TW307009B - - Google Patents
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- Publication number
- TW307009B TW307009B TW085101363A TW85101363A TW307009B TW 307009 B TW307009 B TW 307009B TW 085101363 A TW085101363 A TW 085101363A TW 85101363 A TW85101363 A TW 85101363A TW 307009 B TW307009 B TW 307009B
- Authority
- TW
- Taiwan
- Prior art keywords
- voltage
- bit line
- sense amplifier
- bit
- mos transistor
- Prior art date
Links
- 230000015654 memory Effects 0.000 claims description 113
- 238000009792 diffusion process Methods 0.000 claims description 21
- 230000000875 corresponding effect Effects 0.000 claims description 14
- 210000003625 skull Anatomy 0.000 claims description 8
- 230000002079 cooperative effect Effects 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 5
- 229910052751 metal Inorganic materials 0.000 claims description 5
- 239000004065 semiconductor Substances 0.000 claims 13
- 239000013078 crystal Substances 0.000 claims 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims 1
- 239000010931 gold Substances 0.000 claims 1
- 229910052737 gold Inorganic materials 0.000 claims 1
- 238000009434 installation Methods 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 30
- 238000012546 transfer Methods 0.000 description 18
- 101000878595 Arabidopsis thaliana Squalene synthase 1 Proteins 0.000 description 13
- 239000010408 film Substances 0.000 description 10
- 230000006698 induction Effects 0.000 description 10
- 230000003071 parasitic effect Effects 0.000 description 10
- 239000000463 material Substances 0.000 description 9
- 230000001939 inductive effect Effects 0.000 description 8
- 238000012795 verification Methods 0.000 description 8
- 238000006243 chemical reaction Methods 0.000 description 6
- 239000011295 pitch Substances 0.000 description 6
- 238000011161 development Methods 0.000 description 5
- 239000010409 thin film Substances 0.000 description 5
- 238000009826 distribution Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 230000003321 amplification Effects 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- 238000003199 nucleic acid amplification method Methods 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- YIWGJFPJRAEKMK-UHFFFAOYSA-N 1-(2H-benzotriazol-5-yl)-3-methyl-8-[2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carbonyl]-1,3,8-triazaspiro[4.5]decane-2,4-dione Chemical compound CN1C(=O)N(c2ccc3n[nH]nc3c2)C2(CCN(CC2)C(=O)c2cnc(NCc3cccc(OC(F)(F)F)c3)nc2)C1=O YIWGJFPJRAEKMK-UHFFFAOYSA-N 0.000 description 1
- 101710171221 30S ribosomal protein S11 Proteins 0.000 description 1
- 101710171220 30S ribosomal protein S12 Proteins 0.000 description 1
- XFXPMWWXUTWYJX-UHFFFAOYSA-N Cyanide Chemical compound N#[C-] XFXPMWWXUTWYJX-UHFFFAOYSA-N 0.000 description 1
- 101100386054 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) CYS3 gene Proteins 0.000 description 1
- 206010041349 Somnolence Diseases 0.000 description 1
- 101150101991 VLN1 gene Proteins 0.000 description 1
- 101150096564 VLN3 gene Proteins 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000008451 emotion Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000007274 generation of a signal involved in cell-cell signaling Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 235000015170 shellfish Nutrition 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 101150035983 str1 gene Proteins 0.000 description 1
- -1 switch VLP1 Proteins 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/26—Sensing or reading circuits; Data output circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/18—Bit line organisation; Bit line lay-out
Landscapes
- Read Only Memory (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22623095A JP3517489B2 (ja) | 1995-09-04 | 1995-09-04 | 不揮発性半導体記憶装置 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW307009B true TW307009B (enExample) | 1997-06-01 |
Family
ID=16841941
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW085101363A TW307009B (enExample) | 1995-09-04 | 1996-02-03 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US5694358A (enExample) |
| JP (1) | JP3517489B2 (enExample) |
| KR (1) | KR100490034B1 (enExample) |
| TW (1) | TW307009B (enExample) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001167591A (ja) * | 1999-12-08 | 2001-06-22 | Matsushita Electric Ind Co Ltd | 半導体記憶装置 |
| US6288938B1 (en) * | 1999-08-19 | 2001-09-11 | Azalea Microelectronics Corporation | Flash memory architecture and method of operation |
| EP1137011B1 (en) * | 2000-03-21 | 2008-12-10 | STMicroelectronics S.r.l. | String programmable nonvolatile memory with NOR architecture |
| EP1215680B1 (en) * | 2000-12-15 | 2008-03-19 | Halo Lsi Design and Device Technology Inc. | Fast program to program verify method |
| KR100567912B1 (ko) * | 2004-05-28 | 2006-04-05 | 주식회사 하이닉스반도체 | 플래시 메모리 장치의 페이지 버퍼 및 이를 이용한 데이터프로그램 방법 |
| CN101002278B (zh) | 2004-08-16 | 2011-11-16 | 富士通半导体股份有限公司 | 非易失性半导体存储器 |
| KR100823820B1 (ko) * | 2007-02-23 | 2008-04-22 | 후지쯔 가부시끼가이샤 | 불휘발성 반도체 메모리 |
| US7894230B2 (en) | 2009-02-24 | 2011-02-22 | Mosaid Technologies Incorporated | Stacked semiconductor devices including a master device |
| CN114155896B (zh) * | 2020-09-04 | 2024-03-29 | 长鑫存储技术有限公司 | 半导体装置 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL8802125A (nl) * | 1988-08-29 | 1990-03-16 | Philips Nv | Geintegreerde geheugenschakeling met parallelle en seriele in- en uitgang. |
| JP2900523B2 (ja) * | 1990-05-31 | 1999-06-02 | 日本電気株式会社 | 不揮発性半導体メモリ装置の書込回路 |
| JPH05159586A (ja) * | 1991-11-29 | 1993-06-25 | Mitsubishi Electric Corp | フラッシュｅｅｐｒｏｍ |
| KR940006073Y1 (ko) * | 1991-12-18 | 1994-09-08 | 금성일렉트론 주식회사 | 데이타 판독회로 |
| JP3207254B2 (ja) * | 1992-07-28 | 2001-09-10 | 沖電気工業株式会社 | 半導体不揮発性メモリ |
| JPH07153286A (ja) * | 1993-11-30 | 1995-06-16 | Sony Corp | 半導体不揮発性記憶装置 |
| JP3202498B2 (ja) * | 1994-03-15 | 2001-08-27 | 株式会社東芝 | 半導体記憶装置 |
-
1995
- 1995-09-04 JP JP22623095A patent/JP3517489B2/ja not_active Expired - Fee Related
-
1996
- 1996-02-03 TW TW085101363A patent/TW307009B/zh not_active IP Right Cessation
- 1996-09-03 KR KR1019960038007A patent/KR100490034B1/ko not_active Expired - Fee Related
- 1996-09-24 US US08/706,267 patent/US5694358A/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| US5694358A (en) | 1997-12-02 |
| JP3517489B2 (ja) | 2004-04-12 |
| KR970017678A (ko) | 1997-04-30 |
| JPH0973797A (ja) | 1997-03-18 |
| KR100490034B1 (ko) | 2005-10-05 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |