TW359882B - Bipolar/CMOS integrated circuit - Google Patents

Bipolar/CMOS integrated circuit

Info

Publication number
TW359882B
TW359882B TW086117325A TW86117325A TW359882B TW 359882 B TW359882 B TW 359882B TW 086117325 A TW086117325 A TW 086117325A TW 86117325 A TW86117325 A TW 86117325A TW 359882 B TW359882 B TW 359882B
Authority
TW
Taiwan
Prior art keywords
forming
integrated circuit
bipolar
cmos integrated
protecting layer
Prior art date
Application number
TW086117325A
Other languages
English (en)
Inventor
Yvon Gris
Original Assignee
Sgs Thomson Microelectronics
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sgs Thomson Microelectronics filed Critical Sgs Thomson Microelectronics
Application granted granted Critical
Publication of TW359882B publication Critical patent/TW359882B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
    • H01L27/0623—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with bipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8248—Combination of bipolar and field-effect technology
    • H01L21/8249—Bipolar and MOS technology

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
TW086117325A 1996-11-19 1997-11-18 Bipolar/CMOS integrated circuit TW359882B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR9614412A FR2756104B1 (fr) 1996-11-19 1996-11-19 Fabrication de circuits integres bipolaires/cmos

Publications (1)

Publication Number Publication Date
TW359882B true TW359882B (en) 1999-06-01

Family

ID=9497996

Family Applications (1)

Application Number Title Priority Date Filing Date
TW086117325A TW359882B (en) 1996-11-19 1997-11-18 Bipolar/CMOS integrated circuit

Country Status (7)

Country Link
US (1) US5953600A (zh)
EP (1) EP0843354B1 (zh)
JP (1) JP3003654B2 (zh)
KR (1) KR100564890B1 (zh)
DE (1) DE69724741D1 (zh)
FR (1) FR2756104B1 (zh)
TW (1) TW359882B (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
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US9728555B2 (en) 2010-02-05 2017-08-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same

