TW248603B - Semiconductor memory device - Google Patents

Semiconductor memory device

Info

Publication number
TW248603B
TW248603B TW083109814A TW83109814A TW248603B TW 248603 B TW248603 B TW 248603B TW 083109814 A TW083109814 A TW 083109814A TW 83109814 A TW83109814 A TW 83109814A TW 248603 B TW248603 B TW 248603B
Authority
TW
Taiwan
Prior art keywords
capacitor
bit line
memory device
semiconductor memory
readouts
Prior art date
Application number
TW083109814A
Other languages
English (en)
Inventor
Tetsuharu Nakakuma
Tatsuki Tsuno
Hiroshige Hirano
Joji Nakane
Nobuyuki Moriwaki
Original Assignee
Matsushita Electric Ind Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Ind Co Ltd filed Critical Matsushita Electric Ind Co Ltd
Application granted granted Critical
Publication of TW248603B publication Critical patent/TW248603B/zh

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • G11C11/221—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements using ferroelectric capacitors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/12—Bit line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, equalising circuits, for bit lines
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • G11C11/225—Auxiliary circuits
    • G11C11/2273—Reading or sensing circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/24—Memory cell safety or protection circuits, e.g. arrangements for preventing inadvertent reading or writing; Status cells; Test cells

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Dram (AREA)
  • Semiconductor Memories (AREA)
TW083109814A 1994-02-15 1994-10-22 Semiconductor memory device TW248603B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP01826894A JP3191549B2 (ja) 1994-02-15 1994-02-15 半導体メモリ装置

Publications (1)

Publication Number Publication Date
TW248603B true TW248603B (en) 1995-06-01

Family

ID=11966916

Family Applications (1)

Application Number Title Priority Date Filing Date
TW083109814A TW248603B (en) 1994-02-15 1994-10-22 Semiconductor memory device

Country Status (7)

Country Link
US (1) US5515312A (zh)
EP (1) EP0667620B1 (zh)
JP (1) JP3191549B2 (zh)
KR (1) KR100199786B1 (zh)
CN (1) CN1096680C (zh)
DE (1) DE69422901T2 (zh)
TW (1) TW248603B (zh)

