TW353175B - Decoding method of synchronous semiconductor memory device and decoding circuit thereof - Google Patents

Decoding method of synchronous semiconductor memory device and decoding circuit thereof

Info

Publication number
TW353175B
TW353175B TW085113204A TW85113204A TW353175B TW 353175 B TW353175 B TW 353175B TW 085113204 A TW085113204 A TW 085113204A TW 85113204 A TW85113204 A TW 85113204A TW 353175 B TW353175 B TW 353175B
Authority
TW
Taiwan
Prior art keywords
address
decoding
memory device
semiconductor memory
read
Prior art date
Application number
TW085113204A
Other languages
English (en)
Inventor
Hee-Choul Park
Kook-Hwan Kwon
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Application granted granted Critical
Publication of TW353175B publication Critical patent/TW353175B/zh

Links

Classifications

    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F12/00—Accessing, addressing or allocating within memory systems or architectures
    • G06F12/02—Addressing or allocation; Relocation
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/06—Address interface arrangements, e.g. address buffers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2207/00—Indexing scheme relating to arrangements for writing information into, or reading information out from, a digital store
    • G11C2207/22—Control and timing of internal memory operations
    • G11C2207/2218—Late write

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Theoretical Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Static Random-Access Memory (AREA)
  • Dram (AREA)
TW085113204A 1995-11-28 1996-10-29 Decoding method of synchronous semiconductor memory device and decoding circuit thereof TW353175B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950044241A KR0184464B1 (ko) 1995-11-28 1995-11-28 동기형 반도체 메모리장치의 디코딩 회로

Publications (1)

Publication Number Publication Date
TW353175B true TW353175B (en) 1999-02-21

Family

ID=19436046

Family Applications (1)

Application Number Title Priority Date Filing Date
TW085113204A TW353175B (en) 1995-11-28 1996-10-29 Decoding method of synchronous semiconductor memory device and decoding circuit thereof

Country Status (4)

Country Link
US (1) US5815459A (zh)
JP (1) JPH09167494A (zh)
KR (1) KR0184464B1 (zh)
TW (1) TW353175B (zh)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100283470B1 (ko) * 1998-12-09 2001-03-02 윤종용 반도체 메모리 장치의 어드레스 발생회로
KR100384775B1 (ko) * 2000-11-23 2003-05-22 주식회사 하이닉스반도체 쿼드 데이터 레이트 싱크로노스 에스램의 리드/라이트를위한 워드라인 및 비트라인 구동 방법 및 그 회로
WO2005004164A1 (ja) * 2003-06-30 2005-01-13 Fujitsu Limited 半導体記憶装置
KR100875665B1 (ko) * 2007-03-30 2008-12-24 주식회사 하이닉스반도체 반도체 메모리 장치

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63146298A (ja) * 1986-12-10 1988-06-18 Mitsubishi Electric Corp 可変語長シフトレジスタ
US5255238A (en) * 1988-09-08 1993-10-19 Hitachi, Ltd. First-in first-out semiconductor memory device
US5220529A (en) * 1990-08-20 1993-06-15 Fujitsu Limited One-chip first-in first-out memory device having matched write and read operations
US5268863A (en) * 1992-07-06 1993-12-07 Motorola, Inc. Memory having a write enable controlled word line
US5369621A (en) * 1992-08-26 1994-11-29 Hewlett-Packard Company Domino style address predecoder
JPH0757469A (ja) * 1993-08-11 1995-03-03 Nec Corp メモリ回路
US5602780A (en) * 1993-10-20 1997-02-11 Texas Instruments Incorporated Serial to parallel and parallel to serial architecture for a RAM based FIFO memory
US5406518A (en) * 1994-02-08 1995-04-11 Industrial Technology Research Institute Variable length delay circuit utilizing an integrated memory device with multiple-input and multiple-output configuration
US5513139A (en) * 1994-11-04 1996-04-30 General Instruments Corp. Random access memory with circuitry for concurrently and sequentially writing-in and reading-out data at different rates

Also Published As

Publication number Publication date
KR0184464B1 (ko) 1999-05-15
JPH09167494A (ja) 1997-06-24
US5815459A (en) 1998-09-29
KR970029064A (ko) 1997-06-26

Similar Documents

Publication Publication Date Title
EP0618585A3 (en) Semiconductor memory device in synchronism with an external clock signal for outputting data bits in a small number of data lines.
EP1026692A3 (en) Data output buffers in semiconductor memory devices
US7656742B2 (en) Circuit and method for sampling valid command using extended valid address window in double pumped address scheme memory device
KR20090028585A (ko) 반도체기억장치
KR950034777A (ko) 반도체 기억장치
KR840005958A (ko) 디지탈 전송시스템의 정열기
TW353175B (en) Decoding method of synchronous semiconductor memory device and decoding circuit thereof
TW332355B (en) Semiconductor device having a latch circuit for latching externally input data
SE9003888D0 (sv) Sam data accessing circuit involving low operating current, and method thereof
KR970029620A (ko) 마이크로 제어유닛을 접속하는 외부팽창 버스 인터패이스회로 및 이 외부팽창 버스 인터패이스 회로를 결합하는 디지탈 기록 및 재생장치
EP0660328B1 (en) Method of controlling semiconductor storage circuit
KR100615081B1 (ko) 듀얼 데이터 레이트 반도체 메모리 장치 및 데이터 스트로브 신호 출력방법
KR920004981A (ko) Cd-rom 데이타 버퍼링 및 독출용 어드레스 발생방법 및 회로
JPH0528796A (ja) 半導体装置
KR100205305B1 (ko) 페이지 모드회로
TW332295B (en) Semiconductor memory with sensing stability
KR950009237B1 (ko) 동기식 반도체 메모리 장치의 데이타 처리방법
EP0768799A3 (en) Method and circuit for rearranging output data in variable-length decoder
TW326529B (en) Memory device and its control method
MY125276A (en) A method and a system to ensure that modules to be connected to an electronic apparatus are of specific type, and a module as well as a storage medium therefor
KR940017619A (ko) 음성녹음 편집 전송장치
KR920000069A (ko) 병렬, 직렬 출력 변환기능을 내장하는 메모리 ic
KR970049251A (ko) 동기식 메모리 소자에서의 고속 프리 디코딩 회로
KR970049590A (ko) 메모리의 읽기 및 쓰기제어장치
JPS6365498A (ja) 音声合成装置

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees