TW326557B - Fabrication method of bipolar transistor employs a series of fabrication processes so that the ion can be implanted independently in a coupling area and an elementary area. - Google Patents
Fabrication method of bipolar transistor employs a series of fabrication processes so that the ion can be implanted independently in a coupling area and an elementary area.Info
- Publication number
- TW326557B TW326557B TW085113155A TW85113155A TW326557B TW 326557 B TW326557 B TW 326557B TW 085113155 A TW085113155 A TW 085113155A TW 85113155 A TW85113155 A TW 85113155A TW 326557 B TW326557 B TW 326557B
- Authority
- TW
- Taiwan
- Prior art keywords
- material layer
- layer
- bipolar transistor
- area
- ion
- Prior art date
Links
- 238000000034 method Methods 0.000 title abstract 4
- 238000004519 manufacturing process Methods 0.000 title abstract 3
- 230000008878 coupling Effects 0.000 title 1
- 238000010168 coupling process Methods 0.000 title 1
- 238000005859 coupling reaction Methods 0.000 title 1
- 239000000463 material Substances 0.000 abstract 9
- 125000006850 spacer group Chemical group 0.000 abstract 3
- 238000005530 etching Methods 0.000 abstract 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 2
- 229920005591 polysilicon Polymers 0.000 abstract 2
- 238000000151 deposition Methods 0.000 abstract 1
- 238000000059 patterning Methods 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66234—Bipolar junction transistors [BJT]
- H01L29/66272—Silicon vertical transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019950061307A KR0182000B1 (ko) | 1995-12-28 | 1995-12-28 | 바이폴라 트랜지스터의 제조방법 |
Publications (1)
Publication Number | Publication Date |
---|---|
TW326557B true TW326557B (en) | 1998-02-11 |
Family
ID=19445857
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW085113155A TW326557B (en) | 1995-12-28 | 1996-10-29 | Fabrication method of bipolar transistor employs a series of fabrication processes so that the ion can be implanted independently in a coupling area and an elementary area. |
Country Status (4)
Country | Link |
---|---|
US (1) | US5747374A (zh) |
JP (1) | JPH09186170A (zh) |
KR (1) | KR0182000B1 (zh) |
TW (1) | TW326557B (zh) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100248504B1 (ko) * | 1997-04-01 | 2000-03-15 | 윤종용 | 바이폴라 트랜지스터 및 그의 제조 방법 |
US5869380A (en) * | 1998-07-06 | 1999-02-09 | Industrial Technology Research Institute | Method for forming a bipolar junction transistor |
US6444536B2 (en) * | 1999-07-08 | 2002-09-03 | Agere Systems Guardian Corp. | Method for fabricating bipolar transistors |
DE19933959A1 (de) * | 1999-07-20 | 2001-02-01 | Infineon Technologies Ag | Verfahren zur Herstellung zweier unterschiedlich dotierter benachbarter Gebiete in einem integrierten Halbleiter |
JP2005032930A (ja) * | 2003-07-10 | 2005-02-03 | Toshiba Corp | 半導体装置及びその製造方法 |
JP4093275B2 (ja) * | 2006-03-20 | 2008-06-04 | ダイキン工業株式会社 | 空気調和装置 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4545114A (en) * | 1982-09-30 | 1985-10-08 | Fujitsu Limited | Method of producing semiconductor device |
EP0239652B1 (de) * | 1986-03-22 | 1991-07-24 | Deutsche ITT Industries GmbH | Verfahren zum Herstellen einer monolithisch integrierten Schaltung mit mindestens einem bipolaren Planartransistor |
JPS6318673A (ja) * | 1986-07-11 | 1988-01-26 | Yamaha Corp | 半導体装置の製法 |
JPS6362272A (ja) * | 1986-09-02 | 1988-03-18 | Seiko Instr & Electronics Ltd | 半導体装置の製造方法 |
NL8800157A (nl) * | 1988-01-25 | 1989-08-16 | Philips Nv | Halfgeleiderinrichting en werkwijze ter vervaardiging daarvan. |
JPH01274470A (ja) * | 1988-04-26 | 1989-11-02 | Nec Corp | バイポーラ・トランジスタ装置及びその製造方法 |
US4839305A (en) * | 1988-06-28 | 1989-06-13 | Texas Instruments Incorporated | Method of making single polysilicon self-aligned transistor |
JPH0786296A (ja) * | 1993-09-10 | 1995-03-31 | Toshiba Corp | 高速バイポーラトランジスタの製造方法 |
US5593905A (en) * | 1995-02-23 | 1997-01-14 | Texas Instruments Incorporated | Method of forming stacked barrier-diffusion source and etch stop for double polysilicon BJT with patterned base link |
-
1995
- 1995-12-28 KR KR1019950061307A patent/KR0182000B1/ko not_active IP Right Cessation
-
1996
- 1996-10-29 TW TW085113155A patent/TW326557B/zh not_active IP Right Cessation
- 1996-11-18 JP JP8306215A patent/JPH09186170A/ja active Pending
- 1996-11-27 US US08/757,802 patent/US5747374A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JPH09186170A (ja) | 1997-07-15 |
KR0182000B1 (ko) | 1999-04-15 |
KR970052989A (ko) | 1997-07-29 |
US5747374A (en) | 1998-05-05 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
MM4A | Annulment or lapse of patent due to non-payment of fees |