Families Citing this family (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2953316B2 (ja) * 1994-08-12 1999-09-27 日本電気株式会社 不揮発性強誘電体メモリ
US5798964A (en) * 1994-08-29 1998-08-25 Toshiba Corporation FRAM, FRAM card, and card system using the same
JP3186485B2 (ja) * 1995-01-04 2001-07-11 日本電気株式会社 強誘電体メモリ装置およびその動作制御方法
JP2748873B2 (ja) * 1995-01-04 1998-05-13 日本電気株式会社 強誘電体メモリ装置およびその動作制御方法
JPH08194679A (ja) * 1995-01-19 1996-07-30 Texas Instr Japan Ltd ディジタル信号処理方法及び装置並びにメモリセル読出し方法
US5764561A (en) * 1995-11-16 1998-06-09 Rohm Co., Ltd. Ferroelectric memory devices and method of using ferroelectric capacitors
KR100396124B1 (ko) * 1996-02-28 2004-01-31 가부시끼가이샤 히다치 세이사꾸쇼 반도체장치
US6330178B1 (en) 1996-02-28 2001-12-11 Hitachi, Ltd. Ferroelectric memory device
JPH09288891A (ja) * 1996-04-19 1997-11-04 Matsushita Electron Corp 半導体メモリ装置
KR100295568B1 (ko) * 1997-02-03 2001-09-07 니시무로 타이죠 반도체 장치 및 그의 제조방법
US5911081A (en) * 1997-05-05 1999-06-08 Sun Microsystems, Inc. Method and apparatus for selectively inhibiting power shutdowns based upon the number of power shutdowns that an electrical device has been experienced
US6294439B1 (en) 1997-07-23 2001-09-25 Kabushiki Kaisha Toshiba Method of dividing a wafer and method of manufacturing a semiconductor device
US20050122765A1 (en) * 1997-11-14 2005-06-09 Allen Judith E. Reference cell configuration for a 1T/1C ferroelectric memory
US5892728A (en) * 1997-11-14 1999-04-06 Ramtron International Corporation Column decoder configuration for a 1T/1C ferroelectric memory
US5986919A (en) * 1997-11-14 1999-11-16 Ramtron International Corporation Reference cell configuration for a 1T/1C ferroelectric memory
US5969980A (en) * 1997-11-14 1999-10-19 Ramtron International Corporation Sense amplifier configuration for a 1T/1C ferroelectric memory
US6002634A (en) * 1997-11-14 1999-12-14 Ramtron International Corporation Sense amplifier latch driver circuit for a 1T/1C ferroelectric memory
US5995406A (en) * 1997-11-14 1999-11-30 Ramtron International Corporation Plate line segmentation in a 1T/1C ferroelectric memory
US5978251A (en) * 1997-11-14 1999-11-02 Ramtron International Corporation Plate line driver circuit for a 1T/1C ferroelectric memory
US5956266A (en) * 1997-11-14 1999-09-21 Ramtron International Corporation Reference cell for a 1T/1C ferroelectric memory
US5880989A (en) * 1997-11-14 1999-03-09 Ramtron International Corporation Sensing methodology for a 1T/1C ferroelectric memory
US6028783A (en) * 1997-11-14 2000-02-22 Ramtron International Corporation Memory cell configuration for a 1T/1C ferroelectric memory
KR100282045B1 (ko) * 1998-08-07 2001-03-02 윤종용 강유전체 커패시터를 구비한 불 휘발성 다이나믹 랜덤 엑세스메모리
JP3780713B2 (ja) * 1998-08-25 2006-05-31 富士通株式会社 強誘電体メモリ、強誘電体メモリの製造方法及び強誘電体メモリの試験方法
US6545902B2 (en) 1998-08-28 2003-04-08 Hitachi, Ltd. Ferroelectric memory device
KR100308188B1 (ko) * 1999-04-27 2001-10-29 윤종용 안정된 감지 마진을 가지는 강유전체 랜덤 액세스 메모리
JP2001035817A (ja) 1999-07-22 2001-02-09 Toshiba Corp ウェーハの分割方法及び半導体装置の製造方法
KR100816689B1 (ko) * 2001-12-29 2008-03-27 주식회사 하이닉스반도체 강유전체 메모리 셀어레이
US7972632B2 (en) 2003-02-28 2011-07-05 Unigen Pharmaceuticals, Inc. Identification of Free-B-Ring flavonoids as potent COX-2 inhibitors
EP1631304A4 (en) 2003-04-04 2007-03-21 Unigen Pharmaceuticals Inc FORMULATION FOR INHIBITING CYCLOOXYGENASE (COX) AND LIPOXYGENASE (LOX) FOR SKIN CARE
WO2005091301A1 (ja) * 2004-03-24 2005-09-29 Fujitsu Limited 強誘電体メモリ
JP2010102793A (ja) * 2008-10-24 2010-05-06 Toshiba Corp 半導体記憶装置
SG11201404871TA (en) * 2012-02-16 2014-09-26 Zeno Semiconductor Inc Memory cell comprising first and second transistors and methods of operating

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59162695A (ja) * 1983-03-07 1984-09-13 Nec Corp 記憶装置
US4873664A (en) * 1987-02-12 1989-10-10 Ramtron Corporation Self restoring ferroelectric memory
JPH04141897A (ja) * 1990-10-01 1992-05-15 Hitachi Ltd Ｅｅｐｒｏｍ装置
US5345414A (en) * 1992-01-27 1994-09-06 Rohm Co., Ltd. Semiconductor memory device having ferroelectric film
US5381379A (en) * 1992-12-03 1995-01-10 Sharp Kabushiki Kaisha Non-volatile dynamic random access memory device; a page store device and a page recall device used in the same; and a page store method and a page recall method

Also Published As

Publication number Publication date
CN1096680C (zh) 2002-12-18
EP0667620A3 (en) 1996-02-07
EP0667620B1 (en) 2000-02-02
JPH07226087A (ja) 1995-08-22
DE69422901T2 (de) 2000-07-27
US5515312A (en) 1996-05-07
JP3191549B2 (ja) 2001-07-23
KR950025778A (ko) 1995-09-18
EP0667620A2 (en) 1995-08-16
KR100199786B1 (ko) 1999-06-15
CN1115099A (zh) 1996-01-17
DE69422901D1 (de) 2000-03-09

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