TW326529B - Memory device and its control method - Google Patents

Memory device and its control method

Info

Publication number
TW326529B
TW326529B TW086109949A TW86109949A TW326529B TW 326529 B TW326529 B TW 326529B TW 086109949 A TW086109949 A TW 086109949A TW 86109949 A TW86109949 A TW 86109949A TW 326529 B TW326529 B TW 326529B
Authority
TW
Taiwan
Prior art keywords
signal
address
discriminate
converted
write address
Prior art date
Application number
TW086109949A
Other languages
Chinese (zh)
Inventor
Yasunori Sato
Original Assignee
Oki Electric Ind Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP8208427A external-priority patent/JPH1049444A/en
Application filed by Oki Electric Ind Co Ltd filed Critical Oki Electric Ind Co Ltd
Application granted granted Critical
Publication of TW326529B publication Critical patent/TW326529B/en

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C8/00Arrangements for selecting an address in a digital store
    • G11C8/16Multiple access memory array, e.g. addressing one storage element via at least two independent addressing line groups
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C8/00Arrangements for selecting an address in a digital store
    • G11C8/10Decoders

Abstract

A memory device includes: 1) a discriminate circuit - receiving a read address input signal and a write address input signal, and generating a discriminate signal to have a voltage difference between read address signal and write address signal; 2) a determinate circuit - receiving a discriminate signal from the discriminate circuit, and generating a determinate signal to represent the discriminate signal range; if the discriminate output signal being within the range of the first preset value, the determinate output signal being set the first value; otherwise, the determinate output signal being set the second value; 3) an address generate circuit - receiving the input signal of a read address signal,a write address signal, and the related determinate signal simultaneously, and generating a converted read address signal and a converted write address signal; the difference value of the converted read address signal and converted write address signal at least larger than the preset value, nevertheless the difference value of the read address signal and the write address signal; 4) a write address decoder to decode the converted write address signal; 5) a read address decoder to decode the converted read address signal; 6) a memory unit - to store input information at the defined output address of the write address decoder, and to read stored information from the defined output address of the read address decoder.
TW086109949A 1996-08-07 1997-07-15 Memory device and its control method TW326529B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8208427A JPH1049444A (en) 1996-08-07 1996-08-07 Storage device and its control method

Publications (1)

Publication Number Publication Date
TW326529B true TW326529B (en) 1998-02-11

Family

ID=58262277

Family Applications (1)

Application Number Title Priority Date Filing Date
TW086109949A TW326529B (en) 1996-08-07 1997-07-15 Memory device and its control method

Country Status (2)

Country Link
KR (1) KR100338402B1 (en)
TW (1) TW326529B (en)

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2999869B2 (en) * 1991-11-15 2000-01-17 沖電気工業株式会社 Memory access method

Also Published As

Publication number Publication date
KR19980018484A (en) 1998-06-05
KR100338402B1 (en) 2002-07-18

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