TW328154B - Field effect transistor and CMOS element - Google Patents
Field effect transistor and CMOS elementInfo
- Publication number
- TW328154B TW328154B TW086100439A TW86100439A TW328154B TW 328154 B TW328154 B TW 328154B TW 086100439 A TW086100439 A TW 086100439A TW 86100439 A TW86100439 A TW 86100439A TW 328154 B TW328154 B TW 328154B
- Authority
- TW
- Taiwan
- Prior art keywords
- field effect
- effect transistor
- region
- channel region
- channel
- Prior art date
Links
- 230000005669 field effect Effects 0.000 title abstract 2
- 230000003247 decreasing effect Effects 0.000 abstract 1
- 239000002019 doping agent Substances 0.000 abstract 1
- 238000009413 insulation Methods 0.000 abstract 1
- 238000002955 isolation Methods 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/84—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1203—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
- H01L29/66772—Monocristalline silicon transistors on insulating substrates, e.g. quartz substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78612—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device for preventing the kink- or the snapback effect, e.g. discharging the minority carriers of the channel region for preventing bipolar effect
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10591596A JP3222380B2 (ja) | 1996-04-25 | 1996-04-25 | 電界効果トランジスタ、および、cmosトランジスタ |
Publications (1)
Publication Number | Publication Date |
---|---|
TW328154B true TW328154B (en) | 1998-03-11 |
Family
ID=14420169
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW086100439A TW328154B (en) | 1996-04-25 | 1997-01-16 | Field effect transistor and CMOS element |
Country Status (6)
Country | Link |
---|---|
US (1) | US5841170A (zh) |
EP (1) | EP0803911B1 (zh) |
JP (1) | JP3222380B2 (zh) |
KR (1) | KR100259181B1 (zh) |
DE (1) | DE69725494T2 (zh) |
TW (1) | TW328154B (zh) |
Families Citing this family (71)
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US6906383B1 (en) * | 1994-07-14 | 2005-06-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of manufacture thereof |
US6773971B1 (en) | 1994-07-14 | 2004-08-10 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing a semiconductor device having lightly-doped drain (LDD) regions |
TW451284B (en) * | 1996-10-15 | 2001-08-21 | Semiconductor Energy Lab | Semiconductor device and method of manufacturing the same |
JP3353875B2 (ja) * | 1997-01-20 | 2002-12-03 | シャープ株式会社 | Soi・mos電界効果トランジスタ |
JP3337953B2 (ja) | 1997-09-05 | 2002-10-28 | シャープ株式会社 | Soi・mosfet及びその製造方法 |
US6229177B1 (en) * | 1998-03-30 | 2001-05-08 | Advanced Micro Devices, Inc. | Semiconductor with laterally non-uniform channel doping profile |
JPH11307765A (ja) * | 1998-04-20 | 1999-11-05 | Nec Corp | 半導体装置及びその製造方法 |
US6548359B1 (en) * | 1998-08-04 | 2003-04-15 | Texas Instruments Incorporated | Asymmetrical devices for short gate length performance with disposable sidewall |
US6261886B1 (en) * | 1998-08-04 | 2001-07-17 | Texas Instruments Incorporated | Increased gate to body coupling and application to DRAM and dynamic circuits |
TW391051B (en) * | 1998-11-06 | 2000-05-21 | United Microelectronics Corp | Method for manufacturing shallow trench isolation structure |
US6909114B1 (en) | 1998-11-17 | 2005-06-21 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device having LDD regions |
