JP5227525B2 - 生体光計測装置 - Google Patents
生体光計測装置 Download PDFInfo
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Description
そこで、本発明は生体計測用の光源として、可視から赤外の複数の異なる波長で発振する半導体発光素子をひとつのカンパッケージに収納した小型光源装置およびその光源装置を搭載した生体光計測装置を提供することを目的とする。また、もうひとつには、生体計測用の光源として市場で入手困難であった700nm〜760nmの波長で発振する半導体レーザの特性安定化、高信頼化が可能となる構成を提案することを目的とする。
この波長範囲を満たすことのできる活性層として結晶成長方法が確立されていなかったために作製が困難であったGaAs基板上のInGaAsPを選ぶ。有機金属気層成長(MOVPE)装置を用いて、成長条件を実験的に最適化することでGaAs基板上にレーザの活性層相当の膜厚をもつInGaAsPを成長させることに成功した。成長条件はGaAs基板を用いた成長の常識的な範囲内のあるものであったが、装置ごとに最適化するべきものである。
なお、上記GaAs基板201は面方位が(100)面から<011>方向へ傾いたオフ基板でも良く、また、上記歪量子井戸活性層205は、障壁層に引張り歪を加えた歪補償構造でも良い。
特許文献1は生体の情報を得るために、光計測に先立ってCT計測が必要であるが、本発明では、光計測のみで生体情報を得る。特許文献2は光計測により生体情報を時系列表示できるが、その光源については波長以外の詳細な記述がない。本発明では特許文献2の信号処理理論をそのまま用いて、光計測装置に用いる光源の構成と光出力安定化の制御を提案した。
ここでは、生体計測の分光分析の精度を上げるために、半導体レーザ1〜3は、非常に近いが異なる周波数で変調されており、このときモニタ信号分離回路11としてはロックインアンプを用いるとよい。
これを第1の実施例の半導体レーザ2に適用することで生体光計測に適した光源を供給することができる。
1.格子定数aを有するGaAs基板上に設けられ、面内の格子定数awを有するIn1−xGaxAsyP1−y量子井戸層および障壁層からなる発光層を有し、前記発光層は、前記量子井戸層がε(%)=(aw−a)/a×100で定義される歪εが0.4%≦ε≦1.4%で、その組成が0.10≦y≦0.45であり、発光する波長が700nm以上760nm以下であることを特徴とする半導体レーザ装置。
2.格子定数aを有するGaAs基板上に設けられ、面内の格子定数awを有するIn1−xGaxAsyP1−y量子井戸層および障壁層からなる発光層を有し、前記発光層は、前記量子井戸層がε(%)=(aw−a)/a×100で定義される歪εが0.4%≦ε≦1.2%で、その組成が0.10≦y≦0.25であり、発光する波長が700nm以上730nm以下であることを特徴とする半導体レーザ装置。
3.格子定数aを有するGaAs基板上に設けられ、面内の格子定数awを有するIn1−xGaxAsyP1−y量子井戸層および障壁層からなる発光層を有し、前記発光層は、前記量子井戸層がε(%)=(aw−a)/a×100で定義される歪εが0.4%≦ε≦0.9%で、その組成が0.10≦y≦0.2であり、発光する波長が700nm以上720nm以下であることを特徴とする半導体レーザ装置。
4.格子定数aを有するGaAs基板上に設けられ、面内の格子定数awを有するIn1−xGaxAsyP1−y量子井戸層および障壁層からなる発光層を有し、前記発光層は、前記量子井戸層がε(%)=(aw−a)/a×100で定義される歪εが0.6%≦ε≦1.4%で、その組成が0.20≦y≦0.35であり、発光する波長が700nm以上760nm以下であることを特徴とする半導体レーザ装置。
5.格子定数aを有するGaAs基板上に設けられ、面内の格子定数awを有するIn1−xGaxAsyP1−y量子井戸層および障壁層からなる発光層を有し、前記発光層は、前記量子井戸層がε(%)=(aw−a)/a×100で定義される歪εが0.1%≦ε≦0.45%で、その組成が0.4≦y≦1.4であり、発光する波長が700nm以上760nm以下であることを特徴とする半導体レーザ装置。
6.格子定数aを有するGaAs基板上に設けられ、面内の格子定数awを有するIn1−xGaxAsyP1−y量子井戸層および障壁層からなる発光層を有し、前記発光層は、前記量子井戸層がε(%)=(aw−a)/a×100で定義される歪εが0.4%≦ε≦1.2%で、その組成が0.10≦y≦0.25であり、発光する波長が700nm以上730nm以下であることを特徴とする半導体レーザ装置。
7.所定のGaAs基板(格子定数a)上に設けられた、In1−xGaxAsyP1−y量子井戸層(面内の格子定数aw)および障壁層からなる発光層において、ε(%)=(aw−a)/a×100で定義される歪εが0.4%≦ε≦0.9%、量子井戸層の組成が0.10≦y≦0.20、波長が700nm以上720nm以下であることを特徴とする半導体発光装置を搭載したことを特徴とする半導体レーザ装置。
8.所定のGaAs基板(格子定数a)上に設けられた、In1−xGaxAsyP1−y量子井戸層(面内の格子定数aw)および障壁層からなる発光層において、ε(%)=(aw−a)/a×100で定義される歪εが0.6%≦ε≦1.4%、量子井戸層の組成が0.20≦y≦0.35、波長が725nm以上760nm以下であることを特徴とする半導体発光装置を搭載したことを特徴とする半導体レーザ装置。
Claims (10)
- 生体の表面に波長の互いに異なる複数の光信号を出射する光源装置と、
前記生体の内部を前記複数の光信号が通過して該生体の表面から放出される複数の光信号を検出する受光素子と、を備え、
前記光源装置は、サブマウント上に搭載され可視から赤外の波長範囲で互いに異なる波長を有する複数の半導体発光素子と、
前記複数の半導体発光素子に接続され光信号出力を制御して、異なる波長の光信号を放出させる駆動用回路と、
前記複数の半導体発光素子から放射される各々の光信号出力を検知する一つの光出力モニタ素子とが一つに収納されたパッケージを具備してなり、
前記一つの光出力モニタ素子で検出された複数の光信号を、該それぞれの波長を発する前記半導体発光素子に接続された前記駆動用回路の各々に帰還させることにより、前記複数の半導体発光素子の光信号出力の制御を行い、
前記パッケージはプローブに着脱可能な状態で固定され、
前記半導体発光素子の少なくとも一つが、格子定数aを有するGaAs基板上に設けられ、面内の格子定数a w を有するIn 1−x Ga x As y P 1−y 量子井戸層および障壁層からなる発光層を有し、
