A7 A7 經濟部中央標準局員工消費合作社印裝 B7 五、發明説明（！） 〔產業上之利用領域〕 本發明係關於由將作爲支持基板之半導體晶圓，與作 爲活性基板之半導體晶圓貼合而成之貼合晶圓，來製造 SO I基板之SO I基板的製造方法# 〔先行技術〕 近年來對於高性能之半導體裝置用基板，由高耐壓性 或高速性等因索而選擇S 0 I基板，能滿足此種要求之大 面稹且結晶缺陷較少之S 0 I基板，若是由以2片半導體 晶圓貼合所成的貼合晶圆來作成的話，會變得比較簡單。 通常像這種貼合晶圚的製造，是以下列所示的工程來 進行（參考圖3 ) * (1 )對活性基板1 1作熱處理，當其表面形成氧化 膜1 3後，一方面對與支持基板1 2之接合面1 1 a施以 鏡面處理，一方面亦對支持基板1 2的接合面1 2 a施以 鏡面處理（圖3 (a))。 (2 )洗淨已各自施以鏡面處理之基板的接合面1 1 a，12a，作親水處理，當乾燥處理後，在尙保持親水 性的狀態下，令各自的接合面11a ，12a互相接合。 對此再度進行熱處理後，當活性基板1 1與支持基板1 2 互相貼著時，在支持基板1 2亦形成氣化膜1 3。由此可 得到貼合晶圖1 4 (圖3 ( b ))。 然而作親水處理及乾燥處理容易使殘留氫或氫離子， 聚集於此貼合晶圖1 4的外圍部，此成了形成氣泡發生未 本紙悵尺度適用中國國家標準（CNS ) Λ4規格（210X297公；t ) (請先閱讀背面之注意事項再填寫本頁)A7 A7 B7 Printed by the Employees ’Consumer Cooperative of the Central Bureau of Standards of the Ministry of Economy V. Description of the invention (!) [Industry application field] The present invention relates to the bonding of semiconductor wafers to be used as supporting substrates and semiconductor wafers to be active substrates Method for manufacturing SO I substrates by combining bonded wafers to manufacture SO I substrates # [Advance Technology] In recent years, high-performance semiconductor device substrates have been selected due to high voltage resistance, high speed, etc. S 0 I substrates, which can meet this requirement, have large surface grains and few crystal defects. If the S 0 I substrate is made of bonded wafers formed by bonding two semiconductor wafers, it will become more comparable. simple. Generally, the manufacturing of this kind of bonded crystal is carried out by the following procedures (refer to Figure 3) * (1) heat treatment of the active substrate 11, when the oxide film 13 is formed on the surface, on the one hand The bonding surface 1 1 a of the support substrate 12 is subjected to mirror treatment, and on the one hand, the bonding surface 12 a of the support substrate 12 is also subjected to mirror treatment (FIG. 3 (a)). (2) Wash the bonding surfaces 1 1 a, 12a of the substrates that have been individually mirror-treated, and perform hydrophilic treatment. After drying, keep the bonding surfaces 11a, 12a bonded to each other while maintaining hydrophilicity. . After this heat treatment is performed again, when the active substrate 11 and the support substrate 1 2 are attached to each other, a vaporized film 13 is also formed on the support substrate 12. Thus, the bonded crystal pattern 14 (Figure 3 (b)) can be obtained. However, the hydrophilic treatment and drying treatment can easily cause residual hydrogen or hydrogen ions to accumulate on the periphery of this bonded crystal 14 and this becomes the formation of air bubbles. The scale of the original paper is not applicable. The Chinese National Standard (CNS) Λ4 specification (210X297 ; T) (Please read the notes on the back before filling this page)
*1T f B7 五、發明説明（2 ) 接著部（void )的原因。由於此未接著部較其它部位的 強度爲弱，會成了在往後的裝置工程中發生碎屑（chipping ) 或微粒 （ particles ) 的原因 * 因此包含未接著 部之活性基板11的外圍部有除去的必要。 以往除去此活性基板1 1的外圔部之方法，是以下列 使所貼合的晶園14的徑縮小之方法來進行。 即如圖4 ( a )所示般，對活性基板1 1的上面作平 面研削至所定的厚度爲止後，當對貼合晶園1 4作水平方 向回轉時，亦同時令變形輪1 5作水平方向回轉·令貼合 晶圓1 4的外圍部與此變形輪1 5的上剖研削面 1 5 a抵合，僅研削距水平方向約1英吋程度的宽度使徑 縮小。 接下來如圖4(b) 、 （c)所示般’使徑已欒小之 貼合晶園1 4的周緣部與變形輪1 5的下部研削面1 5 b 抵合，對此周緣部作平滑面處理。 經濟部中央橾準局貝工消費合作社印裝 (請先聞讀背面之注意事項再填寫本頁) 最後在殘留中間氧化膜5 a的狀態下’以氟酸溶液作 蝕刻除去氧化膜1 3，對活性基板1 1的上面加以研磨使 其更薄而得到SOI基板（圖上未曾標示）。 〔發明所欲解決之課題〕 然而在這種對貼合晶圚的外園部由水平方向開始研削 ，使貼合晶圓的徑縮小之方法上’研削的寬度約爲1英吋 程度之大，水平方向的研削壓力會有長時間施加在貼合晶 園上而發生加工應變，由此發生了 &裂等結晶缺陷（Pi1: 本紙張尺度遑用中國國家橾隼（〇奶）八4規格（210'/ 297公釐）_5_ 3〇3483 A7 B7 五、發明説明（3 ) )之問題點。 