TW303483B - - Google Patents
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- Publication number
- TW303483B TW303483B TW85100485A TW85100485A TW303483B TW 303483 B TW303483 B TW 303483B TW 85100485 A TW85100485 A TW 85100485A TW 85100485 A TW85100485 A TW 85100485A TW 303483 B TW303483 B TW 303483B
- Authority
- TW
- Taiwan
- Prior art keywords
- substrate
- bonded
- crystal
- manufacturing
- cut
- Prior art date
Links
- 239000000758 substrate Substances 0.000 claims description 54
- 239000013078 crystal Substances 0.000 claims description 27
- 238000004519 manufacturing process Methods 0.000 claims description 25
- 239000004065 semiconductor Substances 0.000 claims description 16
- 238000000034 method Methods 0.000 claims description 11
- 230000002079 cooperative effect Effects 0.000 claims description 3
- 235000012431 wafers Nutrition 0.000 description 18
- 238000000227 grinding Methods 0.000 description 12
- 238000010586 diagram Methods 0.000 description 5
- 238000005520 cutting process Methods 0.000 description 4
- 230000007547 defect Effects 0.000 description 4
- 230000002093 peripheral effect Effects 0.000 description 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 3
- 238000001035 drying Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 229960002050 hydrofluoric acid Drugs 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- -1 hydrogen ions Chemical class 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
Landscapes
- Mechanical Treatment Of Semiconductor (AREA)
- Recrystallisation Techniques (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP27417894A JPH08107193A (ja) | 1994-09-30 | 1994-09-30 | Ｓｏｉ基板の製造方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW303483B true TW303483B (enrdf_load_stackoverflow) | 1997-04-21 |
Family
ID=17538129
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW85100485A TW303483B (enrdf_load_stackoverflow) | 1994-09-30 | 1996-01-16 |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JPH08107193A (enrdf_load_stackoverflow) |
| TW (1) | TW303483B (enrdf_load_stackoverflow) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2869455B1 (fr) * | 2004-04-27 | 2006-07-14 | Soitec Silicon On Insulator | Procede de fabrication de puces et support associe |
| FR2935536B1 (fr) * | 2008-09-02 | 2010-09-24 | Soitec Silicon On Insulator | Procede de detourage progressif |
| JP5519256B2 (ja) | 2009-12-03 | 2014-06-11 | 株式会社荏原製作所 | 裏面が研削された基板を研磨する方法および装置 |
| CN110854011A (zh) * | 2019-09-30 | 2020-02-28 | 芯盟科技有限公司 | 堆叠键合晶圆的处理方法 |
| JP7339905B2 (ja) * | 2020-03-13 | 2023-09-06 | キオクシア株式会社 | 貼合装置および貼合方法 |
-
1994
- 1994-09-30 JP JP27417894A patent/JPH08107193A/ja active Pending
-
1996
- 1996-01-16 TW TW85100485A patent/TW303483B/zh active
Also Published As
| Publication number | Publication date |
|---|---|
| JPH08107193A (ja) | 1996-04-23 |
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