TW306047B - - Google Patents

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Publication number
TW306047B
TW306047B TW085108829A TW85108829A TW306047B TW 306047 B TW306047 B TW 306047B TW 085108829 A TW085108829 A TW 085108829A TW 85108829 A TW85108829 A TW 85108829A TW 306047 B TW306047 B TW 306047B
Authority
TW
Taiwan
Prior art keywords
layer
source
substrate
dopant
gate
Prior art date
Application number
TW085108829A
Other languages
English (en)
Chinese (zh)
Original Assignee
Intel Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Intel Corp filed Critical Intel Corp
Application granted granted Critical
Publication of TW306047B publication Critical patent/TW306047B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0223—Manufacture or treatment of FETs having insulated gates [IGFET] having source and drain regions or source and drain extensions self-aligned to sides of the gate
    • H10D30/0227—Manufacture or treatment of FETs having insulated gates [IGFET] having source and drain regions or source and drain extensions self-aligned to sides of the gate having both lightly-doped source and drain extensions and source and drain regions self-aligned to the sides of the gate, e.g. lightly-doped drain [LDD] MOSFET or double-diffused drain [DDD] MOSFET
    • H10P32/14—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
    • H01L21/2251—Diffusion into or out of group IV semiconductors
    • H01L21/2254—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides
    • H01L21/2257—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides the applied layer being silicon or silicide or SIPOS, e.g. polysilicon, porous silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/021—Manufacture or treatment using multiple gate spacer layers, e.g. bilayered sidewall spacers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H10D84/017—Manufacturing their source or drain regions, e.g. silicided source or drain regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H10P32/1414—
    • H10P32/17—
    • H10P32/171—

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Thin Film Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
TW085108829A 1995-07-03 1996-07-19 TW306047B (member.php)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/498,028 US5976939A (en) 1995-07-03 1995-07-03 Low damage doping technique for self-aligned source and drain regions

Publications (1)

Publication Number Publication Date
TW306047B true TW306047B (member.php) 1997-05-21

Family

ID=23979326

Family Applications (1)

Application Number Title Priority Date Filing Date
TW085108829A TW306047B (member.php) 1995-07-03 1996-07-19

Country Status (8)

Country Link
US (1) US5976939A (member.php)
EP (1) EP0838085A4 (member.php)
JP (1) JPH11509042A (member.php)
KR (1) KR100381769B1 (member.php)
AU (1) AU6406796A (member.php)
CA (1) CA2225926A1 (member.php)
TW (1) TW306047B (member.php)
WO (1) WO1997002594A1 (member.php)

