TW331644B - Dynamic memory device. - Google Patents

Dynamic memory device.

Info

Publication number
TW331644B
TW331644B TW086110014A TW86110014A TW331644B TW 331644 B TW331644 B TW 331644B TW 086110014 A TW086110014 A TW 086110014A TW 86110014 A TW86110014 A TW 86110014A TW 331644 B TW331644 B TW 331644B
Authority
TW
Taiwan
Prior art keywords
refresh
dynamic memory
refreshed
rows
memory device
Prior art date
Application number
TW086110014A
Other languages
English (en)
Inventor
Ben-Zvi Jacob
Original Assignee
Motorola Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=24744893&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=TW331644(B) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Motorola Inc filed Critical Motorola Inc
Application granted granted Critical
Publication of TW331644B publication Critical patent/TW331644B/zh

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/406—Management or control of the refreshing or charge-regeneration cycles
    • G11C11/40622—Partial refresh of memory arrays
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/406—Management or control of the refreshing or charge-regeneration cycles
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C2211/401—Indexing scheme relating to cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C2211/406—Refreshing of dynamic cells
    • G11C2211/4067—Refresh in standby or low power modes

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
TW086110014A 1996-07-15 1997-07-15 Dynamic memory device. TW331644B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US68364296A 1996-07-15 1996-07-15

Publications (1)

Publication Number Publication Date
TW331644B true TW331644B (en) 1998-05-11

Family

ID=24744893

Family Applications (1)

Application Number Title Priority Date Filing Date
TW086110014A TW331644B (en) 1996-07-15 1997-07-15 Dynamic memory device.

Country Status (7)

Country Link
US (1) US5875143A (zh)
EP (1) EP0820065A3 (zh)
JP (1) JPH1069768A (zh)
KR (1) KR980011482A (zh)
IL (1) IL121044A (zh)
SG (1) SG53006A1 (zh)
TW (1) TW331644B (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI564891B (zh) * 2011-06-30 2017-01-01 萊迪思半導體公司 促進動態記憶體元件精細更新控制之機制

