TW366677B - Plasma generating apparatus and ion source using the same - Google Patents

Plasma generating apparatus and ion source using the same

Info

Publication number
TW366677B
TW366677B TW087102136A TW87102136A TW366677B TW 366677 B TW366677 B TW 366677B TW 087102136 A TW087102136 A TW 087102136A TW 87102136 A TW87102136 A TW 87102136A TW 366677 B TW366677 B TW 366677B
Authority
TW
Taiwan
Prior art keywords
plasma
generating vessel
vessel
generating
coaxial line
Prior art date
Application number
TW087102136A
Other languages
English (en)
Inventor
Shuichi Maeno
Yasunori Ando
Yasuhiro Matsuda
Original Assignee
Nissin Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nissin Electric Co Ltd filed Critical Nissin Electric Co Ltd
Application granted granted Critical
Publication of TW366677B publication Critical patent/TW366677B/zh

Links

Classifications

    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05HPLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00Generating plasma; Handling plasma
    • H05H1/24Generating plasma
    • H05H1/46Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J27/00Ion beam tubes
    • H01J27/02Ion sources; Ion guns
    • H01J27/16Ion sources; Ion guns using high-frequency excitation, e.g. microwave excitation
    • H01J27/18Ion sources; Ion guns using high-frequency excitation, e.g. microwave excitation with an applied axial magnetic field
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06Sources
    • H01J2237/08Ion sources
    • H01J2237/0815Methods of ionisation
    • H01J2237/0817Microwaves

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Combustion & Propulsion (AREA)
  • Plasma Technology (AREA)
  • Electron Sources, Ion Sources (AREA)
  • Physical Vapour Deposition (AREA)
  • Chemical Vapour Deposition (AREA)
  • ing And Chemical Polishing (AREA)
TW087102136A 1997-02-14 1998-02-13 Plasma generating apparatus and ion source using the same TW366677B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9047297A JP2959508B2 (ja) 1997-02-14 1997-02-14 プラズマ発生装置

Publications (1)

Publication Number Publication Date
TW366677B true TW366677B (en) 1999-08-11

Family

ID=12771357

Family Applications (1)

Application Number Title Priority Date Filing Date
TW087102136A TW366677B (en) 1997-02-14 1998-02-13 Plasma generating apparatus and ion source using the same

Country Status (4)

Country Link
US (1) US6060836A (zh)
JP (1) JP2959508B2 (zh)
KR (1) KR19980071355A (zh)
TW (1) TW366677B (zh)

