TW202226473A - 半導體封裝體用底部填充膜及利用其的半導體封裝體的製造方法 - Google Patents

半導體封裝體用底部填充膜及利用其的半導體封裝體的製造方法 Download PDF

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TW202226473A
TW202226473A TW110132255A TW110132255A TW202226473A TW 202226473 A TW202226473 A TW 202226473A TW 110132255 A TW110132255 A TW 110132255A TW 110132255 A TW110132255 A TW 110132255A TW 202226473 A TW202226473 A TW 202226473A
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adhesive layer
semiconductor package
underfill film
semiconductor
package
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TW110132255A
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TWI769072B (zh
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崔泰鎭
李充九
朴守仁
李正進
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南韓商斗山股份公司
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Abstract

本發明係關於半導體封裝體用底部填充膜及利用其的半導體封裝體的製造方法，係關於藉由包含熔體黏度和起始溫度(Onset Temp.)被調節至預定範圍的黏接層而封裝工序簡化從而能夠提高生產效率、且能夠提高封裝體的連接可靠性的半導體封裝體用底部填充膜及利用其的半導體封裝體的製造方法。所述半導體封裝體用底部填充膜包含：基材；以及配置在所述基材的一面、150至160℃時的熔體黏度為300至1000Pa.s、且示差掃描熱分析儀DSC上起始溫度為145±5℃的黏接層。

Description

半導體封裝體用底部填充膜及利用其的半導體封裝體的製造方法
本發明係關於半導體封裝體用底部填充膜及利用其的半導體封裝體的製造方法，具體而言，係關於利用晶片佈局方式而能夠將半導體晶片移送和貼合工序簡化以及提高生產效率、且能夠提高封裝體的可靠性的半導體封裝體用底部填充膜及利用其的半導體封裝體的製造方法。
近年來，隨著電子設備的小型化、高密度化，能夠以最小的面積貼裝半導體元件的倒裝晶片(flip-chip)封裝體製造方法受到關注。
在製造倒裝晶片封裝體時，在半導體晶片與封裝體基板之間的空間配置底部填充(underfill)。底部填充不僅會保護封裝體結構免受機械衝擊和接合部的腐蝕之類的外部影響，還會藉由使晶片與基板間的熱膨脹係數差異所導致的應力最小化而起到提高封裝體製品的可靠性的作用。
這樣的底部填充藉由如下方式形成：在實施焊料回流(solder reflow)工序後，利用針頭之類的設備在半導體晶片與封裝體基板之間的空間填充液態底部填充樹脂，然後進行固化。但是，液態底部填充樹脂的填充工序應當在半導體晶片與封裝體基板之間的空白空間的整體區域均勻地提供底部填充樹脂。因此，不僅要確保用於使針頭沿半導體晶片的側面以一定的軌跡移動的針頭移動空間，還要確保用於配置針頭的富裕空間。因此，發生空間消耗，這在將使用倒裝晶片的製品小型化方面成為阻礙因素。此外，液態底部填充樹脂的填充工序由於印刷電路基板的電路圖案和貼合焊盤以及半導體晶片的焊料，使液態底部填充樹脂的擴散速度產生差異，因此會在底部填充發生氣隙或孔隙。這樣的氣隙或孔隙不僅使底部填充功能降低，還成為水分長期滲透而使封裝體的可靠性降低的原因。
另一方面，近年來，對於應對半導體元件的小型化趨勢的晶圓級封裝體(Wafer Level Package)技術的關注度日益提高。晶圓級封裝體技術與將從晶圓切下的半導體晶片一個一個進行封裝的以往方式不同，是在晶片還未分離的晶圓上連組裝也會完成的半導體封裝體技術。如果應用這種半導體封裝體技術，那麼會縮短配線連接、塑料封裝之類的半導體組裝過程，因此能夠藉由工序簡化來實現成本削減。
目前，半導體封裝分別單獨進行半導體晶片的移送工序、移送後的半導體晶片與封裝體基板的貼合工序以及高溫下的回流(reflow)工序，因此在沒有物性降低的情況下將封裝工序簡化而提高生產效率方面存在局限。為此，急切需要開發能夠應用晶圓級封裝體技術而將半導體封裝工序簡化、且能夠改善封裝體的可靠性的貼合用新型材料以及利用其的半導體封裝體製造工序。
所要解決的課題
本發明人認識到，利用單獨拾取半導體晶片而使其向貼合設備的支架水平移送且在預定位置對準的晶片佈局(chip placement)方式後實施回流工序的情況下，能夠將半導體封裝工序自動化，相比現有技術能夠減少材料損失和停機時間且使封裝工序簡化而有效提高生產效率。
為此，本發明的技術課題在於，提供一種半導體封裝體用底部填充(underfill)膜，其適合於半導體封裝時可將移送和貼合工序簡化的晶片佈局方式，而且能夠提高連接可靠性。
此外，本發明的另一技術課題在於，提供一種製造半導體封裝體的方法，其利用上述底部填充膜而簡化貼合工序以及提高生產效率，同時連接可靠性優異。
本發明的其他目的和優點可以藉由以下發明的具體實施方式和申請專利範圍來進一步明確地說明。
解決課題的方法