前記発光層は、前記量子井戸層がε(%)=(a w −a)/a×100で定義される歪εが0.4%≦ε≦1.4%で、その組成が0.10≦y≦0.45であり、発光する波長が700nm以上760nm以下であることを特徴とする生体光計測装置。 - 前記複数の光信号の波長の中で最も短い波長が、705±5nmであることを特徴とする請求項1記載の生体光計測装置。
- 前記複数の光信号のいずれかの光信号の波長が、755±5nmの範囲であることを特徴とする請求項1記載の生体光計測装置。
- 前記半導体発光素子から放射される光を拡げる手段を有することを特徴とする請求項1に記載の生体光計測装置。
- 前記半導体発光素子の光放出端面における、該光放出端面から放射される光の波長の反射率が、50%以上であることを特徴とする請求項1に記載の生体光計測装置。
- 前記半導体発光素子が、セルフパルセーション動作をすることを特徴とする請求項1に記載の生体光計測装置。
- 前記発光層は、前記量子井戸層がε(%)=(aw−a)/a×100で定義される歪εが0.4%≦ε≦1.2%で、その組成が0.10≦y≦0.25であり、発光する波長が700nm以上730nm以下であることを特徴とする請求項1に記載の生体光計測装置。
- 前記発光層は、前記量子井戸層がε(%)=(aw−a)/a×100で定義される歪εが0.4%≦ε≦0.9%で、その組成が0.10≦y≦0.2であり、発光する波長が700nm以上720nm以下であることを特徴とする請求項1に記載の生体光計測装置。
- 前記発光層は、前記量子井戸層がε(%)=(aw−a)/a×100で定義される歪εが0.6%≦ε≦1.4%で、その組成が0.20≦y≦0.35であり、発光する波長が725nm以上760nm以下であることを特徴とする請求項1に記載の生体光計測装置。
- 前記受光素子で検出された複数の光信号を受信し、該複数の光信号を波長ごとに分離する信号分離回路を備えていることを特徴とした、請求項1に記載の生体光計測装置。
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EP07021792.2A EP1972924B1 (en) | 2007-03-23 | 2007-11-09 | Light source comprising a plurality of semiconductor lasers mounted in one can and optical measurement instrument comprising such a light source |
US11/984,279 US8369913B2 (en) | 2007-03-23 | 2007-11-15 | Optical measurement instrument for living body semiconductor laser installation for living body light measuring device |
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Families Citing this family (71)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2002036015A1 (en) | 2000-10-30 | 2002-05-10 | The General Hospital Corporation | Optical methods and systems for tissue analysis |
EP1426411A1 (en) * | 2002-12-06 | 2004-06-09 | KRATON Polymers Research B.V. | Styrenic block copolymer compositions to be used for the manufacture of transparent, gel free films |
CA2519937C (en) | 2003-03-31 | 2012-11-20 | Guillermo J. Tearney | Speckle reduction in optical coherence tomography by path length encoded angular compounding |
EP2008579B1 (en) | 2003-06-06 | 2016-11-09 | The General Hospital Corporation | Process and apparatus for a wavelength tuned light source |
WO2006014392A1 (en) | 2004-07-02 | 2006-02-09 | The General Hospital Corporation | Endoscopic imaging probe comprising dual clad fibre |
ATE538714T1 (de) | 2004-08-24 | 2012-01-15 | Gen Hospital Corp | Verfahren, system und software-anordnung zur bestimmung des elastizitätsmoduls |
WO2006024015A1 (en) | 2004-08-24 | 2006-03-02 | The General Hospital Corporation | Method and apparatus for imaging of vessel segments |
EP1816949A1 (en) | 2004-11-29 | 2007-08-15 | The General Hospital Corporation | Arrangements, devices, endoscopes, catheters and methods for performing optical imaging by simultaneously illuminating and detecting multiple points on a sample |
EP2085929A1 (en) | 2005-04-28 | 2009-08-05 | The General Hospital Corporation | Evaluating optical coherence tomography information for an anatomical structure |
JP5702049B2 (ja) | 2005-06-01 | 2015-04-15 | ザ ジェネラル ホスピタル コーポレイション | 位相分解光学周波数領域画像化を行うための装置、方法及びシステム |
EP2207008A1 (en) | 2005-08-09 | 2010-07-14 | The General Hospital Corporation | Apparatus and method for performing polarization-based quadrature demodulation in optical coherence tomography |
EP1928306B1 (en) | 2005-09-29 | 2021-01-13 | General Hospital Corporation | Optical coherence tomography systems and methods including fluorescence microscopic imaging of one or more biological structures |
US8145018B2 (en) | 2006-01-19 | 2012-03-27 | The General Hospital Corporation | Apparatus for obtaining information for a structure using spectrally-encoded endoscopy techniques and methods for producing one or more optical arrangements |
EP2289398A3 (en) | 2006-01-19 | 2011-04-06 | The General Hospital Corporation | Methods and systems for optical imaging of epithelial luminal organs by beam scanning thereof |
EP2659851A3 (en) | 2006-02-01 | 2014-01-15 | The General Hospital Corporation | Apparatus for applying a plurality of electro-magnetic radiations to a sample |
JP5524487B2 (ja) | 2006-02-01 | 2014-06-18 | ザ ジェネラル ホスピタル コーポレイション | コンフォーマルレーザ治療手順を用いてサンプルの少なくとも一部分に電磁放射を放射する方法及びシステム。 |
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US8577434B2 (en) | 2007-12-27 | 2013-11-05 | Covidien Lp | Coaxial LED light sources |
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TW200947893A (en) * | 2008-05-08 | 2009-11-16 | Truelight Corp | Dual-wavelength laser element for fiber communication |
EP2309923B1 (en) | 2008-07-14 | 2020-11-25 | The General Hospital Corporation | Apparatus and methods for color endoscopy |
US8937724B2 (en) | 2008-12-10 | 2015-01-20 | The General Hospital Corporation | Systems and methods for extending imaging depth range of optical coherence tomography through optical sub-sampling |
US9615748B2 (en) | 2009-01-20 | 2017-04-11 | The General Hospital Corporation | Endoscopic biopsy apparatus, system and method |
CN104134928A (zh) | 2009-02-04 | 2014-11-05 | 通用医疗公司 | 利用高速光学波长调谐源的设备和方法 |
US8611382B2 (en) | 2009-02-25 | 2013-12-17 | Koninklijke Philips N.V. | Output power stabilization for laser diodes using the photon-cooling dependent laser voltage |
CN102469943A (zh) | 2009-07-14 | 2012-05-23 | 通用医疗公司 | 用于测量脉管内流动和压力的设备、系统和方法 |
JP2011151357A (ja) * | 2009-12-21 | 2011-08-04 | Ricoh Co Ltd | 光デバイス、光走査装置及び画像形成装置 |
PT2542154T (pt) | 2010-03-05 | 2020-11-25 | Massachusetts Gen Hospital | Aparelho para proporcionar radiação eletromagnética a uma amostra |
JP5834414B2 (ja) | 2010-03-18 | 2015-12-24 | 株式会社リコー | 面発光レーザモジュール、光走査装置及び画像形成装置 |
US9069130B2 (en) * | 2010-05-03 | 2015-06-30 | The General Hospital Corporation | Apparatus, method and system for generating optical radiation from biological gain media |
WO2011150069A2 (en) | 2010-05-25 | 2011-12-01 | The General Hospital Corporation | Apparatus, systems, methods and computer-accessible medium for spectral analysis of optical coherence tomography images |
WO2011149972A2 (en) | 2010-05-25 | 2011-12-01 | The General Hospital Corporation | Systems, devices, methods, apparatus and computer-accessible media for providing optical imaging of structures and compositions |