US6501098B2 (en) | 1998-11-25 | 2002-12-31 | Semiconductor Energy Laboratory Co, Ltd. | Semiconductor device |
US6365917B1 (en) * | 1998-11-25 | 2002-04-02 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US6184112B1 (en) * | 1998-12-02 | 2001-02-06 | Advanced Micro Devices, Inc. | Method of forming a MOSFET transistor with a shallow abrupt retrograde dopant profile |
US7235810B1 (en) | 1998-12-03 | 2007-06-26 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of fabricating the same |
US6469317B1 (en) * | 1998-12-18 | 2002-10-22 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of fabricating the same |
US6524895B2 (en) | 1998-12-25 | 2003-02-25 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of fabricating the same |
KR100399951B1 (ko) | 1998-12-30 | 2003-12-18 | 주식회사 하이닉스반도체 | 칼라이미지센서제조방법 |
US6531713B1 (en) * | 1999-03-19 | 2003-03-11 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical device and manufacturing method thereof |
US6777254B1 (en) | 1999-07-06 | 2004-08-17 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and fabrication method thereof |
US6952020B1 (en) | 1999-07-06 | 2005-10-04 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
US6281593B1 (en) | 1999-12-06 | 2001-08-28 | International Business Machines Corporation | SOI MOSFET body contact and method of fabrication |
US7015546B2 (en) * | 2000-02-23 | 2006-03-21 | Semiconductor Research Corporation | Deterministically doped field-effect devices and methods of making same |
DE20006642U1 (de) | 2000-04-11 | 2000-08-17 | Agilent Technologies Inc | Optische Vorrichtung |
US7525165B2 (en) | 2000-04-17 | 2009-04-28 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device and manufacturing method thereof |
US6706544B2 (en) | 2000-04-19 | 2004-03-16 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device and fabricating method thereof |
TW480576B (en) * | 2000-05-12 | 2002-03-21 | Semiconductor Energy Lab | Semiconductor device and method for manufacturing same |
TWI224806B (en) * | 2000-05-12 | 2004-12-01 | Semiconductor Energy Lab | Semiconductor device and manufacturing method thereof |
TW501227B (en) * | 2000-08-11 | 2002-09-01 | Samsung Electronics Co Ltd | SOI MOSFET having body contact for preventing floating body effect and method of fabricating the same |
US6562671B2 (en) * | 2000-09-22 | 2003-05-13 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor display device and manufacturing method thereof |
JP3531671B2 (ja) * | 2001-02-02 | 2004-05-31 | シャープ株式会社 | Soimosfet及びその製造方法 |
JP3982218B2 (ja) * | 2001-02-07 | 2007-09-26 | ソニー株式会社 | 半導体装置およびその製造方法 |
US6451656B1 (en) | 2001-02-28 | 2002-09-17 | Advanced Micro Devices, Inc. | CMOS inverter configured from double gate MOSFET and method of fabricating same |
DE10126308B4 (de) * | 2001-05-30 | 2008-02-21 | Infineon Technologies Ag | Rückwärtssperrender Leistungstransistor |
US20030064550A1 (en) * | 2001-09-28 | 2003-04-03 | Layman Paul Arthur | Method of ion implantation for achieving desired dopant concentration |
JP4134545B2 (ja) * | 2001-10-02 | 2008-08-20 | 日本電気株式会社 | 半導体装置 |
US6987039B2 (en) * | 2001-10-03 | 2006-01-17 | Texas Instruments Incorporated | Forming lateral bipolar junction transistor in CMOS flow |
JP4017886B2 (ja) * | 2002-02-28 | 2007-12-05 | シャープ株式会社 | 薄膜トランジスタ装置及びその製造方法 |
US7416927B2 (en) * | 2002-03-26 | 2008-08-26 | Infineon Technologies Ag | Method for producing an SOI field effect transistor |