為了實現上述技術課題，本發明提供一種半導體封裝體用底部填充膜，其包含基材；以及配置在上述基材的一面、150至160℃時的熔體黏度為300至1000 Pa.s、且示差掃描熱分析儀(DSC)上起始溫度(Onset Temperature)為145±5℃的黏接層。
根據本發明的一實施例，上述底部填充膜可以用於晶片佈局方式(Chip Placement)，該晶片佈局方式為：拾取附著有上述黏接層的半導體晶片而附著於被貼合台支撐的封裝體基板上。
根據本發明的一實施例，上述黏接層的起始溫度可以與預設定的貼合台的預熱溫度(Ts)實質相同。
根據本發明的一實施例，上述黏接層的厚度可以為上述半導體晶片與上述封裝體基板間的間隔的80至120 %範圍。
根據本發明的一實施例，上述黏接層的示差掃描熱分析儀(DSC)上峰值頂點溫度為165±5℃，上述起始溫度與上述峰值頂點溫度之差可以為25±5℃。
根據本發明的一實施例，上述黏接層可以為黏接樹脂組合物的固化物或半固化物，上述黏接樹脂組合物包含(a)含有液態環氧樹脂、苯氧樹脂和多官能性環氧樹脂的環氧樹脂；(b)酸酐系固化劑；(c)含氮(N)雜環化合物；以及(d)填料。
根據本發明的一實施例，上述多官能性環氧樹脂、苯氧樹脂和液態環氧樹脂的混合比率可以為4:3~4:2~3重量比率。
根據本發明的一實施例，以上述環氧樹脂1當量基準，上述酸酐固化劑的含量可以為0.3至1.0酸酐當量範圍。
根據本發明的一實施例，以上述酸酐固化劑1當量基準，上述含氮雜環化合物的含量可以為0.005當量以上且小於0.02當量。
此外，本發明提供半導體封裝體的製造方法，其包括：(i)在具備凸點的半導體晶片的凸點上附著上述底部填充膜的黏接層的步驟；(ii)拾取附著有上述黏接層的半導體晶片的凸點而使其在支撐於貼合台上的封裝體基板的貼合焊盤上對準的步驟；(iii)將對準後的半導體晶片和封裝體基板投入至加壓室烘箱中的步驟；(iv)使上述半導體晶片的凸點熔融而使半導體晶片與封裝體基板連接的步驟；以及(v)使配置在上述連接後的半導體晶片與封裝體基板之間的黏接層固化的步驟。
根據本發明的一實施例，上述步驟(ii)中的拾取以及對準藉由晶片佈局方式來實施。
根據本發明的一實施例，上述步驟(ii)的貼合台可以被預熱至與上述底部填充膜所具備的黏接層的起始溫度實質相同的設定溫度(Ts)。
根據本發明的一實施例，上述步驟(ii)中的凸點與貼合焊盤間的對準可以藉由在130~150℃的貼合台溫度、常溫(RT)的貼片機頭、10~200 N、1~5秒的條件下進行壓接來實施。
根據本發明的一實施例，上述步驟(iv)中在凸點的熔融步驟後，上述黏接層內空隙面積比可以為1.0 %以下。
根據本發明的一實施例，上述步驟(v)中的黏接層的固化溫度可以為160至250℃範圍。
發明效果
根據本發明的一實施例，藉由具備具有調節至預定範圍的熔體黏度和起始溫度(Onset Temp.)的黏接層，且應用晶片佈局方式而進行半導體晶片移送和貼合工序的簡化以及自動化，從而能夠實現批量生產。並且能夠提高封裝體的連接可靠性。
因此，本發明的底部填充膜在本領域的半導體裝置及其製作工序中也可以有效地應用。
本發明的效果不受以上例示的內容的限制，在本說明書中包含更加多樣的效果。
以下，詳細說明本發明。本發明的實施例是為了向本技術領域中具有通常知識者更加完整地說明而提供的，以下實施例可以變形為各種各樣的其他形態，本發明的範圍不受以下實施例的限定。此時，本說明書全篇中相同的參考符號指代相同的結構。
除非另行定義，本說明書中所使用的全部用語(包括技術和科學用語)可以按照本發明所屬技術領域中具有通常知識者共同理解的含義來使用。另外，一般使用的詞典中所定義的用語除非被明確地另行定義否則不應理想地或過度地解釋。
此外，附圖中示出的各構成的大小以及厚度是為了便於說明而隨意示出的，本發明並不會受到圖示的限定。附圖中，為了確切展現各層以及區域而會將厚度放大後示出。並且，附圖中，為了便於說明，誇張地示出了一部分層以及區域的厚度。
此外，說明書全篇中，當指出某一部分“包含”某一構成要素時，除非存在特別相反的記載，否則其含義是可以進一步包含其他構成要素，而非將其他構成要素排除。此外，說明書全篇中，“在……上”的含義是，不僅包括位於對象部分的上或下的情況，也包括其中間還有其他部分的情況，而且並非以重力方向為基準位於上部。另外，本申請說明書中，“第一”、“第二”等用語並非表示任何順序或重要度，是為了將構成要素彼此區別而使用。另外，當記載某一構成要素與另一構成要素“連結”、“結合”或“連接”時，不僅包括該構成要素與該另一構成要素直接連結、結合或連接的情況，還包括藉由存在於該構成要素與該另一構成要素之間的其他構成要素來“連結”、“結合”或“連接”的情況。
另外，說明書全篇中，所謂“俯視”，其含義是從上部觀察對象部分，所謂“截面”，其含義是從側面觀察將對象部分垂直切割後的截面。
＜半導體封裝體用底部填充膜＞
圖1是概略性示出本發明的第一實施例的半導體封裝體用底部填充膜的截面圖，圖2是概略性示出本發明的第二實施例的半導體封裝體用底部填充膜的截面圖。
本發明的底部填充膜10A、10B是用於緩解在半導體封裝時施加於半導體晶片的凸點與封裝體基板的貼合焊盤的連接部的應力(stress)的非導電性黏接膜，具體而言，具有適合於晶片佈局(Chip Placement)方式的物性。
如圖1和圖2所示，上述底部填充膜10A、10B包含基材11以及配置在上述基材的一面上的黏接層12。選擇性地，可以進一步包含配置在上述黏接層的另一面的另一基材(以下，稱為“第二基材”)13(參照圖2)。
以下，參照圖1來說明本發明的第一實施例的半導體封裝體用底部填充膜10A。
基材
本發明的底部填充膜中，基材11是支撐黏接層且保護黏接層的表面的部分，使用底部填充膜時會被剝離而去除。
作為這樣的基材11，只要是本領域中通常已知的塑料膜且能夠剝離就可以無限制地使用，此外，也可以使用脫模紙。
