TW288167B - - Google Patents

Info

Publication number
TW288167B
TW288167B TW084100103A TW84100103A TW288167B TW 288167 B TW288167 B TW 288167B TW 084100103 A TW084100103 A TW 084100103A TW 84100103 A TW84100103 A TW 84100103A TW 288167 B TW288167 B TW 288167B
Authority
TW
Taiwan
Application number
TW084100103A
Other languages
Chinese (zh)
Original Assignee
Memc Electronic Materials
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Memc Electronic Materials filed Critical Memc Electronic Materials
Application granted granted Critical
Publication of TW288167B publication Critical patent/TW288167B/zh

Links

Classifications

    • H10P50/00—
    • H10P90/126—
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B44—DECORATIVE ARTS
    • B44C—PRODUCING DECORATIVE EFFECTS; MOSAICS; TARSIA WORK; PAPERHANGING
    • B44C1/00—Processes, not specifically provided for elsewhere, for producing decorative surface effects
    • B44C1/22—Removing surface-material, e.g. by engraving, by etching
    • H10P50/642—
    • H10P72/0426—
TW084100103A 1993-10-08 1995-01-05 TW288167B (oth)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/133,980 US5340437A (en) 1993-10-08 1993-10-08 Process and apparatus for etching semiconductor wafers

Publications (1)

Publication Number Publication Date
TW288167B true TW288167B (oth) 1996-10-11

Family

ID=22461214

Family Applications (1)

Application Number Title Priority Date Filing Date
TW084100103A TW288167B (oth) 1993-10-08 1995-01-05

Country Status (10)

Country Link
US (1) US5340437A (oth)
EP (1) EP0673545B1 (oth)
JP (1) JP3081246B2 (oth)
KR (1) KR0161794B1 (oth)
CN (1) CN1043278C (oth)
DE (1) DE69415298T2 (oth)
MY (1) MY112147A (oth)
SG (1) SG46423A1 (oth)
TW (1) TW288167B (oth)
WO (1) WO1995010850A1 (oth)

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DE19721493A1 (de) * 1997-05-22 1998-11-26 Wacker Siltronic Halbleitermat Verfahren zum Ätzen von Halbleiterscheiben
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US6376395B2 (en) 2000-01-11 2002-04-23 Memc Electronic Materials, Inc. Semiconductor wafer manufacturing process
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DE10031603C2 (de) * 2000-06-29 2002-06-13 Wacker Siltronic Halbleitermat Verfahren zur Herstellung mindestens einer Halbleiterscheibe durch Ätzen
EP1313135A1 (en) * 2000-06-29 2003-05-21 Shin-Etsu Handotai Co., Ltd Method for processing semiconductor wafer and semiconductor wafer
DE10064081C2 (de) * 2000-12-21 2002-06-06 Wacker Siltronic Halbleitermat Verfahren zur Herstellung einer Halbleiterscheibe
JP2002256460A (ja) * 2001-02-09 2002-09-11 Nippon Parkerizing Co Ltd アルミニウムおよびアルミニウム合金に用いるエッチングとデスマッティング用の組成物及びその方法
JP2005534188A (ja) * 2002-07-26 2005-11-10 アプライド　マテリアルズ　インコーポレイテッド スピンドライヤーの為の親水性構成要素
JP4509501B2 (ja) * 2003-07-31 2010-07-21 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 円板状部材のエッチング方法及び装置
US7415985B2 (en) * 2003-09-24 2008-08-26 Dainippon Screen Mfg. Co., Ltd. Substrate cleaning and drying apparatus
US6977215B2 (en) * 2003-10-28 2005-12-20 Nec Electronics America, Inc. Tungsten plug corrosion prevention method using gas sparged water
JP2005175106A (ja) * 2003-12-10 2005-06-30 Sumitomo Mitsubishi Silicon Corp シリコンウェーハの加工方法
JP2005327856A (ja) * 2004-05-13 2005-11-24 Komatsu Electronic Metals Co Ltd 半導体ウェーハのエッチング装置
JP4482653B2 (ja) 2004-05-19 2010-06-16 独立行政法人産業技術総合研究所 接触分解ガソリンの水素化処理触媒
KR100644054B1 (ko) * 2004-12-29 2006-11-10 동부일렉트로닉스 주식회사 세정 장치 및 게이트 산화막의 전세정 방법
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JP4869957B2 (ja) 2006-03-22 2012-02-08 大日本スクリーン製造株式会社 基板処理装置
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JP5478604B2 (ja) * 2008-03-31 2014-04-23 エムイーエムシー・エレクトロニック・マテリアルズ・インコーポレイテッド シリコンウェハの端部をエッチングするための方法
KR20110099108A (ko) * 2008-11-19 2011-09-06 엠이엠씨 일렉트로닉 머티리얼즈, 인크. 반도체 웨이퍼의 에지를 스트리핑하기 위한 방법 및 시스템
US8877075B2 (en) 2012-02-01 2014-11-04 Infineon Technologies Ag Apparatuses and methods for gas mixed liquid polishing, etching, and cleaning
JPWO2013114589A1 (ja) * 2012-02-01 2015-05-11 三菱電機株式会社 光起電力装置の製造方法および光起電力装置の製造装置
US9246043B2 (en) 2012-02-01 2016-01-26 Mitsubishi Electric Corporation Manufacturing method of photovoltaic device and manufacturing apparatus for photovoltaic device
US8853054B2 (en) 2012-03-06 2014-10-07 Sunedison Semiconductor Limited Method of manufacturing silicon-on-insulator wafers
JP6016174B2 (ja) * 2012-07-31 2016-10-26 パナソニックＩｐマネジメント株式会社 太陽電池の製造方法
CN105051882B (zh) * 2013-03-15 2019-01-18 应用材料公司 基板位置对准器
BR112016001680A2 (pt) 2013-08-29 2017-09-19 Halliburton Energy Services Inc Métodos e sistemas para a geração de espécies reativas de fluoreto a partir de um precursor gasoso em uma formação subterrânea para a estimulação do mesmo
US9562291B2 (en) 2014-01-14 2017-02-07 Mei, Llc Metal etch system
JP2015213189A (ja) * 2015-07-09 2015-11-26 三菱電機株式会社 光起電力装置の製造方法
WO2026015399A1 (en) 2024-07-10 2026-01-15 Globalwafers Co., Ltd. Etching apparatus that oscillate wafers during etching

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JPS6386525A (ja) * 1986-09-30 1988-04-16 Kyushu Denshi Kinzoku Kk 半導体シリコンウエ−ハのエツチング装置
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Also Published As

Publication number Publication date
EP0673545B1 (en) 1998-12-16
EP0673545A4 (en) 1996-05-29
US5340437A (en) 1994-08-23
MY112147A (en) 2001-04-30
DE69415298D1 (de) 1999-01-28
KR950704809A (ko) 1995-11-20
CN1115588A (zh) 1996-01-24
CN1043278C (zh) 1999-05-05
SG46423A1 (en) 1998-02-20
JPH08502148A (ja) 1996-03-05
EP0673545A1 (en) 1995-09-27
KR0161794B1 (ko) 1999-02-01
JP3081246B2 (ja) 2000-08-28
DE69415298T2 (de) 1999-05-06
WO1995010850A1 (en) 1995-04-20

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