US7049188B2 (en) * | 2002-11-26 | 2006-05-23 | Advanced Micro Devices, Inc. | Lateral doped channel |
WO2005050712A2 (en) * | 2003-11-18 | 2005-06-02 | Halliburton Energy Services, Inc. | High-temperature memory systems |
US6949420B1 (en) * | 2004-03-12 | 2005-09-27 | Sony Corporation | Silicon-on-insulator (SOI) substrate having dual surface crystallographic orientations and method of forming same |
JP2006032921A (ja) * | 2004-06-14 | 2006-02-02 | Semiconductor Energy Lab Co Ltd | 半導体装置、及びそれらの作製方法 |
US7745293B2 (en) * | 2004-06-14 | 2010-06-29 | Semiconductor Energy Laboratory Co., Ltd | Method for manufacturing a thin film transistor including forming impurity regions by diagonal doping |
JP2006032920A (ja) * | 2004-06-14 | 2006-02-02 | Semiconductor Energy Lab Co Ltd | 半導体装置、及びそれらの作製方法 |
US20050280100A1 (en) * | 2004-06-17 | 2005-12-22 | Michael Artaki | Laterally diffused MOS device |
TWI463526B (zh) * | 2004-06-24 | 2014-12-01 | Ibm | 改良具應力矽之cmos元件的方法及以該方法製備而成的元件 |
TWI400886B (zh) * | 2005-02-28 | 2013-07-01 | Semiconductor Energy Lab | 半導體裝置和使用該半導體裝置的電子設備 |
US7271457B2 (en) | 2005-03-04 | 2007-09-18 | Bae Systems Information And Electronic Systems Integration Inc. | Abrupt channel doping profile for fermi threshold field effect transistors |
EP1742271A1 (en) * | 2005-07-08 | 2007-01-10 | STMicroelectronics S.r.l. | Power field effect transistor and manufacturing method thereof |
US7442585B2 (en) * | 2005-08-30 | 2008-10-28 | International Business Machines Corporation | MOSFET with laterally graded channel region and method for manufacturing same |
US7655511B2 (en) | 2005-11-03 | 2010-02-02 | International Business Machines Corporation | Gate electrode stress control for finFET performance enhancement |
US7635620B2 (en) | 2006-01-10 | 2009-12-22 | International Business Machines Corporation | Semiconductor device structure having enhanced performance FET device |
US20070158743A1 (en) * | 2006-01-11 | 2007-07-12 | International Business Machines Corporation | Thin silicon single diffusion field effect transistor for enhanced drive performance with stress film liners |
US7402885B2 (en) * | 2006-05-15 | 2008-07-22 | Toshiba America Electronic Components, Inc. | LOCOS on SOI and HOT semiconductor device and method for manufacturing |
US8004038B2 (en) * | 2006-05-22 | 2011-08-23 | Taiwan Semiconductor Manufacturing Company, Ltd. | Suppression of hot-carrier effects using double well for thin gate oxide LDMOS embedded in HV process |
US7585720B2 (en) * | 2006-07-05 | 2009-09-08 | Toshiba America Electronic Components, Inc. | Dual stress liner device and method |
US7790540B2 (en) | 2006-08-25 | 2010-09-07 | International Business Machines Corporation | Structure and method to use low k stress liner to reduce parasitic capacitance |
KR100847306B1 (ko) | 2007-02-14 | 2008-07-21 | 삼성전자주식회사 | 반도체 장치 및 이의 제조 방법 |
US8115254B2 (en) | 2007-09-25 | 2012-02-14 | International Business Machines Corporation | Semiconductor-on-insulator structures including a trench containing an insulator stressor plug and method of fabricating same |
US8492846B2 (en) | 2007-11-15 | 2013-07-23 | International Business Machines Corporation | Stress-generating shallow trench isolation structure having dual composition |
JP5422945B2 (ja) * | 2008-09-01 | 2014-02-19 | セイコーエプソン株式会社 | 薄膜トランジスタの製造方法および電気光学装置の製造方法 |