作為可使用的塑料膜的非限制性例子，有聚對苯二甲酸乙二醇酯(PET)、聚對苯二甲酸丁二醇酯、聚萘二甲酸乙二醇酯等聚酯膜、聚乙烯膜、聚丙烯膜、玻璃紙、二乙醯纖維素膜、三乙醯纖維素膜、乙醯纖維素丁酸酯膜、聚氯乙烯膜、聚偏二氯乙烯膜、聚乙烯醇膜、乙烯-乙酸乙烯酯共聚物膜、聚苯乙烯膜、聚碳酸酯膜、聚甲基戊烯膜、聚碸膜、聚醚醚酮膜、聚醚碸膜、聚醚醯亞胺膜、聚醯亞胺膜、氟樹脂膜、聚醯胺膜、丙烯酸樹脂膜、降冰片烯系樹脂膜、環烯烴樹脂膜等。這樣的塑料膜可以為透明或半透明，或者也可以被著色或未被著色。作為一例，基材11可以為聚對苯二甲酸乙二醇酯(PET)。作為另一例，基材11可以為聚醯亞胺(PI)。
這樣的塑料膜上可以配置有脫模層。脫模層能夠在將基材11與黏接層12分離時以黏接層不受到損傷且維持形狀的狀態使基材與黏接層容易地分離。這裡，脫模層可以為一般使用膜狀的脫模物質。
作為脫模層中所使用的脫模劑的成分，沒有特別限定，可以使用本領域已知的通常的脫模劑成分。作為其非限制性例子，可以舉出環氧系脫模劑、由氟樹脂構成的脫模劑、有機矽系脫模劑、醇酸樹脂系脫模劑、水溶性高分子等。此外，根據需要，可以包含粉末狀填料、比如矽、二氧化矽等作為脫模層的成分。此時，微粒形態的粉末填料可以混用2種類型的粉末填料，此時，它們的平均粒度可以考慮所形成的表面粗糙度來適當選擇。此外，脫模層的厚度可以在本領域已知的通常的範圍內適當調節。另外，形成脫模層的方法沒有特別限定，可以採用熱壓、熱輥層壓、擠出層壓、塗佈液的塗佈、乾燥等習知的方法。
上述基材11的厚度沒有特別限定，可以在本領域已知的通常的範圍內調節，比如，可以為約25至150 μm，具體可以為約30至100 μm，更具體可以為約30至50 μm。此外，基材11的脫模能力沒有特別限定，比如，可以為約1至500 gf/英寸(inch)，具體可以為約10至100 gf/英寸範圍。
黏接層
本發明的底部填充膜中，黏接層12配置在基材11的一面上，能夠在半導體封裝時將半導體晶片與封裝體基板對準時使半導體晶片黏接於封裝體基板，且作為底部填充(underfill)能夠將由於半導體晶片與封裝體基板間的熱膨脹係數差異而產生的應力和變形進行再分配。
本發明的黏接層12是半固化的狀態，在約150至160℃具有1000 Pa.s以下的最低熔體黏度(lowest melt viscosity)。這樣的黏接層12在封裝時配置在具備凸點(bump)的半導體晶片與具備貼合焊盤的封裝體基板之間，且在130~150℃的貼合台溫度、常溫的貼片機頭、10~200 N、1~5秒的條件下使它們壓接。此時，實質進行貼合的貼合台和貼片機中貼合台施加預定的溫度，而貼片機頭(Die Bonder Head)為常溫狀態。因此，與以往使用必須施加高溫的貼片機的現有技術存有區別。
具體而言，本發明的黏接層12的最低熔體黏度在約150至160℃低至約1000 Pa.s以下，具體為100至900 Pa.s，更具體約300至600 Pa.s，因此即使藉由預定條件(例如，約150℃、75~200 N、1~3秒)下的壓接也容易熔融而具有流動性。因此，在將半導體晶片的凸點與封裝體基板的貼合焊盤預貼合時，位於半導體晶片的凸點與封裝體基板的貼合焊盤之間的黏接層12容易熔融而填充凸點與貼合焊盤之間的空白空間從而能夠提高連接可靠性。特別是，由於上述黏接層12的流動性大，因此也能夠填充微小間距(fine pitch)的微小空白空間。
此外，本發明的黏接層12不僅能夠起到底部填充(underfill)的作用，也能夠起到熔劑(flux)的作用，因此與以往不同，無需在貼合焊盤上塗佈另外的熔劑(flux)或洗滌熔劑。因此根本不會產生由熔劑的殘渣或熔劑洗滌溶劑的殘留物導致的空隙。如此，本發明的黏接層的填充(gap-filling(填隙))效果優異，能夠使空隙(void)產生最小化。
特別是，由於本發明的底部填充膜利用拾取附著有黏接層的半導體晶片並將其水平移動、對準以及附著於被貼合台支撐的封裝體基板上的晶片佈局(Chip Placement)方式，因此需要調節黏接層12的物性以適合於上述方式。比如，在黏接層12的起始溫度(Onset Temp.)與預設定的貼合台的預熱溫度(Ts)控制得實質相同的情況下，即使在預定條件下實施壓接工序、比如後述的預貼合(pre-bonding)工序，也能夠穩定附著，因此能夠使半導體晶片移送工序和貼合工序簡化而提高生產效率。
根據另一具體例，上述黏接層12在示差掃描熱分析儀(Differential Scanning Calorimeter，DSC)上的起始溫度(Onset Temperature)可以為約145±5℃，具體可以為143至147℃。這裡，起始溫度是黏接層12開始部分固化的起始點，其具體含義是，為了起到熔劑(flux)功能，半固化狀態的黏接層內存在的酸二酐固化劑的酸酐基開環(Ring open)成羧基而發生固化反應。如此，藉由精確地將開始固化的黏接層12的起始溫度(Onset Temp.)與實現封裝貼合的貼合台的預熱溫度(Ts)控制得相同，從而能夠適合於晶片佈局方式。
此外，上述黏接層12的峰值頂點溫度(Peak Temperature)可以為165±5℃，上述起始溫度(Onset Temp.)與上述峰值頂點溫度(Peak Temp.)間的溫度差(ΔT)可以為25±5℃。這裡，峰值頂點溫度(Peak temp.)的含義是DSC圖中的最高峰值溫度。在黏接層12具有上述起始溫度和峰值頂點溫度特性的情況下，不僅能夠藉由晶片佈局方式而確保最適合的物性，而且能夠在高溫下顯示出穩定的固化特性。
上述黏接層12的厚度考慮黏接層的最低熔體黏度等而調節。作為一例，以上述半導體晶片與封裝體基板間的間隔(例如，100 %)為基準，黏接層12的厚度可以為80至120 %範圍。
本發明的黏接層12只要滿足上述的熔體黏度(M.V)和起始溫度(Onset Temp.)物性數值，則對構成上述黏接層12的成分及其組成等沒有特別限制。這樣的黏接層12可以由黏接樹脂組合物的固化物或半固化物構成。作為上述黏接樹脂組合物的具體例，包含(a)含有液態環氧樹脂、苯氧基系樹脂和多官能性環氧樹脂的環氧樹脂、(b)酸酐系固化劑、(c)含氮(N)雜環化合物、以及(d)填料(filler)。
更具體而言，本發明中，作為構成黏接層12的主樹脂成分，將包含液態環氧樹脂、苯氧基系樹脂和多官能性環氧樹脂在內的至少3種以上混用，並將它們的混合比率調節至預定範圍。
至少3種以上的環氧樹脂中，液態環氧樹脂作為在25±5℃為液體狀態的環氧樹脂，是熱固性樹脂。這樣的液態環氧樹脂能夠對黏接樹脂組合物賦予黏接性、固化性，而且能夠對固化後的黏接層賦予固化均勻性。
作為可使用的液態環氧樹脂的非限制性例子，有液態雙酚A型環氧樹脂、液態雙酚F型環氧樹脂、液態萘型環氧樹脂、液態氨基苯酚型環氧樹脂、液態氫化雙酚型環氧樹脂、液態脂環式環氧樹脂、液態醇醚型環氧樹脂、液態環狀脂肪族型環氧樹脂、液態芴型環氧樹脂、液態矽氧烷系環氧樹脂等，其中，液態雙酚A型環氧樹脂、液態雙酚F型環氧樹脂、液態萘型環氧樹脂從黏接性、固化性、耐久性、耐熱性方面考慮是合適的。它們可以單獨使用或兩種以上混合使用。具體而言，作為液態環氧樹脂的製品，有新日鐵化學制雙酚F型環氧樹脂(製品名：YDF8170)、DIC制雙酚A型環氧樹脂(製品名：EXA-850CRP)、新日鐵化學制雙酚F型環氧樹脂(製品名：YDF870GS)、DIC制萘型環氧樹脂(製品名：HP4032D)、三菱化學制氨基苯酚型環氧樹脂(等級：JER630、JER630LSD)、邁圖高新制矽氧烷系環氧樹脂(製品名：TSL9906)、新日鐵化學株式會社制1,4-環己烷二甲醇二縮水甘油醚(製品名：ZX1658GS)等，但不限定於此。
苯氧樹脂是在至少一側末端含有環氧基的熱塑性高分子，分子內環氧基與分子量相比當量非常小，因此雖參與固化，但在高溫下可以賦予流動性。由於這樣的苯氧樹脂，因此本發明的黏接層能夠在常溫(約25±5℃)下按照半固化(B階段(B-stage))狀態的膜形狀來形成。
作為可使用的苯氧樹脂，只要是在高分子鏈內含有苯氧基且在至少一個末端含有環氧基的高分子就沒有特別限定。
比如，苯氧樹脂可以為以下化學式1所表示的化合物，但不特別限於此。 [化學式1]
Figure 02_image001
上述化學式1中， a和b分別為1至4的整數， 多個R 1和多個R 2彼此相同或不同，各自獨立地選自由氫、鹵素、C 1~C 10的烷基、C 3~C 20的環烷基、C 5~C 20的芳基和硝基組成的群組，具體而言，各自獨立地選自由氫、鹵素、C 1~C 5的烷基、C 3~C 10的環烷基、C 5~C 10的芳基和硝基組成的群組； R 3至R 8彼此相同或不同，各自獨立地為氫或羥基，其中，R 3至R 8中的至少一個為羥基； X 1為單鍵或者為C 1~C 10的伸烷基，具體為單鍵或者為C 1~C 5的伸烷基， Y 1和Y 2彼此相同或不同，各自獨立地為氫、羥基或環氧基，其中，Y 1和Y 2中的至少一個為環氧基， n為30至400的整數。
此外，多官能性環氧樹脂是含有至少2個以上的環氧基的環氧樹脂。這樣的多官能性環氧樹脂對黏接層賦予電絕緣性、耐熱性、化學穩定性、強度(toughness)以及成型性。
作為可使用的多官能性環氧樹脂，只要是單位分子(單體)含有2個以上、具體2個至5個環氧基的環氧樹脂就沒有特別限定。作為多官能性環氧樹脂的非限制性例子，有藉由將苯酚或烷基酚類與羥基苯甲醛的縮合物環氧化而得到的環氧樹脂、苯酚酚醛清漆型環氧樹脂、甲酚酚醛清漆型環氧樹脂、苯酚芳烷基型環氧樹脂、聯苯(biphenyl)型環氧樹脂、雙酚A型環氧樹脂、雙酚F型環氧樹脂、線形脂肪族環氧樹脂、脂環式環氧樹脂、雜環式環氧樹脂、含螺環的環氧樹脂、XYLOK型環氧樹脂、多官能型環氧樹脂、酚醛樹脂酚醛清漆型環氧樹脂、雙酚A/雙酚F/雙酚AD的酚醛清漆型環氧樹脂、雙酚A/雙酚F/雙酚AD的縮水甘油醚環氧樹脂、雙羥基聯苯系環氧樹脂、二環戊二烯系環氧樹脂、萘系環氧樹脂等。其中，優選在25±5℃時為非液態的多官能性環氧樹脂。這裡，所謂在25±5℃時為非液態，是指在25±5℃時為半固態或固態的環氧樹脂，也包括接近於固態的環氧樹脂。
構成上述黏接層12的至少3種環氧樹脂、比如液態環氧樹脂、苯氧基系樹脂以及多官能性環氧樹脂間的含量比率優選考慮黏接性和填充性等而調節至預定範圍。例如，多官能性環氧樹脂、苯氧基系樹脂和液態環氧樹脂間的使用比率(混合比率)可以為4:3~4:2~3重量比率，具體可以為4:3~3.5:2~2.5重量比率。在滿足上述環氧樹脂混合比率的情況下，藉由將最低熔體黏度和固化開始的起始溫度(Onset Temp.)控制至預定範圍，從而能夠藉由改善黏接性和填充性而確保封裝體的連接可靠性，且由於適合於晶片佈局方式，因此能夠藉由半導體晶片移送和貼合工序的簡化而提高生產效率。
構成本發明的黏接層12的黏接樹脂組合物包含酸酐系固化劑。酸酐系固化劑能夠使液態環氧樹脂、苯氧樹脂和多官能性環氧樹脂中的至少一種固化，並且能夠發揮熔劑(flux)特性。
作為可使用的酸酐系固化劑的非限制性例子，有四氫鄰苯二甲酸酐、甲基四氫鄰苯二甲酸酐、甲基六氫鄰苯二甲酸酐、六氫鄰苯二甲酸酐、三烷基四氫鄰苯二甲酸酐、甲基環己烯二甲酸酐、鄰苯二甲酸酐、馬來酸酐、均苯四酸酐等，它們可以單獨使用或兩種以上混合使用。
上述酸酐固化劑的含量沒有特別限制，可以在本領域習知的範圍內適當調節。例如，以上述環氧樹脂1當量基準，酸酐固化劑的含量可以為0.3至1.0酸酐當量範圍，具體可以為0.4至0.7當量。
除了上述酸酐系固化劑以外，本發明的黏接樹脂組合物可以進一步追加包含一種以上本領域中作為使環氧樹脂固化的成分而已知的固化劑。例如，有間苯二胺、二氨基二苯基甲烷、二氨基二苯基碸等芳香族胺系固化劑；二乙三胺、三乙四胺等脂肪族胺系固化劑；苯酚芳烷基型酚醛樹脂、苯酚酚醛清漆型酚醛樹脂、XYLOK型酚醛樹脂、甲酚酚醛清漆型酚醛樹脂、萘酚型酚醛樹脂、萜烯型酚醛樹脂、多官能型酚醛樹脂、二環戊二烯系酚醛樹脂、萘型酚醛樹脂、由雙酚A和甲階酚醛樹脂合成的酚醛清漆型酚醛樹脂等之類的酚系固化劑；二氰二胺 (dicyandiamide)等潛伏性固化劑等，它們可以單獨使用或兩種以上混合使用。
構成本發明的黏接層12的黏接用樹脂組合物包含含氮(N)雜環化合物。含N雜環化合物作為能夠促進固化的固化催化劑之一，不僅可以調節固化速度，還可以確保黏接層的高溫穩定性。
這樣的含氮(N)雜環化合物可以為選自由以下化學式2所表示的化合物和以下化學式3所表示的化合物組成的群組中的一種以上。 [化學式2]
Figure 02_image003
[化學式3]
Figure 02_image005
上述化學式2和3中， n1為1或2， n2分別為0至2的整數， X 1至X 6彼此相同或不同，各自獨立地為N或C(R 1)，其中，X 1至X 6中的1個以上為N， Y 1至Y 6彼此相同或不同，各自獨立地為N(R 2)或C(R 3)(R 4)，其中，Y 1至Y 6中的1個以上為N(R 2)， 此時，多個C(R 1)彼此相同或不同，多個N(R 2)彼此相同或不同，多個C(R 3)(R 4)彼此相同或不同， R 1、R 2、R 3和R 4各自獨立地選自由氫、氘(D)、鹵素、氰基、硝基、C 1~C 20的烷基、C 2~C 20的烯基和C 2~C 20的炔基組成的群組。
具體而言，上述化學式2中，X 1至X 6中的1~2個可以為N，其餘可以為C(R 1)。
此外，上述化學式3中，Y 1至Y 6中的1~2個可以為N(R 2)，其餘可以為C(R 3)(R 4)。
此外，上述化學式2和3中，R 1、R 2、R 3和R 4各自獨立地可以選自由氫、氘(D)、鹵素、氰基、硝基、C 1~C 12的烷基、C 2~C 12的烯基和C 2~C 12的炔基組成的群組。
作為上述化學式2所表示的化合物的例子，有吡嗪系(pyrazine-based)化合物、吡啶系(pyridine-based)化合物、咪唑系(Imidazole-based)化合物等，但不限定於此。具體而言，上述化學式2所表示的化合物的非限制性例子可以為以下化學式2a所表示的化合物。 [化學式2a]
Figure 02_image007
作為上述化學式3所表示的化合物的例子，有呱嗪系(piperazine-based)化合物等，但不限定於此。具體而言，上述化學式3所表示的化合物的非限制性例子可以為以下化學式3a所表示的化合物、以下化學式3b所表示的化合物。 [化學式3a]
Figure 02_image009
[化學式3b]
Figure 02_image011
作為一例，含N雜環化合物可以包含選自由吡嗪系(pyrazine-based)化合物、吡啶系(pyridine-based)化合物和呱嗪系(piperazine-based)化合物組成的群組中的一種以上。
本發明的黏接樹脂組合物中，含N雜環化合物的含量優選考慮所使用的酸酐系固化劑的種類及其含量來調節。例如，以上述酸酐固化劑1當量基準，上述含氮雜環化合物含量可以為0.005當量以上且小於0.02當量，具體可以為0.01至0.015當量。
形成本發明的黏接層12的黏接樹脂組合物包含本領域習知的通常的填料(filler)。填料不僅能夠藉由表現出觸變特性(thixotropic property)來調節熔體黏度，還能夠在提高黏接性的同時降低熱膨脹係數。
這樣的填料可以為有機填料或無機填料。具體而言，作為無機填料，有金粉、銀粉、銅粉、鎳粉等之類的金屬成分；氧化鋁、氫氧化銥、氫氧化鎂、碳酸鈣、碳酸鎂、矽酸鈣、矽酸鎂、氧化鈣、氧化鎂、氧化鋁、氮化鋁、二氧化矽、氮化硼、二氧化鈦、玻璃、氧化鐵、陶瓷等之類的非金屬成分，作為有機填料，有碳、橡膠系填料、聚合物系填料等，但不限定於此。它們可以單獨使用或兩種以上混合使用。
填料的形狀以及大小沒有特別限制，比如，填料的形狀可以為方形、球形等，平均粒徑可以為約10至100 nm範圍。如果填料的平均粒徑為上述範圍，則能夠進一步提高固化物的機械物性。作為一例，填料可以為具有約10至100 nm的平均粒徑的二氧化矽。
這樣的填料的含量沒有特別限定，比如，可以為將黏接樹脂組合物的總量(例如，固體成分基準)調節成100重量%的餘量，具體而言，以環氧樹脂的總量(例如，100重量份)為基準，可以為約10~50重量份，具體可以為20至40重量份。在填料的含量處於上述數值範圍的情況下，形成具有低熱膨脹係數(CTE)的黏接層，因此基板與半導體元件間的熱膨脹係數差異小而能夠使翹曲(warpage)或裂紋(crack)產生最小化。
根據本發明的一具體例，關於形成黏接層12的黏接樹脂組合物，以上述組合物的總重量(例如，100重量份)為基準，環氧樹脂的含量(即，將多官能性環氧樹脂、苯氧樹脂和液態環氧樹脂合計後的整體含量)以樹脂組合物的總量為基準可以為約40~60重量%範圍，酸酐系固化劑的含量以樹脂組合物的總量為基準可以為約10~20重量%範圍，含N雜環化合物的含量以樹脂組合物的總量為基準可以為約0.1~0.5重量%範圍。此外，可以包含滿足上述組合物的總重量的餘量的溶劑。這裡，溶劑只要是滿足上述組合物100重量份的餘量就沒有特別限制，例如，可以為30至60重量份，具體可以為30至50重量份。此時，構成整體環氧樹脂的多官能性環氧樹脂、苯氧樹脂和液態環氧樹脂間的使用比率(混合比率)可以為4:3~4:2~3重量比率。