且研削的宽度約有1英时程度之大，由水平方向開始 研削的時間過長，而有生產效率太差之問題點》 本發明鑑於上列之問題，其目的在於提供一 S 0 I基 板的製造方法*除不會對貼合之晶圜造成研削壓力防止結 晶缺陷（pit )的發生外，並且能較傅統技術的製造方 法有更好的生產效率· 〔用以解決問題之手段〕 因此在本發明中，關於將爲支持基板之半導《晶圓， 與爲活性基板之半導體晶圖貼合之S 0 I基板的製造，在 除去貼合之半導髏晶圚的外困部的方法上，以對貼合之半 導髏晶圓呈略垂直方向回轉之切片，切斷上述半導體晶圓 的外園部。 〔實施例〕 以下，基於本發明的實施例圓面來加以說明。 第1圖係有關本發明之S 0 I基板的製造方法所示之 模式圖，第2圖係有關本發明之S Ο I基板的製造方法的 製造工程所示之圖，第3圚係貼合晶圚的製造工程的—例 所示之圖，第4圚係以往技術之SO I基板的製造方法所 示之圖。 本實施例之S 0 I基板的製造方法，至得到貼合晶_ 4爲止•與上述以往的技術相同。 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） f------1τ------M I (請先閱讀背面之注意事項再填寫本頁) 經濟部中央棣準局貝工消費合作社印焚 A7 B7 五、發明説明（4 ) 即如圖2 ( a )所示般，對支持基板2作熱處理，俟 其表面成長氧化膜5後，經過親水處理及乾燥處理，在其 上接合活性基板3。 如圓2 ( b )所示般，當對所接合之支持基板2與活 性基板3作熱處理使兩者更加貼著時•亦讓全體成長氧化 膜5而得到貼合晶圓4。 如圖2 ( c )所示般，以研削機對貼合晶圚4的活性 基板3的上面作平面研削。 接下來對有關本資施例的外困部的除去方法加以說明 〇 如圖1 (a)所示般，令已平面研削之貼合晶晒4作 水平方向回轉•接下來令設在旋轉機器上之園盤狀的切片 1對活性基板3呈略垂直方向回轉，由上方朝箭頭A的方 向下降。 如圖1 (b)所示般，隨著切片1的下降，活性基板 經濟部中央標準局員工消費合作社印製 (請先閲讀背面之注意事項再填寫本頁) 3與支持基板2，在外圔部會沿著同一面作略垂直地切斷 ，當切片1切斷支持基板2的底面的氧化膜5時，包含未 接著部在內之外圔部會呈環狀由貼合晶圓4被切離，結束 切斷* 再來，回到圈2的工程圓，以下列的工程製造SO I 基板。 如圖2 ( d )所示般，由貼合晶圖4取下環狀的外園 部。 如圚2 ( e )所示般，對已取下外圔部之貼合晶圚4 本紙張尺度適用中國國家樣準（CNS ) A4規格（210X 297公釐） A7 B7 五、發明説明（5 ) 施以平滑面處理加工。 最後，對殘留於此貼合晶圖4的底面之氧化膜5，以 氟酸溶液之蝕刻作去除，對活性基板3的上面使其更薄加 以硏磨，得到S 0 I基板（圔上未標示）。 而在上述實施例中，雖是當對活性基板3完成平面研 削後，再對貼合晶圓4作切斷，但除此而外，亦可在對活 性基板完成平面硏削前切断貼合晶圓，而後再對活性基板 作平面研削。 〔發明之效果〕 由於本發明爲以上之構成，因此在切除貼合晶園的外 園部的未接著部時，不會對貼合晶圖造成研削壓力，而具 有可防止結晶缺陷（pit )的發生之良好效果。 且垂直方向的切斷較水平方向的硏削，更可在短時間 內切除外圔部，而具有生產效率良好之優異效果· 〔圖面之簡單說明〕 經濟部中央標準局貝工消費合作社印製 (請先閲讀背面之注意事項再填寫本頁) 第1圖係關於SO I基板的製造方法所示之楔式圖。 第2圇係關於S Ο I基板的製造方法之製造工程所示 之圓。 第3園係貼合晶圓的製造工程的一例所示之圖。 第4圖係傅統技術的SO I基板的製造方法所示之圖 9 〔圓號說明〕 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） 〇 A7 B7 五、發明説明（6 ) 1 :切片 2 :支持基板 3 :活性基板 4 ·貼合晶圓 5 :氧化膜 5 a :中間氧化膜 1 1 :活性基板 1 2 :支持基板 1 3 :氧化膜 1 3 a :中間氧化膜 1 4 :貼合晶圚 1 5 :變形輪 1 5 a :上部研削面 1 5 b :下部研削面 -—--I I ! I - - -- 1- - - - - - - —-I- - - ........ — - «! 一SJ (請先閱讀背面之注意事項再填寫本頁) 經濟部中央橾準局員工消費合作社印製 本紙張尺度適用中國國家標準（CNS ) A4规格（210X：297公釐）* 1T f B7 V. Description of the invention (2) The reason for the next part (void). Since the strength of this non-bonded part is weaker than other parts, it may become the cause of chipping or particles in the subsequent device engineering * Therefore, the peripheral part of the active substrate 11 including the non-bonded part has The need to remove. Conventionally, the method of removing the outer portion of the active substrate 11 is performed by the following method of reducing the diameter of the crystal garden 14 to be bonded. That is, as shown in FIG. 4 (a), after the upper surface of the active substrate 11 is ground to a predetermined thickness, when the bonded crystal garden 14 is horizontally rotated, the deformation wheel 15 is also made Rotate in the horizontal direction · Make the peripheral portion of the bonded wafer 14 conform to the upper cutting surface 15 a of the deforming wheel 15, and only grind the width by about 1 inch from the horizontal direction to reduce the diameter. Next, as shown in FIGS. 4 (b) and (c), the peripheral part of the diameter of the small crystal that has been attached to the crystal garden 14 is brought into contact with the lower grinding surface 15b of the deforming wheel 15 and this peripheral part Smooth the surface. Printed by the Beigong Consumer Cooperative of the Central Bureau of Economic Affairs of the Ministry of Economic Affairs (please read the precautions on the back and fill in this page). Finally, leave the intermediate oxide film 5 a 'and remove the oxide film with a fluoric acid solution as an etching 1 The upper