Families Citing this family (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1997013273A1 (en) * 1995-10-04 1997-04-10 Intel Corporation Formation of source/drain from doped glass
JP3107157B2 (ja) * 1998-04-20 2000-11-06 日本電気株式会社 半導体装置およびその製造方法
US6232165B1 (en) * 1998-12-09 2001-05-15 Winbond Electronics Corporation Buried guard rings and method for forming the same
US6133131A (en) * 1999-04-19 2000-10-17 United Microelectronics Corp. Method of forming a gate spacer on a semiconductor wafer
US6329273B1 (en) * 1999-10-29 2001-12-11 Advanced Micro Devices, Inc. Solid-source doping for source/drain to eliminate implant damage
JP2001127271A (ja) * 1999-10-29 2001-05-11 Nec Corp 半導体製造装置の製造方法
US6265274B1 (en) * 1999-11-01 2001-07-24 United Microelectronics Corp. Method of a metal oxide semiconductor on a semiconductor wafer
KR20010066122A (ko) * 1999-12-31 2001-07-11 박종섭 반도체 소자의 폴리사이드 듀얼 게이트 형성 방법
US6703688B1 (en) 2001-03-02 2004-03-09 Amberwave Systems Corporation Relaxed silicon germanium platform for high speed CMOS electronics and high speed analog circuits
US6830976B2 (en) 2001-03-02 2004-12-14 Amberwave Systems Corproation Relaxed silicon germanium platform for high speed CMOS electronics and high speed analog circuits
US6506650B1 (en) * 2001-04-27 2003-01-14 Advanced Micro Devices, Inc. Method of fabrication based on solid-phase epitaxy for a MOSFET transistor with a controlled dopant profile
US6831292B2 (en) 2001-09-21 2004-12-14 Amberwave Systems Corporation Semiconductor structures employing strained material layers with defined impurity gradients and methods for fabricating same
WO2003028106A2 (en) * 2001-09-24 2003-04-03 Amberwave Systems Corporation Rf circuits including transistors having strained material layers
US6849528B2 (en) * 2001-12-12 2005-02-01 Texas Instruments Incorporated Fabrication of ultra shallow junctions from a solid source with fluorine implantation
US6730556B2 (en) * 2001-12-12 2004-05-04 Texas Instruments Incorporated Complementary transistors with controlled drain extension overlap
US6891266B2 (en) * 2002-02-14 2005-05-10 Mia-Com RF transition for an area array package
US6995430B2 (en) 2002-06-07 2006-02-07 Amberwave Systems Corporation Strained-semiconductor-on-insulator device structures
WO2003105206A1 (en) 2002-06-10 2003-12-18 Amberwave Systems Corporation Growing source and drain elements by selecive epitaxy
US6982474B2 (en) 2002-06-25 2006-01-03 Amberwave Systems Corporation Reacted conductive gate electrodes
US6686247B1 (en) * 2002-08-22 2004-02-03 Intel Corporation Self-aligned contacts to gates
US6911695B2 (en) * 2002-09-19 2005-06-28 Intel Corporation Transistor having insulating spacers on gate sidewalls to reduce overlap between the gate and doped extension regions of the source and drain
CN100383935C (zh) * 2002-11-22 2008-04-23 南亚科技股份有限公司 源极/漏极元件的制造方法
JP4585510B2 (ja) 2003-03-07 2010-11-24 台湾積體電路製造股▲ふん▼有限公司 シャロートレンチアイソレーションプロセス
US7122408B2 (en) 2003-06-16 2006-10-17 Micron Technology, Inc. Photodiode with ultra-shallow junction for high quantum efficiency CMOS image sensor and method of formation
KR100672679B1 (ko) * 2004-12-30 2007-01-22 동부일렉트로닉스 주식회사 시모스 이미지 센서의 광감지 소자 및 그의 제조방법
US7271044B2 (en) * 2005-07-21 2007-09-18 International Business Machines Corporation CMOS (complementary metal oxide semiconductor) technology
US7648871B2 (en) * 2005-10-21 2010-01-19 International Business Machines Corporation Field effect transistors (FETS) with inverted source/drain metallic contacts, and method of fabricating same
EP2072971A1 (en) 2007-12-17 2009-06-24 Services Pétroliers Schlumberger Variable throat venturi flow meter
US8796124B2 (en) 2011-10-25 2014-08-05 Taiwan Semiconductor Manufacturing Company, Ltd. Doping method in 3D semiconductor device
US8574995B2 (en) 2011-11-10 2013-11-05 Taiwan Semiconductor Manufacturing Company, Ltd. Source/drain doping method in 3D devices
US9455368B2 (en) * 2014-07-03 2016-09-27 Varian Semiconductor Equipment Associates, Inc. Method of forming an interdigitated back contact solar cell
CN109216273A (zh) 2017-07-06 2019-01-15 联华电子股份有限公司 半导体结构及其制造方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3095564B2 (ja) * 1992-05-29 2000-10-03 株式会社東芝 半導体装置及び半導体装置の製造方法
JPS5946107B2 (ja) * 1975-06-04 1984-11-10 株式会社日立製作所 Ｍｉｓ型半導体装置の製造法
JPS54147789A (en) * 1978-05-11 1979-11-19 Matsushita Electric Ind Co Ltd Semiconductor divice and its manufacture
JPS57141966A (en) * 1981-02-26 1982-09-02 Seiko Epson Corp Manufacture of semiconductor device
JPS61279129A (ja) * 1985-06-04 1986-12-09 Nec Corp 半導体装置の拡散領域形成方法
JPS63169047A (ja) * 1987-01-06 1988-07-13 Yamaguchi Nippon Denki Kk 半導体装置
JPS63302518A (ja) * 1987-06-02 1988-12-09 Fujitsu Ltd 半導体装置の製造方法
JPH01123417A (ja) * 1987-11-07 1989-05-16 Mitsubishi Electric Corp 半導体装置の製造方法
JPH01207932A (ja) * 1988-02-16 1989-08-21 Fuji Electric Co Ltd 半導体装置
US5079180A (en) * 1988-12-22 1992-01-07 Texas Instruments Incorporated Method of fabricating a raised source/drain transistor
DE4013929C2 (de) * 1989-05-02 1995-12-07 Toshiba Kawasaki Kk Verfahren zum Einbringen von Störstoffen in eine Halbleitermaterial-Schicht beim Herstellen eines Halbleiterbauelements und Anwendung des Verfahrens
US5234850A (en) * 1990-09-04 1993-08-10 Industrial Technology Research Institute Method of fabricating a nitride capped MOSFET for integrated circuits
US5518945A (en) * 1995-05-05 1996-05-21 International Business Machines Corporation Method of making a diffused lightly doped drain device with built in etch stop
US5504031A (en) * 1995-07-03 1996-04-02 Taiwan Semiconductor Manufacturing Company Ltd. Elevated source/drain with solid phase diffused source/drain extension for deep sub-micron mosfets

Also Published As

Publication number Publication date
JPH11509042A (ja) 1999-08-03
KR100381769B1 (ko) 2003-08-19
WO1997002594A1 (en) 1997-01-23
KR19990028704A (ko) 1999-04-15
EP0838085A1 (en) 1998-04-29
CA2225926A1 (en) 1997-01-23
EP0838085A4 (en) 1998-10-28
US5976939A (en) 1999-11-02
AU6406796A (en) 1997-02-05

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