US10285568B2 (en) | 2010-06-03 | 2019-05-14 | The General Hospital Corporation | Apparatus and method for devices for imaging structures in or at one or more luminal organs |
US20130072804A1 (en) * | 2010-08-31 | 2013-03-21 | Shimadzu Corporation | Light transmitting probe, light receiving probe, light transmitting and receiving probe, and light measurement device using same |
US8649838B2 (en) | 2010-09-22 | 2014-02-11 | Covidien Lp | Wavelength switching for pulse oximetry |
EP2632324A4 (en) | 2010-10-27 | 2015-04-22 | Gen Hospital Corp | DEVICES, SYSTEMS AND METHOD FOR MEASURING BLOOD PRESSURE IN AT LEAST ONE VESSEL |
US8818473B2 (en) | 2010-11-30 | 2014-08-26 | Covidien Lp | Organic light emitting diodes and photodetectors |
WO2013013049A1 (en) | 2011-07-19 | 2013-01-24 | The General Hospital Corporation | Systems, methods, apparatus and computer-accessible-medium for providing polarization-mode dispersion compensation in optical coherence tomography |
US8537873B2 (en) * | 2011-07-20 | 2013-09-17 | Jds Uniphase Corporation | High power surface mount technology package for side emitting laser diode |
US9037204B2 (en) | 2011-09-07 | 2015-05-19 | Covidien Lp | Filtered detector array for optical patient sensors |
WO2013066631A1 (en) | 2011-10-18 | 2013-05-10 | The General Hospital Corporation | Apparatus and methods for producing and/or providing recirculating optical delay(s) |
JP6192086B2 (ja) * | 2012-03-27 | 2017-09-06 | 国立研究開発法人情報通信研究機構 | 多波長測定装置 |
EP2833776A4 (en) | 2012-03-30 | 2015-12-09 | Gen Hospital Corp | IMAGING SYSTEM, METHOD AND DISTAL FIXATION FOR MULTIDIRECTIONAL FIELD ENDOSCOPY |
US9401582B2 (en) * | 2012-05-08 | 2016-07-26 | M/A-Com Technology Solutions Holdings, Inc. | Lasers with beam-shape modification |
WO2013177154A1 (en) | 2012-05-21 | 2013-11-28 | The General Hospital Corporation | Apparatus, device and method for capsule microscopy |
EP2888616A4 (en) | 2012-08-22 | 2016-04-27 | Gen Hospital Corp | SYSTEM, METHOD AND COMPUTER-ACCESSIBLE MEDIA FOR MANUFACTURING MINIATURE ENDOSCOPES USING SOFT LITHOGRAPHY |
EP2948758B1 (en) | 2013-01-28 | 2024-03-13 | The General Hospital Corporation | Apparatus for providing diffuse spectroscopy co-registered with optical frequency domain imaging |
WO2014120791A1 (en) | 2013-01-29 | 2014-08-07 | The General Hospital Corporation | Apparatus, systems and methods for providing information regarding the aortic valve |
WO2014121082A1 (en) | 2013-02-01 | 2014-08-07 | The General Hospital Corporation | Objective lens arrangement for confocal endomicroscopy |
US10478072B2 (en) | 2013-03-15 | 2019-11-19 | The General Hospital Corporation | Methods and system for characterizing an object |
WO2014186353A1 (en) | 2013-05-13 | 2014-11-20 | The General Hospital Corporation | Detecting self-interefering fluorescence phase and amplitude |
DE102013224420A1 (de) | 2013-05-13 | 2014-11-13 | Osram Gmbh | Laserbauelement und Verfahren zur seiner Herstellung |
US9008139B2 (en) | 2013-06-28 | 2015-04-14 | Jds Uniphase Corporation | Structure and method for edge-emitting diode package having deflectors and diffusers |
US10117576B2 (en) | 2013-07-19 | 2018-11-06 | The General Hospital Corporation | System, method and computer accessible medium for determining eye motion by imaging retina and providing feedback for acquisition of signals from the retina |
EP4349242A2 (en) | 2013-07-19 | 2024-04-10 | The General Hospital Corporation | Imaging apparatus and method which utilizes multidirectional field of view endoscopy |
WO2015013651A2 (en) | 2013-07-26 | 2015-01-29 | The General Hospital Corporation | System, apparatus and method utilizing optical dispersion for fourier-domain optical coherence tomography |
WO2015105870A1 (en) | 2014-01-08 | 2015-07-16 | The General Hospital Corporation | Method and apparatus for microscopic imaging |
WO2015116986A2 (en) | 2014-01-31 | 2015-08-06 | The General Hospital Corporation | System and method for facilitating manual and/or automatic volumetric imaging with real-time tension or force feedback using a tethered imaging device |
WO2015153982A1 (en) | 2014-04-04 | 2015-10-08 | The General Hospital Corporation | Apparatus and method for controlling propagation and/or transmission of electromagnetic radiation in flexible waveguide(s) |
US10548518B2 (en) * | 2014-06-23 | 2020-02-04 | Hitachi, Ltd. | Biophotonic measurement device and method |
ES2907287T3 (es) | 2014-07-25 | 2022-04-22 | Massachusetts Gen Hospital | Aparato para imagenología y diagnóstico in vivo |
JP6790412B2 (ja) * | 2016-03-28 | 2020-11-25 | 富士ゼロックス株式会社 | 生体情報測定装置 |
WO2018111829A1 (en) * | 2016-12-16 | 2018-06-21 | Siemens Healthcare Diagnostics Inc. | Simultaneous measurement of multiple analytes of a liquid assay |
DE102017110216B4 (de) * | 2017-05-11 | 2023-03-09 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronisches Sensormodul und Verfahren zur Herstellung eines optoelektronischen Sensormoduls |
US10374386B1 (en) * | 2018-06-07 | 2019-08-06 | Finisar Corporation | Chip on carrier |
CA3106626A1 (en) | 2018-07-16 | 2020-01-23 | Bbi Medical Innovations, Llc | Perfusion and oxygenation measurement |
JP2020128940A (ja) * | 2019-02-08 | 2020-08-27 | アズビル株式会社 | 測定装置、測定システムおよび測定方法 |
DE102020110658A1 (de) | 2020-04-20 | 2021-10-21 | Schott Ag | Multilaser-Anordnung, insbesondere RGB-Lasermodul sowie diese umfassende Vorrichtungen |
Family Cites Families (33)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2956777B2 (ja) * | 1989-02-15 | 1999-10-04 | 株式会社日立製作所 | 生体光計測方法およびそのための装置 |
US5203329A (en) * | 1989-10-05 | 1993-04-20 | Colin Electronics Co., Ltd. | Noninvasive reflectance oximeter sensor providing controlled minimum optical detection depth |
US5291884A (en) * | 1991-02-07 | 1994-03-08 | Minnesota Mining And Manufacturing Company | Apparatus for measuring a blood parameter |
JPH0742417B2 (ja) | 1991-09-27 | 1995-05-10 | ルアン株式会社 | 染料組成物、染色方法、及び染色蛋白繊維 |
JP2601665Y2 (ja) * | 1992-04-30 | 1999-11-29 | 株式会社島津製作所 | 光生体計測装置 |
AU7828694A (en) * | 1993-08-24 | 1995-03-22 | Mark R. Robinson | A robust accurate non-invasive analyte monitor |