上述溶劑只要與環氧樹脂的混合性優異而能夠使它們均勻地分散或將它們穩定地溶解就沒有特別限定。作為這樣的溶劑的例子，可以為水、有機溶劑或它們的混合溶劑，作為其非限制性例子，有甲基醇、乙基醇、異丙醇、丁基醇等之類的醇系溶劑；甲基賽珞蘇(methyl cellosolve)、乙基賽珞蘇、丁基賽珞蘇、丙二醇單甲基醚、丙二醇單乙基醚、賽珞蘇乙酸酯等之類的醚系溶劑；甲基乙基酮、環己酮、丙酮、二丙酮醇、作為酯類的乙酸甲酯、乙酸乙酯等之類的酮系溶劑；乙酸甲酯、乙酸乙酯等之類的酯系溶劑；氯仿、二氯甲烷、四氯乙烷等之類的鹵代烴系溶劑等，此外，有二甲基亞碸、乙二醇、甘油、山梨糖醇、甲醯胺、N-甲基甲醯胺、N,N-二甲基甲醯胺、乙醯胺、N-甲基乙醯胺、N-二甲基乙醯胺、N,N-二甲基甲醯胺、四氫呋喃、N-甲基-2-吡咯烷酮、硝基甲烷、乙腈等。它們可以單獨使用或兩種以上混合使用。
具有上述組成的本發明的黏接層12不僅操作性容易，黏接力優異，而且在約150至160℃的最低熔體黏度低至約1000 Pa.s以下，因此空隙產生最小化且填充性優異而能夠提高連接可靠性。此外，由於將黏接層的起始溫度(Onset Temp.)與貼合台的預熱溫度(Ts)調節得相同，因此適合於晶片佈局方式而能夠容易地實現半導體封裝。
只要不損害上述黏接層的固有特性，那麼本發明的黏接樹脂組合物視需要可以根據上述組合物的使用目的以及使用環境而選擇性進一步包含本領域習知的通常的添加劑。例如，有丙酮、甲基乙基酮、甲苯、乙酸乙酯等溶劑、增黏劑、偶聯劑、抗靜電劑、密合力增強劑、潤濕性增強劑、流平增強劑等，但不限定於此。這樣的添加劑的含量沒有特別限定，可以按照本技術領域已知的通常的範圍來使用。比如，以上述樹脂組合物的總量為基準，可以為約0.01至10重量%。
上述黏接樹脂組合物可以藉由本技術領域通常已知的方法來製造。比如，可以將液態環氧樹脂、苯氧樹脂、多官能性環氧樹脂、酸酐系固化劑、含N雜環化合物、填料以及選擇性的添加劑使用球磨機、珠磨機、3輥磨機(3roll mill)、籃式磨機(basket mill)、研磨機(dyno mill)、行星式磨機(planetary)等混合設備在室溫至適當升溫後的溫度下混合並攪拌而製造黏接樹脂組合物。
本發明的底部填充膜可以根據本技術領域已知的通常的方法來製造。比如，可以藉由如下方式來製造底部填充膜：將藉由上述方法得到的黏接樹脂組合物根據需要利用能夠進行稀釋的有機溶劑進行稀釋而調成容易進行塗膜製造的適當濃度後，將其在基材上塗佈並乾燥。
關於上述塗佈並乾燥的方式，只要是能夠藉由棒塗、凹版塗佈、缺角輥塗佈、逆轉輥塗佈、輥刀塗佈、模塗、模唇塗佈等形成塗膜的方法就沒有特別限定。
如上構成的本發明的底部填充膜的最低熔體黏度低，因此在半導體晶片與封裝體基板間的預貼合時使空隙產生最小化，且填充性優異而能夠提高封裝體的連接可靠性，而且能夠應用於微小間距(fine pitch)。此外，由於採用晶片佈局方式，因此與以往不同，可以藉由將半導體晶片的移送以及貼合工序簡化而實施批量回流(mass reflow)工序。
以下，對圖2所示的本發明的第二實施例的底部填充膜10B進行說明。
如圖2所示，本發明的底部填充膜10B可以包含基材(以下，稱為“第一基材”)11；配置在上述基材的一面上的黏接層12；以及配置在上述黏接層12的另一面的另一基材(以下，稱為“第二基材”)13。
本發明中可使用的第一基材11和黏接層12與第一實施例的基材和黏接層部分中記載的相同，因此省略。
本發明中，第二基材13是配置在黏接層13的另一面而支撐黏接層並且保護黏接層的表面的部分，能夠剝離，因此在使用膜時會被剝離而去除。
這樣的第二基材13與第一基材相同或不同，對於第二基材的例子的說明與第一實施例的基材部分中記載的相同，因此省略。
＜半導體封裝體的製造方法＞
本發明的另一實施例提供利用上述底部填充膜10A、10B的多種半導體封裝體的製造方法。
特別是，上述底部填充膜10A、10B的黏接層不僅在約150~160℃時最低熔體黏度低至約1000 Pa.s以下，而且黏接層的起始溫度(Onset Temp.)與貼合台的預熱溫度實質相同，因此即使在預定條件下實施壓接(預貼合(pre-bonding))，也會因黏接層容易具備流動性而能夠無空隙地填充半導體晶片與封裝體基板間的間隙(gap)，由此能夠提高半導體封裝體的連接可靠性。因此，本發明藉由利用上述底部填充膜，不僅能夠簡化半導體封裝體的製造工序，而且能夠提高生產效率，並且製造連接可靠性優異的半導體封裝體。
特別是，以往在半導體封裝中需要分別對實現貼合的貼合台和貼片機頭施加特定高溫和高壓。與此相比，本發明中藉由使用調節至上述物性的底部填充膜，從而即使不對貼片機頭(Die Bonder Head)另外施加高溫，也能夠完全實施半導體封裝，因此能夠藉由製造工序的簡化以及費用削減而提高生產率。此外，由於之後實施回流工序而以空隙達到最小的狀態來實施電連接，因此能夠提高封裝體的可靠性。
以下，對本發明的一實施方式的半導體封裝體的製造方法進行說明。但是，上述半導體封裝體不僅限於以下製造方法，可以根據本領域習知的通常的方法來無限制地製造。根據需要可以改變或選擇性混用各工序的步驟來實施。
根據上述半導體封裝體的製造方法的一實施例，可以包括：(i)在具備凸點的半導體晶片的凸點上附著上述底部填充膜的黏接層的步驟(“S100步驟”)；(ii)拾取附著有上述黏接層的半導體晶片的凸點並使其在支撐於貼合台上的封裝體基板的貼合焊盤上對準的步驟(“S200步驟”)；(iii)將對準後的半導體晶片和封裝體基板投入至加壓室烘箱中的步驟(“S300步驟”)；(iv)使上述半導體晶片的凸點熔融而使半導體晶片與封裝體基板連接的步驟(“S400步驟”)；以及(v)使配置在上述連接後的半導體晶片與封裝體基板之間的黏接層固化的步驟(“S500步驟”)。
以下，參照圖3至圖6，將本發明的半導體封裝體的製造方法分成不同的工序步驟來進行說明，內容如下。
(a) 將黏接層配置於半導體晶片的步驟
如圖3所示，在具備凸點21的半導體晶片20的凸點21上配置上述底部填充膜10A、10B的黏接層12(以下，稱為“S100步驟”)。
