TW346687B - Package of semiconductor laser diode and compact disk with two-wavelength read/write head - Google Patents

Package of semiconductor laser diode and compact disk with two-wavelength read/write head

Info

Publication number
TW346687B
TW346687B TW086113360A TW86113360A TW346687B TW 346687 B TW346687 B TW 346687B TW 086113360 A TW086113360 A TW 086113360A TW 86113360 A TW86113360 A TW 86113360A TW 346687 B TW346687 B TW 346687B
Authority
TW
Taiwan
Prior art keywords
laser diode
package
wavelength
semiconductor laser
compact disk
Prior art date
Application number
TW086113360A
Other languages
English (en)
Inventor
Shyi-Fuh Shy
Tzyy-Pyng Yang
Jinn-Kang Wang
Suoo-Jy Ren
Original Assignee
Ind Tech Res Inst
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=21626995&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=TW346687(B) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Ind Tech Res Inst filed Critical Ind Tech Res Inst
Priority to TW086113360A priority Critical patent/TW346687B/zh
Priority to US09/063,738 priority patent/US6188132B1/en
Priority to JP10127013A priority patent/JPH1197804A/ja
Application granted granted Critical
Publication of TW346687B publication Critical patent/TW346687B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/023—Mount members, e.g. sub-mount members
    • H01S5/02325—Mechanically integrated components on mount members or optical micro-benches
    • H01S5/02326—Arrangements for relative positioning of laser diodes and optical components, e.g. grooves in the mount to fix optical fibres or lenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4912—Layout
    • H01L2224/49171—Fan-out arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14618—Containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14625—Optical elements or arrangements associated with the device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/02208—Mountings; Housings characterised by the shape of the housings
    • H01S5/02212—Can-type, e.g. TO-CAN housings with emission along or parallel to symmetry axis
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0225—Out-coupling of light
    • H01S5/02255—Out-coupling of light using beam deflecting elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4012—Beam combining, e.g. by the use of fibres, gratings, polarisers, prisms
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H01S5/4043—Edge-emitting structures with vertically stacked active layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4087—Array arrangements, e.g. constituted by discrete laser diodes or laser bar emitting more than one wavelength

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Optical Head (AREA)
  • Semiconductor Lasers (AREA)
TW086113360A 1997-09-15 1997-09-15 Package of semiconductor laser diode and compact disk with two-wavelength read/write head TW346687B (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
TW086113360A TW346687B (en) 1997-09-15 1997-09-15 Package of semiconductor laser diode and compact disk with two-wavelength read/write head
US09/063,738 US6188132B1 (en) 1997-09-15 1998-04-21 Two-wavelength semiconductor laser diode package for use on the read/write head of an optical drive capable of reading different types of optical discs
JP10127013A JPH1197804A (ja) 1997-09-15 1998-05-11 二波長半導体レーザ・ダイオード・パッケージ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW086113360A TW346687B (en) 1997-09-15 1997-09-15 Package of semiconductor laser diode and compact disk with two-wavelength read/write head

Publications (1)

Publication Number Publication Date
TW346687B true TW346687B (en) 1998-12-01

Family

ID=21626995

Family Applications (1)

Application Number Title Priority Date Filing Date
TW086113360A TW346687B (en) 1997-09-15 1997-09-15 Package of semiconductor laser diode and compact disk with two-wavelength read/write head

Country Status (3)

Country Link
US (1) US6188132B1 (zh)
JP (1) JPH1197804A (zh)
TW (1) TW346687B (zh)

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JP2000223791A (ja) 1999-02-04 2000-08-11 Sharp Corp 半導体レーザ装置およびその製造方法
JP2000353332A (ja) * 1999-04-19 2000-12-19 Samsung Electronics Co Ltd 光出力モジュール及びこれを採用した互換型光ピックアップ装置
US7150031B1 (en) * 2000-06-09 2006-12-12 Scientific-Atlanta, Inc. System and method for reminders of upcoming rentable media offerings
JP4604304B2 (ja) * 1999-07-09 2011-01-05 ソニー株式会社 レーザ装置、光学ヘッド及び光記録再生装置
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JP2001184698A (ja) * 1999-12-22 2001-07-06 Pioneer Electronic Corp 光ピックアップ装置
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JP2001229570A (ja) 2000-02-09 2001-08-24 Pioneer Electronic Corp 光ピックアップ装置及びレーザダイオードチップ
JP4589539B2 (ja) * 2000-02-18 2010-12-01 パナソニック株式会社 半導体レーザ装置及びその製造方法
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JP5227525B2 (ja) * 2007-03-23 2013-07-03 株式会社日立製作所 生体光計測装置
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US8330304B2 (en) * 2009-03-27 2012-12-11 Dell Products L.P. System and method for assembly of component devices into an information handling system
JP5522977B2 (ja) * 2009-06-09 2014-06-18 三菱電機株式会社 多波長半導体レーザ装置
GB2477458B (en) * 2009-06-09 2012-03-07 Mitsubishi Electric Corp Multi-wavelength semiconductor laser device
US8605763B2 (en) 2010-03-31 2013-12-10 Microsoft Corporation Temperature measurement and control for laser and light-emitting diodes
KR101118841B1 (ko) 2010-08-13 2012-02-24 광주대학교산학협력단 집적형 두 파장 광 송신 모듈
TWI602267B (zh) * 2014-06-13 2017-10-11 矽品精密工業股份有限公司 封裝結構及其製法
JP6303931B2 (ja) * 2014-08-29 2018-04-04 日亜化学工業株式会社 発光装置
CN112041985A (zh) 2018-04-28 2020-12-04 深圳市大疆创新科技有限公司 具有多个发射器和多个接收器的光探测和测距传感器以及相关联的系统和方法
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Also Published As

Publication number Publication date
US6188132B1 (en) 2001-02-13
JPH1197804A (ja) 1999-04-09

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