TW326557B - Fabrication method of bipolar transistor employs a series of fabrication processes so that the ion can be implanted independently in a coupling area and an elementary area. - Google Patents

Fabrication method of bipolar transistor employs a series of fabrication processes so that the ion can be implanted independently in a coupling area and an elementary area.

Info

Publication number
TW326557B
TW326557B TW085113155A TW85113155A TW326557B TW 326557 B TW326557 B TW 326557B TW 085113155 A TW085113155 A TW 085113155A TW 85113155 A TW85113155 A TW 85113155A TW 326557 B TW326557 B TW 326557B
Authority
TW
Taiwan
Prior art keywords
material layer
layer
bipolar transistor
area
ion
Prior art date
Application number
TW085113155A
Other languages
English (en)
Inventor
Hee-Seog Jeon
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Application granted granted Critical
Publication of TW326557B publication Critical patent/TW326557B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66234—Bipolar junction transistors [BJT]
    • H01L29/66272—Silicon vertical transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Bipolar Transistors (AREA)
TW085113155A 1995-12-28 1996-10-29 Fabrication method of bipolar transistor employs a series of fabrication processes so that the ion can be implanted independently in a coupling area and an elementary area. TW326557B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950061307A KR0182000B1 (ko) 1995-12-28 1995-12-28 바이폴라 트랜지스터의 제조방법

Publications (1)

Publication Number Publication Date
TW326557B true TW326557B (en) 1998-02-11

Family

ID=19445857

Family Applications (1)

Application Number Title Priority Date Filing Date
TW085113155A TW326557B (en) 1995-12-28 1996-10-29 Fabrication method of bipolar transistor employs a series of fabrication processes so that the ion can be implanted independently in a coupling area and an elementary area.

Country Status (4)

Country Link
US (1) US5747374A (zh)
JP (1) JPH09186170A (zh)
KR (1) KR0182000B1 (zh)
TW (1) TW326557B (zh)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100248504B1 (ko) * 1997-04-01 2000-03-15 윤종용 바이폴라 트랜지스터 및 그의 제조 방법
US5869380A (en) * 1998-07-06 1999-02-09 Industrial Technology Research Institute Method for forming a bipolar junction transistor
US6444536B2 (en) * 1999-07-08 2002-09-03 Agere Systems Guardian Corp. Method for fabricating bipolar transistors
DE19933959A1 (de) * 1999-07-20 2001-02-01 Infineon Technologies Ag Verfahren zur Herstellung zweier unterschiedlich dotierter benachbarter Gebiete in einem integrierten Halbleiter
JP2005032930A (ja) * 2003-07-10 2005-02-03 Toshiba Corp 半導体装置及びその製造方法
JP4093275B2 (ja) * 2006-03-20 2008-06-04 ダイキン工業株式会社 空気調和装置

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4545114A (en) * 1982-09-30 1985-10-08 Fujitsu Limited Method of producing semiconductor device
EP0239652B1 (de) * 1986-03-22 1991-07-24 Deutsche ITT Industries GmbH Verfahren zum Herstellen einer monolithisch integrierten Schaltung mit mindestens einem bipolaren Planartransistor
JPS6318673A (ja) * 1986-07-11 1988-01-26 Yamaha Corp 半導体装置の製法
JPS6362272A (ja) * 1986-09-02 1988-03-18 Seiko Instr & Electronics Ltd 半導体装置の製造方法
NL8800157A (nl) * 1988-01-25 1989-08-16 Philips Nv Halfgeleiderinrichting en werkwijze ter vervaardiging daarvan.
JPH01274470A (ja) * 1988-04-26 1989-11-02 Nec Corp バイポーラ・トランジスタ装置及びその製造方法
US4839305A (en) * 1988-06-28 1989-06-13 Texas Instruments Incorporated Method of making single polysilicon self-aligned transistor
JPH0786296A (ja) * 1993-09-10 1995-03-31 Toshiba Corp 高速バイポーラトランジスタの製造方法
US5593905A (en) * 1995-02-23 1997-01-14 Texas Instruments Incorporated Method of forming stacked barrier-diffusion source and etch stop for double polysilicon BJT with patterned base link

Also Published As

Publication number Publication date
JPH09186170A (ja) 1997-07-15
KR0182000B1 (ko) 1999-04-15
KR970052989A (ko) 1997-07-29
US5747374A (en) 1998-05-05

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees