TW339475B - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- TW339475B TW339475B TW085110256A TW85110256A TW339475B TW 339475 B TW339475 B TW 339475B TW 085110256 A TW085110256 A TW 085110256A TW 85110256 A TW85110256 A TW 85110256A TW 339475 B TW339475 B TW 339475B
- Authority
- TW
- Taiwan
- Prior art keywords
- area
- conductor
- type
- belonging
- transistor
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title abstract 4
- 239000004020 conductor Substances 0.000 abstract 5
- 239000000203 mixture Substances 0.000 abstract 4
- 239000013078 crystal Substances 0.000 abstract 1
- 238000009413 insulation Methods 0.000 abstract 1
- 239000012528 membrane Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7816—Lateral DMOS transistors, i.e. LDMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
- H01L27/0255—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using diodes as protective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0843—Source or drain regions of field-effect devices
- H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
- H01L29/0852—Source or drain regions of field-effect devices of field-effect transistors with insulated gate of DMOS transistors
- H01L29/0873—Drain regions
- H01L29/0878—Impurity concentration or distribution
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/107—Substrate region of field-effect devices
- H01L29/1075—Substrate region of field-effect devices of field-effect transistors
- H01L29/1079—Substrate region of field-effect devices of field-effect transistors with insulated gate
- H01L29/1083—Substrate region of field-effect devices of field-effect transistors with insulated gate with an inactive supplementary region, e.g. for preventing punch-through, improving capacity effect or leakage current
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1095—Body region, i.e. base region, of DMOS transistors or IGBTs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/41758—Source or drain electrodes for field effect devices for lateral devices with structured layout for source or drain region, i.e. the source or drain region having cellular, interdigitated or ring structure or being curved or angular
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Bipolar Transistors (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP95201989 | 1995-07-19 |
Publications (1)
Publication Number | Publication Date |
---|---|
TW339475B true TW339475B (en) | 1998-09-01 |
Family
ID=8220510
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW085110256A TW339475B (en) | 1995-07-19 | 1996-08-22 | Semiconductor device |
Country Status (7)
Country | Link |
---|---|
US (1) | US5883413A (zh) |
EP (1) | EP0788660B1 (zh) |
JP (1) | JPH10506503A (zh) |
KR (1) | KR970706614A (zh) |
DE (1) | DE69616013T2 (zh) |
TW (1) | TW339475B (zh) |
WO (1) | WO1997004488A2 (zh) |
Families Citing this family (46)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1998049732A2 (en) * | 1997-04-28 | 1998-11-05 | Koninklijke Philips Electronics N.V. | Lateral mos transistor device |
JP2000516046A (ja) * | 1997-05-23 | 2000-11-28 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | ラテラルmosトランジスタ装置 |
US6870201B1 (en) * | 1997-11-03 | 2005-03-22 | Infineon Technologies Ag | High voltage resistant edge structure for semiconductor components |
DE19751566A1 (de) * | 1997-11-20 | 1999-06-02 | Siemens Ag | Durch einen Elektromotor servounterstützte Positioniervorrichtung, insbesondere Servolenkung für ein Kraftfahrzeug |
