TW298666B - - Google Patents

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Publication number
TW298666B
TW298666B TW083103805A TW83103805A TW298666B TW 298666 B TW298666 B TW 298666B TW 083103805 A TW083103805 A TW 083103805A TW 83103805 A TW83103805 A TW 83103805A TW 298666 B TW298666 B TW 298666B
Authority
TW
Taiwan
Prior art keywords
layer
patterned
metal
oxide
etching
Prior art date
Application number
TW083103805A
Other languages
English (en)
Chinese (zh)
Original Assignee
At & T Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by At & T Corp filed Critical At & T Corp
Application granted granted Critical
Publication of TW298666B publication Critical patent/TW298666B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H10D84/0172—Manufacturing their gate conductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/013—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator
    • H10D64/01302—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H10D64/01304—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
    • H10D64/01326—Aspects related to lithography, isolation or planarisation of the conductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS
    • H10D84/853—Complementary IGFETs, e.g. CMOS comprising FinFETs
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/105—Masks, metal

Landscapes

  • Drying Of Semiconductors (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
TW083103805A 1994-01-03 1994-04-27 TW298666B (cg-RX-API-DMAC10.html)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/176,600 US5438006A (en) 1994-01-03 1994-01-03 Method of fabricating gate stack having a reduced height

Publications (1)

Publication Number Publication Date
TW298666B true TW298666B (cg-RX-API-DMAC10.html) 1997-02-21

Family

ID=22645037

Family Applications (1)

Application Number Title Priority Date Filing Date
TW083103805A TW298666B (cg-RX-API-DMAC10.html) 1994-01-03 1994-04-27

Country Status (5)

Country Link
US (1) US5438006A (cg-RX-API-DMAC10.html)
EP (1) EP0665579A1 (cg-RX-API-DMAC10.html)
JP (1) JP3177572B2 (cg-RX-API-DMAC10.html)
KR (1) KR100190261B1 (cg-RX-API-DMAC10.html)
TW (1) TW298666B (cg-RX-API-DMAC10.html)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR0135166B1 (ko) * 1993-07-20 1998-04-25 문정환 반도체장치의 게이트 형성방법
JP2638573B2 (ja) * 1995-06-26 1997-08-06 日本電気株式会社 半導体装置の製造方法
DE19535618A1 (de) * 1995-09-25 1997-03-27 Siemens Ag Verfahren zur Herstellung von mikroelektronischen Strukturen
US5886410A (en) * 1996-06-26 1999-03-23 Intel Corporation Interconnect structure with hard mask and low dielectric constant materials
US6613673B2 (en) * 1996-07-16 2003-09-02 Micron Technology, Inc. Technique for elimination of pitting on silicon substrate during gate stack etch
US7078342B1 (en) 1996-07-16 2006-07-18 Micron Technology, Inc. Method of forming a gate stack
US7041548B1 (en) * 1996-07-16 2006-05-09 Micron Technology, Inc. Methods of forming a gate stack that is void of silicon clusters within a metallic silicide film thereof
US6087254A (en) * 1996-07-16 2000-07-11 Micron Technology, Inc. Technique for elimination of pitting on silicon substrate during gate stack etch
US5851926A (en) * 1996-10-01 1998-12-22 Applied Materials, Inc Method for etching transistor gates using a hardmask
US6369423B2 (en) 1998-03-03 2002-04-09 Kabushiki Kaisha Toshiba Semiconductor device with a thin gate stack having a plurality of insulating layers
US6399432B1 (en) 1998-11-24 2002-06-04 Philips Semiconductors Inc. Process to control poly silicon profiles in a dual doped poly silicon process
US6096653A (en) * 1998-12-07 2000-08-01 Worldwide Semiconductor Manufacturing Corporation Method for fabricating conducting lines with a high topography height
US6630405B1 (en) 1999-12-20 2003-10-07 Chartered Semiconductor Manufacturing Ltd. Method of gate patterning for sub-0.1 μm technology
TW552669B (en) * 2000-06-19 2003-09-11 Infineon Technologies Corp Process for etching polysilicon gate stacks with raised shallow trench isolation structures
DE10147791A1 (de) * 2001-09-27 2003-04-10 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines Halbleiterbauelements auf der Basis eines Nitrid-Verbindungshalbleiters
SE0201566D0 (sv) * 2002-05-27 2002-05-27 Karlshamns Ab New composition
JP2006186276A (ja) 2004-12-28 2006-07-13 Toshiba Corp 半導体装置の製造方法
KR20070047624A (ko) * 2005-11-02 2007-05-07 주성엔지니어링(주) 박막 패턴 형성 방법
US8809179B2 (en) * 2006-04-13 2014-08-19 Taiwan Semiconductor Manufacturing Company, Ltd. Method for reducing topography of non-volatile memory and resulting memory cells
EP2802004B1 (en) 2013-05-08 2020-11-04 ams AG Method of structuring a device layer of a recessed semiconductor device and recessed semiconductor device comprising a structured device layer

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4818715A (en) * 1987-07-09 1989-04-04 Industrial Technology Research Institute Method of fabricating a LDDFET with self-aligned silicide
JPH01189170A (ja) * 1988-01-25 1989-07-28 Seiko Epson Corp 半導体装置の製造方法
NL8800222A (nl) * 1988-01-29 1989-08-16 Philips Nv Werkwijze voor het vervaardigen van een halfgeleiderinrichting waarbij op zelfregistrerende wijze metaalsilicide wordt aangebracht.
EP0704883A3 (en) * 1988-02-11 1997-07-09 Sgs Thomson Microelectronics Melting metal silicide encapsulation to protect multilayered polyicides
US4971655A (en) * 1989-12-26 1990-11-20 Micron Technology, Inc. Protection of a refractory metal silicide during high-temperature processing using a dual-layer cap of silicon dioxide and silicon nitride
US5034348A (en) * 1990-08-16 1991-07-23 International Business Machines Corp. Process for forming refractory metal silicide layers of different thicknesses in an integrated circuit
US5094712A (en) * 1990-10-09 1992-03-10 Micron Technology, Inc. One chamber in-situ etch process for oxide and conductive material
JP2901423B2 (ja) * 1992-08-04 1999-06-07 三菱電機株式会社 電界効果トランジスタの製造方法
US5346586A (en) * 1992-12-23 1994-09-13 Micron Semiconductor, Inc. Method for selectively etching polysilicon to gate oxide using an insitu ozone photoresist strip

Also Published As

Publication number Publication date
KR950024337A (ko) 1995-08-21
JPH07221193A (ja) 1995-08-18
US5438006A (en) 1995-08-01
KR100190261B1 (ko) 1999-06-01
EP0665579A1 (en) 1995-08-02
JP3177572B2 (ja) 2001-06-18

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Legal Events

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