一般而言，在半導體晶片20上沿晶片的邊緣形成有用於將內部的電子電路與外部連接的端子(焊盤)(未圖示)，而且根據需要可以沿晶片的中央形成有1列或2列。
在這樣的半導體晶片的端子上分別形成有凸點(bump)21。上述凸點作為封裝時將基板與半導體晶片點連接的外部端子，有焊料凸點(solder bump)或金凸點(Au bump)等。
本發明中，如圖3所示，從上述底部填充膜10A、10B將基材11、13分離後，僅將黏接層12配置於半導體晶片的凸點21側。此時，可以按照約30~100 N的壓力使具備凸點21的半導體晶片20加壓層疊在黏接層12上。此外，需要時，可以使上述半導體晶片20在低於黏接層的起始溫度(onset temperature)的溫度、比如50~150℃的溫度下加壓層疊。由此，黏接層以半固化狀態(B階段)壓接在半導體晶片的凸點上。此時，黏接層不僅可以起到底部填充的作用，也可以起到熔劑(flux)的作用，因此本發明與以往不同，無需利用熔劑(flux)來洗滌凸點。
(b) 半導體晶片和基板的對準步驟
使上述S100步驟中壓接有黏接層12的半導體晶片20在封裝體基板30上對準(以下，稱為“S200步驟”)。
具體而言，本發明中，作為半導體晶片的移送工序以及將移送後的半導體晶片在被貼合台支撐的封裝體基板上對準並附著的工序，應用晶片佈局(Chip Placement)方式。
此時，安放封裝體基板的貼合台優選預先被預熱至與上述底部填充膜所具備的黏接層的起始溫度(Onset Temp.)實質相同的設定溫度(Ts)。例如，貼合台的預熱溫度(Ts)可以為145±5℃。
上述被貼合台支撐的封裝體基板30可以無限制地使用本領域習知的通常的基板。例如，作為至少一面形成有電路圖案(未圖示)的基板，比如可以為印刷電路基板(PCB)。這樣的封裝體基板30在與半導體晶片20的凸點21位置相對應的區域形成有貼合焊盤31。
本發明中，如圖4所示，以形成有凸點21的半導體晶片20排列在貼合焊盤31上的方式，在封裝體基板30上搭載半導體晶片20。具體而言，可以在約130~150℃的貼合台溫度、常溫(RT)的貼片機頭、10~200 N、1~5秒的條件下，將半導體晶片20的凸點21加壓於封裝體基板30的貼合焊盤31上，從而使封裝體基板30與半導體晶片20預貼合(pre-bonding)。此時，配置在半導體晶片20與封裝體基板30之間的黏接層12如上所述因最低熔體黏度低而流動。
另一方面，本發明中，黏接層12含有可以起到熔劑功能的成分，因此與以往不同，無需在S200步驟前將熔劑(flux)塗佈於封裝體基板30的貼合焊盤31。因此，本發明中，能夠省略對於貼合焊盤的熔劑塗佈工序以及熔劑洗滌工序。
(c) 空隙去除步驟
將在S200步驟中對準的半導體晶片和封裝體基板在預定條件下投入至加壓室烘箱(pressure chamber oven，PCO)中(以下，稱為“S300步驟”)。
上述加壓室烘箱的條件沒有特別限制，例如，可以在約100至200℃、具體約110至150℃的烘箱中將空隙(void)去除。
(d) 凸點的熔融步驟
如圖5所示，使半導體晶片20的凸點21熔融而將半導體晶片20與封裝體基板30電連接、機械連接(以下，稱為“S400步驟”)。
作為將凸點回流(reflow)的步驟，凸點熔融而半導體晶片20與封裝體基板30電連接、機械連接。
此時，配置在半導體晶片20與封裝體基板30之間的黏接層12也一起熔融，因而黏接層內空隙面積比變小。例如，回流工序後上述黏接層12內空隙面積比每1 m 2可以為1 %以下。由此，能夠進一步提高根據本發明製造的半導體封裝體的連接可靠性。
(e) 黏接層的固化步驟
如圖6所示，使配置在上述S300步驟中連接的半導體晶片20與封裝體基板30之間的黏接層12固化(以下，稱為“S500步驟”)。
本發明的黏接層12具有約145±5℃的起始溫度，因此S400步驟可以在高於上述起始溫度的溫度、比如在約160℃以上、具體在160至250℃實施。
黏接層的固化時間可以根據固化溫度來適當調節，例如，可以為約0.5至3小時。
接著，根據需要，可以實施本領域習知的後續工序。例如，可以將封裝體基板切割成單元基板形態而進行單片化。此時，將印刷電路基板形態的封裝體基板完全切割成封裝體單元的工序可以利用本領域已知的通常的工序、比如鋸片(blade)或雷射切割(laser cutting)等來實施。
以下，藉由實施例來具體說明本發明，但以下實施例和實驗例僅是例示本發明的一方式，本發明的範圍不限於以下實施例和實驗例。 [ 實施例 1]1-1. 黏接樹脂組合物的製造
按照以下表1中記載的組成將各成分混合而製造實施例1的黏接樹脂組合物。表1中記載的各成分的含量單位為重量份(重量比率)，具體而言，填料的含量以環氧樹脂100重量份為基準。此外，固化劑以環氧基1當量為基準設定其含量，催化劑的含量以所使用的固化劑1當量為基準。 1-2. 底部填充膜的製造
在PET脫模膜(厚度：38 μm)的一面上，模塗實施例1-1中製造的各個黏接用樹脂組合物，然後乾燥而形成黏接層(厚度：18 μm)，從而製造非導電性黏接膜。 [表1]
黏接用樹脂組合物 實施例1 (B538) 實施例2 實施例3 比較例1 比較例2
環氧樹脂 A)多官能環氧樹脂 (KDCP-130) 44.4 42.1 42.1 40 20
B)苯氧基環氧樹脂 (YP-70) 33.4 36.8 31.6 40 20
C)液態環氧樹脂 (YD-128) 22.2 21.1 26.3 20 20
環氧樹脂比率 (A : B : C) 4 : 3 : 2 4 : 3.5 : 2 4 : 3 : 2.5 4 : 4 : 2 4 : 4 : 2
固化劑 MHHPA 0.5當量 0.5 0.5 0.5 0.5
催化劑 2E4MZ-A 0.01當量 0.01 0.01 0.02 -