US6023078A (en) * | 1998-04-28 | 2000-02-08 | North Carolina State University | Bidirectional silicon carbide power devices having voltage supporting regions therein for providing improved blocking voltage capability |
KR100492981B1 (ko) * | 1998-07-31 | 2005-09-02 | 페어차일드코리아반도체 주식회사 | 래터럴 이중확산 모스 트랜지스터 및 그 제조방법 |
US6435045B1 (en) * | 1998-09-04 | 2002-08-20 | Four Dimensions, Inc. | Apparatus and method for automatically changing the probe head in a four-point probe system |
EP1157426A1 (en) * | 1999-12-20 | 2001-11-28 | Koninklijke Philips Electronics N.V. | Semiconductor device |
WO2001075979A1 (de) * | 2000-03-31 | 2001-10-11 | Ihp Gmbh-Innovations For High Performance Microelectronics | Cmos-kompatibler lateraler dmos-transistor und verfahren zur herstellung eines derartigen transistors |
KR100374627B1 (ko) * | 2000-08-04 | 2003-03-04 | 페어차일드코리아반도체 주식회사 | 고내압 아이솔레이션 영역을 갖는 고전압 반도체 소자 |
JP4447768B2 (ja) * | 2000-12-01 | 2010-04-07 | 三菱電機株式会社 | フィールドmosトランジスタおよびそれを含む半導体集積回路 |
US6552389B2 (en) * | 2000-12-14 | 2003-04-22 | Kabushiki Kaisha Toshiba | Offset-gate-type semiconductor device |
KR100393201B1 (ko) * | 2001-04-16 | 2003-07-31 | 페어차일드코리아반도체 주식회사 | 낮은 온 저항과 높은 브레이크다운 전압을 갖는 고전압수평형 디모스 트랜지스터 |
JP2002353444A (ja) * | 2001-05-28 | 2002-12-06 | Fuji Electric Co Ltd | 半導体装置 |
KR100425435B1 (ko) * | 2002-02-08 | 2004-03-30 | 페어차일드코리아반도체 주식회사 | 감소된 표면 전계 구조를 갖는 수평형 디모스 트랜지스터및 그 제조방법 |
US8089129B2 (en) * | 2002-08-14 | 2012-01-03 | Advanced Analogic Technologies, Inc. | Isolated CMOS transistors |
US7825488B2 (en) * | 2006-05-31 | 2010-11-02 | Advanced Analogic Technologies, Inc. | Isolation structures for integrated circuits and modular methods of forming the same |
US7834421B2 (en) * | 2002-08-14 | 2010-11-16 | Advanced Analogic Technologies, Inc. | Isolated diode |
US7667268B2 (en) | 2002-08-14 | 2010-02-23 | Advanced Analogic Technologies, Inc. | Isolated transistor |
US7902630B2 (en) * | 2002-08-14 | 2011-03-08 | Advanced Analogic Technologies, Inc. | Isolated bipolar transistor |
US7812403B2 (en) * | 2002-08-14 | 2010-10-12 | Advanced Analogic Technologies, Inc. | Isolation structures for integrated circuit devices |
US7956391B2 (en) | 2002-08-14 | 2011-06-07 | Advanced Analogic Technologies, Inc. | Isolated junction field-effect transistor |
US7939420B2 (en) * | 2002-08-14 | 2011-05-10 | Advanced Analogic Technologies, Inc. | Processes for forming isolation structures for integrated circuit devices |
US20080197408A1 (en) * | 2002-08-14 | 2008-08-21 | Advanced Analogic Technologies, Inc. | Isolated quasi-vertical DMOS transistor |
US8513087B2 (en) * | 2002-08-14 | 2013-08-20 | Advanced Analogic Technologies, Incorporated | Processes for forming isolation structures for integrated circuit devices |
JP4326835B2 (ja) * | 2003-05-20 | 2009-09-09 | 三菱電機株式会社 | 半導体装置、半導体装置の製造方法及び半導体装置の製造プロセス評価方法 |
US6927453B2 (en) * | 2003-09-30 | 2005-08-09 | Agere Systems Inc. | Metal-oxide-semiconductor device including a buried lightly-doped drain region |
KR100722700B1 (ko) * | 2004-03-26 | 2007-05-30 | 산켄덴키 가부시키가이샤 | 반도체장치 |
JP2006202810A (ja) | 2005-01-18 | 2006-08-03 | Sharp Corp | 横型二重拡散型mosトランジスタおよびその製造方法 |
JP4927340B2 (ja) | 2005-02-24 | 2012-05-09 | オンセミコンダクター・トレーディング・リミテッド | 半導体装置 |
JP2006237224A (ja) * | 2005-02-24 | 2006-09-07 | Sanyo Electric Co Ltd | 半導体装置 |
JP4785113B2 (ja) * | 2005-02-24 | 2011-10-05 | オンセミコンダクター・トレーディング・リミテッド | 半導体装置 |
KR100867977B1 (ko) | 2006-10-11 | 2008-11-10 | 한국과학기술원 | 인도시아닌 그린 혈중 농도 역학을 이용한 조직 관류 분석장치 및 그를 이용한 조직 관류 분석방법 |
JP4616856B2 (ja) * | 2007-03-27 | 2011-01-19 | 株式会社日立製作所 | 半導体装置、及び半導体装置の製造方法 |
