DE69228399T2 - Speicherzellenmatrix der Multiporthalbleiterspeicheranordnungstype - Google Patents
Speicherzellenmatrix der MultiporthalbleiterspeicheranordnungstypeInfo
- Publication number
- DE69228399T2 DE69228399T2 DE69228399T DE69228399T DE69228399T2 DE 69228399 T2 DE69228399 T2 DE 69228399T2 DE 69228399 T DE69228399 T DE 69228399T DE 69228399 T DE69228399 T DE 69228399T DE 69228399 T2 DE69228399 T2 DE 69228399T2
- Authority
- DE
- Germany
- Prior art keywords
- device type
- cell matrix
- memory cell
- memory device
- port semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/409—Read-write [R-W] circuits
- G11C11/4096—Input/output [I/O] data management or control circuits, e.g. reading or writing circuits, I/O drivers or bit-line switches
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
- G11C7/1075—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers for multiport memories each having random access ports and serial ports, e.g. video RAM
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Databases & Information Systems (AREA)
- Multimedia (AREA)
- Dram (AREA)
- Static Random-Access Memory (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3041661A JP2664810B2 (ja) | 1991-03-07 | 1991-03-07 | メモリセルアレイ分割型半導体記憶装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69228399D1 DE69228399D1 (de) | 1999-03-25 |
DE69228399T2 true DE69228399T2 (de) | 1999-07-15 |
Family
ID=12614568
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69228399T Expired - Fee Related DE69228399T2 (de) | 1991-03-07 | 1992-03-06 | Speicherzellenmatrix der Multiporthalbleiterspeicheranordnungstype |
Country Status (5)
Country | Link |
---|---|
US (1) | US5249165A (de) |
EP (1) | EP0503504B1 (de) |
JP (1) | JP2664810B2 (de) |
KR (1) | KR950006303B1 (de) |
DE (1) | DE69228399T2 (de) |
Families Citing this family (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2724932B2 (ja) * | 1991-12-03 | 1998-03-09 | 三菱電機株式会社 | デュアルポートメモリ |
JP2664843B2 (ja) * | 1992-09-22 | 1997-10-22 | 株式会社東芝 | マルチポートメモリ |
JP2500740B2 (ja) * | 1993-04-06 | 1996-05-29 | 日本電気株式会社 | デュアルポ―トメモリ |
JP3253745B2 (ja) * | 1993-04-28 | 2002-02-04 | 富士通株式会社 | 半導体記憶装置 |
KR960006274B1 (ko) * | 1993-11-17 | 1996-05-13 | 삼성전자주식회사 | 듀얼포트 메모리 장치 |
JP2937717B2 (ja) * | 1993-11-24 | 1999-08-23 | 株式会社東芝 | メモリ装置 |
US5742544A (en) | 1994-04-11 | 1998-04-21 | Mosaid Technologies Incorporated | Wide databus architecture |
JPH0916470A (ja) * | 1995-07-03 | 1997-01-17 | Mitsubishi Electric Corp | 半導体記憶装置 |
US5748554A (en) * | 1996-12-20 | 1998-05-05 | Rambus, Inc. | Memory and method for sensing sub-groups of memory elements |
US6259634B1 (en) * | 2000-05-22 | 2001-07-10 | Silicon Access Networks, Inc. | Pseudo dual-port DRAM for simultaneous read/write access |
US7500075B1 (en) * | 2001-04-17 | 2009-03-03 | Rambus Inc. | Mechanism for enabling full data bus utilization without increasing data granularity |
US6584034B1 (en) * | 2001-04-23 | 2003-06-24 | Aplus Flash Technology Inc. | Flash memory array structure suitable for multiple simultaneous operations |
US6825841B2 (en) * | 2001-09-07 | 2004-11-30 | Rambus Inc. | Granularity memory column access |
TW564422B (en) * | 2002-08-09 | 2003-12-01 | Winbond Electronics Corp | Multiple bit-line memory unit and circuit |
US6794254B1 (en) | 2003-05-15 | 2004-09-21 | Taiwan Semiconductor Manufacturing Company | Embedded dual-port DRAM process |
US8190808B2 (en) * | 2004-08-17 | 2012-05-29 | Rambus Inc. | Memory device having staggered memory operations |
US7280428B2 (en) | 2004-09-30 | 2007-10-09 | Rambus Inc. | Multi-column addressing mode memory system including an integrated circuit memory device |
US8595459B2 (en) | 2004-11-29 | 2013-11-26 | Rambus Inc. | Micro-threaded memory |
US20070260841A1 (en) | 2006-05-02 | 2007-11-08 | Hampel Craig E | Memory module with reduced access granularity |
JP2008052876A (ja) * | 2006-08-28 | 2008-03-06 | Toshiba Corp | 半導体記憶装置 |
US9268719B2 (en) | 2011-08-05 | 2016-02-23 | Rambus Inc. | Memory signal buffers and modules supporting variable access granularity |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57198592A (en) * | 1981-05-29 | 1982-12-06 | Hitachi Ltd | Semiconductor memory device |
JPS58147884A (ja) * | 1982-02-26 | 1983-09-02 | Toshiba Corp | ダイナミック型半導体記憶装置 |
KR960001106B1 (ko) * | 1986-12-17 | 1996-01-18 | 가부시기가이샤 히다찌세이사꾸쇼 | 반도체 메모리 |
JPH0760595B2 (ja) * | 1988-01-12 | 1995-06-28 | 日本電気株式会社 | 半導体メモリ |
JPH01241093A (ja) * | 1988-03-22 | 1989-09-26 | Fujitsu Ltd | 半導体記憶装置 |
JP2891504B2 (ja) * | 1990-03-13 | 1999-05-17 | 三菱電機株式会社 | マルチポートメモリ |
-
1991
- 1991-03-07 JP JP3041661A patent/JP2664810B2/ja not_active Expired - Fee Related
-
1992
- 1992-03-06 US US07/846,913 patent/US5249165A/en not_active Expired - Lifetime
- 1992-03-06 EP EP92103887A patent/EP0503504B1/de not_active Expired - Lifetime
- 1992-03-06 DE DE69228399T patent/DE69228399T2/de not_active Expired - Fee Related
- 1992-03-06 KR KR1019920003705A patent/KR950006303B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
EP0503504A2 (de) | 1992-09-16 |
JPH04278284A (ja) | 1992-10-02 |
EP0503504B1 (de) | 1999-02-10 |
KR950006303B1 (ko) | 1995-06-13 |
JP2664810B2 (ja) | 1997-10-22 |
DE69228399D1 (de) | 1999-03-25 |
EP0503504A3 (de) | 1994-01-12 |
KR920018757A (ko) | 1992-10-22 |
US5249165A (en) | 1993-09-28 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8339 | Ceased/non-payment of the annual fee |