TW339439B - A semiconductor memory device - Google Patents

A semiconductor memory device

Info

Publication number
TW339439B
TW339439B TW083110663A TW83110663A TW339439B TW 339439 B TW339439 B TW 339439B TW 083110663 A TW083110663 A TW 083110663A TW 83110663 A TW83110663 A TW 83110663A TW 339439 B TW339439 B TW 339439B
Authority
TW
Taiwan
Prior art keywords
memory cells
semiconductor memory
memory device
memory
pulse group
Prior art date
Application number
TW083110663A
Other languages
English (en)
Inventor
Ryuichi Matsuo
Tomohisa Wada
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Application granted granted Critical
Publication of TW339439B publication Critical patent/TW339439B/zh

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1015—Read-write modes for single port memories, i.e. having either a random port or a serial port
    • G11C7/103—Read-write modes for single port memories, i.e. having either a random port or a serial port using serially addressed read-write data registers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/406—Management or control of the refreshing or charge-regeneration cycles

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Dram (AREA)
  • Read Only Memory (AREA)
  • Static Random-Access Memory (AREA)
TW083110663A 1994-10-31 1994-11-17 A semiconductor memory device TW339439B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6267654A JPH08129882A (ja) 1994-10-31 1994-10-31 半導体記憶装置

Publications (1)

Publication Number Publication Date
TW339439B true TW339439B (en) 1998-09-01

Family

ID=17447689

Family Applications (1)

Application Number Title Priority Date Filing Date
TW083110663A TW339439B (en) 1994-10-31 1994-11-17 A semiconductor memory device

Country Status (4)

Country Link
US (1) US5659515A (zh)
JP (1) JPH08129882A (zh)
KR (1) KR100211182B1 (zh)
TW (1) TW339439B (zh)

Families Citing this family (40)

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JPH0934827A (ja) * 1995-07-14 1997-02-07 Canon Inc メモリ制御装置
US6125425A (en) * 1996-03-29 2000-09-26 Intel Corporation Memory controller performing a mid transaction refresh and handling a suspend signal
KR100206600B1 (ko) * 1996-06-03 1999-07-01 김영환 싱크로노스 디램의 리프레쉬 카운터 테스트 모드방법 및 그 장치
KR100248353B1 (ko) * 1997-04-09 2000-03-15 김영환 반도체 메모리 소자
JPH1145594A (ja) * 1997-07-30 1999-02-16 Nec Ic Microcomput Syst Ltd 半導体記憶装置
US8489861B2 (en) * 1997-12-23 2013-07-16 Round Rock Research, Llc Split embedded DRAM processor
AU1075599A (en) * 1997-10-10 1999-05-03 Rambus Incorporated Dram core refresh with reduced spike current
US6343352B1 (en) 1997-10-10 2002-01-29 Rambus Inc. Method and apparatus for two step memory write operations
US6401167B1 (en) 1997-10-10 2002-06-04 Rambus Incorporated High performance cost optimized memory
JP3204384B2 (ja) * 1997-12-10 2001-09-04 エヌイーシーマイクロシステム株式会社 半導体記憶回路
JPH11203860A (ja) * 1998-01-07 1999-07-30 Nec Corp 半導体記憶装置
US6707743B2 (en) 1998-10-01 2004-03-16 Monolithic System Technology, Inc. Method and apparatus for completely hiding refresh operations in a DRAM device using multiple clock division
US5999474A (en) * 1998-10-01 1999-12-07 Monolithic System Tech Inc Method and apparatus for complete hiding of the refresh of a semiconductor memory
US6898140B2 (en) 1998-10-01 2005-05-24 Monolithic System Technology, Inc. Method and apparatus for temperature adaptive refresh in 1T-SRAM compatible memory using the subthreshold characteristics of MOSFET transistors
US6415353B1 (en) 1998-10-01 2002-07-02 Monolithic System Technology, Inc. Read/write buffers for complete hiding of the refresh of a semiconductor memory and method of operating same
US6504780B2 (en) * 1998-10-01 2003-01-07 Monolithic System Technology, Inc. Method and apparatus for completely hiding refresh operations in a dram device using clock division
US6370073B2 (en) 1998-10-01 2002-04-09 Monlithic System Technology, Inc. Single-port multi-bank memory system having read and write buffers and method of operating same
US6075740A (en) * 1998-10-27 2000-06-13 Monolithic System Technology, Inc. Method and apparatus for increasing the time available for refresh for 1-t SRAM compatible devices
JP4106811B2 (ja) * 1999-06-10 2008-06-25 富士通株式会社 半導体記憶装置及び電子装置
US6425062B1 (en) 1999-09-14 2002-07-23 Intel Corporation Controlling burst sequence in synchronous memories
JP2001118383A (ja) 1999-10-20 2001-04-27 Fujitsu Ltd リフレッシュを自動で行うダイナミックメモリ回路
KR100390160B1 (ko) * 1999-12-10 2003-07-04 손원근 옥의 원적외선 방사에너지를 흡수한 옥소금 및 그 제조방법
JP3519334B2 (ja) * 2000-02-14 2004-04-12 Ｎｅｃエレクトロニクス株式会社 半導体装置
JP3708801B2 (ja) 2000-06-16 2005-10-19 松下電器産業株式会社 半導体記憶装置
US6400631B1 (en) * 2000-09-15 2002-06-04 Intel Corporation Circuit, system and method for executing a refresh in an active memory bank
JP3705113B2 (ja) 2000-10-27 2005-10-12 セイコーエプソン株式会社 半導体メモリ装置内のワード線の活性化
CN100456387C (zh) * 2002-04-15 2009-01-28 富士通微电子株式会社 半导体存储器
US6795364B1 (en) * 2003-02-28 2004-09-21 Monolithic System Technology, Inc. Method and apparatus for lengthening the data-retention time of a DRAM device in standby mode
US20050226079A1 (en) * 2004-04-08 2005-10-13 Yiming Zhu Methods and apparatus for dual port memory devices having hidden refresh and double bandwidth
US20060190678A1 (en) * 2005-02-22 2006-08-24 Butler Douglas B Static random access memory (SRAM) compatible, high availability memory array and method employing synchronous dynamic random access memory (DRAM) in conjunction with a single DRAM cache and tag
US7506100B2 (en) * 2005-02-23 2009-03-17 United Memories, Inc. Static random access memory (SRAM) compatible, high availability memory array and method employing synchronous dynamic random access memory (DRAM) in conjunction with a data cache and separate read and write registers and tag blocks
US7274618B2 (en) * 2005-06-24 2007-09-25 Monolithic System Technology, Inc. Word line driver for DRAM embedded in a logic process
JP5256879B2 (ja) * 2008-06-23 2013-08-07 富士通セミコンダクター株式会社 半導体記憶装置
JP2010152957A (ja) * 2008-12-24 2010-07-08 Fujitsu Semiconductor Ltd インターフェース回路およびインターフェース方法
JP5446384B2 (ja) * 2009-03-30 2014-03-19 富士通セミコンダクター株式会社 インターフェース回路、メモリシステム、およびアクセス制御方法
KR20110004165A (ko) * 2009-07-07 2011-01-13 삼성전자주식회사 리플레시 피크 전류를 줄일 수 있는 멀티채널 반도체 메모리 장치 및 이 장치의 리플레시 방법
JP2012094217A (ja) * 2010-10-27 2012-05-17 Toshiba Corp 同期型半導体記憶装置
US9384826B2 (en) * 2014-12-05 2016-07-05 Texas Instruments Incorporated Circuits and methods for performance optimization of SRAM memory
US10796750B2 (en) * 2018-07-10 2020-10-06 Globalfoundries Inc. Sequential read mode static random access memory (SRAM)
US10923185B2 (en) 2019-06-04 2021-02-16 Qualcomm Incorporated SRAM with burst mode operation

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4185323A (en) * 1978-07-20 1980-01-22 Honeywell Information Systems Inc. Dynamic memory system which includes apparatus for performing refresh operations in parallel with normal memory operations
US4691303A (en) * 1985-10-31 1987-09-01 Sperry Corporation Refresh system for multi-bank semiconductor memory
JPS62165784A (ja) * 1986-01-16 1987-07-22 Mitsubishi Electric Corp 半導体記憶装置
JPH01243147A (ja) * 1988-03-25 1989-09-27 Hitachi Ltd バッファ記憶装置
JPH027141A (ja) * 1988-06-27 1990-01-11 Toshiba Corp キャッシュメモリシステム
JPH04318391A (ja) * 1991-04-16 1992-11-09 Mitsubishi Electric Corp 半導体記憶装置

Also Published As

Publication number Publication date
US5659515A (en) 1997-08-19
KR100211182B1 (ko) 1999-07-15
JPH08129882A (ja) 1996-05-21
KR960015578A (ko) 1996-05-22

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