surface of the active substrate 11 is polished to make it thinner to obtain an SOI substrate (not shown in the figure). [Problem to be solved by the invention] However, in this method of grinding the outer circle of the bonded wafer from the horizontal direction, the diameter of the bonded wafer is reduced. The width of the grinding is about 1 inch. The horizontal grinding pressure will be applied to the bonded crystal garden for a long time and the processing strain will occur, resulting in crystal defects such as & crack (Pi1: This paper scale uses the Chinese National Falcon (〇 奶) 84 specifications (210 '/ 297 mm) _5_ 3〇3483 A7 B7 V. Invention description (3)) The problem. And the width of the grinding is about 1 inch, the time to start grinding from the horizontal direction is too long, and there is a problem that the production efficiency is too poor. The present invention is based on the above problems, and its purpose is to provide a S 0 I substrate The manufacturing method of * does not cause grinding pressure on the bonded crystal to prevent the occurrence of crystalline defects (pit), and can have better production efficiency than the manufacturing method of Futong Technology. [Method for solving problems] Therefore, in the present invention, regarding the manufacturing of the S 0 I substrate bonded to the semiconductor wafer of the support substrate and the semiconductor crystal pattern of the active substrate, the outer trapped portion of the bonded semiconductor crystal is removed In the method, the outer round part of the semiconductor wafer is cut by slicing the semi-conductor wafer in a slightly vertical direction. [Examples] Hereinafter, a description will be given based on a round surface of an example of the present invention. Fig. 1 is a schematic diagram showing the manufacturing method of the S 0 I substrate of the present invention, Fig. 2 is a diagram showing the manufacturing process of the manufacturing method of the S O I substrate of the present invention, and the third is the lamination An example of the manufacturing process of Jingji is shown in the example, and the fourth is a diagram shown in the prior art method of manufacturing an SO I substrate. The manufacturing method of the S 0 I substrate of this embodiment is the same as the above-mentioned conventional technique until the bonded crystal_4 is obtained. This paper scale is applicable to the Chinese National Standard (CNS) A4 specification (210X297mm) f ------ 1τ ------ MI (please read the precautions on the back before filling this page) Central Ministry of Economic Affairs Printing and Burning A7 B7 by the Bureau Cooperative Consumer Co., Ltd. 5. Description of the invention (4) That is, as shown in FIG. 2 (a), the support substrate 2 is heat-treated, and after the oxide film 5 is grown on its surface, it is subjected to hydrophilic treatment and drying treatment The active substrate 3 is bonded thereon. As shown in circle 2 (b), when the support substrate 2 and the active substrate 3 are heat-treated to make them more closely adhered, the entirety of the oxide film 5 is also grown to obtain a bonded wafer 4. As shown in Fig. 2 (c), the upper surface of the active substrate 3 to which the crystal 4 is bonded is planarly ground with a grinding machine. Next, the method for removing the outer trapped part of this embodiment will be described. As shown in FIG. 1 (a), the flat-bonded crystal 4 is horizontally rotated. Next, it is set on a rotating machine The