、塗層冷至室溫時將顯現裂破。相信經再 將塗層加熱充分時期可能修理/復原裂破。塗層加熱過久 時冷却塗層至室溫將再出現破裂。但此等後破裂不能再修 復。 樹脂膜熟化環境典型爲惰性環境諸如氮、氬、氦、或 含氧環境（例如空氣）。周園環境内氧含量加多時熟化H_ 經濟部中央標準局員工消費合作社印製 Λ7 B7 五、發明説明（8 ) 脂至無破裂塗層所須最少時間將縮短。而且無破裂塗層產 生期間之時間空窗將變窄。在較低溫（例如S 330°C )加熱時 較佳有氧存在以加速熟化。但當於較高溫（例如δ 340°C )加 熱時宜用惰性環境。 H-樹脂可在大氣壓、超大氣壓或眞空計壓力下進行熟化 ，較佳在大氣壓。溫度較低時用較高壓以加速熟化。眞空 可在任何溫度使用。 塗層加熱至浸入溫度之速度對製造無破裂塗層任務重要 。若加熱速度快則製造無破裂塗層之空窗時間將較長或者 浸入溫度較高及/或較高塗層厚度可達成無破裂。反之若加 熱速度缓慢則產生無破裂塗層之空窗時間能較短或者必要 較低浸入溫度與/或降低塗層厚度以獲致無破裂塗層。 此處厚塗層可藉製作單一厚H-樹脂膜隨後在吾人控制條 件下熟化製成。此處亦可藉.製作一薄H-樹脂膜然後在吾人 控制條件下熟化並重複製程直到獲得所須厚度產生厚層。 本發明第一層塗層有厚度至少1.25 //m，較佳1.25至2.25 //m，最’好 1.5至 2.2 //m。 文内所製不溶性塗料之化學成分與分子結構不完全了解 。但相信成分與用已知熟化方法以用吾人申請的熟化方法 獲得根據獨特性質（厚度、無破裂等）所製之不溶性塗料不 同0 本發明吾人多層塗層之第二層係由含矽料經澱積（即CVD， PECVD,等）所產生二氧化矽组成，厚度至少100 nm至2 ，較佳至少170 nm，更佳至少200 nm，最後至少300 nm。 -11- 本紙張尺度適用中國國家標準（CNS ) A4規格（210X 297公釐） --------1¾衣------，tT------Λ (請先閱讀背面之：'/£-意事項各^寫本頁) 392288 Μ Β7 五、發明説明（9 ) 第二層之塗敷法不嚴格，此項塗層係用任何化學蒸汽澱 積技術諸如熱化學蒸汽澱積法（TCVD)，光化學蒸汽澱積， 電漿促進的化學蒸汽澱積（PECVD)，電子迴旋加速機共鳴 (ECR)及噴射蒸汽澱積作用等塗敷。用物理蒸汽澱積技術諸 如噴鍍或電子束蒸發等亦便利塗敷。此等方法包含隨意添 加熱或電漿式能量於蒸發的物類引起所須反應或者集中能 量於材料之固態試樣上使其澱積。用CVD製造二氧化碳層 之方法在美國專利4,981，724中更完全敘述。 舉例，在熱化學蒸汽澱積作用中將所須先質氣流送過已 加熱的底質上澱析塗層。先質氣體接觸熱表面時反應而析 積塗層。底質溫度在25°C至1，000°C範圍内在幾分鐘至數小' 時内形成此等塗層視先質氣體及塗層厚度而定。此項製法 中亦能用反應性金屬以促進澱積。 在PECVD法中將先質氣體送過電漿場使反應。生成反應 性物類，聚集於易附著的底質處。PECVD法勝過熱CVD法 之優點爲前者用較低基底及處理溫度，即25°C至600°C。 PECVD法中所用電漿能係自放電、無線電頻或微波範圍 内電磁場、雷射或粒子束中衍生的能量。多數電漿澱積法 中較佳用無線電頻（即10 kHz至102 MHz)或中等能力密度（即 0.1-5瓦特/cm2)之微波能量（即O.l-lOGHz或109Hz)。頻率、 能力及壓力經調適配合先質氣體與所用設備。 欲製二氧化矽層典型有一含矽先質氣體與一氧源反應。 用以生產二氧化矽層之先質氣體包括矽烷；烷氧基矽烷諸 如原矽酸酯如原矽酸四乙酯（TEOS);自化矽烷諸如三氯矽 -12- 本纸張尺度適用中國國家標準（CNS ) A4規格（210'乂 297.公釐） --------—装—-----ir------1 (請先閱讀背面之>£-意事項f寫本頁) 經濟部中央標隼局員工消费合作社印製 經濟部-6-央操準局貝工消贽合作社印製 以 392288 五、發明説明（10 ) 烷；矽環丁烷及其他。 乳源包括2氣、氧、臭氧、氧化亞氮、及氧化氮之類。 —亦可含其他物^諸如氦或氬之载劑氣體；添加劑如鱗化 氫或㈣；自素或能添加第二層適宜性質之任何其他材料。 經發現-厚度至少_ nm的二氧化碎層澱積於中請之H- 樹脂塗層上時吾人之多層塗層對其後熱處理具安定性。 實驗程序 根據美國專利3,615,272製備—種氫切倍半氧燒樹脂 (札樹脂）組合物含4〇 wt% H_樹脂（Hsi〇3,丄，其數均分子量 在MOO與13,900間，溶於低分子量多二甲基矽氧烷中，在 以下實例中使用。 头個10.2 cm(4忖）式樣晶片用—HeadwayTM自轉塗覆器於 〇啊、塗覆該㈣脂歷爾鐘。本實驗所用晶片隨意係 裸晶片或有ioo nm層之PECVD二氧化矽（"Si〇2")晶片。 所用熟化系統包括一加熱板、貝悌氏培養皿、帶氮入口 的改良玻璃漏斗與一紅外溫度讀出機。加熱板先預熱至比 表1中所列溫度高2〇。〇至3CTC之溫度。然後舉高破璃漏斗 將自轉晶片f丨入貝悌氏皿，其時氮氣流爲熟化製程期間所 用之2-3倍。加熱晶片表面至所須溫度（典型須川至％秒” 減少氮流，在（表1内報告的）溫度加熱晶片適宜時間。塗層 在空氣中熟化時用上述熟化製程但不用氮沖洗。 熟化後移出加熱板表面之含晶片的貝悌氏皿與漏斗益迅 速冷却。保持氮流以迄塗層表面溫度低於3 (TC。 於是用10% SiH#在He與'Ο内經PECVD塗覆一層二氧化 -13- 本紙張尺度適用中國國家標準（CNS ) A4規格（2丨〇χ 297公兹） --------1¾衣-- (請先閲讀背面之注意事項4填寫本頁) 、νβ
---------------- · 1 I -I -1. I 經濟部中央標準局員工消費合作社印製 392288 五、發明説明（11 ) 矽於晶片。澱積期間晶片溫度爲350°C，壓力爲400 kPa (3000 Torr) ° 結果與明確處理條件顯示於表1。 其上有170 nm二氧化矽塗層的晶片非在潔淨室内製造， 塗層含粒子。破裂較小且限於粒子四周諸區。因此，相信 其中二氧化矽塗層有厚度至少100 nm之多層塗層能耐熱。 表 1 熟化條件 塗層厚 度〇 m) 1¾2庚 蓋厚度 (nm) 熱處理（破裂？是/否） 溫度 (C) 時間 (分） 氣氛 熟化循環 4 5 0 °C退火 1 4 n2 02 350 0.33 n2 1.906 100 300 N N N N 350 0.42 N2 1.916 100 300 N N N N 350 0.5 N2 1.901 100 300 N N N N 350 0.75 N2 1.926 100 300 N N N N 350 1 N2 1.922 100 300 N N N . 350 0.5 空氣 1.521 100 300 N N N . 350 1 空氣 1.502 100 300 N N N 350 2 空氣 1.522 100 300 N N N 250 1.5 空氣 1.537 100 300 N N N N 250 2 空氣 1.502 100 300 N N N N 250 1.5 空氣 1.966 100 300 N N . _ 250 1.5 空氣 2.023 100 300 N N __ -14- 本纸張尺度適用中國國家標準（CNS ) A4規格（210X 297公釐） --------1¾衣—— (請先閲讀背面之注意事項；填寫本頁) 、\=口 镍 392288 Λ7 B7 五、發明説明（12 ) 經濟部中央標準局員工消費合作社印製 250 2 空氣 1.986 100 300 N N 360 1 n2 1.963 100 1000 N N N 360 1 n2 1.877 100 1000 N N N 360 1 n2 1.916 100 1000 N N N 360 1 N2 2.035 100 1000 N N N 340 2 n2 1.987 100 1000 N N N 340 2 n2 2.007 100 1000 N N N 340 2 n2 2.056 100 1000 N N N 340 2 N2 1.947 100 1000 N N N 320 2 n2 1.971 100 1000 N N N 320 3 n2 2.009 100 1000 N N N _ 350 0.33 n2 1.955 100 無 N N Y 350 1 N2 1.922 100 無 N N Y 250 2 空氣 1.986 100 N N Y 350 2 空氣 1.522 100 N N Y 340 2 N2 1.987 100 170 N N Y 340 2 N2 2.007 100 170 N N Y 360 N2 1.963 100 170 N N Y 360 N2 1.877 100 170 N N Y _ 意指無法取得資料 -15- 本纸張尺度適用中獨國家標準（CNS ) A4規格（210X 297公釐） ---------批衣------ir-------線 -丨 (請先閲讀背面之注意事項鼻4寫本頁)