Families Citing this family (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6060718A (en) * 1998-02-26 2000-05-09 Eaton Corporation Ion source having wide output current operating range
ATE458261T1 (de) * 1998-12-11 2010-03-15 Surface Technology Systems Plc Plasmabehandlungsgerät
JP2001307899A (ja) * 2000-04-18 2001-11-02 Daihen Corp プラズマ発生装置
JP4353384B2 (ja) * 2000-04-18 2009-10-28 株式会社ダイヘン プラズマ発生装置
US20020185226A1 (en) * 2000-08-10 2002-12-12 Lea Leslie Michael Plasma processing apparatus
JP2002280197A (ja) * 2001-03-15 2002-09-27 Micro Denshi Kk プラズマ発生用の点火装置
US6611106B2 (en) * 2001-03-19 2003-08-26 The Regents Of The University Of California Controlled fusion in a field reversed configuration and direct energy conversion
FR2840451B1 (fr) * 2002-06-04 2004-08-13 Centre Nat Rech Scient Dispositif de production d'une nappe de plasma
KR20030097284A (ko) * 2002-06-20 2003-12-31 삼성전자주식회사 이온 주입 설비의 이온 소스
DE10243406A1 (de) * 2002-09-18 2004-04-01 Leybold Optics Gmbh Plasmaquelle
DE10300776B3 (de) * 2003-01-11 2004-09-02 Thales Electron Devices Gmbh Ionenbeschleuniger-Anordnung
EP1849888B1 (en) * 2005-02-16 2011-08-17 Ulvac, Inc. Vacuum deposition apparatus of the winding type
KR100689037B1 (ko) 2005-08-24 2007-03-08 삼성전자주식회사 마이크로파 공명 플라즈마 발생장치 및 그것을 구비하는플라즈마 처리 시스템
US7446326B2 (en) * 2005-08-31 2008-11-04 Varian Semiconductor Equipment Associates, Inc. Technique for improving ion implanter productivity
JP4345895B2 (ja) * 2005-10-20 2009-10-14 日新イオン機器株式会社 イオン源の運転方法およびイオン注入装置
ATE498197T1 (de) * 2005-12-23 2011-02-15 Obschestvo S Ogranichennoi Otvetstvennostiyu Stwinns Plasma-chemischer mikrowellenreaktor
US9681529B1 (en) * 2006-01-06 2017-06-13 The United States Of America As Represented By The Secretary Of The Air Force Microwave adapting plasma torch module
DE102006037144B4 (de) * 2006-08-09 2010-05-20 Roth & Rau Ag ECR-Plasmaquelle
DE102006059264A1 (de) * 2006-12-15 2008-06-19 Thales Electron Devices Gmbh Plasmabeschleunigeranordnung
JP5208547B2 (ja) * 2008-03-19 2013-06-12 東京エレクトロン株式会社 電力合成器およびマイクロ波導入機構
JP2013150809A (ja) * 2008-05-22 2013-08-08 Vladimir Yegorovich Balakin 荷電粒子癌治療システムの一部としての荷電粒子ビーム加速方法及び装置
JP5189999B2 (ja) * 2009-01-29 2013-04-24 東京エレクトロン株式会社 マイクロ波プラズマ処理装置、及びマイクロ波プラズマ処理装置のマイクロ波給電方法
JP5710209B2 (ja) 2010-01-18 2015-04-30 東京エレクトロン株式会社 電磁波給電機構およびマイクロ波導入機構
US20120326592A1 (en) * 2011-06-21 2012-12-27 Jozef Kudela Transmission Line RF Applicator for Plasma Chamber
US9048518B2 (en) * 2011-06-21 2015-06-02 Applied Materials, Inc. Transmission line RF applicator for plasma chamber
WO2013112302A1 (en) * 2012-01-27 2013-08-01 Applied Materials, Inc. Segmented antenna assembly
DE102012103425A1 (de) * 2012-04-19 2013-10-24 Roth & Rau Ag Mikrowellenplasmaerzeugungsvorrichtung und Verfahren zu deren Betrieb
JP5880474B2 (ja) * 2013-03-01 2016-03-09 株式会社デンソー 真空成膜装置
JP6680271B2 (ja) * 2017-06-23 2020-04-15 日新イオン機器株式会社 プラズマ源
JP7091074B2 (ja) * 2018-01-05 2022-06-27 株式会社日立ハイテク プラズマ処理装置
JP6788078B1 (ja) * 2019-08-01 2020-11-18 恭胤 高藤 プラズマ発生装置
JP6788136B1 (ja) * 2020-03-18 2020-11-18 恭胤 高藤 プラズマ発生装置
JP7450475B2 (ja) * 2020-06-30 2024-03-15 東京エレクトロン株式会社 プラズマ処理装置

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2208753B (en) * 1987-08-13 1991-06-26 Commw Of Australia Improvements in plasma generators
JPH01302645A (ja) * 1988-02-08 1989-12-06 Anelva Corp 放電装置
JPH02103845A (ja) * 1988-10-13 1990-04-16 Matsushita Electric Ind Co Ltd マイクロ波プラズマ装置
JPH05314918A (ja) * 1992-05-13 1993-11-26 Nissin Electric Co Ltd イオン源用マイクロ波アンテナ
JPH0746586A (ja) * 1993-07-12 1995-02-14 Toshiba Corp 放送受信機
EP0660372B1 (en) * 1993-12-21 1999-10-13 Sumitomo Heavy Industries, Ltd. Plasma beam generating method and apparatus which can generate a high-power plasma beam
US5523652A (en) * 1994-09-26 1996-06-04 Eaton Corporation Microwave energized ion source for ion implantation
JPH08287857A (ja) * 1995-04-18 1996-11-01 Kobe Steel Ltd マイクロ波イオン源

Also Published As

Publication number Publication date
JP2959508B2 (ja) 1999-10-06
US6060836A (en) 2000-05-09
KR19980071355A (ko) 1998-10-26
JPH10229000A (ja) 1998-08-25

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