TW318934B - - Google Patents

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Publication number
TW318934B
TW318934B TW085110461A TW85110461A TW318934B TW 318934 B TW318934 B TW 318934B TW 085110461 A TW085110461 A TW 085110461A TW 85110461 A TW85110461 A TW 85110461A TW 318934 B TW318934 B TW 318934B
Authority
TW
Taiwan
Prior art keywords
latch
input
time
mode
clock signal
Prior art date
Application number
TW085110461A
Other languages
English (en)
Chinese (zh)
Original Assignee
Nippon Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co filed Critical Nippon Electric Co
Application granted granted Critical
Publication of TW318934B publication Critical patent/TW318934B/zh

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1078—Data input circuits, e.g. write amplifiers, data input buffers, data input registers, data input level conversion circuits
    • G11C7/1093—Input synchronization
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1015—Read-write modes for single port memories, i.e. having either a random port or a serial port
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1078—Data input circuits, e.g. write amplifiers, data input buffers, data input registers, data input level conversion circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
  • Static Random-Access Memory (AREA)
TW085110461A 1995-09-26 1996-08-28 TW318934B (esLanguage)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7273616A JP2907081B2 (ja) 1995-09-26 1995-09-26 半導体記憶装置

Publications (1)

Publication Number Publication Date
TW318934B true TW318934B (esLanguage) 1997-11-01

Family

ID=17530219

Family Applications (1)

Application Number Title Priority Date Filing Date
TW085110461A TW318934B (esLanguage) 1995-09-26 1996-08-28

Country Status (6)

Country Link
US (1) US5748553A (esLanguage)
EP (1) EP0766251B1 (esLanguage)
JP (1) JP2907081B2 (esLanguage)
KR (1) KR100222812B1 (esLanguage)
DE (1) DE69619918T2 (esLanguage)
TW (1) TW318934B (esLanguage)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2988392B2 (ja) * 1996-08-09 1999-12-13 日本電気株式会社 半導体メモリ集積回路
JPH10162573A (ja) * 1996-11-29 1998-06-19 Nec Corp 半導体記憶装置
KR100230407B1 (ko) * 1997-02-17 1999-11-15 윤종용 반도체장치의 클럭 발생회로 및 클럭발생방법
US5912846A (en) * 1997-02-28 1999-06-15 Ramtron International Corporation Serial ferroelectric random access memory architecture to equalize column accesses and improve data retention reliability by mitigating imprint effects
JP4059951B2 (ja) * 1997-04-11 2008-03-12 株式会社ルネサステクノロジ 半導体記憶装置
US5848022A (en) * 1997-05-02 1998-12-08 Integrated Silicon Solution Inc. Address enable circuit in synchronous SRAM
US5930182A (en) * 1997-08-22 1999-07-27 Micron Technology, Inc. Adjustable delay circuit for setting the speed grade of a semiconductor device
DE19929121B4 (de) * 1998-06-30 2013-02-28 Fujitsu Semiconductor Ltd. Integrierte Halbleiterschaltung
US6279071B1 (en) * 1998-07-07 2001-08-21 Mitsubishi Electric And Electronics Usa, Inc. System and method for column access in random access memories
JP4034886B2 (ja) * 1998-10-13 2008-01-16 富士通株式会社 半導体装置
US20050132128A1 (en) * 2003-12-15 2005-06-16 Jin-Yub Lee Flash memory device and flash memory system including buffer memory
US9171600B2 (en) 2013-09-04 2015-10-27 Naoki Shimizu Semiconductor memory device

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR960003526B1 (ko) * 1992-10-02 1996-03-14 삼성전자주식회사 반도체 메모리장치
US4763303A (en) * 1986-02-24 1988-08-09 Motorola, Inc. Write-drive data controller
JPS63253592A (ja) * 1987-04-10 1988-10-20 Nec Corp 集積回路
JP2830594B2 (ja) * 1992-03-26 1998-12-02 日本電気株式会社 半導体メモリ装置
JPH0737389A (ja) * 1993-07-20 1995-02-07 Mitsubishi Electric Corp 半導体装置
US5493530A (en) * 1993-08-26 1996-02-20 Paradigm Technology, Inc. Ram with pre-input register logic
JP2697634B2 (ja) * 1994-09-30 1998-01-14 日本電気株式会社 同期型半導体記憶装置
JP2697633B2 (ja) * 1994-09-30 1998-01-14 日本電気株式会社 同期型半導体記憶装置

Also Published As

Publication number Publication date
EP0766251A2 (en) 1997-04-02
EP0766251B1 (en) 2002-03-20
KR970017629A (ko) 1997-04-30
JP2907081B2 (ja) 1999-06-21
EP0766251A3 (en) 1999-09-15
US5748553A (en) 1998-05-05
JPH0991956A (ja) 1997-04-04
KR100222812B1 (ko) 1999-10-01
DE69619918T2 (de) 2002-09-19
DE69619918D1 (de) 2002-04-25

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Legal Events

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MK4A Expiration of patent term of an invention patent