US7737526B2 (en) * | 2007-03-28 | 2010-06-15 | Advanced Analogic Technologies, Inc. | Isolated trench MOSFET in epi-less semiconductor sustrate |
US7868414B2 (en) * | 2007-03-28 | 2011-01-11 | Advanced Analogic Technologies, Inc. | Isolated bipolar transistor |
US8669640B2 (en) | 2009-07-14 | 2014-03-11 | Freescale Semiconductor, Inc. | Bipolar transistor |
US8790966B2 (en) * | 2011-10-18 | 2014-07-29 | Globalfoundries Singapore Pte. Ltd. | High voltage device |
US8541862B2 (en) * | 2011-11-30 | 2013-09-24 | Freescale Semiconductor, Inc. | Semiconductor device with self-biased isolation |
US9461035B2 (en) * | 2012-12-28 | 2016-10-04 | Texas Instruments Incorporated | High performance isolated vertical bipolar junction transistor and method for forming in a CMOS integrated circuit |
CN104518023B (zh) * | 2013-09-30 | 2017-12-15 | 无锡华润上华科技有限公司 | 高压ldmos器件 |
US9257420B2 (en) * | 2014-02-04 | 2016-02-09 | Stmicroelectronics (Tours) Sas | Overvoltage protection device |
JP6455169B2 (ja) * | 2015-01-19 | 2019-01-23 | 株式会社豊田中央研究所 | 半導体装置 |
US10957792B2 (en) * | 2018-08-14 | 2021-03-23 | Infineon Technologies Ag | Semiconductor device with latchup immunity |
CN112289787B (zh) * | 2020-09-17 | 2024-01-26 | 南京通华芯微电子有限公司 | 一种具有多种控制功能的mos器件 |
CN117317024B (zh) * | 2023-11-27 | 2024-03-29 | 北京智芯微电子科技有限公司 | 高开关特性半导体器件、工艺、芯片及电子设备 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4936515B1 (zh) * | 1970-06-10 | 1974-10-01 | ||
US4300150A (en) * | 1980-06-16 | 1981-11-10 | North American Philips Corporation | Lateral double-diffused MOS transistor device |
GB2150746B (en) * | 1983-12-02 | 1988-02-24 | Habib Serag El Din El Sayed | Mos transistor with surface accumulation region |
US4989058A (en) * | 1985-11-27 | 1991-01-29 | North American Philips Corp. | Fast switching lateral insulated gate transistors |
US5386136A (en) * | 1991-05-06 | 1995-01-31 | Siliconix Incorporated | Lightly-doped drain MOSFET with improved breakdown characteristics |
US5306652A (en) * | 1991-12-30 | 1994-04-26 | Texas Instruments Incorporated | Lateral double diffused insulated gate field effect transistor fabrication process |
US5382536A (en) * | 1993-03-15 | 1995-01-17 | Texas Instruments Incorporated | Method of fabricating lateral DMOS structure |
US5369045A (en) * | 1993-07-01 | 1994-11-29 | Texas Instruments Incorporated | Method for forming a self-aligned lateral DMOS transistor |
BE1007283A3 (nl) * | 1993-07-12 | 1995-05-09 | Philips Electronics Nv | Halfgeleiderinrichting met een most voorzien van een extended draingebied voor hoge spanningen. |
JP3136885B2 (ja) * | 1994-02-02 | 2001-02-19 | 日産自動車株式会社 | パワーmosfet |
-
1996
- 1996-07-11 JP JP9506484A patent/JPH10506503A/ja not_active Ceased
- 1996-07-11 DE DE69616013T patent/DE69616013T2/de not_active Expired - Fee Related
- 1996-07-11 KR KR1019970701733A patent/KR970706614A/ko active IP Right Grant
- 1996-07-11 WO PCT/IB1996/000678 patent/WO1997004488A2/en active IP Right Grant
- 1996-07-11 EP EP96921021A patent/EP0788660B1/en not_active Expired - Lifetime
- 1996-07-16 US US08/687,110 patent/US5883413A/en not_active Expired - Fee Related
- 1996-08-22 TW TW085110256A patent/TW339475B/zh active
Also Published As
Publication number | Publication date |
---|---|
EP0788660B1 (en) | 2001-10-17 |
US5883413A (en) | 1999-03-16 |
WO1997004488A3 (en) | 1997-04-24 |
KR970706614A (ko) | 1997-11-03 |
JPH10506503A (ja) | 1998-06-23 |
DE69616013D1 (de) | 2001-11-22 |
DE69616013T2 (de) | 2002-06-06 |
EP0788660A2 (en) | 1997-08-13 |
WO1997004488A2 (en) | 1997-02-06 |
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