upper disc-shaped slice 1 rotates in a slightly vertical direction to the active substrate 3, and descends in the direction of arrow A from above. As shown in Figure 1 (b), as the slice 1 declines, it is printed by the Employee Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs (please read the precautions on the back before filling out this page) 3 and the support substrate 2, outside. The part will be cut slightly vertically along the same surface. When the slice 1 cuts the oxide film 5 on the bottom surface of the support substrate 2, the swollen part including the non-adhered part will be ring-shaped by the bonded wafer Cut off, finish cutting * Come again, return to the engineering circle of circle 2, and manufacture the SO I substrate with the following engineering. As shown in Fig. 2 (d), the ring-shaped outer circular portion is removed from the bonded crystal. As shown in Fig. 2 (e), for the bonded wafers with the outer part removed, the paper size is applicable to the Chinese National Standards (CNS) A4 specification (210X 297 mm) A7 B7 V. Invention description (5 ) Apply smooth surface treatment. Finally, the oxide film 5 remaining on the bottom surface of the bonded crystal pattern 4 is removed by etching with a hydrofluoric acid solution, and the upper surface of the active substrate 3 is made thinner and polished to obtain an S 0 I substrate Marked). In the above embodiment, although the active substrate 3 is planarly ground, and then the bonded wafer 4 is cut, in addition to this, the bonding may also be cut before the active substrate is planarly ground. Wafer, and then plane grinding the active substrate. [Effects of the Invention] Since the present invention has the above structure, when the unattached portion of the outer round portion of the bonded crystal garden is cut, there is no grinding pressure on the bonded crystal pattern, and it has the ability to prevent crystal defects (pit) Good effect that happened. And the vertical cutting can cut off the outer slash in a shorter time than the horizontal cutting, and it has the excellent effect of good production efficiency. [Simple description of the picture] Printed by Beigong Consumer Cooperatives, Central Bureau of Standards, Ministry of Economic Affairs (Please read the precautions on the back before filling in this page) Figure 1 is a wedge diagram showing the manufacturing method of the SO I substrate. The second wall is the circle shown in the manufacturing process regarding the manufacturing method of the S Ο I substrate. The third garden is a diagram showing an example of a manufacturing process of bonded wafers. Figure 4 shows the manufacturing method of SOI substrate of Futong Technology. Figure 9 [Description of French Horn] This paper scale is applicable to the Chinese National Standard (CNS) A4 specification (210X297mm). 〇A7 B7 5. Invention description (6) 1: Slice 2: Support substrate 3: Active substrate 4 • Wafer bonding 5: Oxide film 5 a: Intermediate oxide film 1 1: Active substrate 1 2: Support substrate 1 3: Oxide film 1 3 a: Intermediate oxide film 1 4: Laminated crystal 1 5: Deformation wheel 1 5 a: Upper grinding surface 1 5 b: Lower grinding surface ----- II! I---1--------I--- ........ —-«! One SJ (please read the precautions on the back before filling in this page). The paper printed by the Ministry of Economic Affairs, Central Bureau of Practitioners and Employee Consumer Cooperatives shall be compliant with China National Standard (CNS) A4 (210X: 297mm)