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US5257233A (en) * 1990-10-31 1993-10-26 Micron Technology, Inc. Low power memory module using restricted RAM activation
KR100253276B1 (ko) * 1997-02-18 2000-05-01 김영환 메모리 소자의 셀 리프레쉬 회로
KR100363108B1 (ko) * 1998-12-30 2003-02-20 주식회사 하이닉스반도체 반도체 메모리장치와 그 장치의 리프레쉬주기 조절방법
US6167484A (en) * 1998-05-12 2000-12-26 Motorola, Inc. Method and apparatus for leveraging history bits to optimize memory refresh performance
FI990038A (fi) 1999-01-11 2000-07-12 Nokia Mobile Phones Ltd Menetelmä dynaamisen muistin virkistämiseksi
KR100355226B1 (ko) 1999-01-12 2002-10-11 삼성전자 주식회사 뱅크별로 선택적인 셀프 리프레쉬가 가능한 동적 메모리장치
US6563746B2 (en) * 1999-11-09 2003-05-13 Fujitsu Limited Circuit for entering/exiting semiconductor memory device into/from low power consumption mode and method of controlling internal circuit at low power consumption mode
DE60042500D1 (de) * 1999-11-09 2009-08-13 Fujitsu Microelectronics Ltd Halbleieterspeicheranordnung und zugehöriges Steuerungsverfahren
JP2001338489A (ja) * 2000-05-24 2001-12-07 Mitsubishi Electric Corp 半導体装置
US20020138690A1 (en) * 2001-03-23 2002-09-26 Simmonds Stephen M. System and method for performing a partial DRAM refresh
US6590822B2 (en) * 2001-05-07 2003-07-08 Samsung Electronics Co., Ltd. System and method for performing partial array self-refresh operation in a semiconductor memory device
US6738861B2 (en) * 2001-09-20 2004-05-18 Intel Corporation System and method for managing data in memory for reducing power consumption
KR100424178B1 (ko) 2001-09-20 2004-03-24 주식회사 하이닉스반도체 반도체 메모리 장치의 내부어드레스 발생회로
US20030053361A1 (en) * 2001-09-20 2003-03-20 Haitao Zhang EDRAM based architecture
DE10154770B4 (de) * 2001-11-08 2004-11-18 Infineon Technologies Ag Dynamische Speichervorrichtung mit einer Auswahleinrichtung für das selektive Ausblenden von nicht belegten Speicherzellen beim Refresh
US6570794B1 (en) 2001-12-27 2003-05-27 Infineon Technologies North America Corp. Twisted bit-line compensation for DRAM having redundancy
US6608783B2 (en) 2001-12-27 2003-08-19 Infineon Technologies North America Corp. Twisted bit-line compensation
US6603694B1 (en) * 2002-02-05 2003-08-05 Infineon Technologies North America Corp. Dynamic memory refresh circuitry
US6618314B1 (en) 2002-03-04 2003-09-09 Cypress Semiconductor Corp. Method and architecture for reducing the power consumption for memory devices in refresh operations
DE10211570A1 (de) * 2002-03-15 2003-10-09 Infineon Technologies Ag Verfahren zum Betrieb eines linearen Speichers und digitale Schaltungsanordnung mit einem linearen Speicher
US6665224B1 (en) 2002-05-22 2003-12-16 Infineon Technologies Ag Partial refresh for synchronous dynamic random access memory (SDRAM) circuits
US6778455B2 (en) * 2002-07-24 2004-08-17 Micron Technology, Inc. Method and apparatus for saving refresh current
KR100535071B1 (ko) * 2002-11-07 2005-12-07 주식회사 하이닉스반도체 셀프 리프레쉬 장치
JP4440118B2 (ja) * 2003-04-24 2010-03-24 富士通マイクロエレクトロニクス株式会社 半導体メモリ
US6862238B1 (en) 2003-09-25 2005-03-01 Infineon Technologies Ag Memory system with reduced refresh current
US20050078538A1 (en) * 2003-09-30 2005-04-14 Rainer Hoehler Selective address-range refresh
US7342841B2 (en) * 2004-12-21 2008-03-11 Intel Corporation Method, apparatus, and system for active refresh management
US7158434B2 (en) * 2005-04-29 2007-01-02 Infineon Technologies, Ag Self-refresh circuit with optimized power consumption
KR100652414B1 (ko) * 2005-06-10 2006-12-01 삼성전자주식회사 딥 파워 다운 모드일 때 일부 데이터를 보존할 수 있는메모리 장치 및 그 동작 방법
US7830690B2 (en) * 2006-10-30 2010-11-09 Intel Corporation Memory module thermal management
US7983108B2 (en) * 2008-08-04 2011-07-19 Micron Technology, Inc. Row mask addressing
US7990795B2 (en) * 2009-02-19 2011-08-02 Freescale Semiconductor, Inc. Dynamic random access memory (DRAM) refresh
JP2009295274A (ja) * 2009-09-16 2009-12-17 Renesas Technology Corp 半導体装置
KR101796116B1 (ko) 2010-10-20 2017-11-10 삼성전자 주식회사 반도체 장치, 이를 포함하는 메모리 모듈, 메모리 시스템 및 그 동작방법
KR20150017276A (ko) 2013-08-06 2015-02-16 삼성전자주식회사 리프레쉬 레버리징 효율을 향상시키는 휘발성 메모리 장치의 리프레쉬 방법

Family Cites Families (8)

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JPS6313197A (ja) * 1986-07-03 1988-01-20 Nec Corp ダイナミツク型半導体記憶装置
JPS63282997A (ja) * 1987-05-15 1988-11-18 Mitsubishi Electric Corp ブロツクアクセスメモリ
US5283885A (en) * 1988-09-09 1994-02-01 Werner Hollerbauer Storage module including a refresh device for storing start and stop refresh addresses
US5247655A (en) * 1989-11-07 1993-09-21 Chips And Technologies, Inc. Sleep mode refresh apparatus
JP3018498B2 (ja) * 1990-11-30 2000-03-13 日本電気株式会社 半導体記憶装置
US5499213A (en) * 1992-06-29 1996-03-12 Fujitsu Limited Semiconductor memory device having self-refresh function
US5331601A (en) * 1993-02-04 1994-07-19 United Memories, Inc. DRAM variable row select
US5469559A (en) * 1993-07-06 1995-11-21 Dell Usa, L.P. Method and apparatus for refreshing a selected portion of a dynamic random access memory

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI564891B (zh) * 2011-06-30 2017-01-01 萊迪思半導體公司 促進動態記憶體元件精細更新控制之機制

Also Published As

Publication number Publication date
JPH1069768A (ja) 1998-03-10
US5875143A (en) 1999-02-23
IL121044A (en) 2000-09-28
EP0820065A3 (en) 1999-09-15
KR980011482A (ko) 1998-04-30
SG53006A1 (en) 1998-09-28
EP0820065A2 (en) 1998-01-21
IL121044A0 (en) 1997-11-20

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