Figure 02_image009
 - - - - 0.1
填料 二氧化矽 30.0 30 30 30 30
黏度 最低熔體黏度(M.V, Pa s) 653 922 477 1408 881
DSC (℃) 起始溫度 145 145 144 130 174
峰值頂點溫度 165 165 165 155 190
ΔT 20 20 21 25 16
* YD-128：國都化學有限責任公司(KUKDO Chemical co., Ltd.) * YP-70：國都化學有限責任公司 * KDCP-130：國都化學有限責任公司 * MHHPA：甲基六氫鄰苯二甲酸酐 * 2E4MZ-A：咪唑系(1-氰基乙基-2-乙基-4-甲基咪唑)
[ 實驗例 1 ：物性評價 ]
如下測定實施例1中製造的底部填充膜的物性，將測定結果示於上述表1中。 1)起始溫度(Onset Temperature)
利用示差掃描熱分析儀(Differential Scanning Calorimetry，DSC)測定底部填充膜的黏接層的起始溫度。 2)熔體黏度(Melt Viscosity)
利用流變儀(Rheometer)將底部填充膜的黏接層的溫度按照每分鐘10℃從50℃提高至300℃，同時測定黏度。 [ 實驗例 2 ：封裝評價 ]
利用實施例1中製造的底部填充膜根據晶片佈局方式實施半導體封裝後，評價它們被封裝後的貼合截面。
圖7是半導體晶片的凸點與封裝體基板的貼合焊盤預貼合(pre-bonding)以及投入至加壓室烘箱(PCO)後的黏接層的俯視照片。可知PCO之後，黏接層內空隙(void)面積驟減。
此外，圖8是回流(Reflow)工序之後底部填充膜的黏接層被固化後的截面照片。
實驗結果，可以確認到本發明的底部填充膜不僅在固化之後，即使是在預貼合的狀態，半導體晶片的凸點與封裝體基板的貼合焊盤也穩定地形成了貼合(參照以下圖8)。
10A、10B:底部填充膜 11:基材 12:黏接層 13:第二基材 20:半導體晶片 21:凸點 30:封裝體基板 31:貼合焊盤
圖1是示出本發明的第一實施例的半導體封裝體用底部填充膜的結構的截面圖。 圖2是示出本發明的第二實施例的半導體封裝體用底部填充膜的結構的截面圖。 圖3至圖6是用於概略性說明本發明的半導體封裝體的製造方法的各工序的截面圖。 圖7是利用實施例1的底部填充膜的半導體封裝體的俯視照片。 圖8是利用實施例1的底部填充膜的半導體封裝體的截面照片。
10A:底部填充膜
11:基材
12:黏接層

Claims (15)

  1. 一種半導體封裝體用底部填充膜，其包含： 一基材；以及 配置在所述基材的一面、150至160℃時的熔體黏度為300至1000Pa.s、且示差掃描熱分析儀DSC上起始溫度為145±5℃的一黏接層。
  2. 如請求項1之半導體封裝體用底部填充膜，所述底部填充膜用於一晶片佈局方式，所述晶片佈局方式為：拾取附著有所述黏接層的一半導體晶片而附著於被一貼合台支撐的一封裝體基板上。
  3. 如請求項2之半導體封裝體用底部填充膜，所述黏接層的起始溫度與預設定的所述貼合台的預熱溫度Ts實質相同。
  4. 如請求項2之半導體封裝體用底部填充膜，所述黏接層的厚度為所述半導體晶片與所述封裝體基板間的間隔的80至120%範圍。
  5. 如請求項1之半導體封裝體用底部填充膜，所述黏接層的示差掃描熱分析儀DSC上峰值頂點溫度為165±5℃，所述起始溫度與所述峰值頂點溫度之差為25±5℃。
  6. 如請求項1之半導體封裝體用底部填充膜，所述黏接層為一黏接樹脂組合物的固化物或半固化物，所述黏接樹脂組合物包含： (a)含有液態環氧樹脂、苯氧樹脂和多官能性環氧樹脂的環氧樹脂； (b)酸酐系固化劑； (c)含氮(N)雜環化合物；以及 (d)填料。
  7. 如請求項6之半導體封裝體用底部填充膜，所述多官能性環氧樹脂、所述苯氧樹脂和所述液態環氧樹脂的混合比率為4 : 3~4 : 2~3重量比率。
  8. 如請求項6之半導體封裝體用底部填充膜，以所述環氧樹脂1當量基準，所述酸酐固化劑的含量為0.3至1.0酸酐當量範圍。
  9. 如請求項6之半導體封裝體用底部填充膜，以所述酸酐固化劑1當量基準，所述含氮雜環化合物的含量為0.005當量以上且小於0.02當量。
  10. 一種半導體封裝體的製造方法，其包括： (i)在具備一凸點的一半導體晶片的所述凸點上附著請求項1至9中任一項所述的底部填充膜的所述黏接層的步驟； (ii)拾取附著有所述黏接層的所述半導體晶片的所述凸點而使其在支撐於一貼合台上的一封裝體基板的一貼合焊盤上對準的步驟； (iii)將對準後的所述半導體晶片和所述封裝體基板投入至一加壓室烘箱中的步驟； (iv)使所述半導體晶片的所述凸點熔融而使所述半導體晶片與所述封裝體基板連接的步驟；以及 (v)使配置在連接後的所述半導體晶片與所述封裝體基板之間的所述黏接層固化的步驟。
  11. 如請求項10之半導體封裝體的製造方法，所述步驟(ii)中的拾取以及對準藉由一晶片佈局方式來實施。
  12. 如請求項10之半導體封裝體的製造方法，所述步驟(ii)的所述貼合台被預熱至與所述底部填充膜所具備的所述黏接層的起始溫度實質相同的設定溫度Ts。
  13. 如請求項10之半導體封裝體的製造方法，所述步驟(ii)中的所述凸點與所述貼合焊盤間的對準藉由在130~150℃的貼合台溫度、常溫的貼片機頭、10~200N、1~5秒的條件下進行壓接來實施。
  14. 如請求項10之半導體封裝體的製造方法，所述步驟(iv)中，所述凸點的熔融步驟之後，所述黏接層內空隙面積比為1.0%以下。
  15. 如請求項10之半導體封裝體的製造方法，所述步驟(v)中的所述黏接層的固化溫度為160至250℃範圍。
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