US5421329A (en) * | 1994-04-01 | 1995-06-06 | Nellcor, Inc. | Pulse oximeter sensor optimized for low saturation |
JP3364819B2 (ja) * | 1994-04-28 | 2003-01-08 | 日本光電工業株式会社 | 血中吸光物質濃度測定装置 |
JP3359756B2 (ja) | 1994-10-06 | 2002-12-24 | 株式会社日立製作所 | 生体光計測装置 |
US5638816A (en) * | 1995-06-07 | 1997-06-17 | Masimo Corporation | Active pulse blood constituent monitoring |
JPH09164722A (ja) * | 1995-12-18 | 1997-06-24 | Canon Inc | 複数ビーム書込装置 |
JPH09307183A (ja) * | 1996-05-10 | 1997-11-28 | Sony Corp | 半導体レーザ |
JPH10242559A (ja) * | 1997-02-24 | 1998-09-11 | Nippon Telegr & Teleph Corp <Ntt> | 半導体レーザ |
TW346687B (en) * | 1997-09-15 | 1998-12-01 | Ind Tech Res Inst | Package of semiconductor laser diode and compact disk with two-wavelength read/write head |
JPH11186651A (ja) * | 1997-12-19 | 1999-07-09 | Sony Corp | 集積型半導体発光装置 |
CA2345731A1 (en) * | 1998-09-29 | 2000-04-06 | Mallinckrodt Inc. | Oximeter sensor with encoded temperature characteristic |
JP2000307197A (ja) * | 1999-04-21 | 2000-11-02 | Fuji Photo Film Co Ltd | 半導体レーザ装置 |
JP3486900B2 (ja) * | 2000-02-15 | 2004-01-13 | ソニー株式会社 | 発光装置およびそれを用いた光装置 |
US20020163952A1 (en) * | 2001-03-01 | 2002-11-07 | Wen-Yen Hwang | VCSEL with single lasing-reflectivity peak reflector |
JP2003152281A (ja) * | 2001-11-15 | 2003-05-23 | Sharp Corp | 半導体レーザ素子およびそれを用いた光ディスク装置 |
JP2004158666A (ja) * | 2002-11-07 | 2004-06-03 | Sharp Corp | 半導体レーザ装置および光ディスク再生記録装置 |
JP3982396B2 (ja) * | 2002-11-26 | 2007-09-26 | セイコーエプソン株式会社 | 光学式センサ、カード型情報記録媒体及びそれを用いた情報処理システム |
JP2004207420A (ja) | 2002-12-25 | 2004-07-22 | Toshiba Corp | レーザ装置および映像表示装置 |
US7218657B2 (en) * | 2003-07-09 | 2007-05-15 | Sumitomo Electric Industries, Ltd. | Optical transmitting module having a can type package and providing a temperature sensor therein |
JP2005064483A (ja) * | 2003-07-30 | 2005-03-10 | Sumitomo Electric Ind Ltd | 発光モジュール |
EP1690495B1 (en) * | 2003-11-04 | 2010-09-15 | Hitachi, Ltd. | Biological photometric equipment |
JP4403453B2 (ja) * | 2003-11-13 | 2010-01-27 | 株式会社島津製作所 | 頭表座標を脳表座標に変換する方法と、その変換データを利用する経頭蓋的脳機能測定装置 |
US7558307B2 (en) * | 2004-02-16 | 2009-07-07 | Sharp Kabushiki Kaisha | Semiconductor laser device, semiconductor laser device manufacturing method, optical disk apparatus and optical transmission system |
JP4121494B2 (ja) * | 2004-02-16 | 2008-07-23 | シャープ株式会社 | 半導体レーザ素子、半導体レーザ素子の製造方法、光ディスク装置および光伝送システム |
JP2006073877A (ja) * | 2004-09-03 | 2006-03-16 | Sharp Corp | 半導体レーザ素子の検査方法 |
JP2006120884A (ja) * | 2004-10-22 | 2006-05-11 | Ricoh Co Ltd | 半導体発光素子および面発光レーザおよび面発光レーザアレイおよび画像形成装置および光ピックアップシステムおよび光送信モジュールおよび光送受信モジュールおよび光通信システム |
JP2006186243A (ja) * | 2004-12-28 | 2006-07-13 | Fuji Photo Film Co Ltd | レーザー光源、色光源およびこれを用いた光走査型カラープロジェクター装置 |
JP2006286737A (ja) * | 2005-03-31 | 2006-10-19 | Sony Corp | 発光素子モジュール、電気/光変換装置および光送信装置 |
-
2007
- 2007-03-23 JP JP2007076844A patent/JP5227525B2/ja not_active Expired - Fee Related
- 2007-11-09 EP EP07021792.2A patent/EP1972924B1/en not_active Expired - Fee Related
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