Claims (1)

  1. AS Βδ cs DS ’其中二氧化矽有厚 其中電子基底上有— 392288 7、申請專利範圍 L —種製造多層塗層之方法，包括： 塗敷含氫矽倍半氧烷樹脂之無填料組合物於基底上 形成厚度1·25 "m至2.25 之膜； 八於150 C至50(TC溫度在惰性或含氧環境中將膜加熱充 刀時間製成厚1.25至2.25厂111無破裂的不溶性塗層； 在不落性塗層外澱積一層至少厚1〇〇 nm的二氧化矽。 2·根據申請專利範園第1項之方法，其中無填料组合物亦含 —溶劑，脱除溶劑形成膜。 3·根據申請專利範圍第2項之方法，朴無填料組合物含分 至80 wt%溶劑。 - 4.根據申請專利範圍第巧之方法，其中不溶性塗料有厚度 1.5 Am至 2.2 。 又 5·«中請專利範圍第巧之方法，其中：氧切係經化取 蒸汽澱積作用澱積。 予 6. 根據申請專利範圍第1項之方法 300 nm至 2 jum。 7. 根據申請專利範圍第1項之方法， 步鈍化層厚30 nm至300 nm。 Ί 6" 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） ------、玎！------.線 -.:： /, (請先閔讀背面之注意事項再填寫本頁) 經濟部中央標準局員工消費合作社印製
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JPH1116899A (ja) 1999-01-22
US6210749B1 (en) 2001-04-03
KR19990006686A (ko) 1999-01-25
EP0883164A2 (en) 1998-12-09
EP0883164A3 (en) 2000-08-09
SG70637A1 (en) 2000-02-22

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