US8598006B2 (en) | 2010-03-16 | 2013-12-03 | International Business Machines Corporation | Strain preserving ion implantation methods |
KR102101836B1 (ko) | 2014-07-24 | 2020-04-17 | 삼성전자 주식회사 | 딜레이 셀 및 이를 적용하는 지연 동기 루프 회로와 위상 동기 루프 회로 |
US9564500B2 (en) | 2015-06-30 | 2017-02-07 | International Business Machines Corporation | Fully-depleted SOI MOSFET with U-shaped channel |
US9768254B2 (en) * | 2015-07-30 | 2017-09-19 | International Business Machines Corporation | Leakage-free implantation-free ETSOI transistors |
US10714623B2 (en) * | 2015-08-07 | 2020-07-14 | Ahmad Houssam Tarakji | Approach for an area-efficient and scalable CMOS performance based on advanced silicon-on-insulator (SOI), silicon-on-sapphire (SOS) and silicon-on-nothing (SON) technologies |
US9741857B2 (en) * | 2015-08-07 | 2017-08-22 | Ahmad Tarakji | Approach for an area-efficient and scalable CMOS performance based on advanced Silicon-On-Insulator (SOI), Silicon-On-Sapphire (SOS) and Silicon-On-Nothing (SON) technologies |
KR102345676B1 (ko) * | 2015-09-09 | 2021-12-31 | 에스케이하이닉스 주식회사 | 모스 버렉터 및 이를 포함하는 반도체 집적소자 |
CN111564496B (zh) * | 2020-04-30 | 2021-07-06 | 长江存储科技有限责任公司 | 一种半导体器件及其制造方法 |
US11810976B2 (en) | 2021-02-18 | 2023-11-07 | Semiconductor Components Industries, Llc | Semiconductor device |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60175458A (ja) | 1984-02-21 | 1985-09-09 | Toshiba Corp | 半導体装置及びその製造方法 |
JPH03175458A (ja) * | 1989-12-05 | 1991-07-30 | Ricoh Co Ltd | 電子写真装置 |
JP2660451B2 (ja) * | 1990-11-19 | 1997-10-08 | 三菱電機株式会社 | 半導体装置およびその製造方法 |
US5185280A (en) * | 1991-01-29 | 1993-02-09 | Texas Instruments Incorporated | Method of fabricating a soi transistor with pocket implant and body-to-source (bts) contact |
JPH0521800A (ja) * | 1991-07-11 | 1993-01-29 | Victor Co Of Japan Ltd | Soimosfet |
JPH05218425A (ja) * | 1992-01-31 | 1993-08-27 | Nippon Telegr & Teleph Corp <Ntt> | 電界効果型半導体装置およびその製造方法 |
JPH06268215A (ja) * | 1993-03-10 | 1994-09-22 | Hitachi Ltd | Mis型半導体装置 |
JP2848757B2 (ja) * | 1993-03-19 | 1999-01-20 | シャープ株式会社 | 電界効果トランジスタおよびその製造方法 |
US5477073A (en) * | 1993-08-20 | 1995-12-19 | Casio Computer Co., Ltd. | Thin film semiconductor device including a driver and a matrix circuit |
US5567966A (en) * | 1993-09-29 | 1996-10-22 | Texas Instruments Incorporated | Local thinning of channel region for ultra-thin film SOI MOSFET with elevated source/drain |
-
1996
- 1996-04-25 JP JP10591596A patent/JP3222380B2/ja not_active Expired - Fee Related
-
1997
- 1997-01-14 US US08/782,251 patent/US5841170A/en not_active Expired - Lifetime
- 1997-01-16 TW TW086100439A patent/TW328154B/zh not_active IP Right Cessation
- 1997-01-22 EP EP97300392A patent/EP0803911B1/en not_active Expired - Lifetime
- 1997-01-22 DE DE69725494T patent/DE69725494T2/de not_active Expired - Lifetime
- 1997-01-24 KR KR1019970001992A patent/KR100259181B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
EP0803911B1 (en) | 2003-10-15 |
DE69725494D1 (de) | 2003-11-20 |
US5841170A (en) | 1998-11-24 |
DE69725494T2 (de) | 2004-07-22 |
KR970072457A (ko) | 1997-11-07 |
JPH09293871A (ja) | 1997-11-11 |
EP0803911A3 (en) | 1998-04-15 |
KR100259181B1 (ko) | 2000-06-15 |
EP0803911A2 (en) | 1997-10-29 |
JP3222380B2 (ja) | 2001-10-29 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
MM4A | Annulment or lapse of patent due to non-payment of fees |