DE60042500D1 - Halbleieterspeicheranordnung und zugehöriges Steuerungsverfahren - Google Patents

Halbleieterspeicheranordnung und zugehöriges Steuerungsverfahren

Info

Publication number
DE60042500D1
DE60042500D1 DE60042500T DE60042500T DE60042500D1 DE 60042500 D1 DE60042500 D1 DE 60042500D1 DE 60042500 T DE60042500 T DE 60042500T DE 60042500 T DE60042500 T DE 60042500T DE 60042500 D1 DE60042500 D1 DE 60042500D1
Authority
DE
Germany
Prior art keywords
semi
control method
associated control
memory arrangement
carrier memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60042500T
Other languages
English (en)
Inventor
Shinya Fujioka
Tomohiro Kawakubo
Koichi Nishimura
Kotoku Sato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Semiconductor Ltd
Original Assignee
Fujitsu Semiconductor Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Semiconductor Ltd filed Critical Fujitsu Semiconductor Ltd
Application granted granted Critical
Publication of DE60042500D1 publication Critical patent/DE60042500D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/406—Management or control of the refreshing or charge-regeneration cycles
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/147—Voltage reference generators, voltage or current regulators; Internally lowered supply levels; Compensation for voltage drops
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2207/00—Indexing scheme relating to arrangements for writing information into, or reading information out from, a digital store
    • G11C2207/22—Control and timing of internal memory operations
    • G11C2207/2227—Standby or low power modes

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
  • Power Sources (AREA)
DE60042500T 1999-11-09 2000-09-27 Halbleieterspeicheranordnung und zugehöriges Steuerungsverfahren Expired - Lifetime DE60042500D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP31845899 1999-11-09
JP2000241019 2000-08-09

Publications (1)

Publication Number Publication Date
DE60042500D1 true DE60042500D1 (de) 2009-08-13

Family

ID=26569375

Family Applications (2)

Application Number Title Priority Date Filing Date
DE60042258T Expired - Lifetime DE60042258D1 (de) 1999-11-09 2000-09-27 Halbleiterspeicheranordnung und ihre Steuerungsverfahren
DE60042500T Expired - Lifetime DE60042500D1 (de) 1999-11-09 2000-09-27 Halbleieterspeicheranordnung und zugehöriges Steuerungsverfahren

Family Applications Before (1)

Application Number Title Priority Date Filing Date
DE60042258T Expired - Lifetime DE60042258D1 (de) 1999-11-09 2000-09-27 Halbleiterspeicheranordnung und ihre Steuerungsverfahren

Country Status (4)

Country Link
EP (7) EP2267723B1 (de)
KR (1) KR100592352B1 (de)
DE (2) DE60042258D1 (de)
TW (1) TW456033B (de)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5041631B2 (ja) * 2001-06-15 2012-10-03 ルネサスエレクトロニクス株式会社 半導体記憶装置
KR20010084970A (ko) * 2001-06-19 2001-09-07 김태진 클럭동기회로 및 내부전압회로를 갖는 반도체회로 및 장치
JP4392740B2 (ja) 2001-08-30 2010-01-06 株式会社ルネサステクノロジ 半導体記憶回路
EP1388864A3 (de) * 2002-08-08 2005-02-09 Fujitsu Limited Halbleiterspeichervorrichtung und Verfahren für das Steuern der Halbleiterspeichervorrichtung
US6850105B1 (en) 2003-09-30 2005-02-01 Starcore, Llc Method and circuitry for preserving a logic state
KR101143396B1 (ko) * 2006-10-12 2012-05-22 에스케이하이닉스 주식회사 반도체 메모리 장치의 내부전압 발생기
KR101348170B1 (ko) * 2007-01-31 2014-01-09 재단법인서울대학교산학협력재단 반도체 집적 회로 장치 및 그것의 전력 제어 방법
KR100919811B1 (ko) * 2008-03-18 2009-10-01 주식회사 하이닉스반도체 내부전압 생성회로
JP2010086642A (ja) * 2008-10-03 2010-04-15 Nec Electronics Corp 半導体装置および半導体装置の内部電源供給方法
EP2631657A1 (de) 2012-02-25 2013-08-28 Neurotune AG Immunoassay zur Detektion des 22kDa-C-terminalen-Fragments (CAF) von Agrin
US10284260B2 (en) 2013-07-15 2019-05-07 Hisense Co., Ltd. Electronic device and communication method between electronic devices
CN103701674B (zh) * 2013-12-27 2017-11-03 海信集团有限公司 电力线设备接入方法、电力线设备和电子设备
CN108108564B (zh) * 2017-12-29 2021-06-11 安徽皖通邮电股份有限公司 一种提高系统启动速度的装置和方法
CN110753163B (zh) * 2019-10-28 2021-05-18 上海市共进通信技术有限公司 用于光网络终端voip功能模块的保护装置及其方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4799495A (en) 1987-03-20 1989-01-24 National Standard Company Localization needle assembly
US5197026A (en) * 1989-04-13 1993-03-23 Microchip Technology Incorporated Transparent EEPROM backup of DRAM memories
JPH05189961A (ja) * 1992-01-17 1993-07-30 Hitachi Ltd 半導体記憶装置
JPH05299616A (ja) * 1992-04-16 1993-11-12 Hitachi Ltd 半導体記憶装置
US5461338A (en) * 1992-04-17 1995-10-24 Nec Corporation Semiconductor integrated circuit incorporated with substrate bias control circuit
US5483152A (en) * 1993-01-12 1996-01-09 United Memories, Inc. Wide range power supply for integrated circuits
IL121044A (en) * 1996-07-15 2000-09-28 Motorola Inc Dynamic memory device
KR19990070489A (ko) * 1998-02-16 1999-09-15 이병수 매직퍼즐의 센터블록 방향 전환방법
KR100284296B1 (ko) * 1999-04-13 2001-03-02 김영환 내부전원 발생회로

Also Published As

Publication number Publication date
EP2246859A1 (de) 2010-11-03
EP2083423A1 (de) 2009-07-29
EP1361580A3 (de) 2004-06-09
EP1361580A2 (de) 2003-11-12
EP2267723A1 (de) 2010-12-29
EP1100089B1 (de) 2009-05-27
DE60042258D1 (de) 2009-07-09
EP2237281A1 (de) 2010-10-06
EP2267723B1 (de) 2014-06-04
KR100592352B1 (ko) 2006-06-22
TW456033B (en) 2001-09-21
KR20010070113A (ko) 2001-07-25
EP1361580B1 (de) 2009-07-01
EP2237281B1 (de) 2013-07-17
EP2083424A1 (de) 2009-07-29
EP1100089A1 (de) 2001-05-16
EP2246859B1 (de) 2013-10-09
EP2237281B8 (de) 2013-10-23

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: FUJITSU SEMICONDUCTOR LTD., YOKOHAMA, KANAGAWA, JP

8328 Change in the person/name/address of the agent

Representative=s name: SEEGER SEEGER LINDNER PARTNERSCHAFT PATENTANWAELTE