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FR2756100B1 (fr) 1996-11-19 1999-02-12 Sgs Thomson Microelectronics Transistor bipolaire a emetteur inhomogene dans un circuit integre bicmos
FR2756103B1 (fr) * 1996-11-19 1999-05-14 Sgs Thomson Microelectronics Fabrication de circuits integres bipolaires/cmos et d'un condensateur
FR2756104B1 (fr) * 1996-11-19 1999-01-29 Sgs Thomson Microelectronics Fabrication de circuits integres bipolaires/cmos
US6352887B1 (en) * 1998-03-26 2002-03-05 Texas Instruments Incorporated Merged bipolar and CMOS circuit and method
US6184110B1 (en) * 1998-04-30 2001-02-06 Sharp Laboratories Of America, Inc. Method of forming nitrogen implanted ultrathin gate oxide for dual gate CMOS devices
US6080612A (en) * 1998-05-20 2000-06-27 Sharp Laboratories Of America, Inc. Method of forming an ultra-thin SOI electrostatic discharge protection device
FR2779573B1 (fr) * 1998-06-05 2001-10-26 St Microelectronics Sa Transistor bipolaire vertical comportant une base extrinseque de rugosite reduite, et procede de fabrication
FR2790867B1 (fr) * 1999-03-12 2001-11-16 St Microelectronics Sa Procede de fabrication de transistor bipolaire
US6261932B1 (en) * 1999-07-29 2001-07-17 Fairchild Semiconductor Corp. Method of fabricating Schottky diode and related structure
JP2001217317A (ja) 2000-02-07 2001-08-10 Sony Corp 半導体装置およびその製造方法
US6410383B1 (en) 2000-03-16 2002-06-25 Sharp Laboratories Of America, Inc. Method of forming conducting diffusion barriers
US6303419B1 (en) * 2000-03-24 2001-10-16 Industrial Technology Research Institute Method for fabricating a BiCMOS device featuring twin wells and an N type epitaxial layer
US6348373B1 (en) 2000-03-29 2002-02-19 Sharp Laboratories Of America, Inc. Method for improving electrical properties of high dielectric constant films
DE10028008A1 (de) * 2000-06-06 2001-12-13 Bosch Gmbh Robert Schutzvorrichtung gegen elektrostatische Entladungen
US6271068B1 (en) 2001-01-08 2001-08-07 Taiwan Semiconductor Manufacturing Company Method for making improved polysilicon emitters for bipolar transistors on BiCMOS integrated circuits
FR2819631B1 (fr) 2001-01-12 2003-04-04 St Microelectronics Sa Procede de fabrication d'un substrat monocristallin, et circuit integre comportant un tel substrat
US7214593B2 (en) 2001-02-01 2007-05-08 International Business Machines Corporation Passivation for improved bipolar yield
SE0103036D0 (sv) * 2001-05-04 2001-09-13 Ericsson Telefon Ab L M Semiconductor process and integrated circuit
JP2003197908A (ja) * 2001-09-12 2003-07-11 Seiko Instruments Inc 半導体素子及びその製造方法
US6759730B2 (en) * 2001-09-18 2004-07-06 Agere Systems Inc. Bipolar junction transistor compatible with vertical replacement gate transistor
SE522890C2 (sv) * 2001-11-15 2004-03-16 Ericsson Telefon Ab L M Lateral pnp-transistor, integrerad krets och tllverkningsprocess för dessa
JP2003234423A (ja) * 2002-02-07 2003-08-22 Sony Corp 半導体装置及びその製造方法
SE0200414D0 (sv) * 2002-02-13 2002-02-13 Ericsson Telefon Ab L M Semiconductor fabrication process lateral pnp transistor, and integrated circuit
DE10327709A1 (de) * 2003-06-21 2005-01-13 Infineon Technologies Ag Integrierte Schaltungsanordnung mit npn- und pnp-Bipolartransistoren sowie Herstellungsverfahren
US6965133B2 (en) * 2004-03-13 2005-11-15 International Business Machines Corporation Method of base formation in a BiCMOS process
US6911681B1 (en) 2004-04-14 2005-06-28 International Business Machines Corporation Method of base formation in a BiCMOS process
US7632760B2 (en) * 2005-04-07 2009-12-15 Semiconductor Components Industries, Llc Semiconductor device having field stabilization film and method
US20070120173A1 (en) * 2005-11-28 2007-05-31 Bohumil Lojek Non-volatile memory cell with high current output line
US7989875B2 (en) * 2008-11-24 2011-08-02 Nxp B.V. BiCMOS integration of multiple-times-programmable non-volatile memories
US9184097B2 (en) * 2009-03-12 2015-11-10 System General Corporation Semiconductor devices and formation methods thereof
KR101153565B1 (ko) 2010-02-01 2012-06-12 한국과학기술원 Ｒｆ 스위치 회로
US8598008B2 (en) * 2010-10-20 2013-12-03 Texas Instruments Incorporated Stacked ESD clamp with reduced variation in clamp voltage
US10043903B2 (en) 2015-12-21 2018-08-07 Samsung Electronics Co., Ltd. Semiconductor devices with source/drain stress liner
GB2561390B (en) 2017-04-13 2020-03-11 Raytheon Systems Ltd Silicon carbide transistor
GB2561388B (en) * 2017-04-13 2019-11-06 Raytheon Systems Ltd Silicon carbide integrated circuit

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US5015594A (en) * 1988-10-24 1991-05-14 International Business Machines Corporation Process of making BiCMOS devices having closely spaced device regions
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JPH05175437A (ja) * 1991-12-20 1993-07-13 Fujitsu Ltd 半導体装置の製造方法
US5416031A (en) * 1992-09-30 1995-05-16 Sony Corporation Method of producing Bi-CMOS transistors
JP2886420B2 (ja) * 1992-10-23 1999-04-26 三菱電機株式会社 半導体装置の製造方法
JPH07106452A (ja) * 1993-10-04 1995-04-21 Mitsubishi Electric Corp 半導体装置およびその製造方法
FR2756104B1 (fr) * 1996-11-19 1999-01-29 Sgs Thomson Microelectronics Fabrication de circuits integres bipolaires/cmos

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9728555B2 (en) 2010-02-05 2017-08-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US9991288B2 (en) 2010-02-05 2018-06-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US10615179B2 (en) 2010-02-05 2020-04-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US11101295B2 (en) 2010-02-05 2021-08-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US11469255B2 (en) 2010-02-05 2022-10-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US11749686B2 (en) 2010-02-05 2023-09-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same

Also Published As

Publication number Publication date
DE69724741D1 (de) 2003-10-16
JPH10233459A (ja) 1998-09-02
KR19980042526A (ko) 1998-08-17
EP0843354B1 (fr) 2003-09-10
KR100564890B1 (ko) 2006-07-14
FR2756104B1 (fr) 1999-01-29
US5953600A (en) 1999-09-14
EP0843354A1 (fr) 1998-05-20
FR2756104A1 (fr) 1998-05-22
JP3003654B2 (ja) 2000-01-31

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Legal Events

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MM4A Annulment or lapse of patent due to non-payment of fees