TW294831B - - Google Patents

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Publication number
TW294831B
TW294831B TW085104858A TW85104858A TW294831B TW 294831 B TW294831 B TW 294831B TW 085104858 A TW085104858 A TW 085104858A TW 85104858 A TW85104858 A TW 85104858A TW 294831 B TW294831 B TW 294831B
Authority
TW
Taiwan
Prior art keywords
etching
film
aluminum
aqueous solution
circuit
Prior art date
Application number
TW085104858A
Other languages
English (en)
Chinese (zh)
Original Assignee
Handotai Energy Kenkyusho Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP12591095A external-priority patent/JPH08295881A/ja
Priority claimed from JP12892395A external-priority patent/JPH08302343A/ja
Application filed by Handotai Energy Kenkyusho Kk filed Critical Handotai Energy Kenkyusho Kk
Application granted granted Critical
Publication of TW294831B publication Critical patent/TW294831B/zh

Links

Classifications

    • H10P50/283—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/08—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a fluorine compound

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Inorganic Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Thin Film Transistor (AREA)
TW085104858A 1995-04-26 1996-04-23 TW294831B (OSRAM)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP12591095A JPH08295881A (ja) 1995-04-26 1995-04-26 エッチング材料およびエッチング方法
JP12892395A JPH08302343A (ja) 1995-04-28 1995-04-28 エッチング材料およびエッチング方法

Publications (1)

Publication Number Publication Date
TW294831B true TW294831B (OSRAM) 1997-01-01

Family

ID=26462210

Family Applications (1)

Application Number Title Priority Date Filing Date
TW085104858A TW294831B (OSRAM) 1995-04-26 1996-04-23

Country Status (3)

Country Link
US (1) US5976988A (OSRAM)
KR (1) KR100305415B1 (OSRAM)
TW (1) TW294831B (OSRAM)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI255957B (en) * 1999-03-26 2006-06-01 Hitachi Ltd Liquid crystal display device and method of manufacturing the same
JP3491571B2 (ja) * 1999-07-13 2004-01-26 日本電気株式会社 半導体薄膜の形成方法
US6506678B1 (en) * 2000-05-19 2003-01-14 Lsi Logic Corporation Integrated circuit structures having low k porous aluminum oxide dielectric material separating aluminum lines, and method of making same
JP4590700B2 (ja) * 2000-07-14 2010-12-01 ソニー株式会社 基板洗浄方法及び基板洗浄装置
US6799589B2 (en) * 2000-11-08 2004-10-05 Sony Corporation Method and apparatus for wet-cleaning substrate
US6638365B2 (en) 2001-10-09 2003-10-28 Chartered Semiconductor Manufacturing Ltd. Method for obtaining clean silicon surfaces for semiconductor manufacturing
KR100415617B1 (ko) * 2001-12-06 2004-01-24 엘지.필립스 엘시디 주식회사 에천트와 이를 이용한 금속배선 제조방법 및박막트랜지스터의 제조방법
JP2003253482A (ja) * 2002-03-01 2003-09-10 Ngk Insulators Ltd チタン系膜及びチタン酸化物の除去方法
US6972265B1 (en) * 2002-04-15 2005-12-06 Silicon Magnetic Systems Metal etch process selective to metallic insulating materials
US8003513B2 (en) * 2002-09-27 2011-08-23 Medtronic Minimed, Inc. Multilayer circuit devices and manufacturing methods using electroplated sacrificial structures
US20040061232A1 (en) * 2002-09-27 2004-04-01 Medtronic Minimed, Inc. Multilayer substrate
JP4093147B2 (ja) * 2003-09-04 2008-06-04 三菱電機株式会社 エッチング液及びエッチング方法
US7030034B2 (en) * 2003-09-18 2006-04-18 Micron Technology, Inc. Methods of etching silicon nitride substantially selectively relative to an oxide of aluminum
GB0418633D0 (en) * 2004-08-20 2004-09-22 3M Innovative Properties Co Method of making abrasive article
CA2618915C (en) 2005-08-19 2014-09-23 Houghton Metal Finishing Company Methods and compositions for acid treatment of a metal surface
JP2009010107A (ja) * 2007-06-27 2009-01-15 Oki Electric Ind Co Ltd 半導体装置及びその製造方法
JP5642967B2 (ja) * 2007-11-22 2014-12-17 関東化学株式会社 エッチング液組成物
KR101030057B1 (ko) 2008-07-16 2011-04-22 (주) 이피웍스 실리콘 폐기물의 재생방법 및 그 방법으로 재생된 실리콘조성물
TWI654764B (zh) 2010-11-11 2019-03-21 日商半導體能源研究所股份有限公司 半導體裝置及其製造方法
SG187274A1 (en) 2011-07-14 2013-02-28 3M Innovative Properties Co Etching method and devices produced using the etching method
US9252053B2 (en) 2014-01-16 2016-02-02 International Business Machines Corporation Self-aligned contact structure
WO2016044595A1 (en) * 2014-09-17 2016-03-24 Massachusetts Institute Of Technology Aluminum based electroactive materials
US11961735B2 (en) 2021-06-04 2024-04-16 Tokyo Electron Limited Cyclic plasma processing
KR102603439B1 (ko) * 2022-03-07 2023-11-20 제엠제코(주) 음각기판을 구비한 반도체 패키지 및 이의 제조방법

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1348811A (en) * 1970-11-27 1974-03-27 Siemens Ag Production of schottky contacts
FR2288392A1 (fr) * 1974-10-18 1976-05-14 Radiotechnique Compelec Procede de realisation de dispositifs semiconducteurs
JPS5816534A (ja) * 1981-07-23 1983-01-31 Nec Corp 半導体装置の製造方法
JPS6039176A (ja) * 1983-08-10 1985-02-28 Daikin Ind Ltd エッチング剤組成物
US4517106A (en) * 1984-04-26 1985-05-14 Allied Corporation Soluble surfactant additives for ammonium fluoride/hydrofluoric acid oxide etchant solutions
US4761244A (en) * 1987-01-27 1988-08-02 Olin Corporation Etching solutions containing ammonium fluoride and an alkyl polyaccharide surfactant
US5277835A (en) * 1989-06-26 1994-01-11 Hashimoto Chemical Industries Co., Ltd. Surface treatment agent for fine surface treatment
JPH0353084A (ja) * 1989-07-18 1991-03-07 Citizen Watch Co Ltd タンタル用エッチング液

Also Published As

Publication number Publication date
US5976988A (en) 1999-11-02
KR100305415B1 (ko) 2001-11-22

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees