JP3517489B2 - 不揮発性半導体記憶装置 - Google Patents

不揮発性半導体記憶装置

Info

Publication number
JP3517489B2
JP3517489B2 JP22623095A JP22623095A JP3517489B2 JP 3517489 B2 JP3517489 B2 JP 3517489B2 JP 22623095 A JP22623095 A JP 22623095A JP 22623095 A JP22623095 A JP 22623095A JP 3517489 B2 JP3517489 B2 JP 3517489B2
Authority
JP
Japan
Prior art keywords
voltage
sense amplifier
bit line
latch
memory cell
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP22623095A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0973797A (ja
Inventor
尊之 河原
雄介 城野
俊一 佐伯
直樹 宮本
勝高 木村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP22623095A priority Critical patent/JP3517489B2/ja
Priority to TW085101363A priority patent/TW307009B/zh
Priority to KR1019960038007A priority patent/KR100490034B1/ko
Priority to US08/706,267 priority patent/US5694358A/en
Publication of JPH0973797A publication Critical patent/JPH0973797A/ja
Application granted granted Critical
Publication of JP3517489B2 publication Critical patent/JP3517489B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/18—Bit line organisation; Bit line lay-out

Landscapes

  • Read Only Memory (AREA)
  • Semiconductor Memories (AREA)
JP22623095A 1995-09-04 1995-09-04 不揮発性半導体記憶装置 Expired - Fee Related JP3517489B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP22623095A JP3517489B2 (ja) 1995-09-04 1995-09-04 不揮発性半導体記憶装置
TW085101363A TW307009B (enExample) 1995-09-04 1996-02-03
KR1019960038007A KR100490034B1 (ko) 1995-09-04 1996-09-03 불휘발성반도체기억장치
US08/706,267 US5694358A (en) 1995-09-04 1996-09-24 Nonvolatile semiconductor memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP22623095A JP3517489B2 (ja) 1995-09-04 1995-09-04 不揮発性半導体記憶装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2003175688A Division JP2003346491A (ja) 2003-06-20 2003-06-20 不揮発性半導体記憶装置

Publications (2)

Publication Number Publication Date
JPH0973797A JPH0973797A (ja) 1997-03-18
JP3517489B2 true JP3517489B2 (ja) 2004-04-12

Family

ID=16841941

Family Applications (1)

Application Number Title Priority Date Filing Date
JP22623095A Expired - Fee Related JP3517489B2 (ja) 1995-09-04 1995-09-04 不揮発性半導体記憶装置

Country Status (4)

Country Link
US (1) US5694358A (enExample)
JP (1) JP3517489B2 (enExample)
KR (1) KR100490034B1 (enExample)
TW (1) TW307009B (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001167591A (ja) * 1999-12-08 2001-06-22 Matsushita Electric Ind Co Ltd 半導体記憶装置
US6288938B1 (en) * 1999-08-19 2001-09-11 Azalea Microelectronics Corporation Flash memory architecture and method of operation
EP1137011B1 (en) * 2000-03-21 2008-12-10 STMicroelectronics S.r.l. String programmable nonvolatile memory with NOR architecture
EP1215680B1 (en) * 2000-12-15 2008-03-19 Halo Lsi Design and Device Technology Inc. Fast program to program verify method
KR100567912B1 (ko) * 2004-05-28 2006-04-05 주식회사 하이닉스반도체 플래시 메모리 장치의 페이지 버퍼 및 이를 이용한 데이터프로그램 방법
CN101002278B (zh) 2004-08-16 2011-11-16 富士通半导体股份有限公司 非易失性半导体存储器
KR100823820B1 (ko) * 2007-02-23 2008-04-22 후지쯔 가부시끼가이샤 불휘발성 반도체 메모리
US7894230B2 (en) 2009-02-24 2011-02-22 Mosaid Technologies Incorporated Stacked semiconductor devices including a master device
CN114155896B (zh) * 2020-09-04 2024-03-29 长鑫存储技术有限公司 半导体装置

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL8802125A (nl) * 1988-08-29 1990-03-16 Philips Nv Geintegreerde geheugenschakeling met parallelle en seriele in- en uitgang.
JP2900523B2 (ja) * 1990-05-31 1999-06-02 日本電気株式会社 不揮発性半導体メモリ装置の書込回路
JPH05159586A (ja) * 1991-11-29 1993-06-25 Mitsubishi Electric Corp フラッシュｅｅｐｒｏｍ
KR940006073Y1 (ko) * 1991-12-18 1994-09-08 금성일렉트론 주식회사 데이타 판독회로
JP3207254B2 (ja) * 1992-07-28 2001-09-10 沖電気工業株式会社 半導体不揮発性メモリ
JPH07153286A (ja) * 1993-11-30 1995-06-16 Sony Corp 半導体不揮発性記憶装置
JP3202498B2 (ja) * 1994-03-15 2001-08-27 株式会社東芝 半導体記憶装置

Also Published As

Publication number Publication date
US5694358A (en) 1997-12-02
TW307009B (enExample) 1997-06-01
KR970017678A (ko) 1997-04-30
JPH0973797A (ja) 1997-03-18
KR100490034B1 (ko) 2005-10-05

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